2SB1101 Search Results

2SB1101

Abstract: 2SD1601
Contextual Info: JMnic Product Specification 2SB1101 Silicon PNP Power Transistors DESCRIPTION ・With TO-220 package ・Complement to type 2SD1601 ・DARLINGTON ・High DC current gain APPLICATIONS ・For low frequency power amplifier applications PINNING PIN DESCRIPTION

Contextual Info: 2SB1101,2SB1102 Silicon PNP Triple Diffused HITACHI Application Low frequency power amplifier complementary pair with 2SD1601, 2SD1602 Outline TO -220A B 2 1 1. Base 2. C ollector Flange 3. Emitter 1 2 3 . . A 4.5 kQ 500 Q (Typ) (Typ) ^ l ' D ¿ 3 Absolute Maximum Ratings (Ta 25°C)

2SB1101

Abstract: 2SB1102 Hitachi DSA00493
Contextual Info: 2SB1101, 2SB1102 Silicon PNP Triple Diffused Application Low frequency power amplifier Outline 2SB1101, 2SB1102 Absolute Maximum Ratings Ta = 25°C Ratings Item Symbol 2SB1101 2SB1102 Unit Collector to base voltage VCBO –60 –80 V Collector to emitter voltage

Contextual Info: HITACHI 2SB1101, 2SB1102 SILICON PNP TRIPLE DIFFUSED LOW FREQUENCY”P O W E R ^ M P U F IE R . CO M PLEM ENTARY PAIR WJTH 2 5 0 1 6 0 1 , 2 S 0 1 6 0 2 ! ttrtv 2. OHIrcîof Emitter Dotkoshhh inmm (JEDEC TO-220AB) • ABSOLUTE M AXIM UM RATINGS (T a = 2 rc >

2SB1101

Abstract: 2SB1102 2SD1601 2SD1602
Contextual Info: HITACHI 2SD1601, 2SD1602 SILICON NPN TRIPLE DIFFUSED LOW FREQUENCY POWER AMPLIFIER COMPLEMENTARY PAIR WITH 2SB1101. 2SB1102 1. 0 a « 2. Collecwr Flange 3. Emiltcr (Dimensions ir>mm) (JE D E C TO-220AB) MAXIMUM C O LL E C T O R D ISSIPA T IO N CURVE A B S O L U T E M AXIM UM R A T IN G S (Ta^25°C)

Contextual Info: 2SB1101,2SB1102 Silicon PNP Triple Diffused HITACHI Application Low frequency power amplifier complementary pair with 2SD1601, 2SD1602 Outline 3 Absolute Maximum Ratings T a = 25 °C Ratings Item Symbol 2SB1101 2SB1102 Unit Collector to base voltage ^G B O

2SB1101

Abstract: 2SD1601
Contextual Info: SavantIC Semiconductor Product Specification 2SB1101 Silicon PNP Power Transistors DESCRIPTION •With TO-220 package ·Complement to type 2SD1601 ·DARLINGTON ·High DC current gain APPLICATIONS ·For low frequency power amplifier applications PINNING PIN

2SB1099

Abstract: 2SD1491 2SB1100 2sb111 2SB1072L 2SB1072S 2SB1073 2SB1075 2SB1076M 2SB1077
Contextual Info: - 74 - S % Ta=25'C, *0JttTc=25l3 m 2SB1072L 2SB1072S 2SB1073 2SB1075 2SB1Û76M 2SB1077 2SB1078K 2SB1079 2SB1085 2SB1085A 2SB1086 2SB1086A 2SB1087 2SB1089 2SB1090 2SB1091 2SB1093 2SB1094 2SB1095 2SB1096 2SB1097 2SB1098 2SB1099 2SB1100 2SB1101 2SB1102 2SB1103

Hitachi DSA001650

Contextual Info: 2SB1101, 2SB1102 Silicon PNP Triple Diffused Application Low frequency power amplifier complementary pair with 2SD1601, 2SD1602 Outline TO-220AB 2 1 1 1. Base 2. Collector Flange 3. Emitter 2 3 ID 4.5 kΩ (Typ) 500 Ω (Typ) 3 Absolute Maximum Ratings (Ta = 25GC)

2SB1101

Abstract: 2SD1601
Contextual Info: Inchange Semiconductor Product Specification 2SB1101 Silicon PNP Power Transistors DESCRIPTION ・With TO-220 package ・Complement to type 2SD1601 ・DARLINGTON ・High DC current gain APPLICATIONS ・For low frequency power amplifier applications PINNING

2SB1101

Abstract: 2SB1102 2SD1601 2SD1602
Contextual Info: HITACHI 2SB1101, 2SB1102 SILICON PNP TRIPLE DIFFUSED LOW FREQUENCY POWER AMPLIFIER COMPLEMENTARY PAIR WITH 2SD1601, 2SD1602 !, B ase 2 Collect« FM artgtJ Í. Emitter (Dimensions in mm (JEDEC TO-220AB) MAXIMUM COLLECTOR DISSIPATION CURVE • ABSOLUTE MAXIMUM RATINGS (Ta=25°C)

