3309 POWER TRANSISTOR Search Results

D012

Abstract: D041 texas instruments DTL logic
Contextual Info: TM S 3309 JC TWIN 512-BIT DYNAMIC SHIFT REGISTER/ACCUMULATOR > features z c T w o independent registers/accum ulators > a < 10 -M H z guaranteed operating frequency L o w power dissipation typical 90 /¿W/bit at 1 M H z T T L / D T L com patible Recirculate logic on the chip

da 3309

Abstract: amplificateur de son 3v self choc 2n3309 2522N signaux SELF DE CHOC
Contextual Info: 2 N 3309 NPN SILICON TRANSISTORS, Ei IT A X IA L PLANAR TRANSISTORS NPN SILIC IU M , PLAN A R E P IT A X IA U X • Power amplification at 250 MHz A m p lifica tio n de puissance à 250 MHz v CBO 50V v CEO 30 V O *T Gp 300 MHz min. 2W min. 250 MHz 7 dB min.

2N3927

Abstract: 2N3926 2N3924 2N3924h 7z08 4312 020 36640 philips 1969 transistor 2N3 400Ic philips 1968
Contextual Info: MIE D m 711Gfl2b 002Ö057 1 2N3924 2N3926 2N3927 [PHIN PHILIPS INTERNATIONAL r - 3 3 - O SILICON PLANAR EPITAXIAL OVERLAY TRANSISTORS The 2N3924 is an n-p-n overlay transistor in aTO-39 metal envelope with the collector connected to the case. The 2N3926 and the 2N3927 are n-p-n overlay transistors in T0-60 metal envelopes with the emitter

BD235 PHILIPS

Abstract: bd233 T BD233 bd237 philips BD234 BD237-10 BD235 BD236 BD237 BD238
Contextual Info: BD233 BD235 BD237 PHILIPS INTERNATIONAL SbE T> • 711002b 004205*4 725 ■ P H I N T - 3 3 - O SILICON EPITAXIAL-BASE POWER TRANSISTORS N-P-N transistors in a S O T -3 2 p la stic envelope intended fo r use in te levision and au d io a m p lifie r c irc u its

RZB06050W

Abstract: transistor B42 Transistor 2TD 476 capacitor 100B102KP50X capacitor 476
Contextual Info: P h ilip s S e m icon d u ctors Prelim inary sp ecification NPN silicon planar epitaxial „ m ic rowave power transistor PHILIPS INTERNATIONAL FEATURES Suitable for short and medium pulse applications up to 1 ms/10% Internal input prematching networks allow an easier design

transistor rf cm 1104

Abstract: BLY92A transistor rf m 1104 transistor m 1104 TRANSISTOR D 1978 T3309 4312 020 36640 transistor 1971 1102 transistor
Contextual Info: 11 P H I L I P S INTERNATIONAL MAINTENANCE TYPE MIE » B 71 1 0 ê 2 t i QGSTTTB 3 ESPHIN Jl BLY92A T -3 3 -0 ? V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor fo r use in class-A, B and C operated mobile, industrial and military transmitters w ith a nominal supply voltage o f 28 V. The transistor is resistance stabilized and

B0937

Abstract: b 939 a ic B0937 T3309 B0941 BD933 transistor A 935 BD934 BD937 BD941
Contextual Info: BD933; 935 BD937; 939 BD941 PHILIPS INTERNATIONAL SbE D • 711DfiEb 0043D44 MIL ■ P H I N SILICO N EPITAXIAL B A S E PO W ER T R A N S IS T O R S 7 - 3 3 - 0 * 1 N-P-N silicon transistors in a plastic envelope intended for use in output stages of audio and television

ZTX948

Abstract: DSA003779
Contextual Info: PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ZTX948 ELECTRICAL CHARACTERISTICS at Tamb = 25°C PARAMETER SYMBOL Base-Emitter Turn-On Voltage VBE(on) Static Forward Current Transfer Ratio hFE MIN. TYP. MAX. UNIT CONDITIONS. -860 -1000 mV IC=-5A, VCE=-1V*

TACAN

Abstract: SD1538 TACAN transistor low power rf transistor T
Contextual Info: O M C c T I ^ P 'ïa T E 3 7 □ □ □ O m O S G S—THOMSON_ SOLID STATE MICROWAVE 1 TD T -33-09 SD1538 THOMSON-CSF COMPONENTS CORPORATION ; Montgomeryville, PA 18936 • 215 362-8500 «TWX 510-661-7299 MICROWAVE POWER TRANSISTOR IFF, DME, TACAN

C 3311 transistor

Contextual Info: PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ISSUE 2 -JU N E 94 _ FEATURES * * * 4.5 Am ps continuous current Up to 20 Am ps peak current Very lo w saturation voltage * * Excellent gain up to 20 Am ps Very lo w leakage * * Exceptional gain linearity dow n to 10mA

rtc37

Abstract: PV3742B4X P10T MARKING CODE N for RF transistor
Contextual Info: N AMER P H I L I P S / D I S C R E T E MAINTENANCE TYPE Jl DfaE D ^53^31 D D lSin PV3742B4X T - 33-09 MICROWAVE POWER TRAN SISTO R N-P-N silicon transistor for use in common-base class-B power amplifiers up to 4,2 GHz. , Diffused emitter ballasting resistors, interdigitated structure, multiceli geometry, localized thick oxide

