2SC436 Search Results

2SC4369

Abstract: 2SA1658
Contextual Info: JMnic Product Specification 2SC4369 Silicon NPN Power Transistors DESCRIPTION ・With TO-220F package ・Complement to type 2SA1658 ・Good linearity of hFE APPLICATIONS ・For general purpose applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter

2SC4361

Abstract: 2SA1654
Contextual Info: O rdering number ; EN 2 8 0 7 2SA1654/2SC4361 « P N P / N P N E p i t a x i a l P l a n a r Silicon T r a n s i s t o r s SA W O o. Sw itching A pplications w ith Bias/Resistance i A pplications * Switching circuit, inverter circuit, interface circuit, driver circuit

2SA1658

Abstract: 2SC4369
Contextual Info: SavantIC Semiconductor Product Specification 2SA1658 Silicon PNP Power Transistors DESCRIPTION •With TO-220F package ·Complement to type 2SC4369 ·Good linearity of hFE APPLICATIONS ·For general purpose applications PINNING PIN DESCRIPTION 1 Base 2 Collector

VEBO-15V

Abstract: 2SC4366 DSA003637
Contextual Info: 2SC4366 Silicon NPN Epitaxial ADE-208-1104A Z 2nd. Edition Mar. 2001 Application Low Frequency amplifier Outline MPAK 3 1 2 Note: Marking is “ZI–”. 1. Emitter 2. Base 3. Collector 2SC4366 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit

2SC4363

Abstract: 2SA1656
Contextual Info: O rdering n u m b e r:EN2 8 0 9 2SA1656/2SC4363 i P N P / N P N E pitax ial P l a n a r Silicon T ra n sis to rs Switching Applications with Bias, Resistance i w## Applications S|f * Switching circuit, inverter circuit, interface circuit» driver circuit

2SC4366

Abstract: VEBO-15V Hitachi DSA003752
Contextual Info: 2SC4366 Silicon NPN Epitaxial Application Low Frequency amplifier Outline MPAK 3 1 2 1. Emitter 2. Base 3. Collector 2SC4366 Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Collector to base voltage VCBO 60 V Collector to emitter voltage VCEO

EN3007

Abstract: 741 IC circuit applications 2SC4365 VEBO-15V
Contextual Info: Ordering number:EN3007 NPN Epitaxial Planar Silicon Transistor 2SC4365 VHF, UHF/MIX. OSC. Low-Voltage High-Frequency Amplifier Applications Features Package Dimensions • Low-voltage operation : fT=3.0GHz typ VCE=3V : MAG=12dB typ (VCE=3V, IC=10mA) : NF=1.5dB typ (VCE=3V, IC=5mA)

Contextual Info: Ordering number : EN 2809 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1656/2SC4363 Switching Applications with Bias Resistance

FHC30LG

Abstract: ne72089 KC535C NE388-06 AL307BM IC 78L12 SOT89 KC535B AL307 79L05 hearing aid lm358
Contextual Info: RF TRANSISTORS Type P - p- n-p N - n-p-n MMBR5031 2SA1778 2SC3770 2SC4269 MMBR5179 2SC3837K 2SC3545 2SC3771 2SA1669 2SC4364 2SC4270 2SC4365 2SC3838K BFS17,BFS17A 2SC3841 BFR92A BFR93 2SC4569 BFR93P 2SC3774 BFR92P 2SC3775 BFR93A BFR92 2SC4568 2SC4857 MMBR911

marking ZI SOT

Abstract: VEBO-15V 2SC4366 Low frequency amplifier
Contextual Info: Transistors IC SMD Type Silicon NPN Epitaxial 2SC4366 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 1 0.55 Low Frequency amplifier. +0.1 1.3-0.1 +0.1 2.4-0.1 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter

Hitachi DSA002755

Contextual Info: 2SC4366 Silicon NPN Epitaxial Application Low Frequency amplifier Outline 2SC4366 Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Collector to base voltage VCBO 60 V Collector to emitter voltage VCEO 50 V Emitter to base voltage VEBO 15 V Collector current

New Jersey Semiconductor

Abstract: 2sc4369
Contextual Info: ^£.m.L-don.du.ctoi Lpioducti, One., TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2SC4369 Silicon NPN Power Transistors DESCRIPTION •With TO-220F package •Complement to type 2SA1658 •Good linearity of hFE

ic 4570

Abstract: 2SC4364 ITR06644 ITR06645 ITR06646 ITR06647 ITR06648 ITR06649 ITR06650 ITR06651
Contextual Info: 注文コード No. N 3 0 0 8 2SC4364 No. N 3 0 0 8 30300 NPN エピタキシァルプレーナ形シリコントランジスタ 2SC4364 VHF. UHF / MIX. OSC. 低電圧高周波増幅用 特長 ・低電圧動作：fT=3.0GHz typ（VCE=3V） 。 ：MAG=11dB typ（VCE=3V, IC=3mA）

