2SD199 Search Results

Contextual Info: O rd e rin g n u m b e r : EN 3 1 7 5 2SB1325/2SD1999 No.3175 S A \Y O PNP/NPN Epitaxial Planar Silicon Transistors i Compact Motor Driver Applications F e a tu re s • Low saturation voltage •Contains diode between collector and em itter • Contains bias resistance between base and em itter

2SD1990

Abstract: IC003
Contextual Info: 2SD1990 Power Transistors 2SD1990 Silicon NPN Triple-Diffused Planar Type Power Switching Package Dimensions U n it ! m m • Features • High speed switching • Good linearity of DC current gain I ì f e • Large collector power dissipation (Pc) ,10.5 + 0.5

2SB1325

Abstract: 2SD1999
Contextual Info: Ordering number : ENN3175A 2SB1325 / 2SD1999 PNP / NPN Epitaxial Planar Transistors 2SB1325 / 2SD1999 Compact Motor Driver Applications Features • • • • Low saturation voltage. Contains diode between collector and emitter. Contains bias resistance between base and emitter.

2SB1324

Abstract: 2SD1998
Contextual Info: Ordering number:EN3130 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1324/2SD1998 Compact Motor Driver Applications Features Package Dimensions • Low saturation voltage. · Contains diode between collector and emitter. · Contains bias resistance between collector and

2SB1323

Abstract: 2SD1997
Contextual Info: Ordering number:EN3129 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1323/2SD1997 Compact Motor Driver Applications Features Package Dimensions • Contains input resistance R1 , base-to-emitter resistance (RBE). · Contains diode between collector and emitter.

LLO14

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1322 Silicon PNP epitaxial planar type For low frequency power amplification Complementary to 2SD1994 • Package M Di ain sc te on na tin nc ue e/ d  Features  Allowing supply with the radial taping

2sb132

Abstract: 2A marking 2SB1324 2SD1998 ITR09586 ITR09587 ITR09588
Contextual Info: 2SB1324 / 2SD1998 Ordering number : EN3130A SANYO Semiconductors DATA SHEET 2SB1324 / 2SD1998 PNP / NPN Epitaxial Planar Silicon Transistors Compact Motor Driver Applications Features • • • • • Low saturation voltage. Contains diode between collector and emitter.

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1996 Silicon NPN epitaxial planar type For low-voltage output amplification For muting For DC-DC converter Unit: mm 6.9±0.1 (4.0) (0.7) 2.5±0.1 (0.8) • Low collector-emitter saturation voltage VCE(sat)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1321A Silicon PNP epitaxial planar type For low-frequency output amplification and driver amplification Complementary to 2SD1992A Unit: mm 6.9±0.1 (4.0) 2.5±0.1 (0.8) • Features

2SD1995

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1995 Silicon NPN epitaxial planar type For low-frequency and low-noise amplification Unit: mm 6.9±0.1 (4.0) (0.7) 2.5±0.1 (0.8) • High forward current transfer ratio hFE • Low collector-emitter saturation voltage VCE(sat)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1994A Silicon NPN epitaxial planar type For low-frequency power strengthening and drive Complementary to 2SB1322A Unit: mm 6.9±0.1 4.0 2.5±0.1 (0.8) • Features • Low collector-emitter saturation voltage VCE(sat)

2SB1321A

Abstract: 2SD1992A
Contextual Info: Transistor 2SB1321A Silicon PNP epitaxial planer type For low-frequency output amplification and driver amplification Complementary to 2SD1992A Unit: mm 0.15 ● Allowing supply with the radial taping. Large collector power dissipation PC. 600mW 1.0 ●

transistor 2sd1996

Abstract: 2SD1996
Contextual Info: Transistor 2SD1996 Silicon NPN epitaxial planer type Unit: mm 6.9±0.1 1.05 2.5±0.1 1.45 ±0.05 0.8 4.0 0.8 0.15 0.7 ● 0.85 +0.1 0.45–0.05 2.5±0.5 2.5±0.5 +0.1 ● 14.5±0.5 ● 0.65 max. Low collector to emitter saturation voltage VCE(sat). Low ON resistance Ron.