UMIL80

Abstract: UMIL10 j105 transistor acrian inc
Contextual Info: UMILIO GENERAL DESCRIPTION The UMIL10 is a general purpose UHF power common emitter transistor designed for use through 400 MHz. It features gold metallization for high reliability and diffused ballasting for superior ruggedness. It can be operated full Class A at

Contextual Info: BDT91F; BDT93F BDT95F PHILIPS INTERNATIONAL SbE D • 7 1 1 D Ô 2 b G G M 3 3 3 D b74 « P H I N SILICON EPITAXIAL POWER TRANSISTORS NPN silicon epitaxial power transistors, each in a SOT186 envelope with an electrically insulated mounting base. PNP complements are BDT92F, BDT94Fand BDT96F.

Contextual Info: BD949F; BD951F BD953F; BD955F PHILIPS INTERNATIONAL SbE D I 7110fl2b 004310b ST3 « P H I N SILICON EPITAXIAL POWER TRANSISTORS NPN silicon power transistors each in a SO T186 envelope w ith an electrically insulated mounting base. PNP complements are B D 9 5 0 F , B D 9 5 2 F , BD 954F and B D 956F.

Contextual Info: PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ZTX948 ISSUE 2 – JUNE 94 FEATURES * 4.5 Amps continuous current * Up to 20 Amps peak current * Very low saturation voltage * Excellent gain up to 20 Amps * Very low leakage * Exceptional gain linearity down to 10mA

Contextual Info: N ANER PHILIPS/DISCRETE D E V E L O P M E N T DATA □bE D • bbS3T31 0015147 b ■ PZ2327B15U This data sheet contains advance information and specifications are subject to change without notice. T-c 3 % - Q I MICROWAVE POW ER TRANSISTOR NPN silicon epitaxial microwave power transistor, intended for use in a common-base, class-C broad­

PZ2327B15U

Contextual Info: PZ2327B15U PHILIPS INTERNATIONAL SbE D • 711DflSb DDMb4flfl QM3 ■ P H I N 7 ^ 3 3 -0 ? MICROWAVE POWER TRANSISTOR NPN silicon epitaxial microwave power transistor, intended fo r use in a common-base, class-C broad­ band power am plifier, operating in the 2.3 to 2.7 GHz frequency range.

2222C

Abstract: BD944 945F
Contextual Info: BD943F; BD945F BD947F PHILIPS INT ER NATIONAL 5fc,E ] • 711D02b D O ^ O T A fiTT M P H I N T -S l'O l SILICON EPITAXIAL POWER TRANSISTORS NPN silicon epitaxial power transistors, each in a SOT 186 envelope with an electrically insulated mounting base. PNP complements are BD944F, BD946Fand BD948F.

Contextual Info: PZ2327B15U PHILIPS INTERNATIONAL SbE D • 711Dfl2b DDMb4flfl 043 ■ P H I N 7 MICROWAVE POWER TRANSISTOR NPN silicon epitaxial microwave power transistor, intended fo r use in a common-base, class-C broad­ band power am plifier, operating in the 2.3 to 2.7 GHz frequency range.

BD233

Abstract: FT501
Contextual Info: BD233 BD235 BD237 PHILIPS INTERNATIONAL SbE D • 711üa2b 0042054 725 » P H I N T - 3 3 - 0 ^ SILICON EPITAXIAL-BASE POWER TRANSISTORS N-P-N transistors in a SO T-32 plastic envelope intended fo r use in television and audio am plifier circuits where high peak powers can occur. P-N-P complements are B D 234, B D 236 and B D238. Matched pairs

Contextual Info: PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ZTX948 IS S U E 2 - J U N E 94. . . FEATURES * 4.5 A m p s continuous current * U p to 20 A m p s peak current

BB5M3

Abstract: BUT21A BUT21 BUT21BF BUT21CF IEC134 but21c
Contextual Info: N AMER PHILIPS/DISCRETE 25E D II bbS.BT31 D010Ô43 a I • BUT21BF BUT21CF X T - 3 3 -0 7 SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistor in a SOT186 envelope with electrically isolated seating plane. Intended for use in converters, inverters, switching regulators, motor control

BDT29

Abstract: BDT29B BDT30 TIP29 c4060
Contextual Info: 11 N AMER PHILIPS/DISCRETE 25E D • bfa53131 GQlTbSB Ô ■ BDT29; 29A BDT29B; 29C T - 3 3 - 0 7 SILICON EPITAXIAL BASE POWER TRANSISTORS N-P-N silicon transistors in a plastic envelope intended for use in output stages o f audio and television am plifier circuits where high peak powers can occur. P-N-P complements are B D T 3 0 series.

BD 201F

Contextual Info: BD201F; BD203F; BDX77F PHILIPS INTERNATIONAL SbE D • 711002b 0042Û0Ô AMS ■ PHIN T '3 3 - O ^ SILICON EPITAXIAL POWER TRANSISTORS NPN Silicon power transistors in a SO T186 envelope w ith an electrically insulated mounting base. PNP complements are B D 202F, BD204F and B D X 78F .