2SC491 Search Results

2sc4917

Contextual Info: SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS 2SC4917 INDUSTRIAL APPLICATIONS Unit in mm SW ITCHING REGULATOR A N D HIGH V O LTAG E SW ITCHING APPLICATIONS. HIGH SPEED DC-DC CONVERTER APPLICATIONS. • • 58 Excellent Switching Times : tr = 1.0,08 (Max.) tf= 1.0/us (Max.) at I q = 0.8A

2SC4915

Abstract: MJE 131
Contextual Info: 2SC4915 SPICE2G6 model parameters 20010110 NET LIST .SUBCKT 2SC4915 1 2 3 CB 2 3 LWB 2 5 LWE 4 3 Cpe 4 6 Cpb 5 6 LC 6 1 CC 1 3 CBC 1 2 Q1 6 5 + AREA = .MODEL NPN + IS + BF + NF + VAF + IKF + ISE + NE + BR + NR + VAR + IKR + ISC + NC + RB + IRB + RBM + RE +

2SC4916

Abstract: diode 1a 1500v
Contextual Info: SavantIC Semiconductor Product Specification 2SC4916 Silicon NPN Power Transistors DESCRIPTION •With TO-3P H IS package ·High speed ;high speed ·Low saturation voltage ·Bult-in damper diode APPLICATIONS ·Horizontal deflection output for high resolution display,colorTV

2SC4913

Abstract: DSA003644
Contextual Info: 2SC4913 Silicon NPN Triple Diffused ADE-208-895 Z 1st. Edition Sep. 2000 Application High voltage amplifier Features • High breakdown voltage • V(BR)CEO = 2000 V min Outline TO-220AB 1 2 3 1. Base 2. Collector (Flange) 3. Emitter 2SC4913 Absolute Maximum Ratings (Ta = 25°C)

A1086

Abstract: 2SC4919-S ITR07753 ITR07754 ITR07755 ITR07756 ITR07757 ITR07758 ITR07760 2SC4919
Contextual Info: 2SC4919-S 注文コード No. N A 1 0 8 6 三洋半導体データシート N 2SC4919-S NPN エピタキシァルプレーナ型シリコントランジスタ ミューティング回路 特長 ・超小型パッケージのためセットの小型化 , 薄型化が可能である。

2SC4909

Abstract: 2SC4919 ITR07753 ITR07754 ITR07755 ITR07756 marking DA
Contextual Info: Ordering number:ENN4765 NPN Epitaxial Planar Silicon Transistor 2SC4919 Muting Circuit Applications Features Package Dimensions • Ultrasmall package permitting applied sets to be small and slim. · Small output capacitance. · Low collector-to-emitter saturation voltage.

transistor 2sc4910

Abstract: 2SC4910 2SC4910 npn 13J2
Contextual Info: Ordering num ber: EN44 11 No.4411 _ 2SC4910 NPN Epitaxial Planar Silicon Transistor SA\YO 1 VHF-Band Power Amp Applications Features • On-chip emitter ballast resistors. Absolute Maximum Ratings at Ta = 25°C Collector-to-Base Voltage Vcbo Collector-to-Emitter Voltage

Contextual Info: Ordering number:ENN4411 NPN Epitaxial Planar Silicon Transistor 2SC4910 VHF-Band Power Amplifier Applications Features Package Dimensions • On-chip emitter ballast resistors. unit:mm 2084B [2SC4910] 4.5 1.9 10.5 2.6 1.4 1.0 8.5 1.2 7.5 1.2 1.6 0.5 0.5 1 Specifications

Contextual Info: 2SC4918A6 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)18 V(BR)CBO (V)40 I(C) Max. (A)50m Absolute Max. Power Diss. (W)150m Minimum Operating Temp (øC) Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition)

2SC1815 2SA1015

Abstract: 2SK117 2sk389 2sj74 2SC2240 2SC4667 2sc2458 2sk246 2SC1923 2SC1815
Contextual Info: Transistors T ransistors & D iodes fo r A udio Application A M /FM Tuner Frequency Package . Super Mini SC-59 TO-92 (SC-43) Mini 2SC1923 2SC2668 2SC2714 USM (SC-70) SSM SMQ (SC-61) 2SC4215 2SC4915 3SK126 USQ SMV FM8 SMS TA4007F 3SK160 RF FM 2SK161

Contextual Info: SILICON NPN EPITAXIAL PLANAR T Y P E TRANSISTOR 2SC4915 U nit in HIG H FREQUENCY AM PUFIEFt APPLICATIONS. mm FM , RF, M IX , IF A M PLIFIER APPLICATIONS. • • Small Reverse Transfer Capacitance : Cre = 0.55pF Typ. Low Noise Figure : NF = 2.3dB (Typ.)

2sc4916

Abstract: diode 1a 1500v IE300
Contextual Info: Inchange Semiconductor Product Specification 2SC4916 Silicon NPN Power Transistors DESCRIPTION •With TO-3P H IS package ·High speed ;high speed ·Low saturation voltage ·Bult-in damper diode APPLICATIONS ·Horizontal deflection output for high resolution display,colorTV

Hitachi DSA00279

Contextual Info: 2SC4913 Silicon NPN Triple Diffused Application High voltage amplifier Features • High breakdown voltage • V BR CEO = 2000 V min Outline TO-220AB 1 2 3 1. Base 2. Collector (Flange) 3. Emitter 2SC4913 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings

2SK528

Abstract: 2SC4916 2SK5
Contextual Info: •>';zj>NPN^s?eSì> VM 2SC4916 ex«« O *msfi O Â 7 - x U t '^ c ¥ Ü i / f f l . A 4 7 + 's y B i W ^ a v . : tf= 0 .2 M W * * )(IC P = 5A, IB I (end) = ,A > . * « > £ -? + . : VC B O = 1 5 0 0 V ( » X ) • : V c E ( s a t ) = 5 V ( f t ^ ) ( I c = 5 A . I ß = lA )

2SC4748

Abstract: 2SC5306 K20-K k08 transistor
Contextual Info: POWER TRANSISTOR •General switching Package code Ratings Type Ito. DPAK 2SC4499 L /<S) z s e e iis / TO *12« 28C2889 MOO 2SD781 28D975 ' TO-22Ô 2S8566® 2SB566A® AB 2SC2812 2SC2613 2SC2816 e scsim 2SC2979 2SC4913 2SC5273 28047m 2SD476A® 2S)1136

2SC4915

Contextual Info: 2SC4915 TO SH IBA 2SC4915 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE Unit in mm HIGH FREQUENCY AMPLIFIER APPLICATIONS FM, RF, MIX, IF AMPLIFIER APPLICATIONS • • Small Reverse Transfer Capacitance : Cre = 0.55pF Typ. Low Noise Figure : NF = 2.3dB (Typ.)

Contextual Info: 2SC4915 TOSHIBA 2SC4915 TO SH IBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE U nit in mm HIGH FREQUENCY AM PLIFIER APPLICATIONS FM , RF, M IX , IF AM PLIFIER APPLICATIONS • • Small Reverse Transfer Capacitance : Cre = 0.55pF Typ. Low Noise Figure : NF = 2.3dB (Typ.)

Contextual Info: 2SC4919 Transistors Si PNP LP HF BJT Military/High-RelN V BR CEO (V)15 V(BR)CBO (V)25 I(C) Max. (A)100m Absolute Max. Power Diss. (W)150m Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.800 h(FE) Max. Current gain.3.2k

Contextual Info: Ordering num ber: EN 4411 No.4411 _ 2SC4910 N P N Epitaxial Planar Silicon Transistor VHF-Band Power Amp Applications Features • On-chip emitter ballast resistors. A bsolu te Maximum Ratings atTa=25°C Collector to Base Voltage V cbo Collector to Emitter Voltage

2SC4915

Contextual Info: 2SC4915 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4915 High Frequency Amplifier Applications FM, RF, MIX, If Amplifier Applications Unit: mm • Small reverse transfer capacitance: Cre = 0.55 pF typ. · Low noise figure: NF = 2.3dB (typ.) Maximum Ratings (Ta = 25°C)

mosfet HF amplifier

Abstract: Hf amplifier 200T
Contextual Info: TRANSISTORS High-Frequency Transistors Absolut* maximum rating* tm Application* 2SA1863* SMCP HF amplifier 2SC4918* SMCP HF amplifier 2SA1857 MCP 2SC4400 MCP 2SC4399 Vceo Í »CEO W ! V i 12 15 ifl «fetO (V) (mA) PC (mW) Electrical characteristics (T, = a

Contextual Info: Reliability Tests Report Product Name: 2SC4915 Package Name: SSM 1. Thermal tests Test Item Heat resistance Reflow Heat resistance (Iron) Temperature cycling - Test Condition Peak : 260 deg.C(a moment) Reflow zone : 230 deg.C 30 to 50 s Preheat : 180 to 190 deg.C , 60 to 120 s

Contextual Info: 2SC4913 Silicon NPN Triple Diffused HITACHI Application High voltage amplifier Features • High breakdown voltage • V BR CEO=2000 V m in Outline T 0 -2 2 0 A B IIT | 1 I 1 2 1. Base 2. Collector (Flange) 3. Emitter 2SC4913 Absolute Maximum Ratings (Ta = 25 °C)

transistor 2sc4910

Abstract: N4411 2SC4910 ITR07744 ITR07745 ITR07746 ITR07747 ITR07748 AO1176 44113
Contextual Info: 注文コード No. N 4 4 1 1 2SC4910 No. N4411 30700 2SC4910 特長 NPN エピタキシァルプレーナ形シリコントランジスタ VHF 帯電力増幅用 ・エミッタ安定化抵抗を内蔵。 絶対最大定格 Absolute Maximum Ratings / Ta=25℃