2SB11 Search Results

smd marking BA

Abstract: 2sb111 2SB1118
Contextual Info: Transistors SMD Type PNP Epitaxial Planar Silicon Transistors 2SB1118 Features Low collector-to-emitter saturation voltage. Very small size making it easy to provide highdensity, Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter

2SB1119

Contextual Info: Transistors SMD Type PNP Epitaxial Planar Silicon Transistors 2SB1119 Features Very small size making it easy to provide highdensity, small-sized hybrid IC’ s. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -25

BD transistor

Abstract: smd marking BD 2SB1189 BD marking
Contextual Info: Transistors SMD Type Medium Power Transistor 2SB1189 Features High breakdown voltage, BVCEO=-80V, and high current, IC=-0.7A. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base Voltage VCBO -80 V Collector-emitter Voltage VCEO -80

2SB1192

Abstract: 2SD1770
Contextual Info: Inchange Semiconductor Product Specification 2SB1192 Silicon PNP Power Transistors DESCRIPTION ・With TO-220Fa package ・High VCEO ・Large PC ・Complement to type 2SD1770 APPLICATIONS ・Power amplifier ・TV vertical deflection output PINNING PIN DESCRIPTION

2SB1157

Abstract: 120-80 2sb115 2SD1712
Contextual Info: Inchange Semiconductor Product Specification 2SB1157 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-3PFa package ・Complement to type 2SD1712 ・High fT ・Wide area of safe operation APPLICATIONS ・For high power amplifier applications PINNING

2SB1100

Abstract: 2SD1591 2SB1100 npn Ic 10a npn DARLINGTON 10A
Contextual Info: Product Specification www.jmnic.com 2SD1591 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・DARLINGTON ・Complement to type 2SB1100 APPLICATIONS ・Low frequency power amplification ・Low speed power switching applications PINNING

2SB1185

Abstract: 2SD1762
Contextual Info: JMnic Product Specification 2SB1185 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・Low collector saturation votlage ・Complement to type 2SD1762 APPLICATIONS ・For use in low frequency power amplifer applications PINNING PIN DESCRIPTION

2SB1154

Abstract: 2SD1705
Contextual Info: JMnic Product Specification 2SB1154 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-3PFa package ・Complement to type 2SD1705 ・Low collector saturation voltage ・Satisfactory linearity of hFE APPLICATIONS ・For power switching applications PINNING

2SB1157

Abstract: 2SD1712
Contextual Info: JMnic Product Specification 2SB1157 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-3PFa package ・Complement to type 2SD1712 ・High fT ・Wide area of safe operation APPLICATIONS ・For high power amplifier applications PINNING PIN DESCRIPTION

2SB1160

Abstract: 2SD1715
Contextual Info: JMnic Product Specification 2SB1160 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-3PFa package ・Complement to type 2SD1715 ・High fT ・Satisfactory linearity of hFE ・Wide area of safe operation APPLICATIONS ・For high power amplifier applications

2SB1101

Abstract: 2SD1601
Contextual Info: JMnic Product Specification 2SB1101 Silicon PNP Power Transistors DESCRIPTION ・With TO-220 package ・Complement to type 2SD1601 ・DARLINGTON ・High DC current gain APPLICATIONS ・For low frequency power amplifier applications PINNING PIN DESCRIPTION

Contextual Info: O rd e rin g n u m b e r : EN 2 0 4 0 A J 2SB1122/2SD1622 SA\YO PN P/N PN Epitaxial Planar Silicon Transistors i Low-Frequency Power Amp Applications Applications . Voltage regulators relay drivers, lamp drivers, electrical equipment Features . Adoption of FBET process

2SB1118

Abstract: 2sd1618
Contextual Info: ¡ O rd e rin g n u m b e r .E N 1 7 8 4 B 2SB1118/2SD1618 N0.1784B PNP/NPN Epitaxial Planar Silicon Transistors Low-Voltage, High-Current Amp, _ Muting Applications Features . Low collector-to-emitter saturation voltage. . Very small size making it easy to provide high-density,

marking 210

Contextual Info: O rd e rin g n u m b e r: E N 4 5 3 7 F eatures •Composite type with 2 transistors PNP contained in one package,facilitating high-density mounting. • The FP210 is formed with 2 chips.being equivalent to the 2SB1123,placed in one package. A bsolute M axim um R atings at Ta = 25°C

