335N Search Results

Contextual Info: PART NUMBER: 335NPS050M BI-PO LAR SURFACE MOUNT ALUMINUM ELECTROLYTIC CAPACITORS Parts are RoHS com pliant Date code w hen parts became RoHS: 23 ELECTRICAL SPECIFICATIONS C apacitance: 3.3 uF T ole ra n ce: -20 % . +20 % Dissipation Factor: 0.14 Max at 120 Hz and 20°C

Contextual Info: PART NUMBER: 335NCN050M BI-PO LAR SURFACE MOUNT ALUMINUM ELECTROLYTIC CAPACITORS P a rts a re R oH S c o m p lia n t D a te c o d e w h e n p a rts b e c a m e RoHS: 15 ELECTRICAL SPECIFICATIONS C apacitance: 3.3 uF T ole ra n ce: -20 % . +20 % Dissipation Factor: 0.18 Max at 120 Hz and 20°C

ARF461AG

Abstract: ARF461A ARF461B VK200-4B 40.68mhz 40.68MHz power amplifier
Contextual Info: ARF461A G ARF461B(G) TO -24 7 Common Source RF POWER MOSFETs N - CHANNEL ENHANCEMENT MODE 250V 150W 65MHz The ARF461A and ARF461B comprise a symmetric pair of common drain RF power transistors designed for pushpull scientific, commercial, medical and industrial RF power amplifier applications up to 65 MHz. They have been

104NCN050M

Abstract: 105NCN050M 224NCN050M 225NCN035M 225NCN050M 334NCN050M 335NCN050M 474NCN050M 475NCN016M
Contextual Info: 105 220v 6 +105°C Non-polarized Surface Mount Aluminum Electrolytic Capacitors NCN FEATURES • 5.5 mm height ■ Automatic insertion applicable ■ Capacitance Range .1 to 47 µF ■ Standard Case Sizes SPECIFICATIONS Capacitance Tolerance ±20% at 120Hz, 20°C

Contextual Info: A D S -9 2 7 1MHz, 14-Bit, Low-Power Sampling A/D Converter INNOVATION a n d EXCELLENCE FEATURES • • • • • • • • 14-Bit resolution 1MHz sampling rate No missing codes Functionally complete Small 24-pin DDIP Low power, 1.95 Watts maximum Operates from ±15V or ±12V supplies

HM4716

Abstract: HM4864P2
Contextual Info: H M 4 8 6 4 - 2 , H M 4 8 6 4 - 3 - HM4864P-2, HM4864P-3 6 5 5 3 6 -word x 1-bit Dynamic Random A cce ss Memory The HM4864 is a 65,536-words by 1-bit, MOS random access memory circuit fabricated with H IT A C H I'S double-poly N-channel H M 4 86 4 -2 , H M 4864-3

Contextual Info: a P R E L IM IN A R Y Advanced Micro Devices Am79C830A FORMAC Plus DISTINCTIVE CHARACTERISTICS • Implements the FDDI Media Access Control MAC layer protocol for ISO standard 9314-2 ■ Pointers to claim and beacon frames ■ Buffer-memory clock frequency range:

2SK1500

Abstract: 2SK1502 2SK1535 2SK1537 2SK1513 235n 2501L 2SK1501 2SK1531 2SK1438
Contextual Info: - 108 - ft m % *± £ m & m £ A V* it ft K V, tt m * (V ft * ffi X P d/P c h £ * (W) I* (A) less (max) (A) Vg s (V) (Ta=25T) 1Ï m S Id s (min) (max) V d s (A) (A) (V) (min) (V) (max) V d s (V) (V) (min) (S) Id (A) (typ) V d s (S) (V) Id (A) 2SK1497

2SK520

Abstract: 2SK523 2SK508 2SK537 2sk515 2SK511 2SK514 2SK518 2SK519 2sk43
Contextual Info: - 28 - € tt £ m & m iS f . 1 1 Jk K /È Ä V* V m m . (V) «• m të P d /P c h * * (A) * * (W) Ig s s (max) (A) Vg s (V) ^ W (Ta=25°C) te (min) (max) Vd s (V) (V) (V) (min) (max) Vd s (A) (A) (V) Id (A) Q (min) (S) 1 I >>60 B -— ' ü Vd s (V) Id

upd4265

Abstract: 4265 AAFW
Contextual Info: SEC /iP D 4 2 6 5 6 5 ,5 3 6 x 1 -B IT D Y N A M IC CMOS RAM NEC Electronics Inc. Revision 1 Pin Configuration D e scrip tio n T h e N E C /UPD4265 is a 6 5 ,5 3 6 -w o rd b y 1 -b it d y n a m ic C M O S R a n d o m A c c e s s M e m o ry R A M d e s ig n e d to

arco mica trimmer

Abstract: class B push pull power amplifier ARF461A ARF461B VK200-4B class td amplifier
Contextual Info: ARF461A ARF461B D G S TO-247 Common Source RF POWER MOSFETs N - CHANNEL ENHANCEMENT MODE 250V 150W 65MHz The ARF461A and ARF461B comprise a symmetric pair of common source RF power transistors designed for pushpull scientific, commercial, medical and industrial RF power amplifier applications up to 65 MHz. They have been

WLP 1500

Contextual Info: 19-5493; Rev 0; 9/10 TION KIT EVALUA BLE IL AVA A RF Power Detector with Shutdown Control The MAX2209A is a wideband 800MHz to 2GHz RF power detector. It takes an RF signal from the directional coupler at the input, and outputs a DC voltage proportional to the RF peak voltage. The change in output

Contextual Info: 2345671589A 9BCDEFEFBDBCEFBFEDBECB 9BCDEFEE2 !  '$EB ###EB + 234567389 ! *7+9,!-!.ED#C$E%%BCE /E'$E#E0+*F /E#E*.2 /

Contextual Info: Small size – Non/Bi-polar FEATURES Bypass – Coupling – Filtering APPLICATIONS Operating Temperature Range Capacitance Tolerance WVDC Surge voltage SVDC WVDC Dissipation Factor 6.3 7.9 6.3 .32 10 13 10 .26 16 20 16 .24 Rated WVDC 6.3 10 16 -25°C to +20°C

Contextual Info: APT26F120B2 APT26F120L 1200V, 27A, 0.58Ω Max, trr ≤335ns N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft

104NCN050M

Abstract: 225NCN050M 334NCN050M 335NCN050M 474NCN050M 475NCN016M 105NCN050M 224NCN050M 225NCN035M
Contextual Info: 105 220v 6 NCN Surface Mount +105°C Non-polarized Surface Mount Aluminum Electrolytic Capacitors FEATURES • 5.5 mm height ■ Automatic insertion applicable ■ Capacitance Range .1 to 47 µF ■ Standard Case Sizes SPECIFICATIONS Capacitance Tolerance

le2 20

Abstract: le220
Contextual Info: ISOLATION TRANSFORMERS SERIES ‘LE’ LAN-ETHERNET APPLICATIONS 0.865MAX 122.5» Econom ical Low leakag e in d u ctan ce and interw in d in g capa citan ce Fast rise tim e 3n S ec typ. Low p ro file 16-pin D IP 14-p in avail. S u rface M o u n t design availab le

APT26F120B2

Abstract: APT26F120L MIC4452
Contextual Info: APT26F120B2 APT26F120L 1200V, 27A, 0.58Ω Max, trr ≤335ns N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft

2SK30

Abstract: 2sK30 fet 2SK19TM 2SK34 FET 2SK23A 2SK44SP 2sk43 3A 2SK30 2SK37 2SK33
Contextual Info: - 28 - € tt £ m & m iS f . 1 1 Jk K /È Ä V* V m m . * * (V) «• m të P d /P c h (A) * * (W) Ig s s (max) (A) Vg s (V) ^ te W (Ta=25°C) (min) (max) Vd s (V) (V) (V) (min) (max) V d s (V) (A) (A) Id (A) Q (min) (S) 1 I >>60 B -—' ü Vd s (V) Id

UPD4265

Contextual Info: SEC /¿PD4265 6 5 ,5 3 6 x 1 -BIT DYNAMIC CMOS RAM NEC Electronics Inc. Revision 1 Description Pin Configuration The NEC /UPD4265 is a 65,536-word by 1-bit d ynam ic CM O S Random Access M em ory RAM designed to operate from a single + 5 V p ow er supply. The

104NPS050M

Abstract: 105NPS050M 224NPS050M 225NPS035M 225NPS050M 334NPS050M 335NPS050M 474NPS050M 475NPS016M
Contextual Info: +85°C Non-Polar Surface Mount Chip Aluminum Electrolytic Capacitors NPS 85 1 50v FEATURES • Audio Coupling ■ Wide Capacitance Range: .1 to 47 µF ■ Standard Case Sizes ■ Solvent Proof ■ Operating Voltage Range: 6.3WVDC to 50 WVDC SPECIFICATIONS

Contextual Info: NCN Aluminum Electrolytic Capacitors +105ºC Bi-polar Surface Mount FEATURES APPLICATIONS Standardized case sizes – 5.4 mm height Bypass – Filtering – Coupling – De-coupling Operating Temperature Range -40°C to +85°C Capacitance Tolerance +20% at 120 Hz, 20°C

.00p

Abstract: KEL SL00 335N
Contextual Info: NOTES HEADER rn 1Î l\ j'1 Y I. MATES WITH : 55 5 7 S E R I E S PIN A IN CASE OF 2 C I R C U I T S HEADER, T H IS DIMENSION SHOULD BE 4.2mm. 3. M A TE R IA L & FINISH ENG. NO. 5569-NAI -NA 1-2 10 -NA 1-310 -NAGI -NAG 1-2 10 -NAG 1-3 10 -NAIG3 - N A IG 3 - 2 I0

APT26F120B2

Abstract: APT26F120L MIC4452 DTA105
Contextual Info: APT26F120B2 APT26F120L 1200V, 26A, 0.65Ω Max, trr ≤335ns N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft