2N2907 SO Search Results

st 2n2907 to-18

Abstract: P008B 2N2904 2n2905 ST
Contextual Info: SGS-THOMSON RaDSMULKEin^OMlDei 2N2904/2N2905 2N2906/2N2907 GENERAL PURPOSE AMPLIFIERS AND SWITCHES D E S C R IP T IO N The 2N2904, 2N2905, 2N2906 and 2N2907 are si­ licon planar epitaxial PNP transistors in Jedec TO39 for 2N2904, 2N2905 and in Jedec TO-18 (for

74HC14

Abstract: 2N2907 LTC1199 2N2222 2N2222A
Contextual Info: MISE EN ŒUVRE le LTC1 1 99 numérise la tension proportionnelle à la résistance en abscisse et en ordonnée de l'écran tactile* 5v a R mmm. R7 El» Ra , ' .î Ü 1 0 Û m• il s-« 2N2907 \ 4,7 ki2 1 nF 2N2907 1C5 R7 100 kü C6 1 nF -[ Y+ c i 10 nF 4,7 kü

FN1016

Abstract: 2sC9012 on4409 on4673 ON4843 C9012 S2000A3 bul310xi 2SD5080 MN1016
Contextual Info: ТРАНЗИСТОРЫ БИПОЛЯРНЫЕ ИМПОРТНЫЕ Наименование 2N1112 2N1212 2N1217 2N1711 2N2219A 2N2222 Metal 2N2222A 2N2222Aмет 2N2369 2N2369A 2N2646 2N2905A 2N2905Aпластик 2N2907 2N2907(Metal) 2N3055 2N3055 2N3440 2N3773

st 2n2907 to-18

Abstract: IC 7430 2N2907 philips transistor 2N2222 PHILIPS 2N2222A 0612 2N2907A 2n2907 metal can 2N2222 2N2222A 2N2907
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D125 2N2907; 2N2907A PNP switching transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 May 30 Philips Semiconductors Product specification PNP switching transistors

2N2907 application notes

Abstract: 2N2907 Transistor data sheet transistor 2n2907 2N2907 2n2907 metal can 2N2906 IB115
Contextual Info: Continental Device India Limited An ISO/TS 16949 and ISO 9001 Certified Company PNP SILICON PLANAR SWITCHING TRANSISTORS 2N2906 2N2907 TO-18 Metal Can Package Switching and Linear Application ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Emitter Voltage SYMBOL

2N2906

Abstract: 2N2907
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR SWITCHING TRANSISTORS 2N2906 2N2907 TO-18 Metal Can Package Switching and Linear Application ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Emitter Voltage

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR SWITCHING TRANSISTORS 2N2906 2N2907 TO-18 Metal Can Package Switching and Linear Application ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Emitter Voltage

2n2907

Abstract: 2N2906 2N2906 equivalent data sheet transistor 2n2907 2N2907 application notes 2N2907 SO
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR SWITCHING TRANSISTORS 2N2906 2N2907 TO-18 Metal Can Package Switching and Linear Application ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Emitter Voltage

FN2222A

Abstract: RT2222
Contextual Info: 2N2222 PN 2 2 2 2 2N2222A PN2222A THE 2N2222, 2N2222A, PN2222, PN2222A ARB NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR GENERAL PURPOSE AMPLIFIERS AND MEDIUM SPEED SWITCHING APPLICATIONS. THEY ARE COMPLEMENTARY TO THE FNP TYPE 2N2907, 2N2907A, PN2907, PN2907A RESPECTIVELY.

m 60 n 03 g10

Contextual Info: ZETEX SEMICONDUCTORS IbE D • Tï7057fl DOOtfl? 4 ■ ZETB SEMICONDUCTOR DICE ELECTRICAL CHARACTERISTICS PNP SWITCHING TRANSISTORS 2N2907A 2N2907 BCY70 BCY71 BCY72 2N4403 2N3906 2N2894 ZTX510 VCbo Min V CE0 Min T on Max 31 Pice type Volts Volts ns . ns 60

2N2906

Abstract: 2N2907 TRANSISTOR ledex transistor t3n 2N2907 PNP Transistor to 92 2N2907 transistor 2n2907 2N2907 a TRANSISTOR transistor 2n2906 PNP 2N2907
Contextual Info: LUCAS LEDEX/ fil» D LUCAS 5b 07013 QODGin fi 1.8W PNPGENERAL PURPOSE SMALL SIGNAL TRANSISTORS 2N2906 2N2907 j These transistors are silicon planar epitaxial pnp devices conforming to JEDEC TO-18, BS SO-132A and IEC C7/B11 outlines. They are designed for high speed saturated switching and general purpose

transistor 2n2907

Abstract: 1N916 2N2907 AV2907 2N2907 PNP k5037
Contextual Info: @vic AV2907 Amplifier Transistor 2N2907 PNP Silicon COLLECTOR 3 2 BASE 1 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO –40 Vdc Collector – Base Voltage VCBO –60 Vdc Emitter – Base Voltage VEBO –5.0 Vdc Collector Current — Continuous

