Untitled
Abstract: No abstract text available
Text: 40 PIN PLASTIC ZIP 475mil A N M 1 Q 40 K F G Y V M H J W J NOTE Each lead centerline is located within 0.25 mm (0.01 inch) of its true position (T.P.) at maximum material condition. ITEM MILLIMETERS INCHES A 51.23 MAX. 2.017 MAX. F 0.50±0.10 0.020 +0.004
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475mil)
P40V-100-475A-1
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Untitled
Abstract: No abstract text available
Text: 6.2 17.5 Unit : mm 1.6 5.8 LB - 068 Length : 523±2.0 +0.3 Thickness : 0.7−0.2 Tolerance : ±0.4 Material : Plastic with antistatic finish Applied Package Quantity 24pin Plastic ZIP (475mil) 16 40pin Plastic ZIP (475mil) 10
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24pin
475mil)
40pin
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Untitled
Abstract: No abstract text available
Text: 40 PIN PLASTIC SHRINK ZIP 475mil N 40 Y K 1 Q M A V 2°~6° J F G H M I W P40VF-70-475A NOTE Each lead centerline is located within 0.25 mm (0.010 inch) of its true position (T.P.) at maxi– mum material condition. ITEM MILLIMETERS INCHES A 36.22 MAX. 1.426 MAX.
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475mil)
P40VF-70-475A
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micro servo 9g
Abstract: uPa2003 micro servo 9g tower pro 2SK1060 uPD3599 201 Zener diode 2SK2396 upc1237 infrared sensor TSOP - 1836 2SK518
Text: The export of these products from Japan is regulated by the Japanese government. The export of some or all of these products may be prohibited without governmental license. To export or re-export some or all of these products from a country other than Japan may also be prohibited without a license from that country. Please call
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V20HL,
V25HS,
V30HL,
V30MX,
V35HS,
V40HL,
V50HL,
V55PI,
X10679EJDV0SG00
micro servo 9g
uPa2003
micro servo 9g tower pro
2SK1060
uPD3599
201 Zener diode
2SK2396
upc1237
infrared sensor TSOP - 1836
2SK518
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4N500
Abstract: IC 741 cn
Text: b427555 GG42530 Tfc.7 « N E C E / / MOS INTEGRATED CIR CU IT ju P D 4 2 S 1 6 1 9 0 , 4 2 S 1 7 1 9 0 , 4 2 S 1 8 1 9 0 16 M B IT D Y N A M IC RAM FA S T PA G E M O D E & B Y T E W R IT E M O DE - P R E LIM IN A R Y -D E S C R IP T IO N
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b427555
GG42530
uPD42S16190
uPD42S17190
uPD42S18190
475mil)
P32VF-100-475A
P32VF-100-475A
4N500
IC 741 cn
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transistor sl 431
Abstract: ZIP40-P-475
Text: O K I Sem iconductor M S M 5 1 4 1 9 0 / S L _ 262,144-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM514190/SL is a new generation Dynamic RAM organized as 262,144-word x 18-bit configuration. The technology used to fabricate theMSM51419 0 /SL is OKI's CMOS silicon gate process technology.
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MSM514190/SL_
144-Word
18-Bit
MSM514190/SL
theMSM514190/SL
cycles/16ms,
transistor sl 431
ZIP40-P-475
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AA 170 circit diagram
Abstract: 256KX16 MSM5416256 ucas zip
Text: Technical Information OKI Semiconductor MSM5416256/MSM54V16256 ¿ Lo w voltage version or V-voreion _ 262,144 Words x 16 Bits GRAPHICS BURST A C C ESS MEMORY
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MSM5416256/MSM54V16256
MSM5416256
256KX16
MSM54
DQ8-15
b72M2M0
b7S424D
AA 170 circit diagram
MSM5416256 ucas zip
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Untitled
Abstract: No abstract text available
Text: blE D • MM^baG3 G0E32fi0 1T4 ■ H I T 2 H M 5 1 4 1 9 0 , H M 5 1 4 1 9 0 L S e r i e s -262,144-word x 18-bit Dynamic Random Access Memory HITACHI/ LOGIC/ARRAYS/ NEM The Hitachi HM 514190 are CM OS dynamic RAM organized as 262,144-w ord x 18-bit. HM 514190
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G0E32fi0
144-word
18-bit
144-w
18-bit.
400-mil
40-pin
475-mil
400mil
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Untitled
Abstract: No abstract text available
Text: FEB 16 1993 November 1992 Edition 1.0 FUJITSU DATA SHEET MB8117100-60/-70/-80 „ CMOS 16Mx 1 BIT FAST PAGE MODE DYNAMIC RA CMOS 16,777,216 x 1 Bit Fast Page Mode Dynamic RAM The Fujitsu MB8117100 is a fully decoded CMOS Dynamic RAM DRAM that contains a total of
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MB8117100-60/-70/-80
MB8117100
096-bits
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Untitled
Abstract: No abstract text available
Text: FE«? i 6 '553 October 1992 Edition 3.0 FUJITSU DATA SHEET M B 8 1 1 6 1 0 1-60/-70/-80 CMOS 16Mx 1 BIT NIBBLE MODE DYNAMIC RAM CMOS 16,777,216 x 1 BIT Nibble Mode Dynamic RAM The Fujitsu MB8116101 is a fully decoded CM O S Dynamic RAM DRAM that contains a total of
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MB8116101
096-bits
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Untitled
Abstract: No abstract text available
Text: FÉB i 6 1993 November 1992 Edition 1.0 FUJITSU DATA SHEET MB8117400-60/-70/-80 CMOS 4M x 4 BIT FAST PAGE MODE DYNAMIC RAM CMOS 4,194,304 x 4 BIT Fast Page Mode Dynamic RAM The Fujitsu MB8117400 is a fully decoded CMOS Dynamic RAM DRAM that contains 16,777,216
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MB8117400-60/-70/-80
MB8117400
196-bits
MB81Fujitsu
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HM514280AJ7
Abstract: HM514280AJ-7 hm514280
Text: blE I • m lb 203 0023114 535 ■ H IT S HM514280A/AL Series -HM51S4280A/AL Series 262,144-word x 18-bit Dynamic Random Access Memory HITACHI/ The Hitachi HM514280A/AL are CMOS dynamic RA M o rg an ized as 2 6 2 ,1 4 4 -w o rd x 18-bit. HM 514280A/AL have realized higher density,
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HM514280A/AL
--------------HM51S4280A/AL
144-word
18-bit
18-bit.
14280A/AL
400mil
HM514280AJ7
HM514280AJ-7
hm514280
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GG41
Abstract: No abstract text available
Text: April 1993 Edition 2.1 FUJITSU DATA S H E E T M B 8 1 8 2 5 1 -70/-80 2097,152 Bits 262,144 x 8 Bits Multi-port CMOS Dynamic RAM The Fujitsu MB818251 is a fully decoded dual port CMOS Dynamic RAM (DRAM) organized as 262,144 words by 8 bits dynamic RAM port and 512 words by 8 bits serial
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MB818251
400mil
40-pin
475mil
44-pin
MB818251
GG41
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7006C
Abstract: TOA8
Text: '- / Ú - FUJITSU S3E L TD 3 7 4 cl75b G D 0 3 3 S S D .2 3 ^ /7 TOb » F C A J June 1992 Edition 1.0 FUJITSU DATA SHEET M B 8 1 4 2 6 0 A -70/-80/-10 CMOS 256K X 16 BIT FAST PAGE MODE DYNAMIC RAM CMOS 262,144 x 16 bit Fast Page Mode Dynamic RAM The Fujitsu MB814260A is a fully decoded CMOS Dynamic RAM DRAM that contains 4,194,304
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MB814260A
16-bit
16-bits
MB814260A-70/-80/-10
7006C
TOA8
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Untitled
Abstract: No abstract text available
Text: ADVANCE M T4C 10016/7 16 MEG x1 DRAM FAST PAGE MODE: MT4C10016 STATIC COLUMN: MT4C10017 FEATURES • Industry standard xl pinout, timing, functions and packages • High performance, CMOS silicon gate process • Single power supply: +5V±10% or +3.3V±10%
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MT4C10016
MT4C10017
250mW
4096-cycle
475mil)
400mil)
MT4C10016/7
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY M IC R O N 256K WIDE DRAM X MT4C16260/1 16 WIDE DRAM 256K X 16 DRAM FEATURES • Industry-standard x l6 pinouts, timing, functions and packages • A ddress entry: ten row-addresses, eight columnaddresses • High-performance CMOS silicon-gate process
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MT4C16260/1
500mW
024-cycle
MT4C16261
40-Pin
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256kx16 ucas zip
Abstract: No abstract text available
