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    2N3019 DIE Search Results

    2N3019 DIE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    ISL70062SEHX/SAMPLE Renesas Electronics Corporation Radiation Hardened 10A NMOS Load Switch, DIE, /Die Waffle Pack Visit Renesas Electronics Corporation
    ISL70061SEHX/SAMPLE Renesas Electronics Corporation Radiation Hardened 10A PMOS Load Switch, DIE, /Die Waffle Pack Visit Renesas Electronics Corporation
    ISL73062SEHX/SAMPLE Renesas Electronics Corporation Radiation Hardened 10A NMOS Load Switch, DIE, /Die Waffle Pack Visit Renesas Electronics Corporation
    ISL73061SEHX/SAMPLE Renesas Electronics Corporation Radiation Hardened 10A PMOS Load Switch, DIE, /Die Waffle Pack Visit Renesas Electronics Corporation
    HS0-26CT31RH-Q Renesas Electronics Corporation Radiation Hardened Quad Differential Line Drivers, DIE, / Visit Renesas Electronics Corporation

    2N3019 DIE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    pnp for 2n3019

    Abstract: 2N3700 DIE 2N3700UB 2N3057 2N3019 2N3700 DIE GEOMETRY 2N3019UB 2N3019 DIE 2C3019 2N3019S
    Text: Data Sheet No. 2C3019 Generic Packaged Parts: Chip Type 2C3019 Geometry 4500 Polarity PNP 2N3019, 2N3057 Chip type 2C3019 by Semicoa Semiconductors provides performance similar to these devices. Part Numbers: Product Summary: APPLICATIONS: Designed for general


    Original     		PDF 2C3019 2N3019, 2N3057 2C3019 2N3019S, 2N3019UB, 2N3057, 2N3057A, pnp for 2n3019 2N3700 DIE 2N3700UB 2N3057 2N3019 2N3700 DIE GEOMETRY 2N3019UB 2N3019 DIE 2N3019S

    2N3019

    Abstract: 2N3019J 2N3019JS 2N3019JV 2N3019JX 2N3019 DIE
    Text: 2N3019 Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N3019J • JANTX level (2N3019JX)


    Original     		PDF 2N3019 MIL-PRF-19500 2N3019J) 2N3019JX) 2N3019JV) 2N3019JS) MIL-STD-750 MIL-PRF-19500/391 2N3019 2N3019J 2N3019JS 2N3019JV 2N3019JX 2N3019 DIE

    2n3019

    Abstract: No abstract text available
    Text: 2N3019 Silicon NPN Transistor Data Sheet Description Applications SEMICOA Corporation offers: • General purpose • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N3019J • JANTX level (2N3019JX)


    Original     		PDF 2N3019 MIL-PRF-19500 2N3019J) 2N3019JX) 2N3019JV) 2N3019JS) 2N3019JSR) MIL-STD-750 MIL-PRF-19500/391 2n3019

    2N3019 DIE

    Abstract: No abstract text available
    Text: 2N3019 Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N3019J • JANTX level (2N3019JX)


    Original     		PDF 2N3019 MIL-PRF-19500 2N3019J) 2N3019JX) 2N3019JV) 2N3019JS) MIL-STD-750 MIL-PRF-19500/391 2N3019 DIE

    2N3700 DIE

    Abstract: PCB land 2n3700ub Dose 2N3700 2N3019 DIE 2N3700 JAN 2N3019 2N3019S 2N3057A 2N3700 2N3700UB
    Text: INCH-POUND The documentation and process conversion measures necessary to comply with this document shall be completed by 11 November 2010. MIL-PRF-19500/391M 20 September 2010 SUPERSEDING MIL-PRF-19500/391L 15 January 2008 PERFORMANCE SPECIFICATION SHEET


    Original     		PDF MIL-PRF-19500/391M MIL-PRF-19500/391L 2N3019, 2N3019S, 2N3057A, 2N3700, 2N3700UB, 2N3700 DIE PCB land 2n3700ub Dose 2N3700 2N3019 DIE 2N3700 JAN 2N3019 2N3019S 2N3057A 2N3700 2N3700UB

