Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    2SK161 Search Results

    SF Impression Pixel

    2SK161 Price and Stock

    Others 2SK161

    RF SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 1-ELEMENT, VERY HIGH FREQUENCY BAND, SILICON, N-CHANNEL, JUNCTION FET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2SK161 119
    • 1 $0.27
    • 10 $0.27
    • 100 $0.18
    • 1000 $0.18
    • 10000 $0.18
    Buy Now

    2SK161 Datasheets (57)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF PDF Size Page count
    2SK161
    Unknown Shortform Transistor PDF Datasheet Short Form PDF 160.05KB 1
    2SK161
    Unknown Shortform Datasheet & Cross References Data Short Form PDF 77.21KB 1
    2SK161
    Unknown Semiconductor Master Cross Reference Guide Scan PDF 118.63KB 1
    2SK161
    Unknown High Frequency Device Data Book (Japanese) Scan PDF 51.7KB 1
    2SK161
    Unknown FET Data Book Scan PDF 101.28KB 2
    2SK161
    Unknown Scan PDF 241.79KB 4
    2SK161
    Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF 101.94KB 1
    2SK161
    Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF 41.12KB 1
    2SK161
    Toshiba Field Effect Transistor Silicon N Channel Junction Type Scan PDF 2.93MB 4
    2SK161
    Toshiba Silicon N channel field effect transistor for FM tuner and VHF band amplifier applications Scan PDF 231.73KB 4
    2SK161
    Toshiba N-Channel MOSFET Scan PDF 259.55KB 5
    2SK161
    Toshiba TO-92 Mini Package Transistors / Junction FETs Scan PDF 73.13KB 1
    2SK1610
    Unknown Shortform Datasheet & Cross References Data Short Form PDF 77.48KB 1
    2SK161-0
    Unknown Shortform Datasheet & Cross References Data Short Form PDF 77.21KB 1
    2SK1610
    Unknown FET Data Book Scan PDF 105.36KB 2
    2SK1610
    Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF 122.67KB 1
    2SK1611
    Panasonic Silicon N-Channel Power F-MOS FET Original PDF 37.17KB 2
    2SK1611
    Unknown Shortform Datasheet & Cross References Data Short Form PDF 77.48KB 1
    2SK1611
    Unknown FET Data Book Scan PDF 105.34KB 2
    2SK1611
    Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF 122.67KB 1

    2SK161 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2SK161

    Abstract: 2SK161GR vI652
    Contextual Info: SILICON N CHANNEL JUNCTION TYPE FIELD EFFECT TRANSISTOR 2SK161 U nit in mm FM TU N ER A P P LIC A T IO N S . VH F B A N D A M P LIF IE R A PP LIC A T IO N S . Low Noise Figure • • : NF = 2.5dB Typ. (f= 100MHz) High Forward Transfer Admittance : |Yfs| = 9mS (Typ.)


    OCR Scan
    2SK161 100MHz) 2SK161 2SK161-0 2SK161-Y 2SK161-GR 2SK161GR vI652 PDF

    Contextual Info: TOSHIBA 2SK161 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2 S K 1 61 FM TUNER APPLICATIONS VHF BAND AMPLIFIER APPLICATIONS Unit in mm — NF = 2.5dB Typ. (f = 100MHz) Low Noise Figure • High Forward Transfer Admittance : |Yfs| = 9mS (Typ.)


    OCR Scan
    2SK161 100MHz) 55MAX PDF

    Contextual Info: 2SK1613 Power F-MOS FETs 2SK1613 Silicon N-Channel Power F-MOS Unit : mm • Features 10.5±0.5 2.0±0.1 ■ Absolute Maximum Ratings Tc = 25˚C Symbol Rating VDSS 900 V Gate-Source voltage VGSS ±30 V DC ID ±5 A Pulse IDP ±10 A EAS * 45 mJ Avalanche energy capability


    Original
    2SK1613 PDF

    Hitachi DSA002780

    Contextual Info: 2SK1618 L , 2SK1618(S) Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline


    Original
    2SK1618 D-85622 Hitachi DSA002780 PDF

    Contextual Info: Power F-MOS FETs 2SK1612 Silicon N-Channel Power F-MOS FET • Features ● High avalanche energy capacity ● VGSS: 30V guaranteed ● Low RDS on , high-speed switching characteristic 5.5±0.2 2.7±0.2 4.2±0.2 0.7±0.1 ● High-speed switching (switching power supply)


