2N554 Search Results

2n5549

Contextual Info: TYPE 2N5549 N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTOR B U L L E T I N N O . D L -S 7 0 1 1 1 2 4 , J U N E 1 9 7 0 FOR LOW-LEVEL CHOPPERS, LOGIC SWITCHES, MULTIPLEXERS, AND RF AND VHF AMPLIFIERS • High lyfsl/Ciss Ratio High-Frequency Figure-of-Merit

2N5546

Contextual Info: T Y P E S 2N5545, 2N5546, 2N5547 D U A L N C H A N N E L SILICON J U N C T IO N F IE L D -E F F E C T TR A N S IS TO R S B U L L E T IN NO. DL-S 7311696, M AR CH 1 9 7 2 -R E V IS E D M AR CH 1973 M A T C H E D F IE L D -E F F E C T TR AN SISTO RS • High lyf$l/Ciss Ratio High-Frequency Figure-of-Merit

2N5545

Abstract: Siliconix JFET Duals
Contextual Info: 2N5545/46/47/JANTX/JANTXV Vishay Siliconix Monolithic N-Channel JFET Duals PRODUCT SUMMARY Part Number VgW V gl8 Min mS) lG Max(pA) 2N5545 - 0 . 5 to - 4 . 5 -5 0 1.5 -5 0 5 2N 5546 - 0 . 5 to - 4 . 5 -5 0 1.5 -5 0 10 2N 5547 - 0 . 5 to - 4 . 5 -5 0 1.5

2N5543

Abstract: 2N5544
Contextual Info: HIGH VOLTAGE 2N5543 2N5544 SILICON EPITAXIAL JUNCTION N-CHANNEL FIELD EFFECT TRANSISTORS GEOMETRY 559, PG. 60 FEATURES • HIGH BV[ GO> 300V 2N5543) • LOW CAPACITANCE APPLICATIONS • HIGH VOLTAGE CURRENT SOURCE • HIGH VOLTAGE SWITCH ELECTRICAL DATA ABSOLUTE M AXIM U M RATINGS

2N5545

Abstract: 2N5546 2N5547
Contextual Info: 2N5545/46/47/JANTX/JANTXV Monolithic N-Channel JFET Duals Product Summary Part Number VGS off (V) V(BR)GSS Min (V) gfs Min (mS) IG Max (pA) jVGS1 – VGS2j Max (mV) 2N5545 –0.5 to –4.5 –50 1.5 –50 5 2N5546 –0.5 to –4.5 –50 1.5 –50 10 2N5547

MP2143

Abstract: AD162 2S8474 ad139 2N352 2N353 2N669 2N554 2N2282 2n555
Contextual Info: POWER GERMANIUM PNP Item Number Part Number I C 5 10 >= NKT302A 2S8463 2S8474 PTC194 2N352 2N352 2N353 2N353 2N296 SK3052 ~~~~~A 15 20 2N256 NKT453 2N555 2N157 2N157A CK315 CK415 MN28 ~~f:16 25 30 NKT452 2N554 NKT415 NKT451 2N589 2N2061 2N2062 2N2063 ~~~~64

2N5545

Abstract: 2N5546 dss2 2N5547 Siliconix Dual N-Channel JFETs
Contextual Info: 2N5547 2N5546 2N5545 H m onolithic dual n-channel JFETs designed f o r . . . S ilic o n ix Performance Curves NNP See Section 5 BEN EFITS • High Input Impedance I q < 50 pA • Minimum System Error and Calibra­ tion 5 mV Offset Maximum 2N5545 • G eneral Purpose

2N555

Abstract: Germanium power 2N554 2N176 2N553 2N242 2N257 DRAWING 2N257 2N307 2N250
Contextual Info: germanium power transistors _ T03/ See Pg. 147 for outline d 144 -~-~~-~~- -~ PNP ALLOY TRANSISTORS .42Amp BREAKDOWN VOLTAGES TYPE NUMBER VCB 2N234A 2N235B 2N255A 2N256A 2N257 2N285A 2N285B 2N399 2N401 2N419 2N554 -25 -50 -15 -30 -40

Siliconix JFET Duals

Abstract: 2N5545 2N5546 2N5547
Contextual Info: 2N5545/46/47/JANTX/JANTXV Vishay Siliconix Monolithic N-Channel JFET Duals PRODUCT SUMMARY jVGS1 – VGS2j Max mV Part Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IG Max (pA) 2N5545 –0.5 to –4.5 –50 1.5 –50 5 2N5546 –0.5 to –4.5 –50 1.5

2N5543

Contextual Info: HIGH VO LTAG E 2N5543 2N5544 SILICO N EP IT A X IA L JUNCTION N-CHANNEL FIELD EFFECT TRANSISTORS G E O M E T R Y 559 FEA T U R ES • H IGH B V d g o > 300V 2N5543 • LOW C A P A C IT A N C E A P PLIC AT IO N S • HIGH V O LT A G E C U R R E N T SO U R C E

LS 74151

Abstract: 2N555 MT27 220 hfk 2N176 Germanium Power Devices MT-27 2N2553 2N297A 2N155
Contextual Info: GERMANIUM POWER TRANSISTORS Type Number Case Type Ycbo V Yceo V yc.o CA2D2 2N155 2N176 2N235A 2N236A 2N236B 2N242 2N255 2N256 2N268 2N285A 2N285B 2N297A 2N375 2N392 2N399 2N538 2N538A 2N539 2N539A 2N540 2N540A 2N554 2N555 2N618 2N1359 2N1360 2N1362 2N1363

Contextual Info: Tem ic smconi, 2N5545/5546/5547JANTX/JANTXV Monolithic N-Channel JFET Duals Product Summary F a rt N um ber VcS ofl (V) V(BR)GSS M in (V) gb M in (m S) SVg s i - VGS2| M ax (mV) I g M a x (p A ) 2N5545 -0 .5 to -4 .5 -5 0 1.5 -5 0 5 2N5546 -0 .5 to -4 .5

2N5045

Abstract: 2N5454 DN5566 U444 2N5902 2N5903 2N5196 2N5197 2N5198 2N5199
Contextual Info: sIgnalFET Produci Specifications 7-12 N -Channel Dual JFETs - Gate Min. Max. 2N5196 N 71 0.025 4.0 50 0.7 7.0 1000 — 2N5197 N 71 0.025 4.0 50 0.7 7.0 1000 _ 4.0 50 0.7 7,0 1000 4.0 50 0.7 7.0 1000 2N5198 N 71 2N5199 N 71 0.025 0.025 2N5545 Min. Max. • a

2N5545

Abstract: 2N5546 2N5196 2N5196-9 2N5199CHP 2N5545-47 2N5547 U231-35 U232CHP-35CHP Siliconix Dual N-Channel JFETs
Contextual Info: 2N 5547 2N5546 2N5545 m onolithic dual n-channel JFETs H S ilic o n ix Perform ance Curves N N P See Section 5 designed for . . . BENEFITS • G eneral Purpose D ifferential Am plifiers • High Input Impedance I q < 50 pA • Minimum System Error and Calibra­

Dual N-Channel JFET

Abstract: 2N5545 Siliconix Dual N-Channel JFETs Siliconix JFET Dual Siliconix JFETs Dual Siliconix N-Channel JFETs 2N5546 2N5547 JFET DUALS TO71 package
Contextual Info: 2N5545/46/47/JANTX/JANTXV Monolithic N-Channel JFET Duals Product Summary Part Number VGS off (V) V(BR)GSS Min (V) gfs Min (mS) IG Max (pA) jVGS1 – VGS2j Max (mV) 2N5545 –0.5 to –4.5 –50 1.5 –50 5 2N5546 –0.5 to –4.5 –50 1.5 –50 10 2N5547

2N5545

Abstract: 2N5546 2N5547 2N5545 JANTXV
Contextual Info: 2N5545/46/47/JANTX/JANTXV Vishay Siliconix Monolithic N-Channel JFET Duals PRODUCT SUMMARY jVGS1 – VGS2j Max mV Part Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IG Max (pA) 2N5545 –0.5 to –4.5 –50 1.5 –50 5 2N5546 –0.5 to –4.5 –50 1.5

dual fet U235

Abstract: N JFET 2N4393 2N5045 2N6568 fet cross reference 2N4302 2N4341 2N5902 2N5903
Contextual Info: sIgnalFET Produci Specifications 7-12 N -C h ann el Dual JFETs - Gate Min. Max. 2N5196 N 71 0.025 4.0 50 0.7 7.0 1000 — 2N5197 N 71 0.025 4.0 50 0.7 7.0 1000 _ 4.0 50 0.7 7,0 1000 4.0 50 0.7 7.0 1000 2N5198 N 71 2N5199 N 71 0.025 0.025 2N5545 Min. Max.