    2N3700 DIE

    Abstract: JANKC2N3700 JANHCA2N3700 2N3019 DIE 2N3019 2N3019S 2N3057A 2N3700 2N3700UB JANHC2N3700
    Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 15 October 2002. INCH-POUND MIL-PRF-19500/391G 15 July 2002 SUPERSEDING MIL-PRF-19500/391F 26 March 2001 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, LOW-POWER


    Original     		PDF MIL-PRF-19500/391G MIL-PRF-19500/391F 2N3019, 2N3019S, 2N3057A, 2N3700, 2N3700UB JANHC2N3700 JANKC2N3700 MIL-PRF-19500. 2N3700 DIE JANKC2N3700 JANHCA2N3700 2N3019 DIE 2N3019 2N3019S 2N3057A 2N3700 2N3700UB

    2N3019

    Abstract: 2n3019 equivalent CMPT3019 CP305 CXT3019 CZT3019
    Text: PROCESS CP305 Central Small Signal Transistor TM Semiconductor Corp. NPN - High Current Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 31 x 31 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 5.9 x 11.8 MILS Emitter Bonding Pad Area 6.5 x 13.8 MILS


    Original     		PDF CP305 2N3019 CMPT3019 CXT3019 CZT3019 2N3019 2n3019 equivalent CMPT3019 CP305 CXT3019 CZT3019

    2N3019 DIE

    Abstract: 2N3019 CMPT3019 CP305 CXT3019 CZT3019
    Text: PROCESS CP305 Small Signal Transistor NPN - High Current Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 31 x 31 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 5.9 x 11.8 MILS Emitter Bonding Pad Area 6.5 x 13.8 MILS Top Side Metalization


    Original     		PDF CP305 2N3019 CMPT3019 CXT3019 CZT3019 22-March 2N3019 DIE 2N3019 CMPT3019 CP305 CXT3019 CZT3019

    MIL-S-19500

    Abstract: 2902n TRANSISTOR 2n697 2N3700 DIE MIL-S-19500 FOR POWER LINE TRANSISTOR 2N497 2N497 JAN 2n2222 jan 2N657 2N910 JAN
    Text: Winter 1997-1998 Microsemi's Watertown division received QPL Status on the following transistor part types in August 1997. PART TYPE 2N497 & S 2N498 & S 2N656 & S 2N657 & S 2N696 & S 2N697 & S 2N1131 & L 2N1132 & L 2N718A 2N1613 & L 2N720A 2N1893 & S 2N1711 & S


    Original     		PDF 2N497 2N498 2N656 2N657 2N696 2N697 2N1131 2N1132 2N718A 2N1613 MIL-S-19500 2902n TRANSISTOR 2n697 2N3700 DIE MIL-S-19500 FOR POWER LINE TRANSISTOR 2N497 2N497 JAN 2n2222 jan 2N657 2N910 JAN

    662 marking

    Abstract: 2N3019 LDT3019 LDT3019T 2N3019 DIE 015X transistor 2n3019 transistor
    Text: PRODUCT DATA Micro International, Inc PART NUMBER LDT3019 and LDT3019T Micro-LID NPN Transistor Micro International, Inc. 179-204 Belle Forrest Circle Nashville, TN 37221 Tel: 615-662-1200 Fax 615-662-1226 www.microlid.com sales@microlid.com Micro-LID Transistors


    Original     		PDF LDT3019 LDT3019T LDT3019 LDT3019T 2N3019 662 marking 2N3019 DIE 015X transistor 2n3019 transistor

    MOTOROLA 2N5179

    Abstract: motorola 2N2219 motorola 2N2222A motorola mpq3904 MOTOROLA 2N2905A MJ3001 equivalent motorola 2N4427 motorola 2N2219A 2N3819 MOTOROLA motorola 2N3866
    Text: Central Semiconductor - Cross Reference Competitor Discontinued Part Replacements EOL Part # Manufacturer Name Central Semi Part # A12FR10 International Rectifier CR20-010R A12FR100 International Rectifier CR20-100R A12FR120 International Rectifier CR20-120R


