4N39 OPTO Search Results

Photo SCR

Abstract: in5060 IN5060 diode Transistor SC1460 rgk 13 4N40 SCR TRIGGER PULSE circuit 4N39 SC1460 4N39-4N40
Contextual Info: PHOTO SCR OPTOCOUPLERS DESCRIPTION 4N39 4N40 The 4N39 and 4N40 have a gallium-arsenide infrared emitting diode optically coupled with a light activated silicon controlled rectifier in a dual in-line package. FEATURES • • • • 10 A, T2L compatible, solid state relay

4N40

Abstract: solid state relay 220v 10a 4N39 IN5060 SC1460 4N39-4N40 Transistor SC1460
Contextual Info: PHOTO SCR OPTOCOUPLERS DESCRIPTION 4N39 4N40 The 4N39 and 4N40 have a gallium-arsenide infrared emitting diode optically coupled with a light activated silicon controlled rectifier in a dual in-line package. FEATURES • • • • 10 A, T2L compatible, solid state relay

IN5060 diode

Abstract: 45010 4N40 in5060 4N39 AN40 SC1460
Contextual Info: PHOTO SCR OPTOCOUPLERS DESCRIPTION 4N39 4N40 The 4N39 and AN40 have a gallium-arsenide infrared emitting diode optically coupled with a light activated silicon controlled rectifier in a dual in-line package. FEATURES • • • • 10 A, T2L compatible, solid state relay

MDM-200

Abstract: VDE110b MOTOROLA SCR driver 4N39 MOTOROLA 4n40
Contextual Info: MOTOROLA SEM ICONDUCTOR TECHNICAL DATA 4N39 4N40 6-Pin DIP Optoisolators S C R Output These devices consist of a gallium-arsenide infrared emitting diode optically coupled to a photo sensitive silicon controlled rectifier SCR . They are designed for applications

C1959

Abstract: C1957 transistor c1959 transistor IN5060 diode C1957 St1602 C1958 c1959 Y transistor transistor c1959 in5060
Contextual Info: [*u PHOTO SCR OPTOCOUPLERS OPTOELECTRONICS 4N394N40 DESCRIPTION The 4N39 and 4N40 have a gallium-arsenide infrared emitting diode optically coupled with a light activated silicon controlled rectifier in a dual in-line package. FEATURES & APPLICATIONS High efficiency, low degradation, liquid epitaxial LED

Contextual Info: Infineon technologies 4N39 Photo SCR Optocoupler ^ FEATURES • Turn On Current /pj , 5.0 mA Typical • Gate Trigger Current (/ qt )< 20 mA • Surge Anode Current, 10 Amp • Blocking Voltage, 200 VACPK • Gate Trigger Voltage (VGT), 0.6 Volt • Isolation Voltage, 5300 VRMS

PHOTO SCR OPTOCOUPLER

Abstract: SCR TRIAC 4N39
Contextual Info: 4N39 Photo SCR Optocoupler FEATURES • Turn On Current IFT , 5.0 mA Typical • Gate Trigger Current (IGT), 20 mA • Surge Anode Current, 10 Amp • Blocking Voltage, 200 VACPK • Gate Trigger Voltage (VGT), 0.6 Volt • Isolation Voltage, 5300 VRMS • Solid State Reliability

BT1603

Abstract: si2112 ae rw solid state relay 220V st1602 T100R T100R-C 4N4U
Contextual Info: [* q PHOTO SCR OPTOCOUPLERS m u in m m 4N394N40 ib fi The 4N39 and 4N40 have a gallium-arsenide infrared emitting diode optically coupled with a light activated silicon controlled rectifier in a dual in-line package. • ■ • ■ ■ 0.41 DIMENSIONS IN mm

PHOTO SCR OPTOCOUPLER

Abstract: 4N39 opto Opto scr Photo SCR 4N39
Contextual Info: 4N39 Photo SCR Optocoupler FEATURES • Turn On Current IFT , 5.0 mA Typical • Gate Trigger Current (IGT), 20 mA • Surge Anode Current, 10 Amp • Blocking Voltage, 200 VACPK • Gate Trigger Voltage (VGT), 0.6 Volt • Isolation Voltage, 5300 VRMS • Solid State Reliability

4N39 opto

Abstract: PHOTO SCR OPTOCOUPLER 4N39
Contextual Info: 4N39 Photo SCR Optocoupler FEATURES • Turn On Current IFT , 5.0 mA Typical • Gate Trigger Current (IGT), 20 mA • Surge Anode Current, 10 Amp • Blocking Voltage, 200 VACPK • Gate Trigger Voltage (VGT), 0.6 Volt • Isolation Voltage, 5300 VRMS • Solid State Reliability

sci46d

Contextual Info: [s O PHOTO SCR OPTOCOUPLERS OPTOELECTRONICS 4N394N40 DESCRIPTION The 4N39 and 4N40 have a gallium-arsenide infrared emitting diode optically coupled with a light activated silicon controlled rectifier in a dual in-line package. FEATURES & APPLICATIONS High efficiency, low degradation, liquid epitaxial LED

PHOTO SCR OPTOCOUPLER

Abstract: 4N39 12 volt 10 amp relay
Contextual Info: 4N39 PHOTO SCR OPTOCOUPLER FEATURES • Turn On Current IFT , 5.0 mA Typical • Gate Trigger Current (IGT), 20 mA • Surge Anode Current, 10 Amp • Blocking Voltage, 200 VACPK • Gate Trigger Voltage (VGT), 0.6 Volt • Isolation Voltage, 5300 VACRMS

Contextual Info: 4N39 Vishay Semiconductors Optocoupler, PhotoSCR Output, 200 V VRM, 10 A surge current Features • • • • • • • • • Turn on current IFT , 5.0 mA Typical Gate Trigger current (IGT), 20 µA Surge Anode current, 10 Amp Blocking voltage, 200 V

Contextual Info: 4N39 VISHAY Vishay Semiconductors Photo SCR Optocoupler Features • • • • • • • • Turn on current IFT , 5.0 mA Typical Gate Trigger current (IGT), 20 µA Surge Anode current, 10 Amp Blocking voltage, 200 V Gate Trigger voltage (VGT), 0.6 Volt

SIEMENS 1FT

Contextual Info: SIEMENS 4N39 A PHOTO SCR OPTOCOUPLER Package Dimensions in Inches mm FEATURES • Turn On Current (Ipj), 5.0 mA Typical • Gate Trigger Current (Iqt)> 20 mA • Surge Anode Current, 10 Amp • Blocking Voltage, 200 VACPK • Gate Trigger Voltage (VQT), 0.6 Volt

IEC60965

Abstract: 4n39
Contextual Info: 4N39 VISHAY Vishay Semiconductors Optocoupler, PhotoSCR Output, 200 V VRM, 10 A surge current Features • • • • • • • • Turn on current IFT , 5.0 mA Typical Gate Trigger current (IGT), 20 µA Surge Anode current, 10 Amp Blocking voltage, 200 V

PHOTO SCR OPTOCOUPLER

Abstract: 4N39 VDE0884
Contextual Info: 4N39 VISHAY Vishay Semiconductors Optocoupler, PhotoSCR Output, 200 V VRM, 10 A surge current Features • • • • • • • • Turn on current IFT , 5.0 mA Typical Gate Trigger current (IGT), 20 µA Surge Anode current, 10 Amp Blocking voltage, 200 V

Contextual Info: 4N39 Photo SCR Optocoupler FEATURES Turn On Current Dimensions in Inches mm ( / f t ), 5.0 m A Typical Gate Trigger Current (/GT), 20 mA Surge Anode Current, 10 Amp Blocking Voltage, 200 VACPK G ate Trigger Voltage ( V g t )> 0.6 Volt Isolation Voltage, 5300 VRMS

4N40

Abstract: MR5060 scr bt series 200 A 4N39 IEC204A VDE0113 VDE0160 VDE0832 VDE0833 scr optoisolator
Contextual Info: MOTOROLA SEM ICONDUCTOR TECHNICAL DATA 4N39 4N40 6-Pin D IP O p to iso la to rs SCR Output These devices consist o f a gallium -arsenide infrared em itting diode optically coupled to a photo sensitive silicon controlled rectifier SCR . They are designed fo r applications

4n4001

Abstract: 4N4U 4N40 4N39 GE SCR 1000
Contextual Info: G E SOLI» STATE DÌ 3fl7S0fll DDlltflS 0 optoelectronic specification« 7 W /-Î7 ” Photon Coupled Isolator 4N39,4N40 SVM0OI Ga As Infrared Em itting Diode & Light Activated SCR A B C The GE Solid State 4N39 and 4N40 consist of a gallium arsenide, infrared emitting diode coupled with a light activated silicon con­

Contextual Info: Schematics and Specifications 6-Pin Package Photo SCR Output; DC Threshold Sensing Input ANODE 1 6 GATE CATHODE 2 5 ANODE NC 3 IFT* mA max VTM (V) max VDRM (V) min IDM (µA) max IH (mA) max VISO ACRMS (kV) 1 minute 4N39 14 1.3 200 50 1.0 5.3 4N40 14 1.3

4N40

Abstract: Photo SCR 4N39 2n9622 H11C4 H11C5 H11C6 H11C1 H11C2 H11C3
Contextual Info: Optoelectronics Products Photo SCR Output; DC Threshold Sensing Input IFT* mA VTM(V) VDRM(V) IDM(µA) IH(mA) Max Max Min Max Max VISOACRMS (kV) 1 minute 4N39 14 1.3 200 50 1.0 5.3 4N40 14 1.3 400 150 1.0 5.3 H11C1 11 1.3 200 50 — 5.3 H11C2 11 1.3 200 50

Siemens optocoupler

Contextual Info: 4N39 SIEMENS FEATURES • Turn On Current Ipj . 5.0 m A Typical • Gate Trigger Current ( I G t ) . 20 m A • Surge Anode Current, 10 Amp • Blocking Voltage, 200 VACPK • Gate Trigger Voltage ( V G t ) . 0.6 Volt • Isolation Voltage, 5300 VACRMS • Solid State R eliability

Contextual Info: Optoisolator Specifications 4N39, 4N40 Optoisolator GaAs Infrared Emitting Diode and Light Activated SCR M IN M AX. 2 ao 1 a m p ere 6 volts 0fc.5 012 9 53 3 43 6 86 2 92 6 10 m illiw a tts m illiam p s 090 2 16 305 ; .203 2 54 INFRARED EM ITTING DIODE M AX.