2N3507 JANTX

Abstract: 2N5541 2N6235 jedec Package TO-39 2n554 2n523
Contextual Info: lc = 5.0AMPS CONTINUED DEVICE TYPE ««2N4150 2N4240 2N4395 2N4396 2N4897 2N4913 2N4914 2N4915 2N5152 2N5154 2N5237 2N5239 2N5336 2N5337 2N5338 2N5339 2N5487 2N5487 1 2N5488 2N5488 1 2N5541 2N5606 2N5608 2N5610 2N5612 2N5729 2N6233 2N6234 2N6235 *PD @ T C

Contextual Info: Microsemi NPN Transistors Part Number NPN JANTX2N5339 JANTXV2N5339 2N5148 2N5150 2N4863 2N2657 2N4895 2N4896 2N2658 2N4897 2N3619 2N3E20 2N3627 2N3928 2N3623 2N3628 2N5541 2N5327 i 2N3675 : 2N3676 2N5237 2N5237S JAN2N5237 JAN2N5237S JANS2N5237 JANS2N5237S

2N5543

Abstract: 2N5544
Contextual Info: 2flE D TELEDYNE COMPONENTS • ÖWbQa HIGH VOLTAGE OQObSSl 7 2N5S43 2N5544 SILICON EPITAXIAL JUNCTION N-CHANNEL FIELD EFFECT TRANSISTORS G E O M E T R Y 559 FEATURES • HIGH BVDGO> 300V 2N5S43 • LOW CAPACITANCE APPLICATIONS • HIGH VOLTAGE CURRENT SOURCE

2N5547

Abstract: 2n5545 MONOLITHIC DUAL N-CHANNEL JFET is2005 Siliconix JFET Pairs
Contextual Info: T e MIC S e m i c o n d u c t o r s 2N5545/46/47/JANTX/JANTXV Monolithic N-Channel JFET Duals Product Summary V BR GSS M i n (V ) g ts M i n (m S ) Ig M a x (p A ) -0.5 to -4 .5 -5 0 1.5 -5 0 5 -0.5 to -4 .5 -5 0 1.5 -5 0 10 -0.5 to -4 .5 -5 0 1.5 -5 0 15

2N5545

Abstract: 2N5547 D 9969 2N5546 Dual N-Channel JFET
Contextual Info: 2N5545/5546/5547JANTX/JANTXV Siliconix Monolithic NĆChannel JFET Duals Product Summary Part Number VGS off (V) V(BR)GSS Min (V) gfs Min (mS) IG Max (pA) jVGS1 - VGS2j Max (mV) 2N5545 -0.5 to -4.5 -50 1.5 -50 5 2N5546 -0.5 to -4.5 -50 1.5 -50 10 2N5547 -0.5 to -4.5

P-Channel Depletion-Mode

Abstract: MD80C31 JANTX2N4858 5962-9089101MEA SI9110AK JANTX2N6661 4Kx8 sram ttl MGM TRANSFORMER JANTX2N5114 janTXV2N5545
Contextual Info: Aerospace and Defense Product Offering Siliconix MIL–S–19500 Compliant Devices 2N5547JANTX MIL–S–19500/430 Siliconix Part No. Description 2N5547JANTXV MIL–S–19500/430 2N4856JAN MIL–S–19500/385 2N6660JANTX MIL–S–19500/547 2N4856JANTX MIL–S–19500/385

SDT13305

Abstract: SDT12302 SDT13303 SDT7603 SDT7732 2N2811 2N2812 2N2813 2N2814 2N4070
Contextual Info: Device Type VCEO hFE V Min/Max @ IC (A) 2N2811 2N2812 2N2813 2N2814 2N4070 2N4071 2N4301 2N5006 2N5008 2N5218 2N5288 2N5289 2N5313 2N5315 2N5317 2N5319 2N5327 2N5540 2N5542 2N5622 2N5624 2N5626 2N5628 2N5730 2N5854 2N6128 2N6216 2N6217 2N6249 2N6250 2N6251