    Original
    2SK1612 PDF

    Contextual Info: Power F-MOS FETs 2SK1611 Silicon N-Channel Power F-MOS FET • Features ● High avalanche energy capacity ● VGSS: 30V guaranteed ● Low RDS on , high-speed switching characteristic 5.5±0.2 2.7±0.2 4.2±0.2 0.7±0.1 ● High-speed switching (switching power supply, AC adaptor)


    Original
    2SK1611 PDF

    2SK1610

    Abstract: SC-65 2SK161-0
    Contextual Info: Power F-MOS FETs 2SK1610 Silicon N-Channel Power F-MOS FET • Features ● High avalanche energy capacity ● VGSS: 30V guaranteed ● Low RDS on , high-speed switching characteristic unit: mm 15.0±0.5 500 V VGSS ±30 V DC ID ±13 A Pulse IDP ±26 A EAS*


    Original
    2SK1610 2SK1610 SC-65 2SK161-0 PDF

    2SK1613

    Abstract: SC-65 2sk16
    Contextual Info: Power F-MOS FETs 2SK1613 Silicon N-Channel Power F-MOS FET • Features ● High avalanche energy capacity ● VGSS: 30V guaranteed ● Low RDS on , high-speed switching characteristic 15.0±0.5 ■ Applications 13.0±0.5 V ID Pulse IDP ±5 A ±10 A EAS* Avalanche energy capacity


    Original
    2SK1613 2SK1613 SC-65 2sk16 PDF

    2SC1815 2SA1015

    Abstract: 2SK117 2sk389 2sj74 2SC2240 2SC4667 2sc2458 2sk246 2SC1923 2SC1815
    Contextual Info: Transistors T ransistors & D iodes fo r A udio Application A M /FM Tuner Frequency Package . Super Mini SC-59 TO-92 (SC-43) Mini 2SC1923 2SC2668 2SC2714 USM (SC-70) SSM SMQ (SC-61) 2SC4215 2SC4915 3SK126 USQ SMV FM8 SMS TA4007F 3SK160 RF FM 2SK161


    OCR Scan
    SC-43) 2SC1923 2SC2668 SC-59) 2SC2714 SC-70) 2SC4215 2SC4915 SC-61) 3SK126 2SC1815 2SA1015 2SK117 2sk389 2sj74 2SC2240 2SC4667 2sc2458 2sk246 2SC1815 PDF

    Hitachi DSA00279

    Contextual Info: 2SK1618 L , 2SK1618(S) Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline


    Original
    2SK1618 Hitachi DSA00279 PDF

    2SK161

    Abstract: TA2024 2SK1610 2SK161GR
    Contextual Info: TOSHIBA 2SK161 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2 S K 1 61 Unit in mm FM TUNER APPLICATIONS VHF BAND AM PLIFIER APPLICATIONS 4 .2 M A X . — 1 1 1 I 1 : NF = 2.5dB Typ. (f = 100MHz) High Forward Transfer Admittance : |Yfs| = 9mS (Typ.)


    OCR Scan
    2SK161 100MHz) 2SK161 TA2024 2SK1610 2SK161GR PDF

    2SK1572

    Abstract: 2SK1618 Hitachi DSA00347
    Contextual Info: 2SK1618 L , 2SK1618(S) Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline


    Original
    2SK1618 2SK1572 Hitachi DSA00347 PDF

    Contextual Info: 2SK1610 Power F-MOS FETs 2SK1610 Silicon N-Channel Power F-MOS Unit : mm • Features 10.5±0.5 2.0±0.1 ■ Absolute Maximum Ratings Tc = 25˚C Symbol Rating VDSS 500 V Gate-Source voltage VGSS ±30 V DC ID ±13 A Pulse IDP ±26 A EAS * 170 mJ Avalanche energy capability


    Original
    2SK1610 PDF

    2SK1613

    Contextual Info: Panasonic Power F-MOS FETs 2SK1613 Silicon N-Channel Power F-MOS I Features ►High avalanche energy capability ►V qss : 30V guaranteed ►Low R ds oii , high-speed switching characteristic I Applications ►High-speed switching (switching mode regulator)


    OCR Scan
    2SK1613 capacitance155' 2SK1613 PDF

    Contextual Info: T O SH IB A 2SK161 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2 S K 1 61 FM TUNER APPLICATIONS VHF BAND AMPLIFIER APPLICATIONS Unit in mm 4 .2 M A X. : NF = 2.5dB Typ. (f=100MHz) High Forward Transfer Admittance : |Yfs| = 9mS (Typ.)


    OCR Scan
    2SK161 100MHz) PDF

    Contextual Info: 2SK1618 L , 2SK1618(S) Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter


    OCR Scan
    2SK1618 2SK1618Ã PDF

    2SK1613

    Abstract: SC-65 MJ 1502 S
    Contextual Info: Power F-MOS FETs 2SK1613 Silicon N-Channel Power F-MOS FET • Features ● High avalanche energy capacity ● VGSS: 30V guaranteed ● Low RDS on , high-speed switching characteristic 15.0±0.5 ■ Applications 13.0±0.5 900 V VGSS ±30 V DC ID ±5 A Pulse


    Original
    2SK1613 2SK1613 SC-65 MJ 1502 S PDF

    2SK192

    Abstract: 2SK192 fet 2SK160A 2SK185 2sk180 2sk163 nec 2SK191 2sk163 nec 2sk163 2sk183
    Contextual Info: - 36 - m f =e M £ 2SK160A tt NEC 2SK161 € ffl m m ftt & V* K V *:ft * LF/VHF A J N D -50 GDO FM/VHF RF J N D -18 GDO A 3: ft -50 0 (V) S fé i* (A) X P d/P c h Ig s s (max) ft (W) (A) Vg s (V) Sa M (min) (max) Vd s (A) (A) (V) 4# (Ta=25°C) 1* (min) (max) V d s


    OCR Scan
    2SK160A 2SK161 2SK162 2SK163 2SK165 271/VE: 2SK183V, 183VE 2SK184 13nV//Tiztyp 2SK192 2SK192 fet 2SK185 2sk180 2sk163 nec 2SK191 nec 2sk163 2sk183 PDF

    2SK1614

    Contextual Info: Panasonic Power F-MOS FETs 2SK1614 Silicon N-Channel Power F-MOS I Features ►High avalanche energy capability ►V qss, 30V guaranteed ►Low R ds oii , high-speed switching characteristic I Applications ►High-speed switching (switching mode regulator)


    OCR Scan
    2SK1614 capacitance155' 2SK1614 PDF

    MJ 800

    Contextual Info: P o w e r F -M O S Panasonic F E T s 2SK1611 Silicon N-Channel Power F-MOS I Features ► High avalanche energy capability ► V qss : 30V guaranteed ► Low R ds oii , high-speed switching characteristic I Applications ► High-speed switching (switching mode regulator, AC adaptor)


    OCR Scan
    2SK1611 Ratin100Q MJ 800 PDF

    Contextual Info: 2SK1611 Power F-MOS FETs 2SK1611 Silicon N-Channel Power F-MOS Unit : mm avalanche energy capability ● High-speed 4.2±0.2 7.5±0.2 RDS on , high-speed switching characteristic • Applications ø3.1±0.1 switching (switching mode regulator, AC adaptor)


    Original
    2SK1611 PDF

    Contextual Info: Power F-MOS FETs 2SK1614 Silicon N-Channel Power F-MOS FET • Features ● High avalanche energy capacity ● VGSS: 30V guaranteed ● Low RDS on , high-speed switching characteristic 15.0±0.5 ■ Applications 13.0±0.5 4.0±0.1 4.5±0.2 900 V VGSS ±30


    Original
    2SK1614 PDF

    Hitachi DSA00276

    Contextual Info: 2SK1618 L , 2SK1618(S) Silicon N-Channel MOS FET ADE-208-1297 (Z) 1st. Edition Mar. 2001 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter


    Original
    2SK1618 ADE-208-1297 D-85622 Hitachi DSA00276 PDF

    2SK1610

    Abstract: SC-65 M-J58 2sk16
    Contextual Info: Power F-MOS FETs 2SK1610 Silicon N-Channel Power F-MOS FET • Features ● High avalanche energy capacity ● VGSS: 30V guaranteed ● Low RDS on , high-speed switching characteristic M Di ain sc te on na tin nc ue e/ d unit: mm 4.0±0.1 V Pulse IDP ±13


    Original
    2SK1610 2SK1610 SC-65 M-J58 2sk16 PDF