303DB Search Results

quadrant photodiode rca

Contextual Info: E 6 & 6/CANAD A/O PTOELEK ID 303Dbl0 GDQ0143 IME « C A N A D ÆM Electro n • I v i I Photodiode C30927E DATA SHEET Optics % Quadrant Silicon Avalanche Photodiodes for Tracking Applications Optical Characteristics Full Angle for Totally illuminated Photosensitive S u r fa c e .

Contextual Info: E G & G/CANAD A/O PTOELEK IO D • 303DblQ DOODObS «Ì22 H C A N A C86051E Series GaAIAs Injection Lasers T -w -ù s Developmental Types 800-900 nm Gallium Aluminum Arsenide Injection Lasers for Pulsed Operation With Integral Fiber Optic Output Cables and Connectors

C30971

Abstract: RCA H 515 PREAMPLIFIER TRANSIMPEDANCE optic fet 090Q C30997-010 C30997-250 C30997-XXXQC-YY
Contextual Info: E G v t & G/CANADA/OPTOELEK c / r 303DblD DODGlb? bôb H C A N A ID Silicon Photodiodes C30997 Series DATA SHEET Optics Tran sim p ed a n c e P re a m p lifie r M o d u le s W ith or W ith o u t Integral Fib e r O p tic P ig ta ils for D ete ction of 40 0 to 10 0 0 nm R a d ia tio n

linear array photodiode element

Abstract: Photodiode Array 32 element germanium photodiode PIN photodiode ge Photodiode Array linear Ge dual photodiode photodiode germanium photodiode linear array GE PHOTODIODE germanium
Contextual Info: E G & G JUDSON 3 ^ ^ H CD J 1 D r Series ] • 303Db05 0000E22 S ■JUD -

HgCdTe

Abstract: PA100 ZnSe judson PA-100
Contextual Info: E C U I H C T I Z J I v I C J UDSON 3TE J> . S r ie S • 303Db05 00 00235 3 M J U D Short-Wave Mercury Cadmium Telluride Detectors 2 to 5 jam 7-m-m Figure 24-1 Typical Detectivity vs Wavelength for J15TE Series Short-Wave HgCdTe Detectors General J15TE Series "Short-Wave" detectors

090Q

Abstract: PREAMPLIFIER TRANSIMPEDANCE optic fet C30902 rca 514 QC-04 30080 46 spectran C30998-010 C30998-250 303Db
Contextual Info: E G 8. G / C A N A D A / O P T O E L E K R C /1 303db l0 ID DD00171 DD7 I CANA Silicon Avalanche Photodiodes C30998 Series Optics DATA SHEET '-HI-6 1 For Detection of 400 to 1000 nm Radiation Transimpedance Preamplifier Modules With or Without Integral Fiber Optic Pigtails

Contextual Info: 5bE D • 303DbDci G0 010 34 455 H V C T VT B 1 1 1 2B I, 13BI VTB Process Photodiodes E G 8. G VACTEC PACKAGE DIMENSIONS PRODUCT DESCRIPTION Small area planar silicon photodiode in a lensed, dual lead, TO-46 package. The package incorporates an infrared rejection filter. Chip is isolated from

Vactec

Abstract: dual photodiode VTB1012BI VTB1013BI k420
Contextual Info: 5L.E ]> • 303DbGT 00G1G3D ÔOT « V C T VTB Process Photodiodes T ' 4^' 6 I V T B 1 0 1 2 B I , 1 3B I E G 8, G VACTEC " PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION CASE 18 TO-46 HERMETIC CHIP ACTIVE AREA: .0025 in2 (1.60 mm2) Small area planar silicon photodiode in

DDD1222

Abstract: VTE3372LA VTE3374LA
Contextual Info: SbE D 303DbDT DDD1222 STS GaAIAs Infrared Emitting Diodes VCT VTE3372LA, 74LA Long T-1 Plastic Package — 880 nm E 6 & 6 VACTEC - T-H» - I 3 h PACKAGE DIMENSIONS inch mm .2 2 .0 6 (5 .6 ) ( 1 .5 ) ( 0 .5 *) ( 0 . 4 -3 ) .0 2 3 .0 1 7 .0 2 6 .0 1 7 .1 2 6

VTB5050B

Abstract: VTB5051B
Contextual Info: SbE T> m 303DbDT 0001041 b'IS » V C T / V T B 5 0 5 0 B , 5051 B VTB Process Photodiodes E G & G VACTEC P A C K A G E D IM E N S IO N S inch mm CASE 14 TO-5 HERMETIC CHIP ACTIVE AREA: .023 in2 (14.8 mm2) P R O D U C T D E S C R IP T IO N Planar silicon photodiode in a “flat" win­

SIECOR Fiber Optic cable

Abstract: EG*G Optoelectronics 2sa 1300 equivalent c30617e Siecor C860XXE-12 C30654 C30617 Siecor 62.5 SIECOR Fiber Optics
Contextual Info: E G & 6 /CANADA/ OPTOELEK 47E » • 303DblG 00002=13 h ■ E O S iG CANA C86075E & OPTOELECTRONICS C86082E Series T - v t - e i C86082E Series C86075E Series HI“ - Dual-in-Line Package with Single or

Contextual Info: 303Db 0T 0 0 0 1 0 4 4 3T4 • VCT SbE D VTB5050UVJ, 1UVJ VTB Process Photodiodes 4 1 -S I E G & 6 VACTEC PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION CASE14A Planarsilicon photodiode in a three lead TO-5 package with a UV transmitting "flat" window. Chip is isolated from

