2SK203 Search Results

2SK2038

Abstract: Transistor TOSHIBA 2SK
Contextual Info: TOSHIBA 2SK2038 Field Effect Transistor U n it in m m Silicon N Channel MOS Type rc-MOS 11.5 High Speed, High Current Switching Applications Features • Low Drain-Source ON Resistance • R ds (ON) = 1 (Typ-) • High Forward Transfer Adm ittance - Yfs' = 3.OS (Typ.)

2SK2030

Contextual Info: T O S H IB A 2SK2030 Field Effect Transistor Unit in mm Silicon N Channel M OS Type ti-MOS IV High Speed, High Current Switching Applications Features • Low Drain-Source ON Resistance " r d s (ON) = 0.1 OQ (Typ.) • High Forward Transfer Adm ittance - Yfs = 3 .OS (Typ.)

MOSFET marking smd

Abstract: marking kp SMD TRANSISTOR MARKING 93 MOSFET smd marking mosfet vth 5v vth mos 2SK2033
Contextual Info: IC MOSFET SMD Type MOS Field Effect Transistor 2SK2033 SOT-23 Features Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 High input impedance. 0.4 3 1 0.55 Enhancement-Mode +0.1 1.3-0.1 +0.1 2.4-0.1 Low gate threshold voltage :Vth=0.5 to 1.5V 2 +0.1 0.95-0.1 +0.1 1.9-0.1

Contextual Info: SILICON N CHANNEL MOS TYPE 2SK2035 U n it in mm HIGH SPEED SWITCHING APPLICATIONS. ANALOG SWITCHING APPLICATIONS. • • • High Input Impedance. Low Gate Threshold Voltage : Vt,h = 0.5~1.5V Excellent Sw itching Tim es : ton = 0.16/^s typ. toff^ 0-15;“ 3 (typ-)

2SK2037

Contextual Info: 2SK2037 TOSHIBA Field Effect Transistor Silicon N Channel Type 2SK2037 High Speed Switching Applications Analog Switching Applications • High input impedance. • Low gate threshold voltage: Vth = 0.5~1.5 V • Excellent switching times: ton = 0.28 µs typ.

Contextual Info: TO SHIBA 2SK2037 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL TYPE 2SK2037 Unit in mm HIGH SPEED SWITCHING APPLICATIONS. ANALOG SWITCHING APPLICATIONS. • • • High Input Impedance. Low Gate Threshold Voltage Excellent Switching Times . 1.2 5 ± 0 .1

2SK245

Abstract: 2SK270 2SK243 2sk205 2SK239A 2SK224 2SK214 2SK259H 2Sk226 2SK240
Contextual Info: Absolutes maximum ratings Ta=25ºC PartNumber V* VGS* IG ID Electrical characteristics (Ta=25ºC) IDSS(mA) gm(mS) Pd/Pch Tj/Tch VDS min max 2SK201 2SK203 2SK205 2SK208 2SK209 2SK210 2SK211 2SK212 2SK213 2SK214 2SK215 2SK216 2SK217 2SK218 2SK219 2SK220H

2SJ83

Abstract: 2SK238 2SJ82 2SK241 2SK240 2SK203 2SK220 2S119 2SK197 2SK198
Contextual Info: - 38 - * . 1 fr K ft f M € tí: € 2SK197 B ÍL B ÍL 2SK198 tñ“ F 2 SK196 H 2SK199 2SK201 NEC 2SK203 NEC 2SK208 m m m £ 4 -k % Vg s * X V* m (V) * (V) 800m 2m 120 0.2 -2 10 10m G 150m -lOn -0.5 2m 14m 10 -0.3 -4 10 LF A J N D -30 GDO 10m G 150m

Contextual Info: Panasonic Power F-MOS FETs 2SK2032 Silicon N-Channel Power F-MOS Unit : mm • Features • • • • Avalanche energy capability guaranteed : EAS > 200mJ Vgss=±30V guaranteed High-speed switching : t|= 90ns No secondary breakdown 5.0+0.2 3.2 ■ Applications

2SK2035

Contextual Info: TO SH IBA 2SK2035 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK2035 Unit in mm HIGH SPEED SWITCHING APPLICATIONS. ANALOG SWITCHING APPLICATIONS. . ± 0.2 16 • • • U.6IU.1 High Input Impedance. Low Gate Threshold Voltage : Vth = 0.5~1.5V

transistor marking 9D

Abstract: 2SK2033 transistor kp
Contextual Info: TOSHIBA 2SK2033 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK2033 HIGH SPEED SWITCHING APPLICATIONS. ANALOG SWITCH APPLICATIONS. • High Input Impedance. • Low Gate Threshold Voltage Vth = 0.5~1.5V • Excellent Switching Times ton = 0 .1 6 ^ typ.

