2SK657 Search Results

2SK657

Abstract: SC-71
Contextual Info: Silicon MOS FETs Small Signal 2SK657 Silicon N-Channel MOS FET For switching unit: mm 6.9±0.1 2.5±0.1 1.0 1.0 1.5 R0.9 R0.9 0.85 Ratings 50 8 ±100 ±200 400 150 −55 to +150 Symbol VDSS VGSO ID IDP PD Tch Tstg Unit V V mA mA mW °C °C 3 2 2.5 0.45±0.05

2SK0657

Abstract: 2SK657 SC-71
Contextual Info: Silicon MOS FETs Small Signal 2SK0657 (2SK657) Silicon N-Channel MOS FET Unit: mm For switching 2.5±0.1 6.9±0.1 (1.0) 4.1±0.2 2.4±0.2 1.0±0.1 R 0.7 2.0±0.2 ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l ht low disc dis ena ten low

2SK0657

Abstract: 2SK657 SC-71
Contextual Info: Silicon MOS FETs Small Signal 2SK0657 (2SK657) Silicon N-Channel MOS FET Unit: mm For switching 2.5±0.1 6.9±0.1 (1.5) R 0.9 1.0±0.1 2.4±0.2 4.1±0.2 2.0±0.2 R 0.7 4.5±0.1 3.5±0.1 ● High-speed switching ● M type package, allowing easy automatic and manual insertion as

Contextual Info: 2SK657 Silicon MOS FETs Small Signal 2SK657 Silicon N-Channel MOS Unit : mm For switching 6.9±0.1 ing to printed circuits board. 1.0 0.85 4.5±0.1 Easy automatic- /manual-insertion due to M type package. Self-fix- 4.1±0.2 ● 7 High-speed switching 1.0

Contextual Info: Silicon MOS FETs Small Signal 2SK0657 (2SK657) Silicon N-Channel MOS FET Unit: mm For switching 2.5±0.1 6.9±0.1 (1.0) 3.5±0.1 ● High-speed switching ● M type package, allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board.

2SK657

Abstract: 2SK0657 SC-71
Contextual Info: Silicon MOS FETs Small Signal 2SK0657 (2SK657) Silicon N-Channel MOS FET unit: mm For switching 6.9±0.1 1.0 0.85 4.5±0.1 4.1±0.2 1.0±0.1 ● High-speed switching ● M type package, allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board.

2SK653

Abstract: 2SK652 2SK671 Gv-80dB 2SK674 2SK650 2SK669 150ni 2SK677 2SK649
Contextual Info: - 60 - M £ ft ffl € & flt £ f •ç !• 4 1 H 2S K 6 4 8 m X [H# * * V æ fê ft £ * (V) * P d/Pch I gss (W) (max) (A) Vg s (V) ^ (min) (A) (max) (A) Vd s (V) W fî tt ( T a = 2 5 <C ) (min) (V) (max) V d s (V) (V) (min) (S) Id (A) (typ) V d s

2SK1216

Abstract: 3SK139 2SJ364 FETs Field Effect Transistors 3SK268 3SK269 3SK192 2SK1104 2SK374 3SK286
Contextual Info: Field Effect Transistors • Silicon Junction FETs Absolute Maximum Ratings Ta =25 “CÍ Package (No. Application General-use low frequency amplifier SS Mini Type S Mini Type (D1) (D5) 2SJ0385 Mini Type (D10) 2SK198 2SK374 2SK123 Capacitor microphone APreliminary

2sk to-92

Contextual Info: Field Effect Transistors # For Small Signal Absolute Maximum Ratings Ta = 2 5 °C Application Structure Digital/ analog switching Nch Pch Electrical Characteristics (Ta = 2 5 °C) Type No. V ds * V dss (V) V gso Id (V) (A) (mW) 2SK601 80 20 0.5 2SK614 80

2SK620

Abstract: 3SK268 3SK269 2SK1104 3SK286 CAMERA MOS 2SJ0385 2SJ163 2SJ164 2SJ364
Contextual Info: Field Effect Transistors • Silicon Junction FETs Absolute Maximum Ratings Ta=25“C Package (No.) Application Mini Type (D10) SS Mini Type S Mini Type (D 1) General-use low frequency amplifier (D 5) New S Type (D39) 2 SKIIO 3 2SJ0385 2SJ364 2SK662 2SK663

Contextual Info: Field Effect Transistors • Silicon Junction FETs Absolute Maximum Ratings Ta Package (No. Application (D1) General-use low frequency amplifier 2SJ0385 General-use Capacitor microphone Video camera pre-amp. Infrared sensor A2SK2380 APrelim inary Mini Type

2SK2276

Abstract: 2sk227
Contextual Info: FET, IGBT, IPD • Silicon MOS FETs # For Small Signal Absolute Maximum Ratings Ta = 2 5 °C Application Structure Type No. (mW) typ (Q> max typ* (ns) 0.5 1000 *300 2 *15 *20 Mini-Power Type D19 0.5 0.5 750 1000 150 200 *300 *300 2 2 * 15 * 15 20 20 40 40

AN3962FB

Abstract: MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202
Contextual Info: umb Type No. Page MOS L Type No. Page Type No. Page Type No. MN151614 43 MN1882417 45 ▲ MN151630 43 MN1882421 46 MN3204 • MN3200 Series Page Type No. Page MN56000 Series 58 63 MN56020 58 68 • O M N 101C 01A 46 MN152810 43 MN188321 45 MN3205 68 MN56030

SSSMini3-F1 transistor

Abstract: 2SK0664 2sk60 2SK0601 2SK0614 2SK0615 2SK0655 2SK0656 2SK601 2SK614
Contextual Info: FETs, IPD, IGBTs, GaAs MMICs • Silicon MOS FETs ● For Small Signal Application Structure Part No. Absolute Maximum Ratings Ta = 25 °C VDS ✽V VGSO ID PD DSS (V) N-ch (V) (A) 2SK0601 1 000 (2SK601) 2SK0614 (2SK614) (mW) Electrical Characteristics (Ta = 25 °C)