4FL554S2 Search Results

4AF Series

Abstract: 8AF4 4af05 international rectifier 137
Contextual Info: ~55 INTERNATIONAL RECTIFIER 4855452 IN T E R N A T IO N A L I F|4fl554SS □DOMciB4 3 55C R E C T IF IE R 04934 Data Sheet No. PD-2.086 r~ o i - t ? ' f ï &i'¿a IOR INTERNATIONAL RECTIFIER 4AF, 8AF SERIES S5 and 50 Amp Pressfit Rectifier Diodes Major Ratings and Characteristics

s30ef

Abstract: s30efh
Contextual Info: 4855452 INTERNATIONAL RE IO R 73 D | L i a s s e 0G07D37 0 Data Sheet No. PD-3.158 in t e r n a t io n a l r e c t if ie r INTERNATIONAL R E C T I F I E R 73 D e | 4 S S S 4 S E 0007D37 □ | S30EF & S30EFH SERIES 400-200 VOLTS RANGE STANDARD TURN-OFF TIME 8 / j s

Contextual Info: International P D - 9.1032 ^R ectifier IRGPC30U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Features • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve

Contextual Info: IOR IRFF Series Devices IRFF Series Data Sheet T h e IR F F D a ta S h e e t d escrib es 19 d evices, 12 N -C h a n n e l and 7 P -C h a n n e l, all con tain ed in the T O -2 0 5 A F T O -3 9 p ac k a g e . T his d a ta s h e e t is a rra n g e d to show com m on tab u la r and g raphical

21dq

Contextual Info: DE 1 4 f l 5 5 4 5 5 4855452 0D05041 5 | ~ 55C INTERNATIONAL RECTIFIER 05 04 1 D Data Sheet No. PD-2 .0 5 3 A T - INTERNATIONAL RECTIFIER o 3 - 3 IÖ R 11DQ, S1DQ AND 31DQ SERIES 1 to 3 Amp Schottky Barrier Rectifiers Description/Features Major Ratings and Characteristics

Contextual Info: 4 Ö 5 5 4 5 2 D O I S T SE International i“R RectifioI N T E R N A T I O N A L R E C T I F I E R OST I bâE HEXFET Power MOSFET • • • • • • • Dynamic dv/dt Rating Surface Mount IRLR014 Straight Lead (IRLU014) Available in Tape & Reel Logic-Level Gate Drive

Contextual Info: P D - 9.1025 bitemational [ïôrIRectifier_ IRGPF20F INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT Features • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency curve

THYRISTOR BST N 45 B 90

Abstract: thyristor bst m 45 90 Thyristor bst 2 HALF WAVE 45 E 57 20-C1V thyristor YS 160 004 11111I D226 diode irkt91-18 L9500 thyristor bt 3A
Contextual Info: i * fl5 5 4 5 2 International ü ^jRectifier □ O lbb'JO GOfl IIN R s e r ie s ir k . 26 , .41, .56 , .71, .91 HIGH VOLTAGE THYRISTOR/ DIODE ADD-A-pak Power Modules and THYRISTOR/ THYRISTOR Features IN T E R N A T IO N A L R E C T IF IE R • ■ E le c tric a lly iso lated b a s e plate

Contextual Info: International !“R Rectifier 4Û5SM5S QQlSlflM 302 • INR PD’9835 IRFI9520G HEXFET Power MOSFET • • • • • • • INTERNATIONAL RECTIFIER bSE D Isolated Package High Voltage lsolation= 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm P-Channel

Contextual Info: IO R Data Sheet No. PD-3.115 INTERNATIONAL R E C T IF IE R OE 4855452 IN TERN ATIO N AL R E C T I F I E R o DE I 4ÖSS4S5 0D07Ö1? 3 |~ 02E 07817 S77R SERIES 2000-1400 VOLTS RANGE 4800 AMP RMS, RING AMPLIFYING GATE PHASE CONTROL TYPE HOCKEY PUK SCRs VOLTAGE RATINGS

6CW 82

Contextual Info: INTERNATIONAL RECTIFIER bSE D Mfl5S145E 0G17DÔ2 433 • INR PD-2.314 International SRectifier 6c w q o s f 6cw qo6f SCHOTTKY RECTIFIER 6.6 Amp Major Ratings and Characteristics Description/Features 6CWQ.F Units lF AV Rectangular 6.6 A 50/60 V waveform VRRM

