2SD1280 Search Results

Contextual Info: SMD Type Product specification 2SD1280 Features Low collector-emitter saturation voltage VCE sat . Satisfactory operation performances at high efficiency with the lowvoltage power supply. Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage

2SD1280

Contextual Info: Transistor 2SD1280 Silicon NPN epitaxial planer type For low-voltage type medium output power amplification Unit: mm 4.5±0.1 ● 1 2 0.5±0.08 3 0.4±0.08 1.5±0.1 2.5±0.1 Low collector to emitter saturation voltage VCE sat . Satisfactory operation performances at high efficiency with the

2SB0956

Abstract: 2SD1280
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB0956 Silicon PNP epitaxial planar type Unit: mm For low-frequency output amplification Complementary to 2SD1280 4.5±0.1 1.6±0.2 1 0.4±0.08 1.5±0.1 Rating Unit VCBO −20 V Collector-emitter voltage (Base open)

2SD1267

Abstract: 2SD1267A 2SD1268 2SD1270 2SD1271 2SD1271A 2SD1272 2SD1273 2SD1273A 2SD1274
Contextual Info: - 242 - Ta=25<C, *EP(äTc=25<C s ít 2SD1267 2SD1267A 2SD1268 2SD1269 2SD1270 2SD1271 2SD1271A 2SD1272 2SD1273 2SD1273A 2SD1274 2SD1274A 2SD1274B 2SD1275 2SD1275A 2SD1276 2SD1276A 2SD1277 2SD1277A 2SD1279 2SD1280 2SD1286 2SD1286-Z 2SD1288 2SD1289 2SD1290

2SB0956

Abstract: 2SB956 2SD1280
Contextual Info: Transistor 2SB0956 2SB956 Silicon PNP epitaxial planer type For low-frequency power amplification Complementary to 2SD1280 Unit: mm 4.5±0.1 1.6±0.2 * 1.5±0.1 2.5±0.1 0.4±0.04 3° (Ta=25˚C) Parameter Symbol Ratings Unit Collector to base voltage VCBO

2SD1280

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1280 Silicon NPN epitaxial planar type For low-voltage type medium output power amplification Unit: mm 4.5±0.1 1.6±0.2 3 2 0.5±0.08 1.5±0.1 1.0+0.1 –0.2 1 0.4±0.08 3˚ M Di ain

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1280 Silicon NPN epitaxial planar type For low-voltage type medium output power amplification Unit: mm 4.5±0.1 1.6±0.2 3 2 0.5±0.08 1.5±0.1 1.0+0.1 –0.2 1 0.4±0.08 3˚ 4.0+0.25

2SB0956

Abstract: 2SD1280
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB0956 Silicon PNP epitaxial planar type Unit: mm For low-frequency output amplification Complementary to 2SD1280 4.5±0.1 1.6±0.2 1 0.4±0.08 1.5±0.1 Unit −20 V Collector-emitter voltage (Base open)

2SD1280G

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1280G Silicon NPN epitaxial planar type M Di ain sc te on na tin nc ue e/ d For low-voltage type medium output power amplification • Package • Low collector-emitter saturation voltage VCE(sat)

2SB0956G

Abstract: 2SD1280G
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB0956G Silicon PNP epitaxial planar type M Di ain sc te on na tin nc ue e/ d For low-frequency output amplification Complementary to 2SD1280G ue pl d in an c se ed lud pl vi an m m es

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB0956G Silicon PNP epitaxial planar type M Di ain sc te on na tin nc ue e/ d For low-frequency output amplification Complementary to 2SD1280G • Package ■ Features ■ Absolute Maximum Ratings Ta = 25°C

2SD1280

Contextual Info: Transistors SMD Type Silicon NPN Epitaxial Planar Type 2SD1280 Features Low collector-emitter saturation voltage VCE sat . Satisfactory operation performances at high efficiency with the lowvoltage power supply. Absolute Maximum Ratings Ta = 25 Symbol Rating

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1280G Silicon NPN epitaxial planar type For low-voltage type medium output power amplification • Features ■ Package • Low collector-emitter saturation voltage VCE(sat) • Satisfactory operation performances at high efficiency with the lowvoltage power supply.

