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    2SC1061 F Search Results

    2SC1061 F Result Highlights (5)

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    LM2917MX/NOPB Texas Instruments Frequency to Voltage Converter 14-SOIC -40 to 85 Visit Texas Instruments Buy
    LM2907MX/NOPB Texas Instruments Frequency to Voltage Converter 14-SOIC -40 to 85 Visit Texas Instruments Buy
    LM2917M/NOPB Texas Instruments Frequency to Voltage Converter 14-SOIC -40 to 85 Visit Texas Instruments Buy
    LM2907M/NOPB Texas Instruments Frequency to Voltage Converter 14-SOIC -40 to 85 Visit Texas Instruments Buy
    LM2917N-8/NOPB Texas Instruments Frequency to Voltage Converter 8-PDIP -40 to 85 Visit Texas Instruments Buy

    2SC1061 F Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2sa671

    Abstract: 2SA670 2SC1061 2sa671 equivalent 2SC1061 PNP
    Text: SavantIC Semiconductor Product Specification 2SA671 Silicon PNP Power Transistors DESCRIPTION •With TO-220 package ·Complement to type 2SC1061 ·Low collector saturation voltage Note:type 2SA670 with short pin APPLICATIONS ·Designed for use in low frequency


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    PDF 2SA671 O-220 2SC1061 2SA670 O-220) 2sa671 2SC1061 2sa671 equivalent 2SC1061 PNP

    2SC1061

    Abstract: 2SA671 transistor 2SC1061 2sA671 transistor
    Text: 2SA671 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER TO-220 ! Complement to 2SC1061 ABSOLUTE MAXIMUM RATINGS TA=25℃ ℃ Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current (DC) Collector Dissipation (Tc=25℃)


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    PDF 2SA671 O-220 2SC1061 2SC1061 2SA671 transistor 2SC1061 2sA671 transistor

    2SC1061

    Abstract: 2SC1060 2Sc1060 equivalent 2SC1061 B 2sc1061 equivalent 2sc1061 datasheet 2SA671
    Text: Inchange Semiconductor Product Specification 2SC1061 Silicon NPN Power Transistors DESCRIPTION ・With TO-220 package ・Low saturation voltage ・Complement to type 2SA671 ・Note: type 2SC1060 with short pin APPLICATIONS ・For use in low frequency power


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    PDF 2SC1061 O-220 2SA671 2SC1060 2SC1061 2Sc1060 equivalent 2SC1061 B 2sc1061 equivalent 2sc1061 datasheet 2SA671

    2SC1061

    Abstract: 2SC1060 2Sc1060 equivalent 2SA671 2SC1061 C
    Text: Product Specification www.jmnic.com 2SC1061 Silicon NPN Power Transistors DESCRIPTION ・With TO-220 package ・Low saturation voltage ・Complement to type 2SA671 ・Note: type 2SC1060 with short pin APPLICATIONS ・For use in low frequency power amplifier applications


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    PDF 2SC1061 O-220 2SA671 2SC1060 2SC1061 2Sc1060 equivalent 2SA671 2SC1061 C

    2SC1061

    Abstract: 2sc1060 2SA671 2SC1061 C 2SC1061-C
    Text: SavantIC Semiconductor Product Specification 2SC1061 Silicon NPN Power Transistors DESCRIPTION •With TO-220 package ·Low saturation voltage ·Complement to type 2SA671 ·Note: type 2SC1060 with short pin APPLICATIONS ·For use in low frequency power amplifier applications


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    PDF 2SC1061 O-220 2SA671 2SC1060 2SC1061 2SA671 2SC1061 C 2SC1061-C

    2SC1061

    Abstract: transistor 2SC1061 2sc1061 npn transistor datasheet 2SA671 2sc1061 npn transistor
    Text: 2SC1061 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER TO-220 ! Complement to 2SA671 ABSOLUTE MAXIMUM RATINGS TA=25℃ ℃ Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current (DC) Collector Dissipation (Tc=25℃)


