2SC435 Search Results

2SC4350

Abstract: NPN POWER DARLINGTON TRANSISTORS
Contextual Info: Inchange Semiconductor Product Specification 2SC4350 Silicon NPN Power Transistors DESCRIPTION ・With TO-220 package ・High DC current gain ・DARLINGTON APPLICATIONS ・For high speed power switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SC4359 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm 5.0±0.2 (0.7) 15.0±0.3 21.0±0.5 Parameter Symbol Rating Unit Collector-base voltage (Emitter open)

2SC4356

Abstract: transistor c 4106
Contextual Info: M ITSUBISHI SEM ICONDUCTO R SM A LL-SIG N A L TRANSISTO R 2SC4356 FOR HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION M itsubishi 2 S C 4 3 5 6 is a silicon N P N epitaxial type transistor d e sign e d relay OUTLINE DRAWING u ,mm

2SC4357

Abstract: VCEO-60V oc sc62
Contextual Info: SMALL-SIGNAL TRANSISTOR 2SC4357 FOR HIGH CURRENT DRIVE AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION , 2SC4357 is a silicon NPN epitaxial type transistor designed for high OUTLINE DRAWING Uni,mm collector current, for high voltage. FEATURE • H ig h voltage

A03M

Abstract: 2SC4354
Contextual Info: 2SC4354 h 7 > V ^ i ; / T ransistors 2SC 4354 7° U NPN '> U =l > h 7 > V * 2 Triple Diffused Planar NPN Silicon Transistor " j ^ V ^ f f l/H ig h Voltage Switching 1 a S E f ^ 5 « V c EO= 4 0 0V 2 ) V c e sat) V c e (s a t)= 0 .3 V (Typ.) (Ic /Ib = 1 A /0 .2 A )

transistor marking 2A H

Abstract: mitsubishi vcb 2sc4357 mitsubishi symbol marking La 4108
Contextual Info: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SC4357 FOR HIGH CURRENT DRIVE AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SC4357 is a silicon NPN epitaxial type transistor designed for high collector current, for high voltage.

2SC4350

Abstract: NPN POWER DARLINGTON TRANSISTORS
Contextual Info: JMnic Product Specification 2SC4350 Silicon NPN Power Transistors DESCRIPTION ・With TO-220 package ・High DC current gain ・DARLINGTON APPLICATIONS ・For high speed power switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base

2SC4350

Contextual Info: SavantIC Semiconductor Product Specification 2SC4350 Silicon NPN Power Transistors DESCRIPTION •With TO-220 package ·High DC current gain ·DARLINGTON APPLICATIONS ·For high speed power switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to

D1647

Abstract: sd 1651 2SD1651 2SD1834 2SD1930 2SC3439 2SC3616 d1651 2SD689 2SD1645
Contextual Info: - 246 - £ m *t % Marmi. T ype No. 2SD 1621 ^ H n e SANYO * M £ T O SHIBA □ P 'Ss m. NEC 2SD1898 2SC4357 2SC4672 2SD2403 2SD1119 2SC3438 2SD1834 ¥ 2SC2873 2SD 1624 / ¥ 2SC4541 2SD 1625 $ ^ 2SD 1631 2SD 1632 2SD 1633 ^ 2SD 1634 2SD 1636 2S0 1637 2SD1368

D1559

Abstract: 2SC4351 m027 TD-7509
Contextual Info: — y 3 1 • y — b # - ' J > b > n '7 Darlington Power Transistor 2SC4351 N P N lfc f^ + v r ^ y 2 S C 4 3 5 1 á , ït5 M ;M 7 W " - U > OA • F A ^ ^ í7 /^ X Í- ^ ^ 7 " 7 U =i> h 7 > v ^ i ' h > ^ 0,7 - F x ^ X ^ - C t o ÿ k X i - ^ W P W M ( # - U > h >JtíJí;

2SC4351

Contextual Info: DATA SHEET DARLINGTON POWER TRANSISTOR 2SC4351 NPN SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR HIGH-SPEED SWITCHING The 2SC4351 is a high-speed Darlington power transistor. This PACKAGE DRAWING (UNIT: mm) transistor is ideal for high-precision control such as PWM control for

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SC4359 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm 5.0±0.2 (0.7) 15.0±0.3 21.0±0.5 Parameter Symbol Rating Unit Collector-base voltage (Emitter open)

SC-92

Abstract: 2SC4359
Contextual Info: Power Transistors 2SC4359 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm 5.0±0.2 0.7 15.0±0.3 21.0±0.5 Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 900 V Collector-emitter voltage (E-B short)

2SC4358

Abstract: 44MAX
Contextual Info: Power Transistors 2SC4358 2SC4358 Preliminary Silicon N P N Epitaxial Planar Type Package Dim ensions V id eo Output U nit • mm • Feature 4.4max. 10.2m ax. 5.7m ax. • H igh tra n sitio n fre q u e n c y (ft) 2.9max 0 3 .1 + 0.1 Ve G.5maxl.o m a x .

