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    2N6055 TRANSISTOR Search Results

    2N6055 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    2N6055 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N6055

    Abstract: No abstract text available
    Text: 2N6055 Darlington complementary silicon power transistor 15.26 Transistors Darlington . Page 1 of 1 Enter Your Part # Home Part Number: 2N6055 Online Store 2N6055 Diodes Darlington complementary silicon power transistor Transistors Integrated Circuits Optoelectronics


    Original     		PDF 2N6055 2N6055 com/2n6055

    2N6055 MOTOROLA

    Abstract: Darlington Silicon Power Transistor 10 amp npn darlington power transistors 2N6055 100 amp npn darlington power transistors 2N6056 2N6056 MOTOROLA POWER BIPOLAR JUNCTION TRANSISTOR power transistors 03 transistor
    Text: MOTOROLA Order this document by 2N6055/D SEMICONDUCTOR TECHNICAL DATA NPN 2N6055 2N6056* Darlington Complementary Silicon Power Transistors *Motorola Preferred Device . . . designed for general–purpose amplifier and low frequency switching applications.


    Original     		PDF 2N6055/D 2N6055 2N6056* 2N6056 2N6055/D* 2N6055 MOTOROLA Darlington Silicon Power Transistor 10 amp npn darlington power transistors 2N6055 100 amp npn darlington power transistors 2N6056 2N6056 MOTOROLA POWER BIPOLAR JUNCTION TRANSISTOR power transistors 03 transistor

    2N6055

    Abstract: 2N6056 2N6054 2N6053
    Text: SavantIC Semiconductor Product Specification 2N6055 2N6056 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·Low collector saturation voltage ·DARLINGTON ·Complement to type 2N6053;2N6054 APPLICATIONS ·General-purpose power amplifier and low


    Original     		PDF 2N6055 2N6056 2N6053 2N6054 2N6055 2N6056 2N6054

    BD139

    Abstract: BU108 BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N6055 2N6056* Darlington Complementary Silicon Power Transistors *Motorola Preferred Device . . . designed for general–purpose amplifier and low frequency switching applications. DARLINGTON 8 AMPERE COMPLEMENTARY


    Original     		PDF 2N6055 2N6056 2N6056* TIP73B TIP74 TIP74A TIP74B TIP75 BD139 BU108 BU326 BU100

    2N6055

    Abstract: 2N6056 2N6053 2N6054
    Text: Inchange Semiconductor Product Specification 2N6055 2N6056 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·Low collector saturation voltage ·DARLINGTON ·Complement to type 2N6053;2N6054 APPLICATIONS ·General-purpose power amplifier and low


    Original     		PDF 2N6055 2N6056 2N6053 2N6054 2N6055 2N6056 2N6054

    2n6053

    Abstract: No abstract text available
    Text: ductoi ^Pioducii, Unc. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2N6053/2N6055 COMPLEMENTARY POWER DARLINGTON The 2N6053 Is a silicon epitaxial base PNP transistor in monolithic Darlington configuration and


    Original     		PDF 2N6053/2N6055 2N6053 2N6055 2N6053

    2N6055 transistor

    Abstract: 2N6055 2N6053 NPN Darlington transistor Darlington
    Text: 2N6053 PNP 2N6055 NPN COMPLEMENTARY POWER DARLINGTON The 2N6053 is a silicon epitaxial base PNP transistor in monolithic Darlington configuration and are mounted in Jedec TO-3 metal case. They are intended for use in power linear and switching applications.


    Original     		PDF 2N6053 2N6055 2N6055 2N6053 2N6055 transistor NPN Darlington transistor Darlington

    2N6055

    Abstract: 2N6053
    Text: COMPLEMENTARY POWER DARLINGTON The 2N6053 is a silicon epitaxial base PNP transistor in monolithic Darlington configuration and are mounted in Jedec TO-3 metal case. They are intended for use in power linear and switching applications. The complementary NPN type is the 2N6055


    Original     		PDF 2N6053 2N6055 2N6053 2N6055

    2N6301 MOTOROLA

    Abstract: TP5AT 2N6053 MOTOROLA 2N6053 2N6054 2N6298 2n6299 motorola 2N6301 2N6299 2N6055
    Text: ““~y-q.j iDARLINGTOV COMPLEMENTARY SILICON POWER TRANSISTORS 7 yy’,“Q ‘yvJ /^ . 1 ;‘,/I” . designed for generalbpurpose amplifier and low-speed switching applications. l High DC Current Gain hFE=3OOO Typi@lC=4.0Adc . Collector-Emitter Sustaining Voltage - @ 100 mA


    Original     		PDF 2N6053. 2N6055, 2N6298. 2N6300 2N6054. 2N6056. 2N6299. 2N6301 AN-415) 2N6053, 2N6301 MOTOROLA TP5AT 2N6053 MOTOROLA 2N6053 2N6054 2N6298 2n6299 motorola 2N6301 2N6299 2N6055