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    PDF 2SC1061 O-220 2SA671 2SC1061 transistor 2SC1061 2sc1061 npn transistor datasheet 2SA671 2sc1061 npn transistor

    2SA671

    Abstract: 2SC1061 2SA670 2SC1061 PNP
    Text: JMnic Product Specification 2SA671 Silicon PNP Power Transistors DESCRIPTION ・With TO-220 package ・Complement to type 2SC1061 ・Low collector saturation voltage Note:type 2SA670 with short pin APPLICATIONS ・Designed for use in low frequency power amplifier applications


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    PDF 2SA671 O-220 2SC1061 2SA670 O-220) 2SA671 2SC1061 2SC1061 PNP

    2SC1061

    Abstract: 2SA671 2sA671 transistor Transistor 2sC1061 2sa671 equivalent 2sC1061 transistor 2sc1061 equivalent
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA671 DESCRIPTION •Low Collector Saturation Voltage: VCE SUS = -1.0V(Max)@ IC= -2.0A ·DC Current Gain : hFE= 35-320@ IC= -0.5A ·Complement to Type 2SC1061 APPLICATIONS ·Designed for use in low frequency power amplifier


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    PDF 2SA671 2SC1061 2SC1061 2SA671 2sA671 transistor Transistor 2sC1061 2sa671 equivalent 2sC1061 transistor 2sc1061 equivalent

    2SC1061 f

    Abstract: No abstract text available
    Text: , One. J. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2SA671 Silicon PNP Power Transistor DESCRIPTION • Low Collector Saturation Voltage: VCE(susr -1.0V(Max)@ lc= -2.0A • DC Current Gain


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    PDF 2SA671 2SC1061 O-220C -50mA 2SC1061 f

    Untitled

    Abstract: No abstract text available
    Text: J.S.11S.U <~>z ni-C,onaiLct:oi , One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973) 376-2922 (212)227-6005 FAX: (973) 376-8960 2SA671 Silicon PNP Power Transistor DESCRIPTION • Low Collector Saturation Voltage: VCE(SUS)= -1.0V(Max)@ lc= -2.0A


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    PDF 2SA671 2SC1061 O-220C -50mA

    2SA616

    Abstract: 2sa620 2SC1014 2SC1079 2SA688 2SC634A 2SA678 2SC1013 2SC1008A 2SA628A
    Text: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) PartNumber VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob ºñ°í (V) (V) (mA) (mW) (ºC) VCE(V) Ic(mA) (MHz) (pF) 2SA603 -60 -8 -200 300 150 140 -1 -10 250* 7.5 2SC943 2SA604


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    PDF 2SA603 2SC943 2SA604 2SA605 2SA606 2SC959 2SA607 2SC960 2SA608 2SA609 2SA616 2sa620 2SC1014 2SC1079 2SA688 2SC634A 2SA678 2SC1013 2SC1008A 2SA628A

    2sc1093

    Abstract: 2SC1026 2SC1015 2SC1091 2SC1093 equivalent 2SC1015 equivalent 2SC1018 2sc1027 2SC1020 2SC1003
    Text: Absolutes maximum ratings Ta=25ºC PartNumber VCBO VEBO Ic (V) (V) Pc 40 4 500 2SC1002 36 4 1A 2SC1003 36 4 2A 2SC1004 1100 5 500 2SC1004A 1500 5 500 2SC1005 1100 5 5A 2SC1005A 1400 5 5A 2SC1006 2SC1007 2SC1008 2SC1008A 2SC1009 2SC1010 50 60 80 100 50 50


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    PDF 2SC1002 2SC1003 2SC1004 2SC1004A 2SC1005 2SC1005A 2SC1006 2SC1007 2SC1008 2SC1008A 2sc1093 2SC1026 2SC1015 2SC1091 2SC1093 equivalent 2SC1015 equivalent 2SC1018 2sc1027 2SC1020 2SC1003