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

2SB816

Abstract: 2SB1212 2SB921 2SB873 2SA1120 2SB1085B 2sb 989 2SB941 2SC4341 2SB1416
Contextual Info: 59 - fi 2SB 980 2SB 2SB 2SB 2SB 2S8 2SB 981 982 983 , 984 _ • 985 986 , 2S8 987 2SB 988 « Manuf. T K T tfi T fö T S tB t u q n 989 991 992 993 994 995 996 2SB 2SB 2SB 2SB 2SB 997 ^ 998 999 1000 1000A H 3 SANYO 9ÇR77C; 2SB775 2SB816 2SB825 2SB816 * 2SA17Q3

761b nec

Abstract: 2SB1010 2sb1041 761a 2sa684 nec 2SB737 2SB927 2SA684 2SB686 761-B
Contextual Info: 51 - m % * Type No. 2SB 733 2SB 734 „ « Manuf. = £ SANYO M. 32 TOSHIBA m NEC ÍL HITACHI B M 2SB927 2SB739 1 2SA1705 2SB740 « ± a FUJITSU te T MATSUSHITA h m MITSUBISHI □ — A ROHM 2SB101Q 2SA684 2SB1035 2SB1041 2SB 736 m 2SA1338 2SB 736A H 2SA1338

2SA818

Abstract: 2SB681 2SB849 2SC4341 2SB681 TOSHIBA 2SB601 2SB686 2SB688 2SB558 2sb669
Contextual Info: 49 - S € Type No. a « Manuf. E ft SANYO 2SB 648 B ÍL 2SA1209 2SB 648A S ÍL 2SA1209 2SB 649 ÍL 2SB 649A S ÎL 2SB 650 H ÎL 2SB 653A ÍL 2SB 654A ÎL 2S8 655A i 2SB 668 • 2SA1011 Ä TOSHIBA Is NEC ÍL HITACHI i t i FUJITSU fâ T MATSUSHITA h m MITSUBISHI

SSP35n03

Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Contextual Info: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A

Contextual Info: 2SB1389 Silicon PNP Triple Diffused HITACHI Application Low frequency power amplifier Outline Absolute Maximum Ratings Ta = 25 °C Item Symbol Ratings Unit C o lle cto r to base vo lta g e ^G B O -6 0 V C o lle cto r to e m itte r vo lta g e V CEo -6 0 V

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *

2SC4748

Abstract: 2SC5306 K20-K k08 transistor
Contextual Info: POWER TRANSISTOR •General switching Package code Ratings Type Ito. DPAK 2SC4499 L /<S) z s e e iis / TO *12« 28C2889 MOO 2SD781 28D975 ' TO-22Ô 2S8566® 2SB566A® AB 2SC2812 2SC2613 2SC2816 e scsim 2SC2979 2SC4913 2SC5273 28047m 2SD476A® 2S)1136

2SB1101

Abstract: 2SB1389 Hitachi DSA00398
Contextual Info: 2SB1389 Silicon PNP Triple Diffused Application Low frequency power amplifier Outline TO-220FM 2 1 12 3 1. Base 2. Collector 3. Emitter ID 4.5 kΩ Typ 500 Ω (Typ) 3 2SB1389 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage

2SB1101

Abstract: 2SB1389
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

BUY46

Abstract: 2SB657 motorola transistors to-220 SK3026 BD148 BDX14 BD587 bd189
Contextual Info: POWER SILICON TRANSISTORS Item Number >C Part Number Manufacturer Type Max A V(BR)CE0 on PD Max toN Max (A) (s) ICBO Max hFE fT ON) Min (Hz) r (CE)ut Toper Max (Ohms) Max (°C) 555m 555m 300n 140 140 140 140 140 300n 01u 140 J 140 J TO-220AB TO-220AB TO-220

2sb1099

Abstract: 2SB1100 2sd1593 2SD1594 2SD1617 LFPA 2SD1591 2SD1595 2SD1583-Z 2SD1584
Contextual Info: - 256 - i+ 2SD1583-Z 2SD1584 2SD1584-Z 2SD1585 2SD1586 2SD1587 2SD1588 2SD1589 2SD159Q 2SD1591 2SD1592 2SD1593 2SD1594 2SD1595 i?nicfiT b'jui'j a i 2SD1599 2SD1600 2SD1601 2SD1602 2SD1603 2SD1604 2SD1605 2SD1606 2SD1608 2SD1609 2SD1610 2SD1611 2SD1614 2SD1615

2SB873

Abstract: 948a 2SB1010 2S897 939-940 2SB1095 2SA1296 2SB1103 2SB 2SB B 947A 2SB1017
Contextual Info: - s « tt Type No. 2SB 922 2SB 922L 2S8 525 2SB 925A 2SB 2S6 2SB 2SB 2SB 2SB 926 J 927. 930 930A 93! 932 2SB 2SB 2SB 2SB 2SB 2SB 933 934 936 937 938 939 « Manuf. = m SANYO * 2 TOSHIBA S S NEC 2SA1227 S tL HITACHI * ± a FUJITSU te T MATSUSHITA h MITSUBISHI