    2N6055

    Abstract: No abstract text available
    Text: HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW ITEMS |RFQ| l l Enter Your Part # Home Online Store ¡ Diode s ¡ Transistors ¡ Inte grate d C ircuits ¡ O ptoe le ctronics ¡ Thyristors l Products ¡ Se arch for Parts ¡ R e que st a Q uote ¡ Te st House s


    Original     		PDF 2N6055

    MJ2955

    Abstract: 2N3442 2N3055 2N3713 2N3714 2N3715 2N3716 2N3771 2N3772 2N3773
    Text: Power Transistors TO-3 Case TYPE NO. IC PD BVCBO BVCEO hFE V MIN (V) MIN MIN @ IC VCE(SAT) @ IC PNP (A) MAX (W) NPN 2N3055 MJ2955 15 115 100 60 5.0 - 10 10 117 160 140 20 70 3.0 2N3442 (A) MAX (V) MAX fT (A) (MHz) MIN 3.0 10 2.5 5.0 10 - 2N3713 2N3789


    Original     		PDF 2N3055 MJ2955 2N3442 2N3713 2N3789 2N3714 2N3790 2N3715 2N3791 2N3716 MJ2955 2N3442 2N3055 2N3713 2N3714 2N3715 2N3716 2N3771 2N3772 2N3773

    N6055

    Abstract: RCA-2N6055 SUS CIRCUIT 2N6055 2N6056 darlington npn rca TYPES OF TRANSISTORS TEKTRONIX TRANSISTORS
    Text: 3875081 G E SOLID STATE~Öl Dlf| 3375001 0017534 7 ^ $ 3Darlington Power ? _ 2N6055, 2N6056 File Number 8-Ampere Silicon N-P-N Darlington Power Transistors 60- and 80-Volt, 100-Watt Types


    OCR Scan     		PDF 3fl75Dfll 0D17534 2N6055, 2N6056 80-Volt, 100-Watt O-204AA RCA-2N6055 0D17H3Ã N6055 SUS CIRCUIT 2N6055 darlington npn rca TYPES OF TRANSISTORS TEKTRONIX TRANSISTORS

    2N6220

    Abstract: 2N6256 2N6258 PNP 2N60 2N6033 2N6047 2N6049 2N6049E 2N6050 2N6051
    Text: 4ÖE J> m Ö1331Ö7 00DÜ442 322 SEMELAB SEMELAB LT D TW t> \ BI POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY HI-REL Type Number 2N6033 2N6047 2N6049 2N6049E 2N6050 2N6051 2N6052 2N6053 2N6054 2N6055 2N6056 2N6057 2N6058 2N6059 2N6077 2N6078 2N6079


    OCR Scan     		PDF 2N6033 2N6047 2N6049 2N6049E 2N6050 750-12k 2N6051 2N6052 2N6220 2N6256 2N6258 PNP 2N60

    2N6053

    Abstract: 2N6055 2N6054 2N6056
    Text: ¿2&M0SPEC DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS PNP 2N6053 2 N6054 General-purpose power amplifier and low frequency switching applications NPN 2N6055 2N6056 FEATURES: * Low Collector-Emitter Saturation Voltage VCE SAT =2.0V(Max.)@lc=4.0A =3.0V(Max.)@lc=8.0A


    OCR Scan     		PDF 2N6053 2N6055 N6054 2N6056 2N6055 2N6054 2N6056 2N6054,

    2N6055

    Abstract: 2N6053 2N6054 2N6056 2N6055 transistor 2N6052
    Text: Data Sheet Central Semiconductor Corp. 2N6053 2N6054 PNP 2N6055 2N6056 NPN COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTOR 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC TO-3 CASE Manufacturers of W orld Class Discrete Semiconductors


    OCR Scan     		PDF 2N6053 2N6054 2N6055 2N6056 2N6053, 2N6055) 2N6054, 2N6056) 2N6055 transistor 2N6052

    Untitled

    Abstract: No abstract text available
    Text: HARRIS SEIUCOND SECTOR SbE D • M3DE271 □ D 4 0 im 2N6055, 2N6056 Tb3 H H A S File Number 563 8-Ampere Silicon N-P-N Darlington Power Transistors 60- and 80-Volt, 100-Watt Types With Gain of 750 at 4 Amperes TERMINAL DESIGNATIONS Features: ■ Operation from 1C without predriver


    OCR Scan     		PDF M3DE271 2N6055, 2N6056 80-Volt, 100-Watt 2N6055 2N6056 92CS-I9942

    Untitled

    Abstract: No abstract text available
    Text: 2N6055, 2N6056 File N u m b e r 563 8-Ampere Silicon N-P-N Darlington Power Transistors 60- and 80-V olt, 100-Watt Types W ith Gain o f 750 at 4 Amperes TERM INAL DESIGNATIONS Features: • Operation from 1C w ith o u t predriver ■ Low leakage at high temperature