2SB1632

Abstract: 2sc3211 2sc3795 2sc3743 2SC2841 2SC3171 2SC3210 2SC3403 2SC3527 2SC3528
Contextual Info: Transistors Selection Guide by Applications and Functions • Switching Power Transistors Appli­ V cbo cation (V) VcEO (V ) Io (A) VcE (sat) (V) lc Ib tf (/JS) (A) (mA) 150/200/ 80 5 <1.6 5 IW 1 250 330 200 7 < 1 5 500 0.75 500 400 2 1 <1 200 1 Package (No.)

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

2SD2334

Abstract: 2sc4814 2SD2076 2216y 2SD1546 2sd2190 2SD1930 2SD1755 2sc2562 2SC4062
Contextual Info: - m. £ € Manuf. T y p e No. 2 SD 2174 fâ 2SD 2175 □— A 2SD 2176 - # h SANYO T 2SC4488 M 3E TO S H I B A m B NEC 2SC3677 2SD1593 2SC3665 2SD1312 B HITACHI ÎL * ± a FU JITSU tö T MATSUS H I T A z m MITSUBISHI T 2SD 2185 fe' T 2S0 2186 □— A 2SD 2187

D1559

Abstract: 2SC4351
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

SC3150

Abstract: c2979 3171 s 2sc3153 2sc4044s 2SD1390 2SC3174 2sc3180n 2SC3344 2sd1335
Contextual Info: - m % tt Type No. £ Manuf. 2SC 3151 =- ft ft 2SC 3152 . s. n 2SC 3 1 5 3 / 3 ft 2 SC 3150 n SANYO TOSHIBA 2SC2792 2SC2792 2SC 3154 X = ft 2SC3151 2SC2790 H n 2SC3152 2SC2790 2SC 3156 ^ = ft 2SC3153 2SC2791 a n B « 2SC3039 2SC3236 2SC 3159 CD 2SC3344 2SC 3160

2SC4542

Abstract: 4509 2SC3303 2sc3153 2sd1314 4522 2SC4068 2SC4536 4517A 2SC2555
Contextual Info: - 192 - SU £ Type No. tt £ Manuf. □— A 2SC 4506 H # SANYO M £ TOSHIBA B a NEC 2SC3789 2SC2551 2SC3209 2SC 4507 ✓ 2SC4106 2SC2553 2SC2518 B HITACHI Ai Ä dr ii FUJITSU fâ T MATSUSHITA 2SC 4508 * 2SC4107 2SC3626 2SC4423 2SC3306 2SC 4510 2SC4424 2SD1313

X9116WM8I-2.7T1

Contextual Info: Transistors Selection Guide by Applications and Functions •Switching Power Transistors Appli­ V cbo VcEO Io VcE (sat) cation (V) (V) (A) (V) 150/200/ 250 80 5 <1.6 Package (No.) lc tf (/JS) Ib MT3 (D43) (A) (mA) 5 IW MT4 (D46) TO TO-220E TO-220D N Type

2SB1335A

Abstract: 2SD2037 2SD2033 2SD2061 28c43 2sb1357 2SB1359 2sd2041 2SD2096 2SD1856
Contextual Info: BSE D ROHM CORP Tr T ä S a n T Q O O S TQ Ì 7 Transistors 11 GaAs Dual-Gate MES FETs Type 3SK 212 Function Absolute Maximum Ratings Ta=25°C Dimensions (Unit: mm) Electrical Characteristics (Ta=25°C) Vos(V) lo(mA) PD(mW) Tch(°C) NF(dB) PG(dB) f(MHz)

RTIP144C

Abstract: RTIN141C RTIN141S 2SD947 equivalent 2SD612K equivalent of transistor 2SA1115 RTIN241C rtip241 2sd880 equivalent RTIN140C
Contextual Info: m&ttm -urn h "7 > v X £ /T ra n sisto rs ddp h 7> y of Transistor Equivalent Products S M t r o iS H li, L T 2 fiJffl< t £ £ i \ LT IS * * * ' 6 S & It should be borne in mind that following listings are made according to the transistors’ maximum ratings.

SB1335A

Abstract: 2SD2061 2sd2033a 2SB1496 2SB1342 transistor 2sD2091 2SD2394 2SB1370 2SC4354 2SD2041
Contextual Info: Transistors " 7aaa^ 0DD7^ bD*" RH" TO-220 •T0-220FP •TO-220FN •HRT TO-220FP is a TO-220 with mold coated fin for easier mounting and higher PC, 2W. T0-220FN is a low profile by 2mm version of TO-220FP without fin support pin, for higher mounting density. HRT is a taped power transistor package for use with an automatic placement machine.