2SB1155 Search Results

2SB1155

Abstract: 2SD1706
Contextual Info: SavantIC Semiconductor Product Specification 2SB1155 Silicon PNP Power Transistors DESCRIPTION •With TO-3PFa package ·Complement to type 2SD1706 ·Low collector saturation voltage ·Satisfactory linearity of hFE APPLICATIONS ·For power switching applications

2SB1155

Abstract: 2SD1706
Contextual Info: Power Transistors 2SB1155 Silicon PNP epitaxial planar type For power switching Complementary to 2SD1706 Unit: mm • Features ● ● ■ Absolute Maximum Ratings TC=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO –130 V Collector to emitter voltage

Contextual Info: Power Transistors 2SD1706 2SD1706 Silicon NPN Epitaxial Planar Type Power Switching Complementary Pair with 2SB1155 • Features Package Dimensions • Low collector-emitter saturation voltage Vce<mo • Good linearity of DC current gain (Iife) • High collector current (Ic)

2SB1155

Abstract: 2SD1706
Contextual Info: Power Transistors 2SB1155 Silicon PNP epitaxial planar type For power switching Complementary to 2SD1706 M Di ain sc te on na tin nc ue e/ d Unit: mm • Features ● ■ Absolute Maximum Ratings TC=25˚C Parameter Symbol Ratings Unit Collector to base voltage

2SB1155

Abstract: 2SB1255 2SD1706
Contextual Info: Power T ransistors 2SB1155 2SB1155 Silicon PNP Epitaxial Planar Type Package Dimensions Power Switching Complementary Pair with 2 S D 1706 U nit : mm 5 2max. . 15.5max. • Features ' \ Ì .2 6.9min. • Low collector-eim itter saturation voltage VcE<sao

Contextual Info: Power Transistors 2SB1155 Silicon PNP epitaxial planar type For power switching Complementary to 2SD1706 Unit: mm • Features Low collector to emitter saturation voltage VCE sat Satisfactory linearity of foward current transfer ratio hFE Large collector current IC

2SB1155

Abstract: 2SD1706
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1155 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -80V(Min) ·Good Linearity of hFE ·Low Collector Saturation Voltage: VCE(sat)= -0.5V(Max.)@ IC= -7A ·Complement to Type 2SD1706

2SB1155

Abstract: 2SD170 2SD1706
Contextual Info: Power Transistors 2SD 1706 2SD1706 Silicon N P N Epitaxial Planar Type Package Dim ensions Pow er Switching Com plem entary Pair with 2SB1155 U n it ! mm 5 2 max. • Features ‘ 1/3.2 6 .9 m i n . Ö H -*1 • Low collector-em itter saturation voLtage VcEtsao

2SB1155

Abstract: 2SD1706 PC803
Contextual Info: JMnic Product Specification 2SB1155 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-3PFa package ・Complement to type 2SD1706 ・Low collector saturation voltage ・Satisfactory linearity of hFE APPLICATIONS ・For power switching applications PINNING

2SB1255

Abstract: 2SB1155 2SD1706
Contextual Info: Power Transistors 2 SB 1 1 5 5 2SB1155 Silicon PNP Epitaxial Planar Type Package Dim ensions Pow er Switching C om plem entary Pair with 2 S D 1 706 Unit : mm 5 2max. . 15.5max. • Features 6.9min. 1 ¡ -fe r z i- • Low collector-eim itter saturation voltage VcE<sao

2SD1706

Abstract: 2SB1155
Contextual Info: Inchange Semiconductor Product Specification 2SB1155 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-3PFa package ・Complement to type 2SD1706 ・Low collector saturation voltage ・Satisfactory linearity of hFE APPLICATIONS ・For power switching applications

2SB1531

Abstract: 2SD2340 equivalent 2SB1255 2sb1492 2SD2328 2SA1185 2SB1421 2SC4535 2SD1457 2SD1457A
Contextual Info: Transistors Selection Guide by Applications and Functions • Silicon Large Power Transistors Application Functions Vceo (V) General-use lc VcE(sat) (A) (V) Darlington High-hfE Ib (mA) <0.8 (A) 7 TOP-3(a) (D64) 700 TOP-3F(a) (D67) 50 7 100 5 <2 3 300 140

