2N372 Search Results

2N3025

Abstract: 2N3026 2N3021 2N3022 2N3023 2N3024
Contextual Info: SOLID STATE DEVICES, INC PNP POWER & HIGH VOLTAGE Device Type 2N2983 2N2984 2N2985 2N2986 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3250 2N3250A 2N3251 2N3251A 2N3467 2N3468 2N3485 2N3485A 2N3486 2N3486A 2N3634 2N3635 2N3636 2N3637 2N3660 2N3661 2N3719 2N3720

AN-31

Abstract: Op Amp Circuit Collection Reference Vishay Ultronix Grand Junction CO Q81 Q81, 1K, 3500 ppm "multiple aperture Window Discriminator" noise detector using instrumentation amplifier CO Q81 zero crossing detector in rectifier circuit Vishay Q81
Contextual Info: National Semiconductor Application Note 31 September 2002 Note: National Semiconductor recommends replacing 2N2920 and 2N3728 matched pairs with LM394 in all application circuits. Section 1—Basic Circuits Inverting Amplifier Non-Inverting Amplifier Op Amp Circuit Collection

BC546BP

Abstract: TBC546B 2SC708 bc190 bc190b 2SC2378 SE6020 2SC980AGTM 2SC708 C BC190A
Contextual Info: RF LOW-POWER SILICON NPN Item Number Part Number V BR CEO 2N3722 SE8012 JE9100A JE9100B JE9100C BCV71 BCV71 A BCV71 A BCV71 A 2SC3504D 5 10 15 20 25 30 35 40 45 50 60 70 85 90 (Hz) Ie Max (A) 500m 500m 100m 100m 100m 100m 0.2 0.2 0.2 50m J~9100[J N~(;~lecslnc

transistor 2N4015

Abstract: 2N3806
Contextual Info: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL DUAL PNP TRANSISTOR TO-78 VcEO sus VOLTS Ic (max) AMPS 2N3726 45 0.1 2N3727 45 2N3806 PACKAGE DEVICE TYPE Jb TO-78 @ I<yV cE min/max @ mA/V h fE ^CE(sat) @ Ic/I b V @ raA/mA C<F p (MHz) 115@50/5 0.25@50/2.5 8 200 0.1

Contextual Info: 2N372/33 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V) V(BR)CBO (V)24 I(C) Max. (A)10m Absolute Max. Power Diss. (W)80m Maximum Operating Temp (øC)100õ I(CBO) Max. (A)10uØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain. h(FE) Max. Current gain.

2n3721

Contextual Info: TELEPHONE: 973 379-2922 (212)227-6005 FAX: (973) 3794960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.SA Silicon Transistor 2N3721 2N3721 is a NPN silicon transistor intended for general purpose applications. The planar passivated construction assures excellent device

Contextual Info: <Se.rn.i- Conductor £Ptoducts., inc. 20 STERN AVE. SPRINGFIELD, NEW JERSE\.'07081 2N3719. 2N3720 2N3867. 2N3868 2N6303 3 AMPERE POWER TRANSISTORS PNP SILICON 40.60,80 VOLTS 6 WATTS TELEPHONE: (201 376-2922 /^ (212)227-6005 ,0fe\: (201) 376-8960 •MAXIMUM RA1riNGS

Contextual Info: na. 20 STERN AVE SPRINGFIELD, NEW JERSEY 07081 U.SA TELEPHONE 973 376-2902 (212) 227-6000 FAX: (973| 376-6060 2N3725A EPITAXIAL PLANAR NPN HIGH-VOLTAGE, HIGH-CURRENT SWITCH ABSOLUTE MAXIMUM RATINGS Collector-base voltage (le = 0) Collector-emitter voltage (Vul;= 0)

2N3724

Abstract: 2N3725 2n3725a transistor 2N3725
Contextual Info: Datasheet Central' 2N3724 2N3725 2N3725A Semiconductor Corp. NPN SILICON TRANSISTOR 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC TO-39 CASE Manufacturers of World Class Discrete Semiconductors DESCRIPTION The CENTRAL SEMICONDUCTOR 2 N 3 7 2 4 , 2 N 3 7 2 5 , 2 N 3 7 2 5 A types are Silicon NPN Planar Epitaxial Transistors

2N3723

Contextual Info: 2N3723 Si NPN LP HF BJT 4.58 Transistors Transistors Bipolar Si NPN. 1 of 1 Home Part Number: 2N3723 Online Store 2N3723 Diodes Si NPN LP HF BJ T Transistors Enter code INTER3 at checkout.* Integrated Circuits

2N3724

Contextual Info: 2N3724 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Dio. 1 of 2 HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW ITEMS |RFQ| Home 2N3724 Availability Online Store

