335NS Search Results

Contextual Info: A D S -9 2 7 1MHz, 14-Bit, Low-Power Sampling A/D Converter INNOVATION a n d EXCELLENCE FEATURES • • • • • • • • 14-Bit resolution 1MHz sampling rate No missing codes Functionally complete Small 24-pin DDIP Low power, 1.95 Watts maximum Operates from ±15V or ±12V supplies

HM4716

Abstract: HM4864P2
Contextual Info: H M 4 8 6 4 - 2 , H M 4 8 6 4 - 3 - HM4864P-2, HM4864P-3 6 5 5 3 6 -word x 1-bit Dynamic Random A cce ss Memory The HM4864 is a 65,536-words by 1-bit, MOS random access memory circuit fabricated with H IT A C H I'S double-poly N-channel H M 4 86 4 -2 , H M 4864-3

2SK1500

Abstract: 2SK1502 2SK1535 2SK1537 2SK1513 235n 2501L 2SK1501 2SK1531 2SK1438
Contextual Info: - 108 - ft m % *± £ m & m £ A V* it ft K V, tt m * (V ft * ffi X P d/P c h £ * (W) I* (A) less (max) (A) Vg s (V) (Ta=25T) 1Ï m S Id s (min) (max) V d s (A) (A) (V) (min) (V) (max) V d s (V) (V) (min) (S) Id (A) (typ) V d s (S) (V) Id (A) 2SK1497

2SK520

Abstract: 2SK523 2SK508 2SK537 2sk515 2SK511 2SK514 2SK518 2SK519 2sk43
Contextual Info: - 28 - € tt £ m & m iS f . 1 1 Jk K /È Ä V* V m m . (V) «• m të P d /P c h * * (A) * * (W) Ig s s (max) (A) Vg s (V) ^ W (Ta=25°C) te (min) (max) Vd s (V) (V) (V) (min) (max) Vd s (A) (A) (V) Id (A) Q (min) (S) 1 I >>60 B -— ' ü Vd s (V) Id

upd4265

Abstract: 4265 AAFW
Contextual Info: SEC /iP D 4 2 6 5 6 5 ,5 3 6 x 1 -B IT D Y N A M IC CMOS RAM NEC Electronics Inc. Revision 1 Pin Configuration D e scrip tio n T h e N E C /UPD4265 is a 6 5 ,5 3 6 -w o rd b y 1 -b it d y n a m ic C M O S R a n d o m A c c e s s M e m o ry R A M d e s ig n e d to

HN462532G

Abstract: HN462732G HN4827128G-25 6116ALSP-15 482732AG 6116LP 613128P HM4816AP4 6116ALP-10 HM4816AP-4
Contextual Info: \ HITACHI IC MEMORY DATA BOOK 0 HITACHI 1 IN D EX • • • • • • Q U IC K R E F E R E N C E G U ID E TO H IT A C H I IC M EM O R IES . 8 MOS R A M .

Contextual Info: APT26F120B2 APT26F120L 1200V, 27A, 0.58Ω Max, trr ≤335ns N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft

le2 20

Abstract: le220
Contextual Info: ISOLATION TRANSFORMERS SERIES ‘LE’ LAN-ETHERNET APPLICATIONS 0.865MAX 122.5» Econom ical Low leakag e in d u ctan ce and interw in d in g capa citan ce Fast rise tim e 3n S ec typ. Low p ro file 16-pin D IP 14-p in avail. S u rface M o u n t design availab le

APT26F120B2

Abstract: APT26F120L MIC4452
Contextual Info: APT26F120B2 APT26F120L 1200V, 27A, 0.58Ω Max, trr ≤335ns N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft

2SK30

Abstract: 2sK30 fet 2SK19TM 2SK34 FET 2SK23A 2SK44SP 2sk43 3A 2SK30 2SK37 2SK33
Contextual Info: - 28 - € tt £ m & m iS f . 1 1 Jk K /È Ä V* V m m . * * (V) «• m të P d /P c h (A) * * (W) Ig s s (max) (A) Vg s (V) ^ te W (Ta=25°C) (min) (max) Vd s (V) (V) (V) (min) (max) V d s (V) (A) (A) Id (A) Q (min) (S) 1 I >>60 B -—' ü Vd s (V) Id

UPD4265

Contextual Info: SEC /¿PD4265 6 5 ,5 3 6 x 1 -BIT DYNAMIC CMOS RAM NEC Electronics Inc. Revision 1 Description Pin Configuration The NEC /UPD4265 is a 65,536-word by 1-bit d ynam ic CM O S Random Access M em ory RAM designed to operate from a single + 5 V p ow er supply. The

APT26F120B2

Abstract: APT26F120L MIC4452 DTA105
Contextual Info: APT26F120B2 APT26F120L 1200V, 26A, 0.65Ω Max, trr ≤335ns N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft

BERULUB FR 16 B

Abstract: circuit diagram of 5kw smps full bridge thyristor aeg UC3854 5kw harmer simmons BERULUB FR 16 Grease Berulub FR 16 Berulub FR 66 5kw smps pfc ups PURE SINE WAVE schematic diagram
Contextual Info: Reliability Reliability General Power semiconductors used in high power electronic equipment are exposed to different conditions compared to plastic encapsulated components applied in equipment used for communication electronics. Controlling and converting of high power

2SK68A

Abstract: 2SK44 2SK34 2SK60 2sK30 fet FET 2SK23A 2sk43 2SK30 2SK68 2SK44SP
Contextual Info: - 28 - € tt £ m & m iS f . 1 1 Jk K /È Ä V* V m m * * (A) ^ m P d /P c h . (V) «• të * * (W) Ig s s (max) (A) Vg s (V) (Ta=25°C) te W (min) (max) Vd s (V) (V) (V) (min) (max) V d s (V) (A) (A) Id (A) Q (min) (S) 1 I >>60 B -—' ü Vd s (V) Id

IXAN0017

Abstract: 0017 spot welder circuit diagram IXBH40N160 MOSFET 1600v 100A IXLH45N160 high frequency welder circuit diagram TC4431 application MOSFET 1200v 30a 108nC
Contextual Info: New 1600V BIMOSFET™ Transistors Open Up New Applications IXAN0017 by Ralph E. Locher IXYS Corporation Santa Clara, CA Introduction There are many applications today using high voltage MOSFETs and IGBTs, which would benefit from a higher voltage part. Examples are

APT26F120B2

Abstract: APT26F120L MIC4452 335ns
Contextual Info: APT26F120B2 APT26F120L 1200V, 26A, 0.65Ω Max, trr ≤335ns N-Channel FREDFET T-Max Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft

IH200

Contextual Info: O0 O ISOLATION TRANSFORMERS SERIES ‘LE’ LAN-ETHERNET APPLICATIONS • Economical ■ Low leakage inductance and interwinding capacitance ■ Fast rise time 3nSec typ. ■ Low profile 16-pin DIP 14-pin avail. ■ Surface Mount design available ■ Choice of turns ratio, 1:1 or 2:1

LE2-20

Contextual Info: ISOLATION TRANSFORMERS SERIES ‘LE’ LAN-ETHERNET APPLICATIONS 0.M5MAX 22 5 Economical Low leakage inductance and interwinding capacitance Fast rise time 3nSec typ. Low profile 16-pin DIP (14-pin avail.) Surface Mount design available Choice of turns ratio, 1:1 or 2:1

Contextual Info: ISOLATION TRANSFORMERS SERIES ‘LE' LAN-ETHERNET APPLICATIONS Primary Primary DCR Max. Indue.* ET Constant PRI SEC (±20%) (V-fiS Min) RCD Type Turns Ratio (±5%) LE1 -20 LE1-35 LE1-50 LE1-75 LE1-100 LE1 -200 1:1 1:1 1:1 1:1 1:1 1:1 20/l/H 35/jH 50/l/H

Contextual Info: ISOLATION TRANSFORMERS SERIES ‘LE’ LAN-ETHERNET APPLICATIONS Economical Low leakage inductance and interwinding capacitance Fast rise time 3nSec typ. Low profile 16-pin DIP 14-pin avail. Surface Mount design available Choice of turns ratio, 1:1 or 2:1

LE2-20

Abstract: le11
Contextual Info: ISOLATION TRANSFORMERS RESISTORS CAPACITORS COILS DELAY LINES SERIES ‘LE’ LAN-ETHERNET APPLICATIONS FEATURES 0.018±0.008 [.457±0.076] 15 13 12 10 9 . . . . . . . . . . . . . . . . . . 16 1 2 4 5 7 8 0.200 [5.08] [17.78±0.254] 7 EQUAL SPACES 0.100” ± 0.010

HM4864P-2

Abstract: HM4864-2 HM4864-3 HM4864P-3 HM4816A HM4716 hm4816A ram HM4864P HM4864 HM4816
Contextual Info: H M 4 8 6 4 - 2 , H M 4 8 6 4 - 3 - HM4864P-2, HM4864P-3 6 5 5 3 6 -word x 1-bit Dynamic Random A ccess Memory The H M 4864 is a 65,536-words by 1-bit, M O S random access memory circuit fabricated w ith H IT A C H I'S double-poly N-channel silicon gate process for high performance and high functional

BERULUB FR 16

Abstract: ixys vuo 52-16 ups PURE SINE WAVE schematic diagram Vienna Rectifier TL 82036 BERULUB FR 43 UC3858 schema inverter welding veridul BERULUB FR 16 B
Contextual Info: Application Notes & Technical Information Volume 2 Volume 1 Contents Title Page Standard IGBT "G" Series M1 - 2 What is a HiPerFET Power Mosfet? M1 - 3 New 1600 V BIMOSFET Transistors Open up New Appl. M1 - 5 Comparative Performance of BIMOSFET in FLY Back Converter Circuits

LE2-20

Abstract: le2 20 LE2-50 LE135 le220
Contextual Info: ISOLATION TRANSFORMERS SERIES ‘LE’ LAN-ETHERNET APPLICATIONS Economical Low leakage inductance and interwinding capacitance Fast rise time 3nSec typ. Low profile 16-pin DIP 14-pin avail. Surface Mount design available Choice of turns ratio, 1:1 or 2:1