IR8200B

Contextual Info: INTERNATIONAL RECTIFIER b5E D • 4ß55452 QQlfllbS 413 ■ INR Data Sheet No. PD-6.012A INTERNATIONA!. RECTIFIER I O R IR8200B 3A, 5 5 V DMOS H-BRIDGE POWER INTEGRATED CIRCUIT 11-PIN MOLDED SIP General Description Features The IR8200B is a 3A H-Bridge designed for motion

uaa 3100

Contextual Info: X ^ R IN TER N A TIO N A L R E C T IF IE R • 4Ô55M52 DQIOIHS 4 ■ ~T~Ò \“ Ä R77R SERIES 3000-2400 VOLTS RANGE 3800 AMP AVG HOCKEY PUK DIFFUSED JUNCTION RECTIFIER DIODES VOLTAGE RATINGS_ : s î t • i s j J 1 ¡ PART

PG44

Contextual Info: 73 INTERNATIONAL RECTIFIER IO R d T | 4fl55455 ODDbTMl O Data Sheet No. PD-3.142 in t e r n a t io n a l , r e c t i f i e r S23DF & S23DFH SERIES 400-200 VOLTS RANGE STANDARD TURN-OFF TIME 8 fjs 270 AMP RMS, RING AMPLIFYING GATE INVERTER TYPE STUD MOUNTED SCRs

2N7219

Abstract: 555C IRFM240 JANTXV2N7219 2N7219 JANTX
Contextual Info: Data Sheet No. PD-9.555C INTERNATIONAL RECTIFIER I« R REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR IRFM840 8N7S19 JANTX2N7219 "‘ JANTXV2N7219 N-CHANNEL [REF: M IL-S-19500/5S6] Product Summary 200 Volt, 0.18 Ohm HEXFET The HEXFET® technology is the key to International

Contextual Info: International [^Rectifier Data Sheet No. PD-6.011C IR2110 HIGH AND LOW SIDE DRIVER Product Summary Features • Floating channel designed for bootstrap operation Fully operational to +500V Tolerant to negative transient voltage dV/dt immune ■ Gate drive supply range from 10 to 20V

Contextual Info: International [i^RjRectifier PD -2.237A 81CNQ. SERIES SCHOTTKY RECTIFIER 80Amp Desciption/Features Major Ratings and Characteristics C haracteristics Ifiav Rectangular waveform V rrm 81CNQ. Units 80 A 35, 40, 45 V 4600 A 0.54 V -55 to 175 °C The 81CNQ center tap Schottky rectifier module has been

55C05

Abstract: 50HQ020
Contextual Info: INTERNATIONAL RECTIFIER 4855452 "55 4 355455 0005103 55C 05 103 INTERNATIONAL RECTIFIER D Data Sheet No. PD-2.032D INTERNATIONAL RECTIFIER X O R 50HQ, 1N6097 & 38 SERIES 50 and 60 Amp Schottky Power Rectifiers Major Ratings and Characteristics Characteristic

2N7236

Abstract: M6554 mosfet K 1377 IRFM9140 transistor 3et 2sc 1740 transistor 2SC 1384
Contextual Info: Data Sheet No. PD-9.495D INTERNATIONAL RECTIFIER IO R REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR P-CHANNEL IRFM914Q 2N 7236 JANS2IM7236 JAIMTX2N723G JANTXV2N7236 R -100 Volt, 0.20 Ohm HEXFET The HEXFET® technology is the key to International

Contextual Info: Preliminary Data Sheet 6 .0 5 6 A International I R Rectifier IR6216 INTELLIGENT HIGH SIDE MOSFET POWER SWITCH Features • • • • • • • • • • Current Limit for Short Circuit Protection Over-Temperature Protection Active Output Negative Clamp

Contextual Info: HE D I MÖSS4S2 GD007t.t, t. | T - ÌT - /S Data Sheet No. PD-9.456B INTERNATIONAL RECTIFIER INTERNATIONAL RECTIFIER IÖ R REPETITIVE AVALANCHE AND dv/dt RATED* HEXFEF TRANSISTORS IRFP340 IRFP341 N-CHANNEL POWER MÜSFETs TG-S47AC PACKAGE IRFP342 IRFP343 400 Volt, 0.55 Ohm HEXFET

C713 diode

Abstract: c714 diode
Contextual Info: International ioriRectifier PD - 9.1112 IRGPC30UD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Features V ces = 600V • Switching-loss rating includes all "tail" losses • HEXFRED soft ultrafast diodes • Optimized for high operating frequency over 5kHz

Contextual Info: PD - 9.689A International BRectifier IRGBC30F INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT Features • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency curve

Contextual Info: Bulletin 120205 International S»r]Rectifier 12F R SERIES STANDARD RECOVERY DIODES Stud Version Features H igh su rg e cu rre n t c a p a b ility A va la n ch e typ e s a va ila b le S tud c a th o d e and stud a n o d e ve rs io n W id e cu rre n t range