    Original     		PDF A12FR10 CR20-010R A12FR100 CR20-100R A12FR120 CR20-120R A12FR20 CR20-020R A12FR40 CR20-040R MOTOROLA 2N5179 motorola 2N2219 motorola 2N2222A motorola mpq3904 MOTOROLA 2N2905A MJ3001 equivalent motorola 2N4427 motorola 2N2219A 2N3819 MOTOROLA motorola 2N3866

    Device Test

    Abstract: 1N4465 MD28F01020 MD27C64-25 Defense/RAD1419A RH1056A LM119
    Text: The most important thing we build is trust ADVANCED ELECTRONIC SOLUTIONS AVIATION SERVICES COMMUNICATIONS AND CONNECTIVITY MISSION SYSTEMS Overview Cobham RAD Solutions 1/1/15 Commercial in Confidence Presenter: Malcolm Thomson Overview • Cobham At A Glance


    Original     		PDF

    2N3810 LCC

    Abstract: 2N2222A LCC1 ESCC 5202-001 MCA3201/2B ESCC 5204/002 bul54ah mp2835 ESCC 5201-002 silicon carbide JFET 2n918 die
    Text: Space Products Semelab products and processes for space applications SEMELAB | experience and innovation 2 Contents 1. Introduction . 4 2. Programmes Supported . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5


    Original     		PDF FM36235 M/0103/CECC/UK 1360/M VQC-03-003050 VQC-03-003049 U3158 2M8S02 2N3810 LCC 2N2222A LCC1 ESCC 5202-001 MCA3201/2B ESCC 5204/002 bul54ah mp2835 ESCC 5201-002 silicon carbide JFET 2n918 die

    MCA0616/1

    Abstract: T-120-01B Skynet Electronic
    Text: Space Products Semelab products and processes for space applications Contents 1. Introduction 4 2. Programmes Supported 5 3. Innovations 6 3.1 Improving the Space Weather Forecast with the LCC1- 4 6 3.2 SoLaRfets – Radiation Tolerant MosFETS 7 3.3 Si3N4 via technology


    Original     		PDF MIL-PRF-19500 QR216, QR217 FM36235 M/0103/CECC/UK 1360/M VQC-03-003050 VQC-03-003049 U3158 2M8S02 MCA0616/1 T-120-01B Skynet Electronic

    BC237

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Chopper P–Channel — Depletion 2 SOURCE MMBFJ177LT1 3 GATE 1 DRAIN 3 1 MAXIMUM RATINGS Rating Drain–Gate Voltage Reverse Gate–Source Voltage Symbol Value Unit VDG 25 Vdc VGS r – 25 Vdc 2 CASE 318 – 08, STYLE 10


    Original     		PDF MMBFJ177LT1 236AB) MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 BC237

    BC237

    Abstract: MPSA06 346
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MMBD1000LT1 MMBD2000T1 MMBD3000T1 MMSD1000T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste


    Original     		PDF MMBD1000LT1 MMBD2000T1 MMBD3000T1 MMSD1000T1 MMBD1000LT1 OT-23 O-236AB) V218A MSC1621T1 MSC2404 BC237 MPSA06 346

    BC237

    Abstract: MARKING CODE diode sod123 W1 K 2056 transistor
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MGSF3455XT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors  Part of the GreenLine Portfolio of devices with energy– conserving traits.


    Original     		PDF MGSF3455XT1 T218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC237 MARKING CODE diode sod123 W1 K 2056 transistor

    2N16

    Abstract: BC237 BCY72
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MGSF1P02ELT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy– conserving traits.