F J1 3007-2

Abstract: J1 3007-2 J1 3007-1
Contextual Info: Ordering number:ENN3007 NPN Epitaxial Planar Silicon Transistor 2SC4365 VHF, UHF/MIX. OSC. Low-Voltage High-Frequency Amplifier Applications Features Package Dimensions • Low-voltage operation : fT=3.0GHz typ VCE=3V : MAG=12dB typ (VCE=3V, IC=10mA) : NF=1.5dB typ (VCE=3V, IC=5mA)

2sc4367

Abstract: 2SC4367TZ-E PRSS0003DC-A
Contextual Info: 2SC4367 Silicon NPN Epitaxial REJ03G0724-0200 Previous ADE-208-1105 Rev.2.00 Aug.10.2005 Application High Frequency amplifier Outline RENESAS Package code: PRSS0003DC-A (Package name: TO-92 Mod) 1. Emitter 2. Collector 3. Base 3 2 1 Absolute Maximum Ratings

2SC4368

Abstract: 2SA1657 transistor 2sa1657 2sa165
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1657 DESCRIPTION •Collector-Emitter Breakdown Voltage VCEO= -150V Min ·Complement to Type 2SC4368 ·Full-mold package that does not require an insulating board or bushing when mounting.

2SC4369

Abstract: 2SA1658
Contextual Info: Inchange Semiconductor Product Specification 2SC4369 Silicon NPN Power Transistors DESCRIPTION ・With TO-220F package ・Complement to type 2SA1658 ・Good linearity of hFE APPLICATIONS ・For general purpose applications PINNING PIN DESCRIPTION 1 Base 2

2SA1658

Abstract: 2SC4369
Contextual Info: JMnic Product Specification 2SA1658 Silicon PNP Power Transistors DESCRIPTION ・With TO-220F package ・Complement to type 2SC4369 ・Good linearity of hFE APPLICATIONS ・For general purpose applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter

2SC4367

Contextual Info: HITACHI 2SC4367— SILIC O N NPN E PITA X IA L HIGH FR E Q U E N C Y A M PLIFIER b o J E D E C TO-92 MOD. MAXIMUM C O L L E C T O R D ISSIPA TIO N CURVE I A B S O L U T E MAXIMUM R A TIN G S ( T V ’ .V'C, Ite m C o llc v w 10 ¡S y m b o l volwgc UllU

Contextual Info: 2SC4364-2 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V) V(BR)CBO (V)25 I(C) Max. (A)30m Absolute Max. Power Diss. (W)250m Minimum Operating Temp (øC) Maximum Operating Temp (øC)150õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition)

2SA1658

Abstract: 2SC4369 251C
Contextual Info: AOK Pro d u ct S p e cificatio n AOK Semiconductor S ilic o n P N P P o w e r T r a n s is t o r s 2SA1658 DESCRIPTION • W ith T 0 2 2 0 F package • Complement to type 2SC4369 • G o o d linearity o f h FE APPLICATIONS • For general purpose applications

2SB206

Abstract: 2SB205 2SB212 2SC1466 2sd206 2SB214 GERMANIUM TRANSISTOR 2SB208 transistor SE 431 2SD208
Contextual Info: C A T .N o .E 309 2SC431 th ru 2SC436 Use • For high-frequency power amplification • For high-frequency power switching Construction • NPN triple diffusion type SHINDENGEN’S silicon power transistors are all outside comparison in perfor­ mance and really epoch-making to realize that even one piece o f element is

2SC4369

Abstract: 2SA1658
Contextual Info: SavantIC Semiconductor Product Specification 2SC4369 Silicon NPN Power Transistors DESCRIPTION •With TO-220F package ·Complement to type 2SA1658 ·Good linearity of hFE APPLICATIONS ·For general purpose applications PINNING PIN DESCRIPTION 1 Base 2 Collector

2SA1658

Abstract: 2SC4369 2sa165
Contextual Info: Inchange Semiconductor Product Specification 2SA1658 Silicon PNP Power Transistors DESCRIPTION •With TO-220F package ·Complement to type 2SC4369 ·Good linearity of hFE APPLICATIONS ·For general purpose applications PINNING PIN DESCRIPTION 1 Base 2 Collector