2SK215 Search Results

smd marking g23

Abstract: SOT-23 marking g23
Contextual Info: MOSFET SMD Type Product specification 2SK2158 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 1 consider driving current. 0.55 Because of high input impedance, there is no need to +0.1 1.3-0.1 +0.1 2.4-0.1 Capable of drive gate with 1.5 V 2 +0.1 0.95-0.1

2SK213 2Sk214

Abstract: 2SK216 j78 transistor 2SK214 2SK213 2SK215 2SJ76 2sk216 equivalent C2575
Contextual Info: 2SK213, 2SK214, 2SK215, 2SK216 Silicon N-Channel MOS FET Application TO–220AB High frequency and low frequency power amplifier, high speed switching. Complementary pair with 2SJ76, J77, J78, J79 Features • • • • 3 Suitable for direct mounting High forward transfer admittance

DIODE OA10

Abstract: oa10 diode
Contextual Info: bl E D • M ateos 001301b 3T3 IHIT4 2SK213,2SK214. 2SK215,2SK216 H I T A C H I / O P T O E L E C T R O N I C S SILICON N-CHANNEL MOS FET HIGH FREQUENCY ANO LOW FREQUENCY POWER AMPLIFIER. HIGH SPEED SW ITCHING Ed Complementary Pair with 2SJ76, J77, J 7 8 r

Contextual Info: 2SJ76,2SJ77,2SJ78, 2SJ79 Silicon P-Channel MOS FET HITACHI November 1996 Application High frequency and low frequency power amplifier, high speed power switching Complementary pair with 2SK213, 2SK214, 2SK215, 2SK216 Features • Suitable for direct mounting

2SK245

Abstract: 2SK270 2SK243 2sk205 2SK239A 2SK224 2SK214 2SK259H 2Sk226 2SK240
Contextual Info: Absolutes maximum ratings Ta=25ºC PartNumber V* VGS* IG ID Electrical characteristics (Ta=25ºC) IDSS(mA) gm(mS) Pd/Pch Tj/Tch VDS min max 2SK201 2SK203 2SK205 2SK208 2SK209 2SK210 2SK211 2SK212 2SK213 2SK214 2SK215 2SK216 2SK217 2SK218 2SK219 2SK220H

2SJ76

Abstract: Hitachi 2SJ Hitachi DSA002751 2SK213 2Sk214
Contextual Info: 2SJ76, 2SJ77, 2SJ78, 2SJ79 Silicon P-Channel MOS FET November 1996 Application High frequency and low frequency power amplifier, high speed power switching Complementary pair with 2SK213, 2SK214, 2SK215, 2SK216 Features • • • • Suitable for direct mounting

2SK2150

Abstract: SC-65 idrs
Contextual Info: TOSHIBA Z iU o SEMICONDUCTOR TECHNICAL DATA TOSHIBA FIELD EFFECT TRANSISTOR 2SK2150 SILICON N CHANNEL MOS TYPE n - MOS IV HIGH SPEED. HIGH CURRENT SffITHING APPLICATIONS. CHOPPER REGULATOR. DC-DC CONVERTER AND MOTOR * DRIVE APPLICATIONS. INDUSTRIAL APPLICATIONS

2SK2151

Contextual Info: Ordering number: E N 4 56 8 A 2SK2151 N0.4568A N -Channel MOS Silicon FET Very High-Speed Switching Applications F e a tu r e s • Low ON resistance. • Very high-speed switching. • Low-voltage drive. absolute M axim um R a tin g s a t Ta = 25°C Drain-to-Source Voltage

2SK216-E

Abstract: 2SK215 2SK216 2SK213 2SK214 2SJ76 PRSS0004AC-A 2SK214-E 2SK213-e 2SK216E
Contextual Info: 2SK213, 2SK214, 2SK215, 2SK216 Silicon N Channel MOS FET REJ03G0903-0200 Previous: ADE-208-1241 Rev.2.00 Sep 07, 2005 Application High frequency and low frequency power amplifier, high speed switching. Complementary pair with 2SJ76, J77, J78, J79 Features

REJ03G0122-0200

Abstract: 2SK214 2SJ78 2SJ76 2SJ77 2SJ79 2SK213 2SK215 2SK216 PRSS0004AC-A
Contextual Info: 2SJ76, 2SJ77, 2SJ78, 2SJ79 Silicon P Channel MOS FET REJ03G0122-0200 Previous: ADE-208-1179 Rev.2.00 Sep 07, 2005 Description High frequency and low frequency power amplifier, high speed power switching Complementary pair with 2SK213, 2SK214, 2SK215, 2SK216

2sk2158

Abstract: transistor g23 2SK2158 PACKAGE C10535E MEI-1202
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2158 N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING PACKAGE DIMENSIONS in millimeters driven on a low voltage and it is not necessary to consider 2.8 ± 0.2 1.5 0.4 –0.05 portable systems such as headphone stereo sets and camcorders.

