2N434 Search Results

b1375

Abstract: 2sk270a 2SK150A MG15G1AL2 2SA1051b MG50G2CL1 mg100g1al2 2SA1015 A1265N MG100G1AL1
Contextual Info: •D IS C O N TIN U E D TYPE LIST Type No. 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S 2N4391 2N4392 2N4393 2 N 4398 2N4399 2N5038 2N5039 2N5301 2N5302 2N5303 2N6249 2N6250 2N6251 2N6546 2N6547 2SA27 2SA28 2SA29 2SA37 2SA38 2SA39

Contextual Info: NPA N-Channel JFETs C X 'S ilico n ix in c o rp o r a te d TYPE PACKAGE Single TO-92 TO-226AA • J201, J202 Single SOT-23 • SST201, SST202 Single TO-18 • 2N4338, 2N4339, 2N4340, 2N4341, VCR4N Single Chip • Available as NPA1CHP, NPA2CHR NPA3CHP, NPA4CHP

fet junction n-channel transistor

Abstract: small signal audio FET 2N4340 N-Channel JFET transistor J-FET philips jfet transistor 2N4340
Contextual Info: 711002b DDbôO?! ÔT7 • P H IN Philips Semiconductors D ata sh e e t s ta tu s Prelim inary specification d a te of is s u e O ctob e r 1990 FEATURES • Low noise, noise figure < 1 dB • High o ff isolation. 2N4340 N-channel J-FET PINNING - TO-18 PIN 1

2N5458 NATIONAL SEMICONDUCTOR

Abstract: to236 2n4338 MMBFJ201 MMBFJ202 2N5458 BF244A BF245C JFET 2N3684 2N3686 2N4338
Contextual Info: JFET General Purpose continued 7 baE T> m b 5 0 1 1 3 0 003T H T fl bTO « N S C S . NATL SEMICON]) ( DISCRETE ) N Channel V p @ V DSlD Device 3 2N3684 2N3686 2N3822 PN4303 2N4338 2N4339 2N4340 2N5457 MMBF5457 2N5458 MMBF5458 2N5459 MMBF5459 BF244Ä BF245A

TO111

Abstract: TO61 U 114
Contextual Info: G27 ELECTRONICS, INC. \ -15 COLLECTOR CURRENT = 10 AM PS NPN TYPES— ConWnued C ue VCBO Volt 2N3920 2N4070 2N4071 2M 150 JAN 2N4150 JT X • ÎN4150 2N4301 2N4347 2N4348 2N5006 T O -3 T O -3 T O -3 T O -5 T O -5 120 120 200 100 100 60 100 150 80 80 6 8

2N3442

Abstract: 2N4347 transistor 2n3442 2n3442 datasheet ic20
Contextual Info: 2N3442 2N4347 HIGH POWER INDUSTRIAL TRANSISTORS NPN silicon transistors designed for applications in industrial and commercial equipment including high fidelity audio amplifiers, series and shunts regulators and power switches. • Low Collector-Emitter Saturation Voltage –

Contextual Info: Philips Components D ata sheet s tatu s Preliminary specification d a te o f Issue October 1990 FEATURES 2N4340 N-channel J-FET PINNING - TO-18 • Low noise, noise figure < 1 dB • High off isolation. PIN 1 2 3 PIN CONFIGURATION DESCRIPTION source drain

2N434B

Abstract: 2N6259
Contextual Info: i, Line. <z3E,ml-L.onauctoi TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2N3773, 2N4348, 2N6259 Hometaxial-Base, High-Current Silicon N-P-N Transistors Features: • High dissipation capability 120 W 2N4348), 150 W (2N3773), 250 W (2N6269)

2N4338

Abstract: 2N4341 2N4339 2N4340 AN102 AN106
Contextual Info: 2N4338/4339/4340/4341 Vishay Siliconix N-Channel JFETs PRODUCT SUMMARY Part Number VGS off (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Max (mA) 2N4338 −0.3 to −1 −50 0.6 0.6 2N4339 −0.6 to −1.8 −50 0.8 1.5 2N4340 −1 to −3 −50 1.3 3.6 2N4341 −2 to −6

transistor 2N4340

Abstract: 2N4340 philips jfet
Contextual Info: Philips Com ponents D a ta s h e e t s ta tu s Pre lim inary sp e cific a tio n d a te o f Iss u e O c to b e r 1990 2N4340 N-channel J-FET PINNING - TO-18 FEATURES • Low noise, n o ise figure < 1 d B • High off isolation. PIN 1 2 3 PIN CONFIGURATION DESCRIPTION

2N4338-41

Abstract: 2N4338 2N4339 2N4340 2N4341 X2N4338-41 jfet "SIT"
Contextual Info: N-Channel JFET Low Noise Amplifier caiooic CORPORATION 2N4338 2N4341 - FEATURES • • • • ABSOLUTE MAXIMUM RATINGS Ta = 25°C unless otherwise noted Exceptionally High Figure of Merit Radiation Immunity Extremely Low Noise and Capacitance High Input Impedance

2N4338

Abstract: 2N4339 2N4340 2N4341 2N4339 Siliconix
Contextual Info: 2N4338/4339/4340/4341 N-Channel JFETs Product Summary Part Number VGS off (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Max (mA) 2N4338 –0.3 to –1 –50 0.6 0.6 2N4339 –0.6 to –1.8 –50 0.8 1.5 2N4340 –1 to –3 –50 1.3 3.6 2N4341 –2 to –6 –50