2N3720

Contextual Info: 2N3720 MECHANICAL DATA Dimensions in mm inches 8.51 (0.34) 9.40 (0.37) PNP SILICON TRANSISTOR 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. 0.89 max. (0.035) FEATURES 0.41 (0.016) 0.53 (0.021) dia. 5.08 (0.200) typ. 2.54 (0.100)

2N3720

Contextual Info: 2N3720 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 60V 0.41 (0.016) 0.53 (0.021)

2N3725

Abstract: transistor 2N3725
Contextual Info: 2N3725 HIGH VOLTAGE, HIGH CURRENT SWITCH DESCRIPTION The 2N3725 is a silicon planar epitaxial transistor in TO-39 metal case It is a high-voltage, high current switch used for memory applications requiring breakdown voltages up to 50 V and operating currents to 1 A. Fast switching times are assured because of the high minimum fT 300 MHz and tight

2N3728

Contextual Info: na. TELEPHONE: 379 212 227-0008 FAX; (973) 378-0980 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.3A 2N3728 NPN HIGH PERFORMANCE DIFFERENTIAL AMPLIFIERS llfU . . . 0.0-1.0 PROM 100 MA to 1.0 mA 9 20'C, 0.8-1.0 FROM 100 jjA to 1.0 mA, -65* C to +125°C = • • • 3-° mV (MAX >

2N3725

Abstract: TRANSISTOR 2SC 635
Contextual Info: 0/V E F ^ IP 2N3725 NEW ENGLAND SEMICONDUCTOR NPN SWITCHING TRANSISTORS • • • • FAST SWITCHING HIGH VOLTAGE HIGH CURRENT GAIN LOW SATURATION VOLTAGE M A X IM U M R A TIN G S R A TIN G S Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage

NPN transistor 2n4400 beta value

Abstract: TP4058 NPN transistor 2n 3904 TP4059 transistor EBC 3904 TP4060 2N2712 to-92hs TP3644 2N2711 2N2924
Contextual Info: Econoline S P R AGUE GENERAL-PURPOSE SMALL-SIGNAL AMPLIFIERS PO LA RIT Y D-C C U R R E N T G AIN hFE Conditions Limits 2N2711 2N2712 2N2923 2N2924 2N2925 2N2926« 2N3392 2N3393 2N3394 2N3395Y 2N3396Y 2N3397? 2 N3398T 2N3721 2N5172 NPN NPN NPN NPN NPN NPN

2N3720

Abstract: transistor pnp VCEO 12V Ic 1A
Contextual Info: 2N3720 MECHANICAL DATA Dimensions in mm inches 8.51 (0.34) 9.40 (0.37) PNP SILICON TRANSISTOR 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. 0.89 max. (0.035) FEATURES 0.41 (0.016) 0.53 (0.021) dia. 5.08 (0.200) typ. 2.54 (0.100)

Contextual Info: 2N3721 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)18 V(BR)CBO (V)18 I(C) Max. (A)100m Absolute Max. Power Diss. (W)200m Maximum Operating Temp (øC)125þ I(CBO) Max. (A)500n @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: 2N3729 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)30 V(BR)CBO (V)60 I(C) Max. (A) Absolute Max. Power Diss. (W)450m Maximum Operating Temp (øC)175õ I(CBO) Max. (A).01uØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

2N3729

Abstract: 2N4072 2N2947 2n4073
Contextual Info: 8134693 SEMICQA_ qp PE | 5 1 3 * ^ 3 ~f _ □□□□13b b | DIFFERENTIAL AND DUAL AMPLIFIERS Cont’d Type NPN 2N3729 2N2453 2N2480 2M2480A 2N2639 2N2640 2N2641 2N2642 2N2643 2N2913 2N2914 2N2915 2N2916 2N2917 2N2918 2N2453A 2N2919 2N2920 2N2652

2N3724A

Contextual Info: 2N3724A Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 30V 0.41 (0.016)

2N4250

Abstract: 2N5133 2N4249 2N4288 2N4291 to 106 2n5133 2N4248 2N3901 2N3707 2N3708
Contextual Info: TYPE NO. 2N3721 2N3798 2N3799 2N3843 2N3843A 2N3844 N N N N N N P P N N CASE MAXIM UM RATINGS Pd ImW 'c V CEO mA) (V ) TO-92B TO-92B TO-92B TO-92B TO-92B 360 360 360 360 360 200 200 200 200 200 30 30 30 30 30 TO-92B TO-18 TO-18 TO-92B TO-92B 200 360 360

TIS133

Abstract: TIS113 NPN/acsl 086 s
Contextual Info: TYPES TIS133 THRU TIS136 N-P-N SILICON TRANSISTORS B U L L E T IN N O . D L-S 7 3 1 1 8 9 7 , F E B R U A R Y 1973 S IL E C T t TRAN SISTO RS* FA ST, H IGH -VOLTAGE, HIGH-CURRENT C O R E D R IV ER S Replacements for TIS113 thru TIS116 • TIS133 Electrically Similar to 2N3724