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


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    PDF 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B

    jrc386d

    Abstract: SN76131N LM1011N ne545b HA1457W X0238CE upc1018c UA78GKC MJ13005 MN8303
    Text: ECG/TCG/NTE ECG10 ECG11 ECG12 ECG13 ECG14 ECG15 ECG16 ECG17 ECG18 ECG19 ECG20 ECG21 ECG22 ECG23 ECG24 ECG25 ECG26 ECG27 ECG28 ECG29 ECG30 ECG31 ECG32 ECG33 ECG34 ECG35 ECG36 ECG37 ECG38 ECG39 ECG40 ECG41 ECG42 ECG43 ECG44 ECG45 ECG46 ECG47 ECG48 ECG49 ECG50


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    PDF ECG10 ECG11 ECG12 ECG13 ECG14 ECG15 ECG16 ECG17 ECG18 ECG19 jrc386d SN76131N LM1011N ne545b HA1457W X0238CE upc1018c UA78GKC MJ13005 MN8303

    2SA670

    Abstract: 2SA671 2SC1061
    Text: Inchange Sem iconductor Product Specification S ilicon PNP Power Transistors 2SA671 DESCRIPTION • With T 0 2 2 0 package • Complement to type 2SC1061 • Low collector saturation voltage Note:type 2SA670 with short pin APPLICATIONS - /*v • Designed for use in low frequency


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    PDF 2SA671 T0220 2SC1061 2SA670 2SC1061

    2SC1061

    Abstract: transistor 2SC1061 2sC1061 transistor 2SA671 2sc1061 npn transistor 2SC1061 PNP 2SC1061 f L50C power Transistor 2SC1061
    Text: Æ&m o s p e c NPN SILICON POWER TRANSISTORS NPN .designed for use in low frequency power amplifier applications 2SC1061 FEATURES: * Low Collector-Emitter Saturation Voltage v CE satf 1 0 V (Max @ I c =2.0A,I b=0.2A * DC Current Gain hFE= 35-320@lc= 0.5A


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    PDF 2SA671 2SC1061 transistor 2SC1061 2sC1061 transistor 2SA671 2sc1061 npn transistor 2SC1061 PNP 2SC1061 f L50C power Transistor 2SC1061

    2SC789

    Abstract: 2sc1060 2SC1061 250314 2SD331 2SA473 2SA489 2SA490 2SA670 2SA671
    Text: TYPE NO. P O L A R IT Y Pow er Transistors CASE M A X IM U M r a t in g s 'c pd IW A) V CEO (V) V C E (S A T ) h fe min max 'c (A) VCE (V) max 'c (V) (A) fT min COM PLE­ (M Hz) TYPE 2SC789 2SC790 2SC1060 2SC1061 2 S C 1 17 3 2SC1626 N N N N N N T O -22 0


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    PDF 2SC789 O-220 2SA489 2SC790 2SA490 2SC1060 2SA670 2SC1061 250314 2SD331 2SA473 2SA489 2SA490 2SA670 2SA671

    2sc1060

    Abstract: 2SC1061 2SA670 2SA671 JE1A to220aa TO-220-AA 2SCI061 TO-220AA
    Text: 2 S C 1 6 , 2 S C 1 6 1 v y 3 > NPN h â î tum SILIC O N NPN TRIPLE DIFFUSED_ 2SA670, 2S A 671 ¿: 3 > 7 'J * > £ >J ^< 7 LOW FREQUENCY POWER AMPLIFIER C o m p le m e n ta ry p a ir w ith 2 S A 6 7 0 and 2SA671 2SC 1060 1. ^ X • Base 2. z iv 7 9 '• C o lle c to r


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    PDF 2SA670, 2SA671 2SA670 2SC1060 2SC1061 O-220AA) T0-220AB) 2SC1060, 2SC1061 2sc1060 2SA671 JE1A to220aa TO-220-AA 2SCI061 TO-220AA

    2sd331

    Abstract: 2sc1061
    Text: Power Transistors TYPE POLA­ CASE NO. RITY MAXIMUM RATINGS P* VcEO Ic W (A) (V) Hre min max Ic (A) VCE (V) VcE(«ag max (V) Ic (A) fT COMPLE­ min MENTARY (MHz) TYPE . 2SD366 2SD366A 2SD330 2SD331 2SB513 2SB513A 2SB514 2SB515 2SB523 P P P P P TO-220 TO-220