2N3442

Abstract: 2N4347
Contextual Info: File Num ber 528.1 2N3442, 2N4347 High-Voltage Silicon N-P-N Transistors TERMINAL DESIGNATIONS H ig h-P o w er Devices for Applications in Industrial and Com m ercial Equipment F L A N G E Features: • Lo w saturation voltages ■ H igh dissipation c a p ability — 100 W (2N4347)

2n3920

Abstract: 2n8249
Contextual Info: 0043592 A P I A P I _ 2 6 C ELECTRONICS INC 2b ELECTRONICS INC n— — D eT | O D ^ S 1^ a< 0000230 T | COLLECTOR CURRENT = 10 AMPS NPN TYPES - CONTINUED Device No 2N3920 2N4070 2N4071 2N4150 JAN 2N4150 JTX * 2N4150 2N4301 2N4347 2N4348 2N5006 2N5008

2n4347

Abstract: 2N6262
Contextual Info: 2N4347, 2N6262 2N4347, 6262 NPN POWER TRANSISTORS High Power and High Voltage Applications DIM MIN A B C D E F G H J - K L M - 6,35 0,96 29,90 10,69 5,20 16,64 11,15 - 3,84 MAX 39,37 22,22 8,50 1.09 1,77 30,4 11,18 5,72 17,15 12,25 26,67 4,19 PIN CONFIGURATION

Contextual Info: P-Channel Enhancement Mode MOSFET Amplifier/Switch LLC 2N4352 ABSOLUTE MAXIMUM RATINGS TA = 25oC unless otherwise noted FEATURES • • • • Low ON Resistance Low Capacitance High Gain P-Channel Complement to 2N4341 Drain-Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V

Contextual Info: N-Channel JFET Low Noise Amplifier LLC 2N4338 – 2N4341 ABSOLUTE MAXIMUM RATINGS TA = 25oC unless otherwise noted FEATURES • Exceptionally High Figure of Merit • Radiation Immunity Low Noise and Capacitance • Extremely • High Input Impedance Gate-Source or Gate-Drain Voltage . . . . . . . . . . . . . . . . -50V

2N4352

Abstract: 2N4341 DS005 X2N4352
Contextual Info: P-Channel Enhancement Mode MOSFET Amplifier/Switch LLC 2N4352 ABSOLUTE MAXIMUM RATINGS TA = 25oC unless otherwise noted FEATURES • • • • Low ON Resistance Low Capacitance High Gain P-Channel Complement to 2N4341 Drain-Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V

2N4341

Contextual Info: s n-channel JFETs 2N4338 2N4339 2N4340 designed for Siliconix . Performance Curves NP See Section 5 • Small-Signal Amplifiers B E N E F IT S • Low Noise N F < 1 dB at 1 k H z ■ Choppers • Operation from Low Power Supply Voltages ■ Voltage-Controlled Resistors

2N4338

Abstract: 2N4338-41 2N4339 2N4340 2N4341 X2N4338-41
Contextual Info: N-Channel JFET Low Noise Amplifier LLC 2N4338 – 2N4341 ABSOLUTE MAXIMUM RATINGS TA = 25oC unless otherwise noted FEATURES • Exceptionally High Figure of Merit • Radiation Immunity Low Noise and Capacitance • Extremely • High Input Impedance Gate-Source or Gate-Drain Voltage . . . . . . . . . . . . . . . . -50V

2N4398 MOTOROLA

Abstract: 2N4399 MOTOROLA 2N5745 motorola 300 watts amplifier Bipolar Junction Transistor 2N5301 2N4399 ic amplifier Motorola Bipolar Power Transistor Data npn transistors,pnp transistors
Contextual Info: MOTOROLA Order this document by 2N4398/D SEMICONDUCTOR TECHNICAL DATA 2N4347 See 2N3442 PNP Silicon High-Power Transistors 2N4398 2N4399 2N5745 . . . designed for use in power amplifier and switching circuits. • Low Collector–Emitter Saturation Voltage —

2N4220

Abstract: 2N4338 2N4339 2N4340 2N4341 J201 J202 J203 J204 SST201
Contextual Info: Calogic, LLC 237 Whitney Place Fremont, CA 94539 Tel: 510-656-2900 Fax: 510-651-1076 P/ N 2N4220 2N4338 2N4339 2N4340 2N4341 J201 J202 J203 J204 SST201 SST202 SST203 SST204 JFET Am plifie r Applica t ion s Low N oise eN ldss lgss gfs ( n V / r oot H z Pa ck a ge

2N6259

Abstract: 2n3773 2N3773A 2N4348 2N 6259 2n3773m
Contextual Info: Power Transistors File Number 526 2N3773, 2N4348, 2N6259 HARRIS SEMICOND SECTOR 27E D High-Voltage, High-Current Power Transistors Broadly Applicable Devices for Industrial and Commercial Use 43Ü5571 ÜGnaSM 3 « H A S T-33-I5 TERMINAL DESIGNATIONS T " I- 3

2N4340 equivalent

Abstract: hz 9102 Siliconix N-Channel JFETs Siliconix AN102 sst201 2N4338 2N4339 2N4340 2N4341 AN102
Contextual Info: 2N4338/4339/4340/4341 N-Channel JFETs Product Summary Part Number VGS off (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Max (mA) 2N4338 –0.3 to –1 –50 0.6 0.6 2N4339 –0.6 to –1.8 –50 0.8 1.5 2N4340 –1 to –3 –50 1.3 3.6 2N4341 –2 to –6 –50