2N6425 Search Results

Contextual Info: 2N6425A Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar PNP Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar PNP Device in a

2SA1402E

Abstract: 2SC2224 2SA1371E
Contextual Info: POWER SILICON PNP Item Number Part Number I C 5 10 15 20 30 i:;:'''', .U(U 2SA1407E 2SA1407F 2N2894 KF3509 2N3209 2N3209L PZT3906 RXT3906 RXT3906 2SA1404D 2SA1404E 2SA1404F 2SA1541 2SA1476 2SA964 2SC2224 BFN19 ~~~J~A 35 40 2SA795 MJ373B 2N6424 MJ3739 2N6425

5005K

Abstract: 2N6575 2N6587 2N65 2N6395 2N6534 2N6583 NPN 1K 2N6385 2N6394
Contextual Info: 4flE D • Ö1331Ö7 0000444 SEMELABL 1TS ■ S M L B S E M E L A B LT3> 7^;.«/ HI-REL BI-POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY Type Num ber Rei Code 2N6385 2N6394 2N6395 2N6408 2N6414 2N6420 2N6421 2N6422 2N6423 2N6424 2N6425 2N6436 2N6437

Contextual Info: 2N6425 Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar PNP Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar PNP Device in a

2N6425

Contextual Info: 2N6425 Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar PNP Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar PNP Device in a

2N6425A

Contextual Info: 2N6425A Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar PNP Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar PNP Device in a

Contextual Info: 2N6424 2N6425 SILICON PNP POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6424 and 2N6425 are silicon PNP power transistors designed for high speed switching and high voltage amplifier applications. MARKING: FULL PART NUMBER

Contextual Info: I SEMELAB pic - SELECTOR GUIDE DISCRETE BI-POLAR DEVICES TypeNo 2N6423 2N6424 2N6425 2N6425A 2N6436 2N6437 2N6438 2N6448 2N6461 2N6462 2N6463 2N6464 2N6465 2N6466 2N6467 2N6468 2N6469 2N6496 2N6500 2N6511 2N6512 2N6513 2N6514 2N6534 2N6535 2N6536 2N6537 2N6542

k2645

Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
Contextual Info: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

TRIAC 97A6

Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
Contextual Info: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1

la 4440 amplifier circuit diagram 300 watt

Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Contextual Info: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode

2N3738 equivalent

Abstract: 2N3054 2N3054A 2N3583 2N3584 2N3585 2N3738 2N3739 2N6049 2N6420
Contextual Info: Power Transistors TO-66 Case TYPE NO. NPN 2N3054 2N3054A 2N3583 2N3584 2N3585 2N3738 2N3739 PNP 2N6049 2N6420 2N6421 2N6422 2N3740 2N3740A 2N3741 2N3741A 2N3766 2N3767 2N4231 2N4231A 2N4232 2N4232A 2N4233 2N4233A 2N4240 2N4296 2N4298 2N4299 2N4910 2N4911 2N4912

SCR 2N6399

Abstract: 2N6424 2N6399 2N6407 2N63 2N6384 2N6385 2N6386 2N6387 2N6388
Contextual Info: SEMELAB LTD Type N°. 37E » Option"^ Po,ari,V Package VCEO fil33ia? QGOOOSfl 2 • S M L B ^ nJ hr e < VCE/'C PD 2N6384 2N6385 2N6386 2N6387 2N6388 SCREEN SCREEN NPN NPN NPN NPN NPN 103 T03 T0220 10220 T0220 60 80 40 60 80 10 10 8 10 10 lk-20k lk-20k lk-20k

2N8211

Abstract: 2NS298 2n830 2N8300 2N3054 2N3054A 2N3583 2N3584 2N3585 2N3736
Contextual Info: Power Transistors TO-66 Case T Y P E NO. NPN PNP •c Pd A M AX (W ) ie (A) BV C b o (V) bvCEO MIN MIN MIN M AX 90 90 250 375 500 250 325 60 60 80 80 80 100 50 40 70 60 90 80 500 350 500 500 40 60 80 80 80 100 100 275 350 400 50 90 140 55 55 175 250

MC2259

Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
Contextual Info: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the

Diode 400V 5A

Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
Contextual Info: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM

JANS2N3741

Abstract: ne 545 d
Contextual Info: Microsemi PNP Transistors : P a cka g e O u tlin e M il i Data Spec Sheet : ID PD iC V c b o V c e o V e b o V C E sat @ IC <w> (A) (V) (V) (V) (V) (m A ) HFE m in (dB ) -5 100 80 5.5 1.5 2.5 70 200 23776 11.8 11.8 -5 100 80 5.5 1.5 2.5 30 90 545 23781 11.8

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

2N5428

Contextual Info: Power Transistors TO-66 Case TYPE NO. NPN 2N3054 2N3054A 2N3583 2N3584 2N3585 2N3738 2N3739 PNP 2N6049 2N6420 2N6421 2N6422 2N3740 2N3740A 2N3741 2N3741A 2N3766 2N3767 2N4231 2N4231A 2N4232 2N4232A 2N4233 2N4233A 2N4240 2N4296 2N4298 2N4299 2N4910 2N4911 2N4912

2n3739

Abstract: 2N3738 2n3739 motorola 2N6425
Contextual Info: MOTOROLA SC XSTRS/R F 12E D | b3fe.725M MOTOROLA TECHNICAL DATA HIGH VOLTAGE SILICON POWER TRANSISTORS POWER TRANSISTORS NPN SILICON 2 2 5 ,3 0 0 VO LTS 20 W ATTS Collector-Emitter Sustaining Voltage VCEOfsus = 225 Vdc 5 -° mAdc 2N3738 } = 300 Vdc @ l c = 5.0 mAdc (2N3739)

2N8261

Contextual Info: Power Transistors TO-66 Case TYPE NO. te A NPN PNP 2N3054 Pd (W) MAX bvcbo hFE (V) b v CEO (V) MIN MIN MIN MAX le (A) VCE(SAT) Iß (A) (V) MAX (MHz) MIN 4.0 25 90 55 25 150 0.5 1.0 0.5 0.8 2N3054A 2N6049 4.0 75 90 55 25 150 0.5 0.5 0.5 0.8 2N3583 2N6420

2N3738

Abstract: 2N3054 2N3054A 2N3583 2N3584 2N3736 2N6049 2N6420 2N6421 2N6422
Contextual Info: Power Transistors a v ii -j K Jy a TO-66 Case TYPE NO. •c A PNP NPN 2N3054 Pd (W) bvc b o bvceo (V) (V) ie (A) hFE VCE(SAT) ® «e (V) (A) MIN MIN MIN MAX 4 .0 25 90 55 25 1 50 0 .5 1.0 0 .5 0 .8 0.8 MAX MAX h {MHz) MIN 2N 3054A 2N6049 4 .0 75 90 55

STI-3007

Abstract: STI-3007 A STI3007 2N546b SE7020 2N3583 2N3584 2N3738 2N3739 2N4296
Contextual Info: SE MICO ND UC TO R TECHNOLOGY OSE D I fl13b 4 Sfl 00□0221 1 1 SEMICONDUCTOR TECHNOLOGY, INC. ^ L l l i L y N J ; U L HIGH VOLTAGE SILICON MEDIUM POWER TRANSISTORS • -r ' w oO -n/ g 0, 0H c c , ct t J 3131 S.E. Jay Street " Stuart, Florida 34997 407 283-4500 • TWX - 510-953-7511