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    PDF 2SB513 2SB513A 2SB514 2SB515 2SB523 2SB526 2SB529 2SB566AK 2SC789 2SC790 2sd331 2sc1061

    2n6125

    Abstract: No abstract text available
    Text: Power Transistors TYPE POLA­ NO. RITY M AXIM UM RATINGS CASE Pd IC VCEO mW (A) (V) H FE VCE(sat) min max IT CO M P L E ­ IC VCE max IC min MENTARY (mA) (V) (V) (A) (MHz) TYPE 0.5 0.2 0.2 1 0.5 2 2 2 2 2 0.8 0.5 0.5 0.8 0.8 2 0.5 0.5 2 2 30 50 50 5 30 MH8100


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    PDF MH8100 MH8106 MH8108 MH8700 MH0810 MH0816 MH0818 2n6125

    2SB512P

    Abstract: tip318 TIP31N TIP308 MH0870 TIP298 2sb435 2sc1060 MH8106 MH8500
    Text: TYPE NO. P O L A R ITY Power Transistors M A X IM U M R A TIN G S Pd 'c W A) V C E(SA T) h fe V CEO (V) 'c min max (A) V CE (V) 1 0.5 0.2 0.2 1 1 max 'c fT min (V) (A) 2 2 2 2 2 2 0.8 0.8 0.5 0.5 1.2 0.8 2 2 0.5 0.5 3 2 5 30 50 50 5 5 (MHz) COMPLE­ M ENTARY


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    PDF MH0870 O-220 MH8700 MH8100 O-22C MH0810 MH8106 MH0816 H8108 2SB512P tip318 TIP31N TIP308 TIP298 2sb435 2sc1060 MH8500

    2SC793

    Abstract: 2SC633A 2SA653 2SC1060 C633A 138B 2SC1061 2SC1213 2SC519 2SC520
    Text: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English


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    PDF 2SC633A 2SC634A 2SC1079 2SC1080 2SC1382 2SC793 2SC633A 2SA653 2SC1060 C633A 138B 2SC1061 2SC1213 2SC519 2SC520

    2sb526

    Abstract: 2sc1060 2SC789 2SD359 2SA816 2SB529 2SD331 2SD365 2SB513A 2SB514
    Text: Power Transistors TYPE POLA­ NO. RITY P Pd IC VCEO mW (A) (V) 25 20 3 2 20 10 10 min max 80 50 30 40 2 2 0.8 50 20 80 40 55 55 160 320 320 300 300 10 40* 30 25 25 2 2 20 60 60 40 50 55 60 40 40 35 300 200 240 240 320 35 40 70 40 40 320 400 240 240 2SB 513A


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    PDF 2SB513A 2SB514 2SB515 2SB523 2SB526 2SB529 2SB566A 2SC789 2SC790 2SC1060 2SD359 2SA816 2SD331 2SD365

    2SA532

    Abstract: BC109 BC184 BC549 BC317 2SC734 Y MS181A BC159 8 2SC876 TTP31A ML78M06A BC357
    Text: ALPHANUMERIC INDEX TYPE NO. 057-2G 1611G 1620G 1621-2G 1623G 1641G 1N4001 1N4002 1N40Û3 1N4004 1N4005 1N4006 1N4007 1N5391 1N5392 1N5393 1N5394 1N5395 1N5396 1N5397 1N5398 1N5399 1N5400 1N5401 IN5402 1N5403 1N5404 1N5405 1N5406 1N5407 1N5408 2021-1G 2023G


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    PDF 057-2G 1611G 1620G 1621-2G 1623G 1641G 1N4001 1N4002 1N4004 1N4005 2SA532 BC109 BC184 BC549 BC317 2SC734 Y MS181A BC159 8 2SC876 TTP31A ML78M06A BC357