2SD1269 Search Results

2SB944

Abstract: 2SD1269
Contextual Info: JMnic Product Specification 2SB944 Silicon PNP Power Transistors DESCRIPTION ・With TO-220Fa package ・Large collector current IC ・Low collector saturation voltage ・Complement to type 2SD1269 APPLICATIONS ・For power switching applications PINNING PIN

2SB0944

Abstract: 2SD1269
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1269 Silicon NPN epitaxial planar type For power switching Complementary to 2SB0944 4.2±0.2 M Di ain sc te on na tin nc ue e/ d Parameter Collector-emitter voltage (Base open)

2SD1267

Abstract: 2SD1267A 2SD1268 2SD1270 2SD1271 2SD1271A 2SD1272 2SD1273 2SD1273A 2SD1274
Contextual Info: - 242 - Ta=25<C, *EP(äTc=25<C s ít 2SD1267 2SD1267A 2SD1268 2SD1269 2SD1270 2SD1271 2SD1271A 2SD1272 2SD1273 2SD1273A 2SD1274 2SD1274A 2SD1274B 2SD1275 2SD1275A 2SD1276 2SD1276A 2SD1277 2SD1277A 2SD1279 2SD1280 2SD1286 2SD1286-Z 2SD1288 2SD1289 2SD1290

2SB0944

Abstract: 2SB944 2SD1269
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0944 (2SB944) Silicon PNP epitaxial planar type For power switching Complementary to 2SD1269 4.2±0.2 M Di ain sc te on na tin nc ue e/ d Parameter Collector-emitter voltage (Base open)

2SB0944

Abstract: 2SB944 2SD1269
Contextual Info: Power Transistors 2SB0944 2SB944 Silicon PNP epitaxial planar type For power switching Complementary to 2SD1269 Unit: mm ● • 0.7±0.1 Absolute Maximum Ratings (TC=25˚C) Parameter Symbol Ratings Unit Collector to base voltage VCBO –130 V Collector to emitter voltage

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1269 Silicon NPN epitaxial planar type For power switching Complementary to 2SB0944 14.0±0.5 Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 130 V

Contextual Info: 2SD1269 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)130 I(C) Max. (A)4 Absolute Max. Power Diss. (W)2 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)10u @V(CBO) (V) (Test Condition)100 V(CE)sat Max. (V).5 @I(C) (A) (Test Condition)3

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0944 (2SB944) Silicon PNP epitaxial planar type For power switching Complementary to 2SD1269 Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO −130

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1269 Silicon NPN epitaxial planar type For power switching Complementary to 2SB0944 • Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit Collector-base voltage (Emitter open)

2SB0944

Abstract: 2SB944 2SD1269
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0944 (2SB944) Silicon PNP epitaxial planar type For power switching Complementary to 2SD1269 4.2±0.2 M Di ain sc te on na tin nc ue e/ d Parameter Collector-emitter voltage (Base open)

2SD1269

Abstract: 2SB0944 2SB944
Contextual Info: Power Transistors 2SD1269 Silicon NPN epitaxial planar type For power switching Complementary to 2SB0944 2SB944 Unit: mm ● 0.7±0.1 • Absolute Maximum Ratings (TC=25˚C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 130 V Collector to emitter voltage

2SB944

Abstract: 2SD1269
Contextual Info: Power Transistors 2SD1269 Silicon NPN epitaxial planar type For power switching Complementary to 2SB944 Unit: mm ● 0.7±0.1 • Absolute Maximum Ratings TC=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO 130 V Collector to emitter voltage

Contextual Info: Power T ransistors 2S D Ì269 2SD1269 Silicon NPN Epitaxial Planar Type • P a ck a ge D im ension s Unit ! mm 4.4max. 10.2max. P o w e r S w itch ing C o m p le m e n ta ry P a ir with 2SB944 5.7max. ■ F e a tu re s • • • • 2.9max. Low collector-emitter saturation voltage V ce (»>«

2SB944

Abstract: 2SD12 2SD1269
Contextual Info: Power Transistors 2SD1269 2SD 1269 Silicon N P N Epitaxial P lanar Type • P ackage Dim ensions Pow er Switching C om plem entary Pair with 2 S B 9 4 4 ■ Features • Low co llector-em itter satu ration voltag e • G ood linearity of D C cu rren t gain

2SB0944

Abstract: 2SD1269
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1269 Silicon NPN epitaxial planar type For power switching Complementary to 2SB0944 4.2±0.2 M Di ain sc te on na tin nc ue e/ d Parameter Collector-emitter voltage (Base open)

Contextual Info: 2SB944 Pow er Transistors 2SB944 Silicon PNP Epitaxial Planar Type Package Dimensions Power Switching Complementary Pair with 2SD1269 •Features • • • • Unit ! mm 4.4max. 2.9max J0.2max. 5.7tnax. Low collector-emitter saturation voltage VcEisa»

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0944 (2SB944) Silicon PNP epitaxial planar type For power switching Complementary to 2SD1269 Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO −130

2SB944

Abstract: 2SD1269
Contextual Info: Power Transistors 2SB944 Silicon PNP epitaxial planar type For power switching Complementary to 2SD1269 Unit: mm ● 0.7±0.1 • Absolute Maximum Ratings TC=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO –130 V Collector to emitter voltage

2SB0944

Abstract: 2SD1269
Contextual Info: Power Transistors 2SD1269 Silicon NPN epitaxial planar type For power switching Complementary to 2SB0944 • Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit Collector-base voltage Emitter open VCBO 130 V Collector-emitter voltage (Base open)

2SB944

Abstract: 2SD1269
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB944 DESCRIPTION •Low Collector Saturation Voltage : VCE sat = -0.5V(Max)@ IC= -3A ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -80V (Min) ·Good Linearity of hFE ·Complement to Type 2SD1269

2SB944

Abstract: 2SD1269
Contextual Info: SavantIC Semiconductor Product Specification 2SB944 Silicon PNP Power Transistors DESCRIPTION •With TO-220Fa package ·Large collector current IC ·Low collector saturation voltage ·Complement to type 2SD1269 APPLICATIONS ·For power switching applications

2SB944

Abstract: 2SD1269
Contextual Info: Inchange Semiconductor Product Specification 2SB944 Silicon PNP Power Transistors DESCRIPTION ・With TO-220Fa package ・Large collector current IC ・Low collector saturation voltage ・Complement to type 2SD1269 APPLICATIONS ・For power switching applications

2SB0944

Abstract: 2SB944 2SD1269
Contextual Info: Power Transistors 2SB0944 2SB944 Silicon PNP epitaxial planar type For power switching Complementary to 2SD1269 Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO −130 V Collector-emitter voltage (Base open) VCEO −80 V Emitter-base voltage (Collector open)

2SD1539

Abstract: d53 pnp transistor 2SC4714 2sa137 2sb1071 2SA1375 2SA1605 2SA1817 2SC2258 2SC2923
Contextual Info: Transistors Selection Guide by Applications and Functions TO-126 (D523K, D53) U Type (D41) V ceo MT2L Type MT3 Type MT4 Type (D44) (D45) (D46) TO-202 (D54) T0-220(a) (D56) TO-220F (D59) (V) 2SA1605 2SC3063 2SC2923 2SC4714 Chroma input V < n (V) lc (A) -0 .0 5