4843 Search Results

IRF530N

Abstract: AN7254 AN7260 AN9321 AN9322 TB334
Contextual Info: IRF530N TM Data Sheet March 2000 File Number 4843 22A, 100V, 0.064 Ohm, N-Channel Power MOSFET Packaging Features JEDEC TO-220AB SOURCE DRAIN GATE DRAIN FLANGE • Ultra Low On-Resistance - rDS(ON) = 0.064Ω, VGS = 10V • Simulation Models - Temperature Compensated PSPICE and SABER

Sanyo STK

Abstract: STK 4 channel amp STK 3 channel amp stk 4803 stk 4813 POWER AMP. IC STK stk 4843 STK SANYO STk 4833 4853 G
Contextual Info: STK 4773 Output Middle Point Voltage STK 4793 STK 4803 STK 4813 STK 4833 V n EQ U IV A LEN T CIRCUIT 10 5 11 9 STK4773, 4793, 4803, 4813, 4833, 4843, 4853 APPLICATION 2-channel 10 to 30Wmin A F power amp. +vcc STK4773, 4793, 4803, 4813, 4833, 4843, 4853 STK

SD4842P

Abstract: sd4841p sd4842 SD4842P67K65 sd484 sd4844p SD4843 Sd4841
Contextual Info: SD4840/4841/4842/4843/4844 CURRENT MODE PWM CONTROLLER WITH BUILT-IN HIGH VOLTAGE MOSFET DESCRIPTION SD4840/4841/4842/4843/4844 is a current mode PWM controller with low standby power and low start current for power switch. In standby mode, the circuit enters burst mode to reduce the standby

Contextual Info: IRF530 TM Data Sheet February 2001 File Number 4843.1 22A, 100V, 0.064 Ohm, N-Channel Power MOSFET Packaging Features JEDEC TO-220AB • Ultra Low On-Resistance - rDS ON = 0.064Ω, VGS = 10V SOURCE DRAIN GATE • Simulation Models - Temperature Compensated PSPICE and SABER

2SC2038

Abstract: 4835 4816 2SD1415 4808 4828 4833 2SC4328 2SC4516 2sc4834
Contextual Info: - 200 - a tt « 2SC 4810 2 SC 4811 2SC 4815 2SC 4816 2SC 4817 2 SC 4818 2SC 4835 2SC 4836 2SC 4837 2SC 4839 2SC 4840 2SC 4841 2SC 2SC 2SC 2SC 2SC 2SC 4842 4843 4844 4845 4846 4847 2SC 4848 2SC 4849 2SC 4850 2SC 2SC 2SC 2SC 2SC 4851 4852 4853 4854 4855 H ft

STK 5 channel amp

Abstract: 4793 STK4843 stk 4803 stk power amp 4843 stk 4833 4833 stk 4843 stk 4813
Contextual Info: S TK 4773 Output Middle Point Voltage STK 4793 S TK 4803 S TK 4813 STK 4833 Vn EQ U IV A LEN T C IR C U IT 10 5 11 9 STK4773, 4793, 4803, 4813, 4833, 4843, 4853 APPLICATION 2-channel 10 to 30Wmin A F power amp. +vcc STK4773, 4793, 4803, 4813, 4833, 4843, 4853

Contextual Info: CAMBION Wearnes Cambion LTD â Castleton, Hope Valley, Derbyshire, S33 8WR, England Telephone: +44 0 1433 621555 Fax: +44(0)1433 621290 Web: www.cambion.com Email: enquiries@cambion.com Technical Data Sheet 572-4843, Insulated solder terminal, turret type

4843

Contextual Info: 4050 Clog white Size 34 - 48 upper material in leather, perforated adjustable heel and instep strap cork insole without innerlining anti-slip: DIN 4843 part 100 ESD-conform according to DIN 61340 CE A, ORO Sanitized ist eine Schutzmarke der SANITIZED Marketing AG, CHLizenz Nr. 1000.97

4843

Abstract: bedok
Contextual Info: BATTERY CONNECTOR Low Profile – 5 Position mm _ inch PART NUMBER: BC05-4843 SPECIFICATIONS: • Housing Material: High temperature thermoplastic, UL flammability rating 94 V-0. Color, black. • Contact Material: High performance copper alloy. • Contact Finish: 1.0 µm 40 µ" min. palladium nickel with 0.125 µm (4.9 µ") minimum gold

irf530

Abstract: 929E-10 IRF530 fairchild
Contextual Info: IRF530 Data Sheet February 2001 File Number 4843.1 22A, 100V, 0.064 Ohm, N-Channel Power MOSFET [ /Title IRF53 0 /Subject (22A, 100V, 0.064 Ohm, NChannel Power MOSFET) /Autho r () /Keywords (Intersil, semiconductor, 22A, 100V, 0.064 Ohm, NChannel Power

Contextual Info: Instruction Sheet SMA Straight Cable Plugs Direct Solder Attachment 1050805-1 and 1050807-1 408-4843 13 DEC 11 Rev B CABLE PLUG PART NUMBER CURRENT PREVIOUS MILITARY PART NUMBER M39012/92 1050805-1 2001-8901-92 B 3001 1050807-1 2001-8911-92 B 3001 (No Safety Wire Holes)

SD4842P

Abstract: sd4841p sd4844p sd4840p SD4843P SD4840 mosfet 4842 sd4842 sd4841p67k65 SD4842P67K65
Contextual Info: SD4840/4841/4842/4843/4844 内置高压MOSFET电流模式PWM控制器系列 描述 SD4840/4841/4842/4843/4844是用于开关电源的内置 高压MOSFET电流模式PWM控制器系列产品。 该电路待机功耗低，启动电流低。在待机模式下，电

SD4842P

Abstract: sd4843p SD4843 SD4840P67K65
Contextual Info: SD4840/4841/4842/4843/4844 CURRENT MODE PWM CONTROLLER WITH BUILT-IN HIGH VOLTAGE MOSFET DESCRIPTION SD4840/4841/4842/4843/4844 is a current mode PWM controller with low standby power and low start current for power switch. In standby mode, the circuit enters burst mode to reduce the standby

Contextual Info: CAMBION Wearnes Cambion LTD  Castleton, Hope Valley, Derbyshire, S33 8WR, England Telephone: +44 0 1433 621555 Fax: +44(0)1433 621290 Web: www.cambion.com Email: enquiries@cambion.com Technical Data Sheet 572-4843 Insulated solder terminal, Turreted How to order code

Contextual Info: DECIMAL EQUIVALENTS OF PARTS OF AN INCH .015625 .03125 .046875 .0625 .078125 .09375 .109375 .125 .140625 .15625 .171875 .1875 .203125 .21875 .234375 .25 .265625 .28125 .296875 .3125 .328125 .34375 .359375 .375 .390625 .40625 .421875 .4375 .453125 .46875 .484375

Contextual Info: Euro Series Conversion Chart Decimal inches/Millimeters Decimal Inches .0156 .0312 .0469 .0625 .0781 .094 .1093 .1250 .1406 .1562 .1718 .1875 .2031 .2187 .2343 .2500 .2656 .2812 .2968 .3125 .3281 .3437 .3593 .3750 .3906 .4062 .4218 .4375 .4531 .4687 .4843

576779

Abstract: instruction sheet 576778 peek stratotherm 734641-2 654182 4G178 91549-1 47386 Tool 47386 AMP
Contextual Info: General Hand Tool Types Revised: April 2009 CERTI-CRIMP II SAHT Standard Straight Action Hand Tool Design Widely used in the Aircraft and Military industries Image representative of type only Features: Fixed dies Straight action jaw closure Ratchet mechanism ensures complete crimp cycle

p281

Abstract: P28-1 TRANSISTOR P281
Contextual Info: polyfet rf devices P281 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base

F2246

Contextual Info: polyfet rf devices F2246 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base

PRF134

Contextual Info: polyfet rf devices PRF134 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI,

F2211

Contextual Info: polyfet rf devices F2211 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base

F2248

Contextual Info: polyfet rf devices F2248 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base

PRF136

Contextual Info: polyfet rf devices PRF136 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI,

Contextual Info: polyfet rf devices LR301 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.