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1322A Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SD1994A Unit: mm 6.9±0.1 4.0 2.5±0.1 (0.8) • Features • Allowing supply with the radial taping

2sb1322

Contextual Info: Transistor 2SB1322A Silicon PNP epitaxial planer type For low-frequency power amplification Complementary to 2SD1994A Unit: mm 1.05 2.5±0.1 ±0.05 0.15 6.9±0.1 0.7 4.0 0.8 1.0 1.0 0.2 Allowing supply with the radial taping. 0.5 4.5±0.1 • Features ●

Contextual Info: Transistors IC SMD Type Product specification 2SD1997 Features Contains diode between collector and emitter. Low saturation voltage. Large current capacity. Small-sized package making it easy to provide highdensity, small-sized hybrid ICs. Absolute Maximum Ratings Ta = 25

Contextual Info: 2SD1994A NPN Transistor Elektronische Bauelemente Plastic-Encapsulate Transistor RoHS Compliant Product TO-92 A suffix of "-C" specifies halogen & lead-free 3.5 ±0.2 4.55±0.2 4.5±0.2 Features * Allowing Supply With The Radial Taping 14.3 ±0.2 * Low collector-Emitter Saturation Voltage VCE SAT

smd ic marking 1A

Abstract: 2SD1997 MARKING SMD npn TRANSISTOR 1a
Contextual Info: Transistors SMD Type NPN Epitaxial Planar Silicon Transistor 2SD1997 Features Contains diode between collector and emitter. Low saturation voltage. Large current capacity. Small-sized package making it easy to provide highdensity, small-sized hybrid ICs. Absolute Maximum Ratings Ta = 25

smd transistor MARKING 2A npn

Abstract: TRANSISTOR MARKING DM npn smd 2a smd diode marking 2a TRANSISTOR MARKING DM W SMD TRANSISTOR MARKING 2v 2SD1998 NPN MARKING 2A transistor marking 2a MARKING DM
Contextual Info: Transistors SMD Type NPN Epitaxial Planar Silicon Transistor 2SD1998 Features Low saturation voltage. Contains diode between collector and emitter. Contains bias resistance between collector and emitter. Large current capacity. Small-sized package making it easy to provide highdensity,

2SD1994

Abstract: 2SB1322 2SB1322A 2SD1994A
Contextual Info: Panasonic 2SB1322, 2SB1322A -> [J = 1 > P N P I f ÿ d f > 7 ’ J U 7 ‘ U 2SD1994, 2SD1994A ¿ =1 >7°U • # - i ' J f i U Ä • 2SD1994, 2SD1994A t =1 y -f' ¿ ^ 7 0 • ÿ'Jr^T- ■ Ta=25°C) ; Item n V9 9 * 3 1 / ^ - Unit -3 0 2SB1322 V cbo 2SB1322A

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1321A Silicon PNP epitaxial planar type For low-frequency output amplification and driver amplification Complementary to 2SD1992A Unit: mm 6.9±0.1 (4.0) 2.5±0.1 (0.8) • Features

2SD1993

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1993 Silicon NPN epitaxial planar type For low-frequency and low-noise amplification Unit: mm 6.9±0.1 (4.0) (0.7) 2.5±0.1 (0.8) • Low noise voltage NV • High forward current transfer ratio hFE

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1991A Silicon NPN epitaxial planar type For general amplification Complementary to 2SB1320A Unit: mm 6.9±0.1 (4.0) 2.5±0.1 (0.8) • Features • High forward current transfer ratio hFE

2SD1993

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1993 Silicon NPN epitaxial planar type For low-frequency and low-noise amplification Unit: mm 6.9±0.1 (4.0) (0.7) 2.5±0.1 (0.8) • Low noise voltage NV • High forward current transfer ratio hFE