    OCR Scan     		PDF 2N6055, 2N6056 100-Watt O-204A

    2N6096

    Abstract: 2N6055 2N6055 MOTOROLA N6056 2N6056
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N 6055 2 N6056* Darlington Com plem entary Silicon Power Transistors "Motorola Preferred Device . . . designed for general-purpose amplifier and low frequency switching applications. • • • • DARLINGTON 8 AMPERE


    OCR Scan     		PDF 2N6055 2N6056 N6056* 2N6055 2N6056 2N6096 2N6055 MOTOROLA N6056

    Untitled

    Abstract: No abstract text available
    Text: General Transistor Corporation CASE TO-3 le MAX = 2-50A V c e o (sus) = 35-500V NPN Power Transistors PNP Type No. complement MJ1000 MJ900 MJ1001 MJ3001 MJ13014 MJ901 MJ2501 DARLINGTON yes yes yes yes MJ10012 MJ13015 MJ 13330 VCEO (sus) IC (max) (v) (A)


    OCR Scan     		PDF 5-500V MJ1000 MJ900 MJ1001 MJ3001 MJ13014 MJ901 MJ2501 MJ10012 MJ13015

    MC7805CK

    Abstract: MC7812Ck MC7815CK MC7824CK LM340K-24 LM7812KC lm7805kc LM340K24 LM7824KC 78h05ck
    Text: Selection of Equivalents for Monolithic Voltage Regulators, Darlington Transistors, Rectifiers and Switching Transistors LAMBDA TYPE * LAS723A LAS723B LAS1000 LAS1100 LAS1405 LAS1406 LAS1408 LAS1410 LAS1412 LAS1415 LAS14U LAS1505 LAS 1506 LAS1508 LAS1510


    OCR Scan     		PDF LAS723A LAS723B LAS1100 LAS1405 LM123K LM223K LM323K SH0323 LAS1406 LAS1408 MC7805CK MC7812Ck MC7815CK MC7824CK LM340K-24 LM7812KC lm7805kc LM340K24 LM7824KC 78h05ck

    2n5882

    Abstract: No abstract text available
    Text: Power Transistors TO-3 Case TYPE NO. »C *>D evceo lc hFE B VC ÊO v CE SAT ® lc TYP (Â) PNP NPN 2N3055 MJ2955 1 2N3442 <W) MAX 00 (V) TYP (A) 00 (A) (MHZ) MIN MIN MM MAX 15 115 100 60 5.0 . 10 3.0 10 2.5 10 117 160 140 20 70 3.0 5.0 10 . MAX MIN


    OCR Scan     		PDF 2N3055 2N3442 2N3713 2N3714 2N3715 2N3716 2N3771 2N3772 2N3773 2N4913 2n5882

    SE9300

    Abstract: 2N3715 FAIRCHILD 2N4909 2N6383 2N5878 2N6053 2N6054 2N6055 2N6056 2N6103
    Text: FAIRCHILD TRANSISTORS POWER POWER TRANSISTORS BY Icmax, POLARITY AND ASCENDING VcEO Item DEVICE NO. Polarity NPN | PNP v CEO hFE V Max Min/Max @ic A v CE(sat) V Max @ ic A *T MHz Min(Typ) PO(Max) W TC=25°C (Cont'd) Package No. •c = 8.0 A Max Continuous (Cont’d)


    OCR Scan     		PDF 2N6055* 2N6053* 750/18K 2N5878 2NS876 2N6056* 2N6054* 2N6306 2N6307M SE9300 2N3715 FAIRCHILD 2N4909 2N6383 2N6053 2N6054 2N6055 2N6056 2N6103

    2N3442

    Abstract: 2N5875 NPN Transistor 2N3055 darlington 2N3055 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790
    Text: Pow er Transistors TO-3 Case TYPE NO. •c Pd BVc b O b v C e o @ Ic hFE VCE SAT @ <c *TYP (A) NPN 2N3055 PNP MJ2955 2N3442 (W) MAX 15 115 (A) (V) (V) MIN MIN MIN 100 60 5.0 — 00 (A) 10 (MHZ) MIN MAX MAX fT *TYP 3.0 10 2.5 . 10 117 160 140 20 70 3.0 5.0


    OCR Scan     		PDF 2N3055 MJ2955 2N3442 2N3713 2N3789 2N3714 2N3790 2N3715 2N3791 2N3716 2N3442 2N5875 NPN Transistor 2N3055 darlington

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors TO-3 Case TYPE NO. •c Pd BVc b O hFE bvceo @lc VCE SAT O <c *TYP (W) (A) NPN PNP MAX (A) (V) (V) MIN MIN MIN MAX (V) (A) MAX *T *TYP (MHZ) MIN 15 115 100 60 5.0 — 10 3.0 10 2.5 10 117 160 140 20 70 3.0 5.0 10 . 2N3789 10 150 80 60


    OCR Scan     		PDF 2N3789 2N3790 2N3771 2N3772 2N6055 2N6053 2N6056 2N6054 2N6057 2N6050