103 transistor

Abstract: B1183 2SB1183F5 marking code SSs 2SD1759 transistor PNP 2sb transistor LB 122 transistor
Contextual Info: 2SB1183F5 Transistor, PNP, Darlington pair Features Dimensions Units : mm available in CPT F5 (SC-63) package 2SB1183F5 (CPT F5) package marking: B1183*-0, where ★ is hFE code and □ is lot number Darlington connection provides high dc current gain (hFE)

B1326

Abstract: 2SB1175 2SD1745
Contextual Info: Power Transistors 2SB1175 2SB1175 Silicon PNP Epitaxial Planar Type Package Dimensions Power Switching Complementary Pair with 2SD1745 •Features U n it : mm 3.7max. 7.3max. • Low collector-eim itter saturation voltage Vce<,.o 3.2m ax. £L • Good linearity of DC c u rre n t gain (hFE)

D1669

Abstract: 2SB1136 2SD16 AOOS
Contextual Info: O rd e rin g n u m b e r: EN2092B 2SB1136/2SD1669 No.2092B PNP/NPN Epitaxial Planar Silicon Transistors 50V/12A Swtching Applications A pplications • Relay drivers, high-speed inverters, converters, and other general high-current switching applications.

2SB1190

Abstract: 2SB1190A 2SD1770 2SD1770A
Contextual Info: Power Transistors 2SB1190, 2SB.il 90A 2SB1190, 2SB1190A Silicon PNP Epitaxial Planar Type Package Dimensions Powêr Amplifier TV Vertical Deflection Output Complementary Pair.with 2SD1770, 2SD1770A •Features U n it I mm 10.5±0.5 É 4.8m ax. N H ,9.8max.

2SB1192

Abstract: 2SB1192A 2SD1772 2SD1772A
Contextual Info: Power Transistors 2SD1772, 2SD1772A 2SD1772, 2SD1772A Silicon PNP Triple-Diffused Planar Type Package Dimensions Power Amplifier Vertical Deflection Output Complementary Pair with 2SB1192, 2SB1192A • Features U n it ! m n 4 . 4 m a \. 10 . 2 m a \. ¡2 9 m a \

2SD1608

Abstract: 2SB1108
Contextual Info: P o w er T ra n s is to rs 2SD1608 2S D 1608 Package D im ensions Silicon NPN Triple Diffused Planar Darlington Type M edium Speed Power S w itching C om plem entary Pair w ith 2SB1108 • Features • H igh D C c u r re n t gain hFE • H igh s p e e d s w itc h in g

2SB1148

Abstract: 2SB1148A 2SD1752 2SD1752A panasonic 2SB
Contextual Info: Power Transistors 2 S 1 1 4 8 , B 2 2SB1148, 2SB1148A S B 1 1 4 8 A Silicon PNP Epitaxial Planar Type Package Dimensions Low Voltage Switching Complementary Pair w ith ‘2S D 1752, 2S D 1752A U nit I mm • Features • Low co llecto r-eim itter saturation voltage V ceisjo

Contextual Info: UTC 2SD1691 NPN EPITAXIAL SILICON TRANSISTOR LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT FEATURES *High Power Dissipation: Pc=1.5W Ta=25℃ *Complementary to 2SB1151 1 TO-126 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS (Ta=25℃) PARAMETER Collector-Base Voltage

SMD TRANSISTOR MARKING 2A

Abstract: smd transistor 2A MARKING 2A smd 2a transistor BC MARKING 05AF 2SB1188 transistor smd marking BC TRANSISTOR SMD w smd transistor marking bc
Contextual Info: Transistors SMD Type Medium Power Transistor 2SB1188 Features Low VCE sat . VCE(sat) = -0.5V (Typ.) (IC/IB = -2A / -0.2A) Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base Voltage VCBO -40 V Collector-emitter Voltage VCEO -32 V Emitter-base Voltage

2SB1190

Abstract: 2SD1772 EMIC
Contextual Info: Inchange Semiconductor Product Specification 2SB1190 Silicon PNP Power Transistors DESCRIPTION ・With TO-220 package ・High VCEO ・Large PC ・Complement to type 2SD1772 APPLICATIONS ・Power amplifier ・TV vertical deflection output PINNING PIN DESCRIPTION