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

SC-62

Abstract: 2SD1662 2SD1663 2SD1664 2SD1665AM 2SD1665M 2SD1666 2SD1667 2SD1668 2SD1669
Contextual Info: - 260 - Ta=25<C , *EPfàTc=25‘ C m 2SD1662 2SD1663 2SD1664 2SD1665AM 2SD1665M 2SD1666 2SD1667 s tt j s s fô T O—A n —A D —A 3$ rn « Œ VCBO «CEO (V) (V) PSW 100 PSW 1500 100 Pc Pc* (A) (W) (W) »CBO unax; UA) 100 15 5 n m « ÌC(DC) , V'CB (V)

STK411-230E

Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Contextual Info: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for

K 2411

Abstract: k2411 IX 3354 a699a 3SK2411 2Sa1950 T092L 2SB0774 3SK271 c 5019
Contextual Info: Transistors Selection Guide by Applications and Functions # High Frequency Silicon Transistors for Tuners (FETs included) Package (N o.) Band Appli­ cation T O -9 2 N ew S Type (0 3 4 ) (D 46) M Type (D 35) SS-M ini Type S-Mini Type S-Mini Type Mini Type

2SB0774

Abstract: 2SC4714 2sc5340 2SA2004 2SB160 2SB642
Contextual Info: Transistors Selection Guide by Applications and Functions • Silicon Medium-Power Transistors (continued) P a c k a g e (N o.) Application Functions TO-126 (D49 * , D50) U Type (D36) V cE (sail VcEO MT3 Type (D40) MT4 Type (D41 ) TO-202 (D51) T0-220(a)

3866S

Abstract: transistor a999 bs 7818 -1995 transistor tt 2206 A999 transistor TT 2206 transistor a1535A 8340UAS transistor 3866S 2SD 4515
Contextual Info: H Integrated Circuits MOS LSIs Page MOS LSI Type No. Page Type No. Page Type No. Page Type No. Page M N 171608 42 A M N 18P73210 43 M N 3210 69 M N 5179/H 91 M N 171609 42 AM N 18P73215 43 M N 3214 69 MN5181 91 M N 3102 69 M N 53 00 0 Series 55 M N 33 00 Series

D2375

Abstract: D1259A d1267a D1265A transistor 2SA1949 2sd2328a TRANSISTORS SELECTION GUIDE D1261A C3795 2SB1526
Contextual Info: Transistors Selection Guide by Packages • SS-Mini Type, SS-Mini Flat-Lead Packages (D1) c e o (V) lc ( m A ) \ \ V 15 10 (* 6V) 20 *A 2SC 5363 30 80 40 2SA1806 2SC4809 2SC5295 (65mA) 2SC4808 2SD2345 150 f 2SA1791 ! 2SC4656 185 I 2SB1463 I 2SD2240 2SD2240A

A1534

Abstract: T092 2SB642 T092L 2SB0774 SS-Mini 3 2SA1495 2SB946 2SA1124 A1534A
Contextual Info: Transistors Selection Guide by Applications and Functions • Silicon Medium Power Transistors (continued) A Tentative ( : Com plem entary pair Panasonic 125 Part Number List ■ Discrete Devices Old Part Nos | New Part Nos [ Package Sym bol 1 SS Mini 3P: SS-Mini 3-pin

2SA1301 TOSHIBA

Abstract: da 1191 2sa970 Toshiba 2SB754 2SA904A 2SA1038 2Sa1173 2SA1323 2SB646 2SA1782
Contextual Info: - 24 Si - tt « € Manuf- B S 5 a a h h = SANYO » 2SA1115 * TOSHIBA $ m b NEC ÍL HITACHI 1onn 2SA1782 2SA1048 2SA1782 2SA1048CL 3t 3? X 3Ë K «£ « T -y-viry 0 3Ï 0 ÍL B ÍL 0 ÍL 2SA1249 2SA1162 2SA1337 2SA1220A 2SA812 ZSB631K 2SB827 2SB817 2SA1207

2SA1441

Abstract: 2sb1340 2SA1712 2SA1763 2SB1020 2SB921 2SA1516 1729H 2SA1156 2SA1639
Contextual Info: 39 tt 2SA 2 SA 2 SA 2S A 2S A 2S A 2SA 2 SA 2SA 2SA 2SA 2SA 2 SA 2S A 2S A 2S A 2SA 2 SA 2SA 2SA 2SA 2SA 2 SA 2S A 2SA 2S A 2S A 2S A 2S A 2SA 2SA 2SA 2SA 1715 1716 1717 171 8 1719 1 720 1721 1722 1723 1725 1 726 1727 172 8 1729 1730 1731 1732 1733 1734 1735

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *