2SK1613 Search Results

Contextual Info: 2SK1613 Power F-MOS FETs 2SK1613 Silicon N-Channel Power F-MOS Unit : mm • Features 10.5±0.5 2.0±0.1 ■ Absolute Maximum Ratings Tc = 25˚C Symbol Rating VDSS 900 V Gate-Source voltage VGSS ±30 V DC ID ±5 A Pulse IDP ±10 A EAS * 45 mJ Avalanche energy capability

2SK1613

Abstract: SC-65 2sk16
Contextual Info: Power F-MOS FETs 2SK1613 Silicon N-Channel Power F-MOS FET • Features ● High avalanche energy capacity ● VGSS: 30V guaranteed ● Low RDS on , high-speed switching characteristic 15.0±0.5 ■ Applications 13.0±0.5 V ID Pulse IDP ±5 A ±10 A EAS* Avalanche energy capacity

2SK1613

Contextual Info: Panasonic Power F-MOS FETs 2SK1613 Silicon N-Channel Power F-MOS I Features ►High avalanche energy capability ►V qss : 30V guaranteed ►Low R ds oii , high-speed switching characteristic I Applications ►High-speed switching (switching mode regulator)

2SK1613

Abstract: SC-65 MJ 1502 S
Contextual Info: Power F-MOS FETs 2SK1613 Silicon N-Channel Power F-MOS FET • Features ● High avalanche energy capacity ● VGSS: 30V guaranteed ● Low RDS on , high-speed switching characteristic 15.0±0.5 ■ Applications 13.0±0.5 900 V VGSS ±30 V DC ID ±5 A Pulse

Contextual Info: Power F-MOS FETs 2SK1613 Silicon N-Channel Power F-MOS FET • Features ● High avalanche energy capacity ● VGSS: 30V guaranteed ● Low RDS on , high-speed switching characteristic 15.0±0.5 ■ Applications 13.0±0.5 4.0±0.1 4.5±0.2 900 V VGSS ±30

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

2SK1603

Abstract: 2SK1601 2SK1606 2SK1580 2SK1582 2SK1583 2SK1584 2SK1585 2SK1586 2SK1588
Contextual Info: - 112 - ft f M £ tí: ffl € & m £ A £ 1 % E ft K V * (V) fr fê fr (A) % 3 P d /P c h (max) (A) (W) fö 4# 14 (Ta=25t3) (min) (V) (max) (V) Vd s I gss Vg s (VÏ (min) (A) (max) V d s (A) (V) Id (A) (V) (min) (S) %? Vds (V) 1d (A) 2SK1580 NEC SW MOS

3866S

Abstract: transistor a999 bs 7818 -1995 transistor tt 2206 A999 transistor TT 2206 transistor a1535A 8340UAS transistor 3866S 2SD 4515
Contextual Info: H Integrated Circuits MOS LSIs Page MOS LSI Type No. Page Type No. Page Type No. Page Type No. Page M N 171608 42 A M N 18P73210 43 M N 3210 69 M N 5179/H 91 M N 171609 42 AM N 18P73215 43 M N 3214 69 MN5181 91 M N 3102 69 M N 53 00 0 Series 55 M N 33 00 Series

an6512n

Abstract: mn1225 MN1280 mn6520 MN6130 MN1201A MN6147C MN12C261D MN12C201D MN3107
Contextual Info: <Maintenance Types> This product is not dealt with anymore. Customers dealing with this product conventionally may contact our sales division in the case of ambiguity. <Scrapped Types> Apart from the inquiry concerning repair parts, we will refrain from taking any counteraction.

OF03

Abstract: 2SK1263 2SK2377
Contextual Info: Field Effect Transistors • Power F-MOS FETs Line-up Vgs =10V \ Vdss (V) \ to 60 80 100 150 170 200 250 450 500 550 600 800 900 \ (A) \ 1 A2SK2277 Mini Power 1.0 2SK2014 U Type 10 ★2SK2047 I Type a.o (Id=1.2A) ★2SK1834 220Fro ★2SK1980 N Type 7o ★ A2SK2128

2SC5936

Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Contextual Info: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

ON3105

Abstract: 2sd2603 mn4117405 2sc901b mn6520 MN1280 mn1225 MN6147C 2SC5573 GN2013
Contextual Info: Discontinued Types • Discontinued Types ● MOS LSIs Part No. Alternative Part No. MN1001 MN1020215 MN1020407 MN1020415 MN1020715 MN102LF53G MN1040 MN110 MN1101 MN115 MN115P MN116 MN116P MN1250 MN1250B MN1250BJC MN12510 MN1252 MN1252A MN1252B MN1252B1 MN1252B1S

2sk2324

Abstract: 2SK2124 2SK2127 2sk2323
Contextual Info: Package Package No. 1Type (D44) N Type (D42) MT4 (D41) TO-22C)F(a) TO-220E (D55) (D59) 2SK1605 2SK2123 2SK1606 TOP-3(a) (D60) TOP-3E (D65) 2SK2125 2SK1608 2SK2126 2SK1609 2SK2127 R o S 'ù n ; Id (A) 2SK2032 2SK2571 500 2SK1610 2SK2383 550 2SK2047 max. ( ü )

MN1280

Abstract: AN6512 MN15814 MN15245 2Sb1163a mn158413 AN7210 AN7226 MN15287 MN15283
Contextual Info: pes H Maintenance • mos LS Is Type No. Alternative ^ype No. Alternative Type No. - MN6040Z — - MN6049 — MN3726FE/AE MN4520B/S MN4521 B/S - — MN3726AE MN4522B/S - MN6063 MN6063A - MN4526B/S - MN6064 - - MN4528B/S — - MN4532B/S — MN6064R/S MN61074

2SK2277

Abstract: 2SK2580 220E4 2SK2015 2SK2014
Contextual Info: FET, IGBT, IPD • Power F-MOS FETs Line-up Vgs =10V ÎV dss \ (V) 60 80 100 150 170 250 450 500 550 800 900 (A) \ 1 2SK2277 Mini-Powerl .0 2SK2014 UTypei.O ★2SK2047 I Type b.o (Id =1.2A) 2SK2538 220Fz.o ★2SK1834 220Fro ★2SK1980 N Type 7.0 ★ A2SK2128

K614

Abstract: K 1833 2SK 129 A gn1015 2SK1257 equivalent 2SK1962 2sk 170 Pin GN1021 IC STK411-220E CIRCUIT K996
Contextual Info: Field Effect Trarisistors _ i_ • Silicon Junction FETs Absolute Maximum Ratings Package No. S Mini Type Mini Type (05} Electrical Characteristics (Ta — 25 "C ) (Ta = 25 °C ) Application New S Type TO -92 (D10)

Contextual Info: Package Package No. 1Type (D44) N Type (D42) MT4 (D41) TO-22ÛF(a) (D55) TO-220E (D59) TOP-3(a) (D60) TOP-3F(a) (D63) TOP-3E (D65) TOP-3L (067) V dss (V) V gss (V) 500 ±20 2SK1406 2SK2509 2SK1833 2SK2125 2SK1608 2SK2126 ton typ (ns) 150 140 480 15 0.5 8