2n2907 Motorola

Abstract: motorola transistor 2N2907A 2N2905 MOTOROLA 2N2905A MOTOROLA motorola transistor 2N2907 MOTOROLA 2N2905A 2N2904A MOTOROLA 2n2907a motorola 2N2905 2N2219 application 2N2907
Contextual Info: MOTOROLA 2N2904A* thru 2N2907,A* PNP Silicon Annular Hermetic Transistors Designed for high–speed switching circuits, DC to VHF amplifier applications and complementary circuitry. COLLECTOR 3 • High DC Current Gain Specified — 0.1 to 500 mAdc • High Current–Gain — Bandwidth Product —

2N2901

Abstract: npn 2907a EBC 2N2907 PN2907A FN2907 PH2907 2N2222 2N2907A LB-15N PN2907
Contextual Info: CRO 2N 2 9 0 7 2 N 2 9 07A PN 2 9 0 7 PN 2907A CASE TO-18 THE 2N2907, 2N2907A, PN2907, PN2907A ARE PNP SILICON PLANAR EPITAXIAL TRANSISTORS FOR GENERAL PURPOSE AMPLIFIERS AND MEDIUM SPEED SWITCHING APPLICATIONS. THEY ARE COMPLEMENTARY TO THE NPN TYPE 2N2222,

itt 2907A

Abstract: st 2n 2907a 2N2905 MOTOROLA itt 2907 2N2907A itt 2n2222 2n2907 Motorola st 2n 2905a 2N3485 2N2907 2N2907A
Contextual Info: MOTORCLA SC XSTRS/R F 12E D I b3fc.72S4 G0flb57fci 5 | PNP SILICON AN N U LAR HERMETIC TRAN SISTO RS 2N2904, A thru . . designed for high-speed sw itching circuits, D C to V H F amplifier applica­ tions and com plem entary circuitry. 2N2907, A 2N3485, A, 2N3486, A

RNW transistor

Abstract: 2n3486a 2N3485
Contextual Info: TYPES 2N3485, 2N3485A, 2N3486. 2N3486A P-N-P SILICON TRANSISTORS B U L L E T I N N O . D L -S 6 5 7 8 8 5 , J U L Y 1 965 DESIGNED FOR HIGH-SPEED, MEDIUM-POWER SWITCHING AND GENERAL PURPOSE AMPLIFIER APPLICATIONS • Electrically Identical to 2N2906, 2N2906A, 2N2907, and 2N2907A in

Contextual Info: MCC 2N2907 2N2907A
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components Features • • • High current max.600mA Low voltage (max.60V) Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates

2N2907 application notes

Abstract: 2N2907 a TRANSISTOR
Contextual Info: MCC 2N2907 2N2907A
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components Features • • • High current max.600mA Low voltage (max.60V) Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates

2N2907 application notes

Abstract: 2n2907
Contextual Info: MCC 2N2907 2N2907A
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components Features • • • High current max.600mA Low voltage (max.60V) Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates

2N2907 PNP Transistor to 92

Abstract: 2N2907 2N2907 plastic PH2907A 2n2907a 2N2907A plastic 2N2907 TO-92
Contextual Info: Philips Semiconductors Product specification PNP switching transistors FEATURES PH2907; PH2907A PINNING • High current max. 600 mA PIN • Low voltage (max. 60 V). APPLICATIONS DESCRIPTION 1 emitter 2 base 3 collector • Switching and linear amplification.

74HC14 so8

Abstract: LTC1298 2N2222A 2N2907 LTC1285 LTC1286 LTC1288 Transistor 2N2222A DN116 2N2222A -F02
Contextual Info: advertisement Micropower 12-Bit ADCs Shrink Board Space – Design Note 116 Kevin R. Hoskins Many portable and battery-powered systems require internal analog-to-digital conversion. Some, such as pen-based computers, have ADCs at their very cores digitizing the pen

Contextual Info: ¿ 7 7 SGS-IHO M SON ST7537HS1 HOME AUTOMATION MODEM • HALF DUPLEX ASYNCHRONOUS 2400bps FSK MODEM ■ Tx CARRIER FREQUENCY SYNTHESIZED FROM EXTERNAL CRYSTAL ■ LOW DISTORTION Tx SIGNAL ■ Rx SENSITIVITY BETTER THAN 1mVRMs ■ CARRIER DETECTION ■ WATCH-DOG INPUT

TXD10K40

Abstract: TXD10K60 BT1690 BT808 1N5004 TXD10H60 mp8706 TXC10K40 BSTC1026 BT13G
Contextual Info: N AMER PHILIPS/DISCRETE 86 BSE D • X'Ql-oX bbS3131 QOlbSbH 4 ■ General Information CROSS REFERENCE GUIDE INDUSTRY PART NUMBER PG. NEAREST EQUIV. NO. 0105-50 0204-50 0510-25 12F5 12F5R BLU52 BLU52 BLV97 BYX99-300 BYX99-300R 12F10 12F10R 12F20 12F20R 12F40

atf-41435

Abstract: schematic diagram receiver satellite S2PB schematic diagram receiver data circuit satellite ATF-10235 AN-A002 tvro system in low power transmitter 2N2907 PNP Transistor to 92 2N2907 ATF10236
Contextual Info: Design of a 4 GHz LNA for a TVRO System Application Note AN A002 Introduction With the advent of low cost GaAs FETs, the consumer home entered a new phase in communications: the era of satellite television reception. A typical Television Receive Only TVRO system for this market is shown in