2SK321 Search Results

Contextual Info: 2SK3214 Silicon N Channel MOS FET High Speed Power Switching REJ03G1093-0400 Rev.4.00 May 15, 2006 Features • Low on-resistance RDS = 130 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004AC-A

2SK3218-01

Abstract: 2SK3219-01MR
Contextual Info: 2SK3219-01MR FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET Features TO-220F15 High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators 2.54 UPS Uninterruptible Power Supply DC-DC converters

Hitachi DSA0076

Abstract: 2SK3212
Contextual Info: 2SK3212 Silicon N Channel MOS FET High Speed Power Switching ADE-208-752A Z 2nd. Edition Mar. 2001 Features • Low on-resistance R DS =0.1 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline TO–220FM D G 1 2

D1378

Abstract: 2SK3211 2SK3221
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3221 SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The 2SK3221 is N-channel DMOS FET device that features a PART NUMBER PACKAGE 2SK3211 Isolated TO-220 low gate charge and excellent switching characteristics, and

78 MOS

Abstract: HITACHI DIODE 2SK3214 Hitachi DSA00395
Contextual Info: 2SK3214 Silicon N Channel MOS FET High Speed Power Switching ADE-208-763 Z Target Specification 1st. Edition December 1998 Features • Low on-resistance R DS =130mΩ typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline

2SK3214

Abstract: 2SK3214-E PRSS0004AC-A
Contextual Info: 2SK3214 Silicon N Channel MOS FET High Speed Power Switching REJ03G1093-0300 Previous: ADE-208-763A Rev.3.00 Sep 07, 2005 Features • Low on-resistance RDS = 130 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source

2SK3211

Abstract: 2SK3211L-E 2SK3211STL-E PRSS0004AE-A
Contextual Info: 2SK3211 L , 2SK3211(S) Silicon N Channel MOS FET High Speed Power Switching REJ03G1091-0400 Rev.4.00 May 15, 2006 Features • Low on-resistance RDS = 60 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004AE-A

2SK3219-01MR

Abstract: L420
Contextual Info: 2SK3219-01MR FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET Features TO-220F15 High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators 2.54 UPS Uninterruptible Power Supply DC-DC converters

Hitachi DSA0076

Abstract: 2SK3214
Contextual Info: 2SK3214 Silicon N Channel MOS FET High Speed Power Switching ADE-208-763A Z Target Specification 2nd. Edition Mar. 2001 Features • Low on-resistance R DS = 130mΩ typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline

Contextual Info: 2SK3212 Silicon N Channel MOS FET High Speed Power Switching HITACHI 1st. Edition February 1999 Features • Low on-resistance • • Rds = 0.1 Q. typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline TO -220FM Absolute Maximum Ratings Ta = 25 °C

MA56

Abstract: 2SK321 2SK374 panasonic capacitor FL
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Contextual Info: 2SK3214 Silicon N Channel MOS FET High Speed Power Switching REJ03G1093-0400 Rev.4.00 May 15, 2006 Features • Low on-resistance RDS = 130 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004AC-A

2SK3212

Abstract: Hitachi DSA003756
Contextual Info: 2SK3212 Silicon N Channel MOS FET High Speed Power Switching ADE-208-752 Z 1st. Edition February 1999 Features • Low on-resistance R DS = 0.1 Ω typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline TO–220FM D

hitec 410

Abstract: Hitachi DSA0023 HITACHI DIODE hitachi ic 2SK3215 Hitachi DSA00239
Contextual Info: 2SK3215 Silicon N Channel MOS FET High Speed Power Switching ADE-208-764 Z Target Specification 1st. Edition December 1998 Features • Low on-resistance R DS =350mΩ typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline

2SK3211

Abstract: 2SK3211L-E 2SK3211STL-E PRSS0004AE-A
Contextual Info: 2SK3211 L , 2SK3211(S) Silicon N Channel MOS FET High Speed Power Switching REJ03G1091-0300 (Previous: ADE-208-761A) Rev.3.00 Sep 07, 2005 Features • Low on-resistance RDS = 60 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source

2SK3217-01MR

Contextual Info: 2SK3217-01MR FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET Features TO-220F15 High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators 2.54 UPS Uninterruptible Power Supply DC-DC converters

Hitachi DSA00279

Contextual Info: 2SK3212 Silicon N Channel MOS FET High Speed Power Switching ADE-208-752 Z 1st. Edition February 1999 Features • Low on-resistance R DS = 0.1 Ω typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline TO–220FM D

2sk4005

Abstract: 2SK385 2SK332 2SK339 2SK309 2SK400 2SK336 2SK386 2sk317 2SK354
Contextual Info: Absolutes maximum ratings Ta=25ºC PartNumber V* VGS* IG ID Electrical characteristics (Ta=25ºC) IDSS(mA) gm(mS) Pd/Pch Tj/Tch min 2SK301 2SK302 2SK303 2SK304 2SK308 2SK309 2SK310 2SK311 2SK312 2SK313 2SK314 2SK315 2SK316 2SK317 2SK318 2SK319 2SK320 2SK321

Contextual Info: 2SK3216-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET TO-220AB Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply DC-DC converters

Contextual Info: 2SK3218-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET Features TO-220AB High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply DC-DC converters

Hitachi DSA0076

Abstract: 2SK3210
Contextual Info: 2SK3210 L , 2SK3210(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-760A (Z) Target Specification 2nd. Edition Mar. 2001 Features • Low on-resistance R DS = 40mΩ typ. • High speed switching • 4V gate drive device can be driven from 5V source

Hitachi DSA002749

Contextual Info: 2SK3212 Silicon N Channel MOS FET High Speed Power Switching 1st. Edition February 1999 Features • • • Low on-resistance RDS = 0.1 Ω typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline TO–220FM D G 1 2 1. Gate 2. Drain

2SK3211

Abstract: Hitachi DSA00310
Contextual Info: 2SK3211 L , 2SK3211(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-761A (Z) 2nd. Edition February 1999 Features • Low on-resistance RDS = 60 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source 2SK3211

hitec 410

Abstract: HITACHI DIODE 2SK3215 Hitachi DSA00182
Contextual Info: 2SK3215 Silicon N Channel MOS FET High Speed Power Switching ADE-208-764 Z Target Specification 1st. Edition December 1998 Features • Low on-resistance R DS =350mΩ typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline