35KMB Search Results

7cl6

Abstract: D-2501 CY7C161A CY7C162 CY7C162A
Contextual Info: CYPRESS SEMICONDUCTOR 4bE » B SSfl'lbfe.S □ QQbMSb b q c y p CY7C161A CY7C162A • - j/ "— = 16,384 x 4 Static RAV RAM Separate I/O SEMICONDUCTOR Features • Automatic power-down when dese­ lected • Transparent write 7C161A • CMOS for optimum speed/power

0148-t

Abstract: CY7C148 CY7C149 CY7C148-25DC up c1482 0148t L5045 CY7C148-35PC CY7C148-35DC MU 350
Contextual Info: CYPRESS SEMICONDUCTOR MbE D B DODbMll 2 5 0 ^ 2 b EÏCYP CY7C148 CY7C149 CYPRESS SEMICONDUCTOR Automatic power-down when dese­ lected 7C148 CMOS for optimum speed/power 25-ns access time Low active power — 440 mW (commercial) — 60S m\V (military) Low standby power (7C148)

K73 Package

Abstract: 3 phase inverter schematic diagram 7C166 CY7C164A CY7C166A CI64A CY7C164A-45DMB
Contextual Info: 4bE D CYPRESS SEM IC ON DU CT OR □ - p q & eSÛ'IbbE OQObMfiS 2 R3CYP .r S - l O C Y 7 C I6 4 A C Y 7 C 1 6 6 A ";ui'./^CTPRESS , _ SEMICONDUCTOR 16,384 x 4 Static R/W RAM Features Functional Description • Automatic power-down when

7C168A

Abstract: CY7C168A CY7C169A 7C168 CY7C168A-25LMB
Contextual Info: CYPRESS SEM ICOND UC TO R MhE D ^ B 250^2 GODbSlM 5 O C V P ,7 ^ CY7C168A CY7C169A <VH 'V? -O 2> CYPRESS SEMICONDUCTOR Features Automatic pow er-dow n when dese­ lected 7C168A CMOS for optimum speed/power High speed — U a = 15 n s — tACE = 10ns(7C169A)

Contextual Info: Features 32K x 8 Power-Switched and Reprogrammable PROM • Capable of withstanding > 4001V static discharge • CMOS for optimum speed/power • Windowed for reprogrammability • High speed — 25 ns commercial — 35 ns (military) • Low power — 275 mW (commercial)

Contextual Info: CY7C148 CY7C149 CYPRESS SEMICONDUCTOR 1024x4 Static RAM Functional Description • Automatic power-down when d ese­ lected 7C148 TheC Y 7C 148 a n d CY 7C149 arehigh-perform ance C M O S static R A M s organized as 1024 by 4 bits. Easy m em ory expansion

Contextual Info: CY7C191 CY7C192 " ^ cÌ press SEMICONDUCTOR Features • Automatic power-down when deselected • Transparent write 7C191 • CMOS for optimum speed/power • High speed — ‘ a a = 2 5 ns • Low active power — 880 raW • Low standby power 65,536 x 4 Static R/W RAM

33AO

Contextual Info: ss CY7C170A B>'ss c y p r e s s SEMICONDUCTOR — 4096 x 4 Static RAV RAM Features Functional Description • CMOS for optimum speed/power The CY7C170A is a high-performance CMOS static RAM organized as 4096 words by 4 bits. Easy memory expansion is provided by an active LOW chip select

7c169A

Contextual Info: CY7C168A CY7C169A CYPRESS SEMICONDUCTOR Features • Automatic power—down when dese­ lected 7C168A • CMOS for optimum speed/power • Highspeed — tAA = 15 ns — tACE = l« n s (7C169A) • Low active power — 385 mW • Low standby power (7C168)

Contextual Info: CY7C148 CY7C149 CYPRESS SEMICONDUCTOR Functional Description Automatic power-down when dese­ lected 7CI48 CMOS for optimum speed/power 25-ns access time Low active power — 440 mW (commercial) — 605 mW (military) Low standby power (7C148) — 82.5 mW (25-ns version)

CY7C128A

Abstract: 7C128 CY7C128A-45DMB CY7C128A-55DMB
Contextual Info: CYPRESS MbE D SEMICONDUCTOR • SSÖ'ibbS QÜ0b332 T -p L { W -l» WM CYPRESS SEMICONDUCTOR A utom atic pow er-dow n w hen deselected • ViH O f2.2V C M O S fo r o p tim u m speed/pow er Functional Description The CY7C128A is a high-performance CMOS static RAM organized as 2048

46E SMD CODE

Abstract: 7C271 7C274 CY7C271 CY7C274 C2716 RAAW
Contextual Info: MbE » CYPRE SS S EM ICONDUCTOR CYPRESS SEMICONDUCTOR Features • CMOS for optimum speed/power • Windowed for reprogrammability • Highspeed — 30 as commercial — 35 as (military) • Low power — 660 mW (commercial) — 715 mW (military) • Super low standby power

Contextual Info: CY7C168A CY7C169A CYPRESS SEMICONDUCTOR Features • Automatic power—down when dese­ lected 7C168A • CMOS for optimum speed/power • H ighspeed — 1 \ \ = 15 ns — t A C E = 10ns(7C 169A ) • Low active power — 385 mW • Low standby power (7C168)

Contextual Info: CY7C164A CY7C166A CYPRESS SEMICONDUCTOR Features 16,384 x 4 Static R/W RAM through I/O3 is written into the memory location specified on the address pins Ao The CY7C164A and CY7C166A are high- through A 13). performance CMOS static RAMs orga­ nized as 16,384 by 4 bits. Easy memory ex­ Reading the device is accomplished by tak­

245a

Abstract: ZCC2 CY7C L 245A
Contextual Info: CY7C245A CYPRESS SEMICONDUCTOR Features • Windowed for reprogrammability • CMOS for optimum speed/power • High speed — 15-ns max set-up • 5V ±10% VCo commercial and military • T T L -com patible I/O • Direct replacement for bipolar PR O M s

Contextual Info: CY7C291A CY7C292A/CY7C293A 'W CYPRESS = SEMICONDUCTOR Reprogrammable 2K x 8 PROM Features • Windowed for reprogrammability • CMOS for optimum speed/power • High speed — 2 0 ns commercial — 25 ns (military) • Low power — 660 mW (commercial and military)

CERAMIC LEADLESS CHIP CARRIER

Abstract: la crosse technology smd UJ 99 7C245A CY7C245A 0G152
Contextual Info: W CYPRESS Features • • W indowed for reprogram m ability • C M O S for optim um speed/power • • • H igh speed — 15-ns ad dress set-up • — 10-ns clock to output • Low power — 330 m W com m ercial for —25 ns — 660 mW (m ilitary) •

7c198

Abstract: CY7C198-55DMB 19835 CY7C198-15DMB
Contextual Info: CY7C198 _ CY7C199 CYPRESS " SEMICONDUCTOR 32,768 x 8 Static RAV RAM both LOW, data on the eight data input/ output pins I/Oo through I/O7 is written into the memoiy location addressed by the address present on the address pins (Ao through A 14). Reading the device is ac­

7C245A

Abstract: CY7C245A 02KX CY7C245A-25QMB CY7C245A-45SC CY7C245AL-35WC 2K EPROM 7C245AL-25
Contextual Info: CY7C245A 5ZSSBS' a CYPRESS .- .-. r £ S * ^ SEMICONDUCTOR Reprogrammable 2K x 8 Registered PROM Features • Windowed for reprogrammability • CMOS for optimum speed/power • High speed — 15-ns max set-up • 5V ± 10% Vcc> commercial and

7C271

Abstract: CY7C271-45WMB 333Q C271 7C274 CY7C271 CY7C274 CY7C274-55WC 57C27-1 7C271-55
Contextual Info: CY7C271 CY7C274 32K x 8 PROM PowerSwitched and Reprogrammable Features Functional Description • CMOS for optimum speed/power • Windowed for reprogrammability • High speed — 30 ns commercial — 35 ns (military) • Low power — 660 mW (commercial)

CY10E301

Abstract: 7C245A CY7C245A CLCC 64 pins footprint CY7C245A-25QMB motorola 28pin smd control board
Contextual Info: CYPRESS SEMI CONDUCTOR bSE J> 2Sf i ^t . bS 0010171 7bE CY7C245A r^ Y p p irc c ; Reprogrammable 2K x 8 Registered PROM SEMICONDUCTOR • SV ±10% V cci commercial and military Features • Windowed for reprogrammability • CMOS for optimum speed/power • High speed

CY7CI99-55KMB

Abstract: 25L54 7C198-25 7C19825 7C199-15 7C199-25 7C199-35 CY7C198 CY7C199 cy7c199-25vc
Contextual Info: CY7C198 CY7C199 CYPRESS -= s SEMICONDUCTOR Features Functional Description • Automatic power-down when deselected • CMOS for optimum speed/power ■ High speed — 25 ns • h ow active power The CY7C198 and CY7C199 are highperformance CMOS static RAM s orga­

CY7C291A

Abstract: CY7C292A CY7C293A 57C29
Contextual Info: F# CYPRESS Features • Windowed for reprogrammability • CMOS for optimum speed/power • High speed — 20 ns commercial — 25 ns (military) CY7C291A CY7C292A/CY7C293A 2K X 8 Reprogrammable PROM • Direct replacement for bipolar PROMs • Capable o f withstanding >2001V stat­

C1985

Contextual Info: CY7C198 CY7C199 CYPRESS W SEMICONDUCTOR F unctional D escription Automatic power-down when deselected CMOS for optimum speed/power High speed — 25 os Low active power — 880 mW Low standby power — 220 raW TTL-compatible inputs and outputs Capable o f w ithstanding greater than