Text: Technical Information OKI Semiconductor MSM5416256/MSM54V16256 {Standard-version _ Lowvoltago vflrsionor V-voremn)_ 262,144 Words x 16 Bits GRAPHICS BURST ACCESS MEMORY GENERAL DESCRIPTION The MSM5416256 is a high speed 256KX16 configuration burst access memory for high performance
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MSM5416256/MSM54V16256
MSM5416256
256KX16
MSM54
DQ8-15
245MG
256kx16 ucas zip
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IC MARKING A60
Abstract: IC 741 cn
Text: fa427S25 0D452bl *NECE MOS INTEGRATED CIRCUIT /¿ P D 4 2 S 1 6 9 0 0 L ,4 2 S 1 7 9 0 0 L 16 M BIT D Y N A M IC RAM 3 .3 V FAST PAGE M O DE P R E L IM IN A R Y DESCRIPTIO N The NEC # PD42S16900L and n PD42S17900L are 2 097 152 words by 9 b its dynamic CMOS RAM
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fa427S25
0D452bl
uPD42S16900L
uPD42S17900L
//PD42S16900L)
b427525
004EbBL>
475mil)
P32VF-100-475A
P32VF-100-475A
IC MARKING A60
IC 741 cn
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LE347
Abstract: toba Q 0265 R HS 8180 42S18180
Text: L427S2S DQ4 2 4 M4 b 70 • NECE MOS INTEGRATED CIRCUIT ju P D 4 2 S 1 6 1 8 0 ,4 2 S 1 7 1 8 0 ,4 2 S 1 8 1 8 0 16 M BIT D Y N A M IC RAM FAST PAGE M O D E & BYTE R E A D /W R IT E M ODE - P R E LIM IN A R Y -D ESCRIPTIO N
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L427S2S
uPD42S16180
uPD42S17180
uPD42S18180
475mil)
P32VF-100-475A
LE347
toba
Q 0265 R
HS 8180
42S18180
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UPD4216402
Abstract: No abstract text available
Text: NEC pPD4216402, 4217402 4,194,304 X 4-Bit Dynamic CMOS RAM NEC Electronics Inc. Advance Information Description The /JPD4216402 and the /JPD4217402 are staticcolumn dynamic RAMs organized as 4,194,304 words by 4 bits and designed to operate from a single +5-volt
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uPD4216402
/JPD4217402
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Untitled
Abstract: No abstract text available
Text: AW i « »02 O rd& r & M U T o c\'b f\ HM514270, HM514270L Series Preliminary 262,144-word x 16-blt Dynamic Random Access Memory ^ H I T A T he H itachi H M 514270/L are CMOS dynamic R A M o rg a n iz e d as 2 6 2 ,1 4 4 -w o rd x 16-bit. HM514270/L have realized higher density, higher
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HM514270,
HM514270L
144-word
16-blt
514270/L
16-bit.
HM514270/L
400-mil
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Untitled
Abstract: No abstract text available
Text: ADVANCE M T4C 1672 64K x 16 DRAM DRAM FAST PAGE MODE, DUAL CAS FEATURES • Industry standard xl6 pinouts, timing, functions and packages • High performance, CMOS silicon gate process • Single +5V±10% power supply • Low power, 3mW standby; 350mW active, typical
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350mW
256-cycle
100ns
400mil)
475mil)
40-Pin
DQ9-DQ16)
MT4C1672
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TRW catalogue
Abstract: No abstract text available
Text: MI T S U B I S H I M E M O R Y / A S I C blE D • b S MT ñH S D D 1 7 b l 2 2T1 ■ MITI MITSUBISHI LSIs M S M W ^ y O J . L J P . R T - e . ^ r Ö . - e S r y S . - S S s p jx FAST PAGE MODE 4194304-BIT(262144-WORD BY 16-BIT)DYNAMIC RAM DESCRIPTION This is a family of 262144-word by 16-bit dynamic RAMs,
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4194304-BIT
262144-WORD
16-BIT
40P5P
40pin
475mil
24Tfl5S
M5M4V4170J
TRW catalogue
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STR06
Abstract: No abstract text available
Text: MITSUBISHI M E M O R Y / A S I C blE D • b 2 4 cifiSS O O l V b ? 1* 5 3 ^ ■ M I T I M ITSUBISHI L S Is M 5 M 4 V 4 2 6 0 J , L , T P , R T - 6 , - 7 , - 8 , - 6 S , - 7 S , - 8 S FAST PAGE MODE 4194304-BIT (262144-WORD BY 16-BIT) DYNAMIC RAM \T A f i
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4194304-BIT
262144-WORD
16-BIT)
16-bit
M5M4V4260J
44P3W-E
STR06
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