2SK1045
Abstract: 2SK1048 2SK1050 2SK1044 2SD2791 2SK1011 2sd2498 2SD299 2SD300 2SD373
Text: STI Type: 2SC642A Notes: Polarity: NPN Power Dissipation: 50 VCEV: VCEO: 800 ICEV: ICEV A: hFE: 30 hFE A: 150m VCE: VBE: IC: COB: fT: 2.0 Case Style: TO-204AA/TO-3: Industry Type: 2SC642A STI Type: 2SC643 Notes: Polarity: NPN Power Dissipation: 50 VCEV: VCEO: 1100
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Original
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PDF
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2SC642A
O-204AA/TO-3:
2SC643
2N4030DIE
2C4030
2SC643A
2SK1045
2SK1048
2SK1050
2SK1044
2SD2791
2SK1011
2sd2498
2SD299
2SD300
2SD373
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2SK2079-01M
Abstract: 2SK2079 2SK2001-01M 2SK1549 2SK900 2SK901 2SK902 2SK905 2SK906 2SK947M
Text: MOSFETs F-l Series Low RdS ON 50 - 900 Volts Device Type 2SK905 2SK906 2SK900 2SK947M 2SK901 2SK1549 2SK902 2SK949M 2SK950 2SK724 2SK725 2SK899 2SK897M 2SK903M 2SK904 2SK1105 2SK1663 2SK1384 2SK955 2SK960M 2SK961 Miiximum Ratin as I d (A) V d s s (V ) 45
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OCR Scan
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PDF
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2SK905
2SK906
2SK900
T0220
2SK947M
T0220F15
2SK901
2SK1549
T03PF
2SK902
2SK2079-01M
2SK2079
2SK2001-01M
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K1105
Abstract: No abstract text available
Text: 2SK1105-R FUJI P O W E R M O S-FE T N-CHANNEL SILICON POWER MOS-FET F - I S E R I E S • Outline Drawings ■ Features • High speed switching • Low on-resistance • No secondary breakdown • Low driving power • High voltage ■Applications • Switching regulators
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OCR Scan
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PDF
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2SK1105-R
GaTg30
K1105
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2SK2079
Abstract: 2SK2079-01M
Text: S MOSFETs F-l Series Low Rds (ON 50 - 900 Volts Device Type 2SK905 2SK906 2SK900 2SK947M 2SK901 2SK1549 2SK902 2SK949M 2SK950 2SK724 2SK725 2SK899 2SK897M 2SK903M 2SK904 2SK1105 2SK1663 2SK1384 2SK955 2SK960M 2SK961 Maximum Ratinas Id (A) V dss (V) Pd (W)
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OCR Scan
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PDF
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2SK905
2SK906
2SK900
2SK947M
2SK901
2SK1549
2SK902
2SK949M
2SK950
2SK724
2SK2079
2SK2079-01M
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2SK725
Abstract: 2sk899 2SK960 90-340 K949 2SK900 2SK903MR k902 k952 2SK1549R
Text: <S MOSFETs F-l Series - Low R d s ON 50 - 800 Volts Device Type 2SK905 2SK906 2SK900 2SK947MR 2SK901 2SK1549R 2SK9Ò2 2SK949MR 2SK950 2SK724 2SK725 2SK899 2SK897MR 2SK903MR 2SK904 2SK1105R 2SK1663L.S 2ÔK1384R 2SK955 2SK960MR 2SK961 Miaximum Ratifias V dss (V)
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OCR Scan
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PDF
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2SK905
2SK906
2SK900
T0-220
2SK947MR
T0-220F15
2SK901
2SK1549R
K949MR
O-220F15
2SK725
2sk899
2SK960
90-340
K949
2SK903MR
k902
k952
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sk1212
Abstract: 2SK1549R 2SK724 2SK900 2SK901 2SK905 2SK906 2SK947MR 2SK950
Text: <S MOSFETs F-l Series - Low R d s ON 50 - 800 Volts Miiximum Ralinas Device Type V dss (V) 2SK905 2SK906 2SK900 2SK947MR 2SK901 2SK1540ft 2ÔK902 2SK949MR 2SK950 2SK724 2SK725 2SK899 2SK897MR 2SK903MR 2SK904 2SK1105R 2SK1663L.S 2ÔK1384R 2'3K055 2SK960MR
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OCR Scan
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PDF
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2SK905
2SK906
2SK900
T0-220
2SK947MR
T0-220F15
2SK901
2SK1549R
K949MR
O-220F15
sk1212
2SK724
2SK950
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2Sk955
Abstract: 2SK725 K949 2sk899 2SK960 EE35 2SK903-MR 2SK900 2SK903MR 2SK901
Text: MOSFETs F-l Series - Low R d s ON 50 - 800 Volts Device Type 2SK905 2SK906 2SK900 2SK947MR 2SK901 2SK1549R ¿Sk902 2ÔK949MR 2SK950 2SK724 2SK725 2SK899 2SK897MR 2SK903MR 2SK904 2SK1105R 2SK1663L.S 2SK1384R 2SK955 2SK960MR 2SK961 Mi iximum Ratinas P d (W)
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OCR Scan
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PDF
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2SK905
2SK906
2SK900
T0-220
2SK947MR
O-220F15
2SK901
2SK1549R
Sk902
K949MR
2Sk955
2SK725
K949
2sk899
2SK960
EE35
2SK903-MR
2SK903MR
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2sk2079
Abstract: 2SK2079-01M 2SK2001
Text: MOSFETs F-l Series Low R d S ON 50 - 900 Volts Device Type 2SK905 2SK906 2SK900 2SK947M 2SK901 2SK1549 2SK902 2SK949M 2SK950 2SK724 2SK725 2SK899 2SK897M 2SK903M 2SK904 2SK1105 2SK1663 2SK1384 2SK955 2SK960M 2SK961 Miìximum Ratinas V d s s (V) Id (A) 45
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OCR Scan
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PDF
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2SK905
2SK906
2SK900
2SK947M
2SK901
2SK1549
2SK902
2SK949M
2SK950
2SK724
2sk2079
2SK2079-01M
2SK2001
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2sk2079
Abstract: 2SK955 2SK2079-01M 2SK727-01 2SK727 2SK899 2SK961 2SK900 2SK1549 2SK901
Text: MOSFETs F-l Series Low RdS ON 50 - 900 Volts Device Type 2SK905 2SK906 2SK900 2SK947M 2SK901 2SK1549 2SK902 2SK949M 2SK950 2SK724 2SK725 2SK899 2SK897M 2SK903M 2SK904 2SK1105 2SK1663 2SK1384 2SK955 2SK960M 2SK961 Miiximum Ratin as I d (A) V d s s (V ) 45
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OCR Scan
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PDF
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2SK905
2SK906
2SK900
T0220
2SK947M
T0220F15
2SK901
2SK1549
T03PF
2SK902
2sk2079
2SK955
2SK2079-01M
2SK727-01
2SK727
2SK899
2SK961
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1105R
Abstract: 2SK1105-R TFMt 2SK1105 2sk mosfet
Text: 2SK1105-R FUJI POWER MOS-FET N-C HANNEL SILICON POWER MOS-FET F -I S E R I E S lOutline Drawings • Features • High speed switching • Low on-resistance • N o secondary breakdown • Low driving power • High voltage ■Applications • Switching regulators
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OCR Scan
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PDF
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2SK1105-R
1105R
2SK1105-R
TFMt
2SK1105
2sk mosfet
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2SK1171
Abstract: 900 v 9 amp mosfet 2SK1015 2SK726 2SK1511 2SK1222 j545 2SK1018 2SK9 2SK151
Text: COLLMER SEMI CO NDUC TO R INC 34E » . • 25307^2 Ü001SS7 1 « C O L " T '' 3>°\ - 3 IIU JM M S O E Power MOSFET Advantages: . F-l Series . F-ll Series Low RDS (on V G S + /- 30V Reduced turn off time High avalanced ruggedness VG S + /- 30V, Reduced turn
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OCR Scan
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PDF
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001SS7
25-35kg
2SK1171
900 v 9 amp mosfet
2SK1015
2SK726
2SK1511
2SK1222
j545
2SK1018
2SK9
2SK151
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2SK100
Abstract: 2SK2765 2SK2029-01LS 2sk1936 2SK1940 2sk2761 2SK196 2SK2082 2SK1082 2SK182
Text: MOSFET QUICK REFERENCE GUIDE -30V to 450V BY PACKAGE TYPE F-l: P A G E 11 FA P-IIA : FA P-I: P A G E 11 FA P-IIS : F-ll: P A G E 11 F-lll: FA P-II: P A G E 12 SU R FA C E MOUNT FA P-III: P A G E 15 FA P-IIIA A U TO : P A G E 16 FA P-IIIB : P A G E 16 F-V:
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OCR Scan
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PDF
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T0-220
T0-220F15
2SJ472-01L
2SJ314-01L
2SJ473-01L
2SK2248-01L
2SK1942-01
2SK2770-01
2SK2528-01
2SK1944-01
2SK100
2SK2765
2SK2029-01LS
2sk1936
2SK1940
2sk2761
2SK196
2SK2082
2SK1082
2SK182
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2SK056
Abstract: No abstract text available
Text: MOSFETs F-l Series - Low Rds ON 50 - 800 Volts Device Type 2SK905 2SK906 2SK900 2SK947M R 2SK901 i;-: tJdiruAin RSBr V dss (V ) MA) P d (W ) Qss(pt) Coss(pf) ton (ns) toff (ns) 50 100 250 250 250 45 32 12 12 20 125 125 80 40 125 0.03 0.06 0.30 0.30 0.15 3000
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OCR Scan
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PDF
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2SK905
2SK906
2SK900
2SK947M
2SK901
2SK950
2SK724
2SK725
2SK899
2SK897M
2SK056
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2sk1005
Abstract: T0-220F T0220F 2sk1010 2SK1011 2sk1217 2SK1105 2SK956 2SK1084 2sk1101
Text: COLLMER SEMICONDUCT OR INC 34E » . • 25307^2 Ü001SS7 1 ■ COL "’’’P 3>°\ - 3 @U>(MsffO§OE Power MOSFET Advantages: • F-l Series • F-ll Series Low RDS (on V G S + /- 30V Reduced turn off time High avalanced ruggedness V G S + /- 30V, Reduced turn
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OCR Scan
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PDF
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001SS7
CT03P
t-39-13
2MI50F-050
2MI50S-050
2MI100F-025
2MI100F-050
2MI200F-025
6MI15FS-050
6MI20FS-025
2sk1005
T0-220F
T0220F
2sk1010
2SK1011
2sk1217
2SK1105
2SK956
2SK1084
2sk1101
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ET412
Abstract: 2SK1217 2SK2850 ESAB92M-02N 2SK2879 2SK2765 2SK2645 2SK1916 2sk2645 MOSFET 2sk1082
Text: / Discontinued Types 9. S! Descciptien / ' f ' 7 - MOSFET Power MOFET O w c o n t& n je d ty p e ItW B S W P Â R e p la c a d typ e 2SK1009 2SK1010 2SK1011 2SK1012 2SK1015 2SK2871 2SK2875 2SK2639 2SK2641 2SK2755 2SK1016 2SK1023 2SK1024 2SK1082 2SK2643 2SK2646
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OCR Scan
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PDF
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2SB1532
2SC3821
2SC3822
2SC3865
2SC3886
2SC4383
2SC4507
2SC4508
2SD1726
2SD1740
ET412
2SK1217
2SK2850
ESAB92M-02N
2SK2879
2SK2765
2SK2645
2SK1916
2sk2645 MOSFET
2sk1082
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2SK1212
Abstract: 2sk904 replacement
Text: <5 MOSFETs F-l Series - Low R d s ON 50 - 900 Volts Device Type 2SK905 2SK906 2SK900 2SK947MR 2SK901 2SK1549R 2SK902 2SK949MR 2SK950 2SK724 *2SK725 2SK899 2SK897MR '2SK903MR *2SK904 •2SK1105R *2SK1663L,S •2SK1384R •2SK955 2SK960MR 2SK961 Maximum Ratinas
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OCR Scan
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PDF
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2SK905
2SK906
2SK900
2SK947MR
2SK901
2SK1549R
2SK902
2SK949MR
2SK950
2SK724
2SK1212
2sk904 replacement
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2SK1143
Abstract: 2SK1142 2SK1117 2SK1139 2SK1121 2SK1138 2SK1118 2SK1136 2sk1114 2SK1105
Text: r. . . . m *t £ £ m ÌÈ Í Í t H ^ fë aË 2 P d /P c h «1 £ Hf m f* V * 2SKU05 -M tn m SW-Reg, UPS, DDC MOS N E 800 DSS 2SK1108 NEC C-MIC, Imp-C J N D 20 DSX 2SK1109 NEC (V) » * ±20 S (A) & 3 D (W) lass (max) (A) 80 ±100n 10m G 100m fà % (min) (max) Vds
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OCR Scan
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PDF
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2SK1105
2SK1108
2SK1109
2SKU12
2SK1113
170ns.
550nstyp
VDD-30V
2SK1134
155ns,
2SK1143
2SK1142
2SK1117
2SK1139
2SK1121
2SK1138
2SK1118
2SK1136
2sk1114
2SK1105
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T03P
Abstract: 2SK101
Text: COLLNER SE MICONDUCTOR INC b3E D • 22307^2 00D1A70 b05 « C O L <§ MOSFETs F-l Series Low R d s ON 50-900 Volts Device TvDe 2SK1134 2SK905 2SK905A 2SK2000A 2SK906 2SK906A 2SK900 2SK947M 2SK948 2SK901 2SK1549 2SK902 2SK901A 2SK902A 2SK949M 2SK950 2SK723
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OCR Scan
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PDF
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00D1A70
2SK1134
2SK905
2SK905A
2SK2000A
2SK906
2SK906A
2SK900
2SK947M
2SK948
T03P
2SK101
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2SK956
Abstract: 2sk1005 2SK947 2SK1015 2SK948 436s 2SK906A 0 280 130 055 2SK726 2SK900
Text: COLLMER S E M I C O N D U C T O R INC SEBûT'iS ÜÜD1S 7Ô 153 4ñE » MOSFETS ICOL <§ 13 F-l SERIES LOW RDS (on Device Type 2SK905 2SK1134 2SK905A 2SK906 2SK906A 2SK900 2SK947 2SK948 2SK901 2SK902 2SK901A 2SK902A 2SK949 2SK950 2SK723 2SK859 2SK724 2SK1099
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OCR Scan
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PDF
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D1S70
2SK905
2SK1134
T03PF
2SK905A
2SK906
2SK906A
2SK900
T0220
2SK947
2SK956
2sk1005
2SK1015
2SK948
436s
0 280 130 055
2SK726
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2SK726
Abstract: 2SK955 2SK956 2sk94 2SK727 2SK906A 2SK1004 2SK902A 2SK900 2sk1018
Text: COLLMER S E M I C O N D U C T O R INC SEBûT'iS ÜÜD1S 7Ô 153 4ñE » MOSFETS ICOL <§ 13 F-l SERIES LOW RDS (on Device Type 2SK905 2SK1134 2SK905A 2SK906 2SK906A 2SK900 2SK947 2SK948 2SK901 2SK902 2SK901A 2SK902A 2SK949 2SK950 2SK723 2SK859 2SK724 2SK1099
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OCR Scan
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PDF
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D1S70
2SK905
2SK1134
T03PF
2SK905A
2SK906
2SK906A
2SK900
T0220
2SK947
2SK726
2SK955
2SK956
2sk94
2SK727
2SK1004
2SK902A
2sk1018
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523a1
Abstract: 2SK955 2SK956-01 equivalent 2SK956 2sk1018 2sk956 equivalent 2sk1144 2SK1388 2sk725 equivalent 2SK900
Text: COLLMER SEMICONDUCTOR INC 34E S53Û7T2 » Ü001SS7 1 ICOL "T'3P\- 3 PUI1 [lU.IM sO’OSOE Power MOSFET Advantages: • F-l Series • F-ll Series Low RDS (on VGS + /- 30V Reduced turn off time High avalanced ruggedness VGS + /- 30V, Reduced turn off time
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OCR Scan
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PDF
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001SS7
25-35kgÂ
523a1
2SK955
2SK956-01 equivalent
2SK956
2sk1018
2sk956 equivalent
2sk1144
2SK1388
2sk725 equivalent
2SK900
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Untitled
Abstract: No abstract text available
Text: FUJI STUKmrDsoe • F-l SERIES - L o w • FAP-I SERIES - Low R d S ON . High Avalanche Ruggedness • F-ll SERIES - Vgs ± 30V, Reduced Turn-Off Time • FAP-II SERIES - V gs ± 30V, Reduced Turn-Off Time, High Avalanche Ruggedness • FAP-IIA Series - V gs ± 30V, Reduced Turn-Off Time,
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OCR Scan
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PDF
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2SK2770-01
2SK2272-01R
2SK2528-01
2SK1212-01R
2SK1944-01
2SK2653-01R
2SK727-01
2SK1217-01R
2SK1082-01
2SK2655-01R
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k1507
Abstract: K1663 K1507 MOSFET 90t03p 25k956 2SK956 2SK1661 2SK1507 2SK1388 1n05
Text: FUJI G l T L t lC s ï r i jg û E C O L LH ER SEMICONDUCTOR INC MAE D • 5 5 3 6 7 ^ 5 0 Q 0 1 Ô 0 2 DbM « C O L Power MOSFET Advantages: • F-l Series • F-ll Series Low RDS on VGS + /- 30V Reduced turn off time High avalanche ruggedness VGS + /- 30V, Reduced turn
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OCR Scan
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PDF
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T0220F15
K1663
k1507
K1663
K1507 MOSFET
90t03p
25k956
2SK956
2SK1661
2SK1507
2SK1388
1n05
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