30 PIN SIP DRAM MEMORY Search Results

Contextual Info: M IC R O N DRAM 256K X 8 MT2D2568 DRAM MODULE 256K x 8 DRAM FAST PAGE MODE (MT2D2568 _ MODULE IV IW L /lS k b . LOW POWER, EXTENDED REFRESH (MT2D2568 L) FEATURES PIN ASSIGNMENT (Top View) OPTIONS • Packages Leadless 30-pin SIMM Leaded 30-pin SIP • Power/Refresh

MT8C

Contextual Info: M IC R O N MT8C9026 1MEG x 9 DRAM DRAM MODULE STATIC COLUMN PIN ASSIGNMENT (Top View OPTIONS MARKING • Timing 80ns access 100ns access 120ns access • Packages: Leaded 30 -pin SIP Leadless 30-pin SIMM -10 -12 MN M GENERAL DESCRIPTION The MT8C9026 is a randomly accessed solid-state

30-pin simm memory

Contextual Info: [M IC R O N MT8C8026 1MEG x 8 DRAM DRAM MODULE STATIC COLUMN PIN ASSIGNMENT Top View OPTIONS MARKING • Timing 80ns access 100ns access 120ns access • Packages: Leaded 30 -pin SIP Leadless 30-pin SIMM -10 -12 MN M GENERAL DESCRIPTION The MT8C8026 is a randomly accessed solid-state

Contextual Info: M IC R O N MT8C8025 DRAM MODULE 1MEG x 8 DRAM NIBBLE MODE FEATURES MARKING • Timing 80ns access 100ns access 120ns access • Packages: Leaded 30-pin SIP Leadless 30-pin SIMM -10 -12 MN M GENERAL DESCRIPTION The MT8C8025 is a randomly accessed solid-state

Contextual Info: ADVANCE M IC R O N 16 MEG X MT8D168 8 DRAM M OD ULE 16 MEG x 8 DRAM FAST PAGE MODE FEATURES PIN ASSIGNMENT Top View OPTIONS MARKING • Timing 60ns access 70ns access 80ns access -6 -7 • Packages Leadless 3 0 -pin SIMM Leaded 30-pin SIP 30-Pin SIMM (T-6)

256k 30-pin SIMM

Abstract: 30-pin simm memory MT8259 30-pin SIMM
Contextual Info: |U|IC=RON MT8259 256K X 8 DRAM DRAM MODULE PIN ASSIGNMENT Top View OPTIONS Vcc CÄ5 DQ1 AO A1 DQ2 A2 A3 Vss DQ3 A4 A5 DQ4 A6 A7 DQ5 A8 NC NC DQ6 MARKING • Timing 80ns access 100ns access 120ns access 150ns access • Packages: Leadless 30-pin SIMM Leaded 30-pin SIP

Contextual Info: |U|IC=RON MT9259 DRAM MODULE 256K X 9 DRAM LOW PROFILE DRAM FEATURES OPTIONS MODULE • Industry standard pin-out in a 30-pin single-in-line package SIP • Low profile, double-side mount (0.45 in) • Single 5V±10% power supply • All inputs, outputs and clocks are fully T I L

MCM91000

Abstract: motorola mcm91000s
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM91000 MCM9L1000 1Mx9 Bit Dynamic Random Access Memory Module The MCM 91000 and MCM9L1000 are 9M dynam ic random access memory DRAM modules organized as 1,048,576 x 9 bits. The modules are 30-lead single-in-line memory m odules (SIMM) or 30-pin single-in-line packages (SIP)

MCM91000-70

Abstract: MCM91000SG motorola mcm91000s
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1M x 9 Bit Dynamic Random Access Memory Module MCM91000 MCM9L1000 The MCM91000 and MCM9L1000 are 9M dynamic random access memory DRAM modules organized as 1,048,576 x 9 bits. The modules are 30-lead single­ in-line memory modules (SIMM) or 30-pin single-in-line packages (SIP) consisting of

mcm91000s

Abstract: motorola 30-pin simm memory dynamic mcm511000 MCM91000L MCM91000-80 simm 30-pin 9-bit MCM91000
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM91000 Product Preview 1 M x 9 Bit Dynam ic Random Access M em ory M odule The MCM91000L and MCM91000S are 9M , dynamic random access memory DRAM modules organized as 1,048,576 x 9 bits. The modules are 30-lead singlein-line memory modules (SIMM) or 30*pin single-in-line packages (SIP) consist­

MCM81000AS10

Abstract: motorola 30-pin simm memory dynamic mcm81000s
Contextual Info: M O TO RO LA SEM ICO NDUCTO R TECHNICAL DATA 1Mx8 Bit Dynamic Random Access Module MCM81000 MCM8L1000 The MCM81000 and M CM8L1000 are 8M dynamic random access memory DRAM modules organized as 1,048,576 x 8 bils. The modules are 30-lead single-in-line memory modules (SIMM) or 30-pin single-in-line packages (SIP)

MCM91000SG

Abstract: 91000S-80 91000S-70 91000LH70
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM91000 1M x 9 Bit Dynamic Random Access Memory Module The MCM91000 is a 9M dynamic random access memory DRAM module or­ ganized as 1,048,576 x 9 bits. The module is a 30-lead single-in-line memory mod­ ule (SIMM) or 30-pin single-in-line package (SIP) consisting of nine MCM511000A

mcm91000as

Abstract: 91000LH70 mcm91000s
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM91000 1M x 9 Bit Dynamic Random Access Memory Module The MCM91000 is a 9M dynamic random access memory DRAM module or­ ganized as 1,048,576 x 9 bits. The module is a 30-lead single-in-line memory mod­ ule (SIMM) or 30-pin single-in-line package (SIP) consisting of nine MCM511000A

Contextual Info: Jü l 1 8 J98S SM49256ALP 256KByte 256K x 9 CMOS DRAM Module {Low Profile) General Description Features The SM 49256ALP is a high performance, 256Kbyte dynamic RAM memory module organized as 256K words by 9 bits, in a 30-pin, SIP(single-in-line pins) package.

Contextual Info: SMS481000SLP 1MByte 1M x 8 CMOS DRAM Module {Low Profile) General Description Features The SMS481000SLP is a high performance, 1-megabyte dynamic RAM memory module organized as 1M words by 8 bits, in a 30-pin, SIP(smgle-m-line pins) package. The module utilizes eight CMOS 1M x 1 dynamic RAMs

Contextual Info: »SV i f SM491000ALP 1MByte 1M x 9 CMOS Low Profile DRAM Module General Description Features The SM 491000ALP is a high performance, 1Mbyte dynamic RAM memory m odule organized as 1M words by 9 bits, in a 30-pin, SIP package. • • The module utilizes tw o CM OS 1M x 4 and one 1M x 1

Contextual Info: ML 1 6 »82 SM481000A 1MByte l M x 8 CMOS DRAM Module General Description Features The SM 481000A is a high performance, 1-megabyte dynam ic RAM module organized as 1M words by 8 bits, in a 30-pin SIP memory module package. • • • The module utilizes two CMOS 1M x 4 dynamic RAMs

KM41C1000

Abstract: KMM591000
Contextual Info: SAMSUNG K M M 4 9 1 0 0 0 /K M M 5 9 1 0 0 0 □ - • - 1M x 9 DRAM SIP and SIMM Memory Modules GENERAL DESCRIPTION FEATURES The Samsung KMM491000 and KMM591000 are 1M x 9 dynamic RAM high density memory mod­ ules. The ninth bit is generally used for parity and

KM41C1000

Abstract: 30-pin simm memory KMM591000 30-pin simm memory dynamic IRP 745 km41c SIMM 30-pin KMM491000-10 KMM591000-10 KMM491000-12
Contextual Info: S AM SUN G K M M 4 9 1 0 0 0 /K M M 5 9 1 0 0 0 □ " W Semiconductor 1M x 9 DRAM SIP and SIMM Memory Modules GENERAL DESCRIPTION FEATURES The Samsung KMM491000 and KMM591000 are 1M x 9 dynamic RAM high density memory mod­ ules. The ninth bit is generally used for parity and

KM41C1000

Abstract: KMM581000 30 pin SIP dram memory connector SAMSUNG 30 PIN samsung 30-pin KMM581000-12 connector SAMSUNG 12 PIN KMM581000-10 KM41C100
Contextual Info: SAMSUNG SEMICONDUCTOR INC Tfl DE§ 7 ^ 4 1 4 2 0D05S27 0 HU - ¿ 3 KMM481OOO/KMM581OOO K M M481001/KMM581001 - 11 PRELIMINARY SPECIFICATION M E M O R Y MODULES 1Mx8 Bit DRAM SIP and SIMM Memory Modules FEATURES GENERAL DESCRIPTION • 1,048,576 x 8-blt Organization

KM41C1000

Abstract: KMM591000 connector SAMSUNG 30 PIN 30 pin SIP dram memory 30-pin simm memory KMM591001 simm 30-pin 9-bit
Contextual Info: S AHSUNG SEMICONDUCTOR INC AU ñ H l . . PRELIMINARY SPECIFICATION KM M491000/KM M591000 KMM491001/KMM591001 MEMORY MODULES 1 M x 9 Bit DRAM SIP and SIMM Memory Modules FEATURES GENERAL DESCRIPTION _ • 1,048,576 x 9-bit Organization • N inth device has separate D, Q and CAS or

AK584096AS

Abstract: AK584096AG
Contextual Info: AK584096AS / AK584096AG 4,194,304 x 8 Bit CMOS Dynamic Random Access Memory ACCUTEK DESCRIPTION MICROCIRCUIT CORPORATION Front View The Accutek AK584096 high density memory module is CMOS DRAM organized in 4 Meg x 8 bit words. The assembly consists of eight standard 4 Meg x 1 DRAMs in plastic SOJ packages mounted

Contextual Info: 4,194,304 Word by 9 Bit CMOS Dynamic Random Access Memory MICROCIM T CORPORATION DESCRIPTION The Accutek AK594096 high density memory module is a CMOS dynamic RAM organized in 4 Meg x 9 bit words. The assembly consists of two 4 Meg x 4 DRAMS and one 4 Meg x 1 DRAM, in

30 pin SIP dram memory

Abstract: AK581024 AK5816384 AK58256 AK584096 AK584096AG AK584096AS
Contextual Info: DESCRIPTION Accutek Microcircuit Corporation AK584096AS / AK584096AG 4,194,304 x 8 Bit CMOS Dynamic Random Access Memory Front View The Accutek AK584096 high density memory module is CMOS DRAM organized in 4 Meg x 8 bit words. The assembly consists of eight standard 4 Meg x 1 DRAMs in plastic SOJ packages mounted