    Original     		PDF MGSF1P02ELT1 L218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 2N16 BC237 BCY72

    2N2195

    Abstract: 2N1990 2N1893 motorola 2N3700 DIE motorola 2N2270 2N736 2n2102 motorola 2N2297 motorola 2N3019 2N699
    Text: 34 MOTOROLA SC -CDI0DES/0PT03- 6367255 MOTOROLA SC DE |t,3b72SS 0037=173 S | D IO D E S /O P T O 34C * SILICO N SM ALL-SIG NAL T R A N SISTO R DICE (continued) 37973 r-z-7-^ 2C21 02 DIE NO. — NPN LINE SOURCE — DSL7 D ¿St This die provides performance similar to that of the following device types:


    OCR Scan     		PDF -CDI0DES/0PT03- 3b72SS 2N656 2N699 2N718 2N720 2N735 2N736 2N739 2N740 2N2195 2N1990 2N1893 motorola 2N3700 DIE motorola 2N2270 2n2102 motorola 2N2297 motorola 2N3019

    Untitled

    Abstract: No abstract text available
    Text: D a ta S h e e t No. 2 C 3 0 1 9 SEMICONDUCTORS G e n e ric P a c k a g e d P a rts : Chip Type 2C3019 Geometry 4500 Polarity PNP 2 N 3 0 1 9, 2 N 3 0 5 7 Chip type 2C3019 by Semicoa Semi­ conductors provides performance similar to these devices. Product Summary:


    OCR Scan     		PDF 2C3019 2C3019 2N3019, 2N3019S, 2N3019UB, 2N3057, 2N3057A, 2N3700, 2N3700UB, SD3019F,

    Untitled

    Abstract: No abstract text available
    Text: ' T •typeNo. Package vCEO ■c cont hF E @ V c e /Ic *T Pd HI-REL HI-REL HI-REL SCREEN SCREEN NPNP PNP NPN NPN NPN T039 T018 T018 T039 T039 12 20 80 80 0.2 0.2 1 1 30-120 30-120 80min 30min 0.5/30m 0.4/30m 5/lra 5/lm 400M 350M 100M 80M 0.36 0.36 0.8 0.8


    OCR Scan     		PDF 2N3008 2N3012 2N3014 2N3019 2N3020 80min 30min 5/30m 4/30m 2N3036

    Untitled

    Abstract: No abstract text available
    Text: se m e la b : MfiE D • 0133107 DDG0434 E5b M S N LB SEMELAB LTD TM.VQ/ BI-POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY HI-REL Type Number 2N2604 2N2605 2N2639 2N2640 2N2641 2N2642 2N2643 2N2644 2N2815 2N2816 2N2817 2N2818 2N2819 2N2820 2N2821 2N2822


    OCR Scan     		PDF DDG0434 2N2604 2N2605 2N2639 2N2640 2N2641 2N2642 2N2643 2N2644 2N2815

    MMBF112L

    Abstract: MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211
    Text: motorcla sc xstrs / r ia e i o I bH t,?as4 3 o o ö s t ii Small-Signal Bipolar Transistors Plastic-Encapsulated M o to ro la 's s m a ll-s ig n a l T O -2 26 p la s tic tra n s is to rs e n c o m p a s s h u n d re d s o f d e v ic e s w ith a w id e v a rie ty


    OCR Scan     		PDF 06050L MMBD914L BAS16L BAL99L MBAV70L MBAV99L MBAV74 BD2835XL MBD2836XL MMBD2837XL MMBF112L MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211

    BSX19 equivalent

    Abstract: BC350 bc107 BFW63 bcw17 SHORT DATA ON 2N744 transistor BC287 2N3020 BC451 2N2868
    Text: TABLE OF CONTENTS INTRODUCTION ALPHANUMERICAL INDEX PRODUCT GUIDE SELECTION GUIDE CROSS REFERENCE HANDLING PRECAUTION QUALITY SURFACE MOUNTING CASE: SOT-23 DATASHEETS PACKAGES Page 4 5 7 9 14 24 25 30 35 419 INTRODUCTION This databook contains datasheets covering the range of discrete devices for small


    OCR Scan     		PDF OT-23 BSX19 equivalent BC350 bc107 BFW63 bcw17 SHORT DATA ON 2N744 transistor BC287 2N3020 BC451 2N2868