36N50 Search Results

I 508 V

Contextual Info: Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFR 36N50P VDSS ID25 RDS on trr ISOPLUS247TM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 500 V = 24 A ≤ 200 mΩ Ω ≤ 250 ns (Electrically Isolated Back Surface) Symbol

123B16

Contextual Info: Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFH 36N50P IXFT 36N50P IXFV 36N50P VDSS ID25 RDS on = 500 V = 36 A Ω = 170 mΩ N-Channel Enhancement ModeAvalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS VDGR

36n50P

Abstract: PLUS220SMD V36N50P
Contextual Info: Advance Technical Information PolarHVTM Power MOSFET N-Channel Enhancement ModeAvalanche Rated Fast Intrinsic Diode VDSS ID25 IXTH 36N50P IXTT 36N50P IXTQ 36N50P IXTV 36N50P IXTV 36N50PS RDS on = 500 V = 36 A Ω = 170 mΩ TO-3P (IXTQ) Symbol Test Conditions

Contextual Info: PolarHVTM Power MOSFET IXTH 36N50P IXTQ 36N50P IXTT 36N50P IXTV 36N50P IXTV 36N50PS N-Channel Enhancement Mode Avalanche Rated VDSS ID25 RDS on = 500 V = 36 A Ω ≤ 170 mΩ TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 150° C

ixys ixtn 36n50

Abstract: 36N50 IXTN 36N50 C IXYS 36N50 ac motor forward reverse control ixtn36n50 IXTN 36N50
Contextual Info: IXYS_ MegaMOS FET IXTN 36N50 VDSS = 500 V U = 36A DS on — 12 Q N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings v DSS T j =2 5°C to 150°C 500 V V 0GR T j = 2 5 °C to 150°C; RGS= 10ki2 500 V Vos Continuous 120 V v GSM

plus220smd

Abstract: 36N50P IXFH36N50P
Contextual Info: Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFH 36N50P IXFT 36N50P IXFV 36N50P IXFV 36N50PS N-Channel Enhancement ModeAvalanche Rated Fast Intrinsic Diode VDSS ID25 = 500 V = 36 A Ω = 170 mΩ RDS on TO-247 AD (IXFH) (TAB) Symbol Test Conditions

36n50P

Abstract: 36N50 IXTH36N50P 4515 n 36n50P equivalent QG SMD TRANS IXTV36N50P PLUS220SMD IXTQ36N50P FS25
Contextual Info: PolarHVTM Power MOSFET IXTH 36N50P IXTQ 36N50P IXTT 36N50P IXTV 36N50P IXTV 36N50PS N-Channel Enhancement Mode Avalanche Rated VDSS ID25 RDS on = 500 V = 36 A ≤ 170 mΩ Ω TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 150° C

36N50P

Abstract: IXTQ36N50P
Contextual Info: Advanced Technical Information IXTQ 36N50P IXTT 36N50P PolarHVTM Power MOSFET VDSS ID25 = 500 V = 36 A ≤ 170 mΩ Ω RDS on N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ

IXFH36N50P

Abstract: 36N50PS 36N50 36n50P PLUS220SMD
Contextual Info: PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFH 36N50P IXFT 36N50P IXFV 36N50P IXFV 36N50PS VDSS ID25 RDS on trr = 500 V = 36 A ≤ 170 mΩ Ω ≤ 200 ms TO-247 AD (IXFH) Symbol Test Conditions Maximum Ratings

Contextual Info: PolarHVTM HiPerFET Power MOSFET VDSS = 500 ID25 = 19 RDS on ≤ 190 ≤ 200 trr IXFC 36N50P IXFR 36N50P (Electrically Isolated Back Surface) V A mΩ ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings

Contextual Info: Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFH 36N50P IXFT 36N50P IXFV 36N50P VDSS ID25 RDS on = 500 V = 36 A Ω = 170 mΩ N-Channel Enhancement ModeAvalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS VDGR

36n50P

Abstract: ISOPLUS247
Contextual Info: Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFC 36N50P IXFR 36N50P VDSS ID25 = = RDS on ≤ ≤ trr (Electrically Isolated Back Surface) 500 18 190 250 V A Ω mΩ ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol

36N50

Abstract: 36N50P ISOPLUS247
Contextual Info: PolarHVTM HiPerFET Power MOSFET IXFC 36N50P IXFR 36N50P VDSS = 500 ID25 = 19 RDS on ≤ 190 ≤ 200 trr (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C

36n50P

Contextual Info: Advanced Technical Information IXTQ 36N50P IXTT 36N50P PolarHVTM Power MOSFET VDSS ID25 = 500 V = 36 A ≤ 170 mΩ Ω RDS on N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ

SmD TRANSISTOR a77

Abstract: vienna rectifier ixys dsei 2x30-06c P6139 IXTN 36N50 C p6139a 36N50 2x30-06c IXYS VUM25-E PFC 2.5kw
Contextual Info: D e s ig n a n d E x p e r im e n ta l I n v e s tig a tio n o f a T h r e e - P h a s e H ig h P o w e r D e n s it y H ig h E ffic ie n c y U n it y P o w e r F a c to r P W M V I E N N A R e c tifie r E m p lo y in g a N o v e l I n te g r a te d P o w e r S e m ic o n d u c to r M o d u le