2SK2157

Abstract: C10535E MEI-1202
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2157 N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SK2157 is a N-channel MOS FET of a vertical type and PACKAGE DIMENSIONS in mm is a switching element that can be directly driven by the output of 5.7 ±0.1 2.0 ±0.2

g23 SMD Transistor

Abstract: transistor g23 mosfet transistor g23 smd marking g23 smd transistor marking G23 marking g23 SMD SMD MARKING g23 sot23 SMD Transistor g23 2SK2158 SMD SOT23 g23
Contextual Info: MOSFET SMD Type MOS Field Effect Transistor 2SK2158 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 1 consider driving current. 0.55 Because of high input impedance, there is no need to +0.1 1.3-0.1 +0.1 2.4-0.1 Capable of drive gate with 1.5 V 2

smd marking nw

Abstract: SmD TRANSISTOR nw MOSFET marking smd MOSFET nw "Field Effect Transistor" 2SK2159 NW smd transistor SMD TRANSISTOR mosfet marking pd marking nw vs319
Contextual Info: MOSFET SMD Type MOS Field Effect Transistor 2SK2159 SOT-89 Unit: mm 4.50 1.50 +0.1 -0.1 +0.1 -0.1 Features +0.1 2.50-0.1 Capable of drive gate with 1.5 V Small RDS on RDS(on) = 0.3 MAX. @VGS = 4.0 V, ID = 1.0 A 1 2 3 +0.1 0.53-0.1 +0.1 0.48-0.1 +0.1 0.44-0.1

2SK2151

Abstract: 41694
Contextual Info: Ordering number:ENN4568A N-Channel Silicon MOSFET 2SK2151 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. unit:mm 2062A [2SK2151] 4.5 1.6 0.4 1.0 2.5 4.25max 1.5 0.5

2SK2152

Contextual Info: Ordering number:ENN4569A N-Channel Silicon MOSFET 2SK2152 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. unit:mm 2062A [2SK2152] 4.5 1.6 0.4 1.0 2.5 4.25max 1.5 0.5

2SJ76

Abstract: 2SJ79 2SJ77 2SJ78 2SK213 2SK214 2SK215 2SK216 Hitachi Scans-001 PC-H-130
Contextual Info: 2SJ76, 2SJ77, 2SJ78, 2SJ79 Silicon P-Channel MOS FET HITACHI November 1996 Application High frequency and low frequency power amplifier, high speed power switching Complementary pair with 2SK213, 2SK214, 2SK215, 2SK216 Features • Suitable for direct mounting

2SK2154

Contextual Info: Ordering number:ENN4689 N-Channel Silicon MOSFET 2SK2154 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. unit:mm 2083B [2SK2154] 2.3 1.5 6.5 5.0 0.5 7.0 5.5 4 1.2

hitachi j79

Abstract: 2SK216 2SK215 j78 transistor 2SJ76 2SK213 2SK214 Hitachi 2SJ Hitachi DSA00397
Contextual Info: 2SK213, 2SK214, 2SK215, 2SK216 Silicon N-Channel MOS FET Application High frequency and low frequency power amplifier, high speed switching. Complementary pair with 2SJ76, J77, J78, J79 Features • • • • Suitable for direct mounting High forward transfer admittance

2SK2154

Contextual Info: Ordering number: EN 4 6 8 9 2SK2154 N o.4689 N-Channel MOS Silicon FET SANYO i Very High-Speed Switching Applications F e a tu r e s • Low ON resistance. • Very high-speed switching. •Low-voltage drive. b s o lu te M ax im u m R a tin g s a tT a = 25°C

transistor g23

Abstract: 2SK2158A transistor g23 mosfet 2SK2158A-T1B-AT 2SK2158A-T2B-AT d178* mosfet
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2158A N-CHANNEL MOSFET FOR HIGH-SPEED SWITCHING The 2SK2158A is an N-channel vertical type MOSFET featuring an operating voltage as low as 1.5 V. Because it can be driven on a low voltage and it is not necessary to consider driving current, the 2SK2158A is suitable for use in lowvoltage portable systems such as headphone stereo sets and camcorders.

2SK213 2Sk214

Abstract: j78 transistor 2SK214 2sk216 equivalent tower mounting amplifier 2SK213 2SK215 2SK216 2SJ76 Hitachi 2SJ
Contextual Info: 2SK213, 2SK214, 2SK215, 2SK216 Silicon N-Channel MOS FET November 1996 Application High frequency and low frequency power amplifier, high speed switching. Complementary pair with 2SJ76, J77, J78, J79 Features • • • • Suitable for direct mounting High forward transfer admittance

M4558

Abstract: 2SK2154
Contextual Info: Ordering number:ENN4689 N-Channel Silicon MOSFET 2SK2154 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. unit:mm 2083B [2SK2154] 2.3 1.5 6.5 5.0 0.5 7.0 5.5 4 1.2

2SK2159

Abstract: C10535E MEI-1202 marking nw
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2159 N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SK2159 is an N-channel vertical type MOS FET featur- PACKAGE DIMENSIONS in millimeters ing an operating voltage as low as 1.5 V. Because it can be driven on a low voltage and it is not necessary to consider