Contextual Info: Transistor 2SD1280 Silicon NPN epitaxial planar type For low-voltage type medium output power amplification Unit: mm 4.5±0.1 ● 3 2 0.5±0.08 1 0.4±0.08 1.5±0.1 2.5±0.1 Low collector to emitter saturation voltage VCE sat . Satisfactory operation performances at high efficiency with the

2SD1280

Contextual Info: Transistor 2SD1280 Silicon NPN epitaxial planer type For low-voltage type medium output power amplification Unit: mm 2.5±0.1 +0.25 0.4max. 0.4±0.08 4.0–0.20 45° +0.1 ● Low collector to emitter saturation voltage VCE sat . Satisfactory operation performances at high efficiency with the

2SD1280G

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1280G Silicon NPN epitaxial planar type For low-voltage type medium output power amplification • Package • Low collector-emitter saturation voltage VCE(sat) • Satisfactory operation performances at high efficiency with the lowvoltage power supply.

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1280 Silicon NPN epitaxial planar type For low-voltage type medium output power amplification Unit: mm 4.5±0.1 1.6±0.2 2.5±0.1 0.4±0.04 di p Pl lan nclu ea e se pla m d m des

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB0956 Silicon PNP epitaxial planar type Unit: mm For low-frequency output amplification Complementary to 2SD1280 4.5±0.1 1.6±0.2 1 1.5±0.1 Parameter Symbol Rating Unit VCBO −20

2SD1280

Contextual Info: Transistor 2SD1280 Silicon NPN epitaxial planer type For low-voltage type medium output power amplification Unit: mm 2.5±0.1 +0.25 0.4max. 0.4±0.08 4.0–0.20 45° +0.1 ● Low collector to emitter saturation voltage VCE sat . Satisfactory operation performances at high efficiency with the

2SD1280

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1280 Silicon NPN epitaxial planar type For low-voltage type medium output power amplification Unit: mm 4.5±0.1 3 2 0.5±0.08 1.5±0.1 2.5±0.1 1.0+0.1 –0.2 1 0.4±0.08 3˚ ue

IC 4020

Abstract: 2SB956 2SD1280 DSA003717
Contextual Info: Transistor 2SB956 Silicon PNP epitaxial planer type For low-frequency power amplification Complementary to 2SD1280 Unit: mm • Absolute Maximum Ratings * +0.25 0.4max. 0.4±0.08 4.0–0.20 45° +0.1 ● Large collector power dissipation PC. Low collector to emitter saturation voltage VCE sat .

2SB0956

Abstract: 2SB956 2SD1280
Contextual Info: Transistor 2SB0956 2SB956 Silicon PNP epitaxial planer type For low-frequency power amplification Complementary to 2SD1280 Unit: mm • Absolute Maximum Ratings * 0.5±0.08 1.5±0.1 (Ta=25˚C) +0.25 0.4max. 0.4±0.08 4.0–0.20 45° +0.1 ● Large collector power dissipation PC.

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1280G Silicon NPN epitaxial planar type For low-voltage type medium output power amplification • Package • Low collector-emitter saturation voltage VCE(sat) • Satisfactory operation performances at high efficiency with the lowvoltage power supply.

2SD1280

Contextual Info: Transistors 2SD1280 Silicon NPN epitaxial planar type For low-voltage type medium output power amplification Unit: mm 4.5±0.1 1.6±0.2 3 2 0.5±0.08 1.5±0.1 1.0+0.1 –0.2 1 0.4±0.08 3˚ 4.0+0.25 –0.20 • Low collector-emitter saturation voltage VCE sat