Contextual Info: 2SK2034 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2034 High Speed Switching Applications Analog Switch Applications • High input impedance. • Low gate threshold voltage.: Vth = 0.5~1.5 V • Excellent switching times: ton = 0.16 s typ.

Contextual Info: 2SK2035 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2035 High Speed Switching Applications Analog Switching Applications • High input impedance. • Low gate threshold voltage: Vth = 0.5~1.5 V • Excellent switching times: ton = 0.16 s typ.

2SK2032

Contextual Info: Power F-MOS FETs 2SK2032 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 200mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 90ns ● No secondary breakdown unit: mm ● Contactless relay ● Diving circuit for a solenoid

2SK2035

Abstract: high speed switching transistor
Contextual Info: TO SHIBA 2SK2035 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK2035 HIGH SPEED SWITCHING APPLICATIONS. ANALOG SWITCHING APPLICATIONS. • High Input Impedance. • Low Gate Threshold Voltage : Vth = 0 .5 ~ 1 .5 V • Excellent Switching Times

2SK2033

Contextual Info: 2SK2033 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2033 High Speed Switching Applications Analog Switch Applications • High input impedance. • Low gate threshold voltage: Vth = 0.5~1.5 V • Excellent switching times: ton = 0.16 s typ.

2SK2035

Contextual Info: 2SK2035 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2035 High Speed Switching Applications Analog Switching Applications • High input impedance. • Low gate threshold voltage: Vth = 0.5~1.5 V • Excellent switching times: ton = 0.16 s typ.

2SK2034

Contextual Info: 2SK2034 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2034 High Speed Switching Applications Analog Switch Applications • High input impedance. • Low gate threshold voltage.: Vth = 0.5~1.5 V • Excellent switching times: ton = 0.16 s typ.

2sk2036

Contextual Info: 2SK2036 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2036 High Speed Switching Applications Analog Switching Applications • High input impedance. • Low gate threshold voltage: Vth = 0.5~1.5 V • Excellent switching times: ton = 0.28 s typ.

ida sc-59

Abstract: 2SK2033
Contextual Info: TOSHIBA 2SK2033 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK2033 HIGH SPEED SWITCHING APPLICATIONS. ANALOG SWITCH APPLICATIONS. • High Input Impedance. • Low Gate Threshold Voltage Vth -0 .5 ~ 1 .5 V • Excellent Switching Times ton = 0 .1 6 ^ typ.

Contextual Info: Power F-MOS FETs 2SK2032 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 200mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 90ns ● No secondary breakdown unit: mm 5.0±0.2 3.2 φ3.2±0.1 2.0±0.2

Contextual Info: Reliability Tests Report Product Name: 2SK2035 Package Name: SSM 1. Thermal tests Test Item Heat resistance Reflow Heat resistance (Iron) Temperature cycling - Test Condition Peak : 260 deg.C(a moment) Reflow zone : 230 deg.C 30 to 50 s Preheat : 180 to 190 deg.C , 60 to 120 s

2SK2034

Contextual Info: 2SK2034 東芝電界効果トランジスタ シリコンNチャネルMOS形 2SK2034 ○ 高速スイッチング用 ○ アナログスイッチ用 単位: mm • 入力インピーダンスが高く, 駆動電流が極めて小さい。 • Vth が低く, 低電圧での CMOS などからの直接駆動が可能。

Contextual Info: T O SH IB A 2SK2035 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK2035 HIGH SPEED SWITCHING APPLICATIONS. Unit in mm ANALOG SWITCHING APPLICATIONS. • • • High Input Impedance. Low Gate Threshold Voltage : Vth = 0.5~1.5V Excellent Switching Times : ton = 0.16,«s typ.