Contextual Info: E G 8. G/ CANADA/ OPTOELEK M7E D 303Dbl0 OODOBEb b • CANA HAD Series 1100A T-W-67 Features • Built-in High Speed Amplifier • Groundable Case • Shielded Amplifier • Offset Null Control • Wide Spectral Range • Large Active Area Operating Data and Specifications at 23°C

Contextual Info: E G & G/CANADA/OPTOELEK SGD/YAG Series: 47E D • 303Dbl0 00D032M 2 ■ CANA Multi-Element T-V/-53 Features • • • Cross Talk > 1 % Between Elements Oxide Passivated Wide Spectral Range • • • Planar Diffused Structure Wide Spectral Range Linearity Over Wide Dynamic Range

Contextual Info: SbE D • 303DbD^ 0Ü D llfl3 .050" NPN Phototransistors HVCT VTT 111 2, 13, 14 TO-46 Lensed Package E TES G 8. G V A C T E C T—47—67 PACKAGE DIMENSIONS inch mm CASE 3 PRODUCT DESCRIPTION T0-4G HERMETIC (LENSED) CHIP TYPE: 50T ABSOLUTE MAXIMUM RATINGS ■

C30122

Abstract: rca 036 LS117 o canada general electric
Contextual Info: E G & Ê/CANADA/OPTOELEK 2e! D 303DblD tecîn c Optii 00D025G Eb3 ICANA 7141-1! Infrared-Emitting Diode C30122 D A TA S H E E T C30122 - Surface Emitting LED in two lead TO-18 package • W avelength o f Peak Radiant Intensity 904 nanom eters ■ T otal Radiant Flux at IF= 1 0 0 m A

Contextual Info: E G & G/CANADA/OPTOELEK 47E 3030blG D GGQ0332 I CANA 1 F Series FND-100;FNP-100Q;FOD-100 T4/-53 Features • • • High Responsivity Ultra-Fast Rise and Fall Time Isolated Photodiode Chip Large Active Area Wide Spectral Range Low NEP Operating Data and Specifications at 23°C: Typical Performance at 90 V Bias

UV led 200 nm peak

Abstract: UV led 320 nm 130LA uv led 365 VTB5051 VTB5051UV
Contextual Info: VTB 5051U V VTB Process Photodiodes PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION CASE 14 Planar silicon photodiode in a dual lead TO-5 package with a UV trans­ mitting “flat” window. Cathode is com­ mon to the case. These diodes offer very high shunt resistance and good

rca 036

Abstract: C30957E photodiode demodulation
Contextual Info: £ I G t & G/CANADA/OPTOELEK c / 3D30bl0 OOGGISS SbM H C A N A ID Photodiode C30957E DATA SHEET Optics l T - W n-Type Silicon p-i-n Photodetector • Detector Chip Close to Window ■ Low Operating Voltage — VR = 45 V ■ Anti-Reflection Coated to Enhance Responsivity at 900 nm

C30817

Abstract: s915 C30872 C30954E C30955E tic 1060 C30956E s914 C30916E 92LS-S916
Contextual Info: £ n G & G/CANADA/OPTOELEK e / ID » l Electro Optics 3 D 3 D b lO O O O O IH ^ bbO ICANA 'T '- y / '- S V Photodiode C30954E, C30955E, C30956E DATA SHEET Large Area Long Wavelength Enhanced Silicon Avalanche Photodiodes for General-Purpose Applications • High Quantum Efficiency —

Vactec 25

Abstract: Vactec phct VTT-C60
Contextual Info: 3030bDti GQOliab 7 3 4 5t>E D .060" NPN Phototransistor Chip V TT-C 60 E G & G VACTEC C H IP D IM E N S IO N S inch mm> D E SC R IP T IO N EG&G Vactec fabricates its silicon photosensor chips using state-of-the-art planar diffusion technology. All chips are

Contextual Info: VTP4085, 4085S VTP Process Photodiodes PACKAGE DIMENSIONS inch mm .265 ( 6 . 73 ) .067 ( 1 .70 ) ( 0 . 51 ) CASE 13 CERAMIC PRODUCT DESCRIPTION Large area planar silicon photodiode mounted on a two lead ceramic sub­ strate and coated with a layer of clear

A1W 73

Abstract: .7J4 VTB100
Contextual Info: VTB Process Photodiodes V T B 100 P A C K A G E D IM E N S IO N S cathode: 45° mark X .0 3 5 inch mm 1 .0 0 (0 .8 9 ) Ï - \ CATHODE, .2 3 0 (5 .8 4 ) SENSITIVE .2 1 0 (5 .3 3 ) SURFACE + jr_ AN O D E .2 8 5 (7 .2 4 ) .2 6 5 (6 .7 3 )’ .1 6 2

VTL3B29

Abstract: resistance 1k ohm E73887 27110 3B29 VTL3B19 20MA120
Contextual Info: V T L 3 B 1 9, 3 B 2 9 Low Cost Neon Axial Vactrols PACKAGE DIMENSIONS inch mm UL Listed File #E73887 DESCRIPTION V T L 3 B 2 9 has a comparable "on” resistance to the V T L 3 B 1 9 , but with a much sm aller tem pera­ ture coefficient of resistance and less light his­