75N1

Abstract: 6n80 IXTM20N60 IRFP 260 M ixfh K 15N60 42N20 ixtn 44N50 KS 4400 204 3B
Contextual Info: HiPerF ET Power MOSFETs ?D g UE D f N-Channel Enhancement-Mode with Fast Intrinsic Diode Type V DSS max. ► New ► IXFH 76N07-11 ► IXFH 76N07-12 IXFH IXFH IXFH IXFH IXFH 67N10 75N10 42N20 50N20 58N20 V 70 100 200 IXFH 35N30 IXFH 40N30 300 IXFH IXFH

40n80

Abstract: 13NB0 60N60 dsei 20-12 33N120 VUO 35-12 N 0 7 DS117-12A DS117-12 26n60 4410PI
Contextual Info: Alphanumerical Index c CS CS CS CS CS CS CS CS CS CS CS CS CS CS 142-12 ¡08 142-16 io8 23-08 ¡02 23-12 ¡02 23-16 ¡02 300-12 io3 300-16 io3 35-08 ¡04 35-12 ¡04 35-14 ¡04 72-12 ¡08 72-16 ¡08 8-08 ¡02 8-12 ¡02 18 18 18 18 18 18 18 18 18 18 18 18 18

BERULUB FR 16 B

Abstract: circuit diagram of 5kw smps full bridge thyristor aeg UC3854 5kw harmer simmons BERULUB FR 16 Grease Berulub FR 16 Berulub FR 66 5kw smps pfc ups PURE SINE WAVE schematic diagram
Contextual Info: Reliability Reliability General Power semiconductors used in high power electronic equipment are exposed to different conditions compared to plastic encapsulated components applied in equipment used for communication electronics. Controlling and converting of high power

2n60p

Abstract: gsm based speed control of single phase induction motor thyristor family 48N60 600v 20 amp mosfet 14n60 300V HiPerFET power MOSFET single die MOSFET Wireless A.C motor speed controlling system IXYS SCR MODULE Gate Drive 15N60P
Contextual Info: 2005 / 1 IXYS NEWS MSC IGBT Module Line to include Economical Small 6Pack Incorporating Latest NPT3 and Trench IGBT Technologies IXYS announced that in keeping up with ambitious growth plans in the IGBT market, its European Operation, a leader in Direct Copper Bond

36N50

Abstract: IXTN 36N50 C N36N50 ixys ixtn 36n50 IXTN36N50
Contextual Info: MegaMOS FRED 36N50 V DSS = 500 V lD26 = 36 A ^ D S o n = 0 -1 2 N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings v DSS Tj = 25°C to 150°C V Tj = 25°C to 150°C; RGS = 10 500 V 500 V Continuous +20 V T ransient ±30 V ^□25 Tc = 25°C

7n60b

Abstract: 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80
Contextual Info: Alphanumerical Index A AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 C CS 142-12io8 CS 142-16io8 CS 19-08ho1 CS 19-08ho1S CS 19-12ho1 CS 19-12ho1S CS 20-12io1 CS 20-14io1 CS 20-16io1 CS 23-08io2 CS 23-12io2 CS 23-16io2 CS 300-12io3 CS 300-16io3 CS 300-18io3

IXTN 36N50 C

Abstract: ixys ixth 21N50 mosfet irfp 250 N c226 C278 C2100 13N110 C258 IRFP ixys ixtn 36n50
Contextual Info: n ix Y S Standard UOSFET T-Series \ Contents v DSS max ^D^cont C= 25 °C TO-247 □ DS on) Tc = 25 °C TO-220 (IXTP) TO-263 (IXTA) TO-264 miniBLOC (DON) Page ♦ V A £i 100 67 75 0.025 0.02 IXTH 67N10 IXTH 75N10 C2-4 200 30 0.085 IRFP 250 C2-8 50 0.045 IXTH 50N20

IRFP 260 M

Abstract: 5n100 6n80 42n20 12N50A IRFP IXTN 36N50 C 67N10 irfp 240
Contextual Info: Standard Power MOSFETs and MegaMOS FETs N-Channel Enhancement-Mode Tjh = ► New IXTH IXTH IRFP IXTH IXTH IRFP IXTH IXTH IXTH IRFP IXTH IRFP IXTH ► IXTH IXTH IXTH ► IXTH ► IXTU ►IXTU IXTH IXTH IXTH IXTH IXTH IXTH IXTH IXTH IXTH IXTH IXTH IXTH IXTH

36N50

Abstract: IXYS 36N50 IXTN 36N50 C ixys ixtn 36n50 193H IXTN36N50
Contextual Info: MegaMOS FRED 36N50 VDSS = 500 V •□25 = 3 6 A ^ D S o n = 0 -1 2 N-Channel Enhancement Mode Symbol Test Conditions v ¥ d ss Tj = 25°C to 150°C 500 V V och Tj = 25°C to 150°C; RGS = 10 k£2 500 V V GS Continuous +20 V v T ransient ±30 V 36