MOC3001
Abstract: MOC3000 scr optoisolator mr5060 SCR GATE DRIVER IEC204AXK VDE0113 VDE0160 VDE0832 VDE0833
Text: MOTOROLA • i SEMICONDUCTOR TECHNICAL DATA M OC3000 MOC3001 6-P in D IP O p to is o la to rs S C R Output These devices consist of gallium-arsenide infrared emitting diode optically coupled to a photo sensitive silicon controlled rectifier SCR . They are designed for applications
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E54915
IEC380/VDE0806,
IEC435/VDE0805,
IEC65/VDE0860,
VDE110b,
30A-02
MOC3001
MOC3000
scr optoisolator
mr5060
SCR GATE DRIVER
IEC204AXK
VDE0113
VDE0160
VDE0832
VDE0833
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4N40
Abstract: MR5060 scr bt series 200 A 4N39 IEC204A VDE0113 VDE0160 VDE0832 VDE0833 scr optoisolator
Text: MOTOROLA SEM ICONDUCTOR TECHNICAL DATA 4N39 4N40 6-Pin D IP O p to iso la to rs SCR Output These devices consist o f a gallium -arsenide infrared em itting diode optically coupled to a photo sensitive silicon controlled rectifier SCR . They are designed fo r applications
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E54915
IEC380/VDE0806,
IEC435/VDE0805,
IEC65VDE0860,
c0nr6urat10n
30A-02
4N40
MR5060
scr bt series 200 A
4N39
IEC204A
VDE0113
VDE0160
VDE0832
VDE0833
scr optoisolator
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UJT-2N2646 PIN DIAGRAM DETAILS
Abstract: speed control of dc motor using ujt scr c107m TRANSISTOR equivalent UJT pin diagram 2N2646 1000w inverter PURE SINE WAVE schematic diagram TY6008 triac ot 239 class d 1000w amplifier inverter welder 4 schematic thyristor zo 402
Text: Theory and Applications Chapters 1 thru 9 Selector Guide Data Sheets Outline Dimensions and Leadform Options Index and Cross Reference E (g ) M OTOROLA THYRISTOR DATA Prepared by Technical Information Center This second edition of the Thyristor Data Manual has been revised extensively to reflect
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Semi260
TY510
TY6004
TY6008
TY6010
TY8008
TY8010
2N6394
MCR218-8
UJT-2N2646 PIN DIAGRAM DETAILS
speed control of dc motor using ujt scr
c107m TRANSISTOR equivalent
UJT pin diagram 2N2646
1000w inverter PURE SINE WAVE schematic diagram
TY6008
triac ot 239
class d 1000w amplifier
inverter welder 4 schematic
thyristor zo 402
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IEC-204
Abstract: motorola transistor cross IEC204
Text: GlobalOptoisolator Motorola’s optolsolators satisfy the broad range of regulatory requirements Imposed throughout the world. “Global" optolsolators are y o u r “ passport" to the world marketplace. Motorola 6-PIN DIP Optolsolators Feature: • “Global" Safety Regulatory Approvals: VDE 1 , UL, CSA, SETI, SEMKO, DEMKO, NEMKO,
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IEC950/VDE0806
VDFE0805,
IEC65/VDE0860,
VDE110b,
IEC204/VDE0113,
VDE0160,
VDE0832,
VDE0833.
MOC8104S)
MOC8104SR2)
IEC-204
motorola transistor cross
IEC204
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IEC-204
Abstract: IEC204 Optoisolators VDE-0860 MOC8104F
Text: GLOBAL OPTOISOLATORS •<j VTT y There Is no need to worry about meeting the broad range of requirements Imposed throughout the world. With Motorola optolsolators, your marketplace is indeed global. Motorola 6-PIN DIP Optoisolators Feature: • "Global” Safety Regulatory Approvals: VDE 1 , UL, CSA, SETI, SEMKO, DEMKO, NEMKO,
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IEC950/VDE0806
VDFE0805,
IEC65/VDE0860,
VDE110b,
IEC204/VDE0113,
VDE0160,
VDE0832,
VDE0833.
MOC8104S
MOC8104F)
IEC-204
IEC204
Optoisolators
VDE-0860
MOC8104F
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEM ICO NDUCTO R TECHNICAL DATA 4N25 4N25A 4N26 4N27 4N28 6-P in D IP O p to is o la to rs Transistor Output These devices co n sist o f a g a lliu m arsenide infrare d e m ittin g d io d e o p tic a lly co up le d to a m o n o lith ic silico n p h o to tra n s is to r detector.
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E54915
IEC380/VDE0806,
IEC435/VDE0805,
IEC65/VDE0860,
VDE110b,
30A-02
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VDE0860
Abstract: IEC435 VDE0113 VDE0160 VDE0805 VDE0832 VDE0833 VDE0883 OPTO-ISOLATOR optoisolator MCT2E
Text: MOTOROLA • i S E M IC O N D U C TO R TECHNICAL DATA M C T2 M CT2E 6-P in D IP O p to is o la to rs Transistor Output These device s co n s is t o f a g a lliu m arsen id e in fra re d e m ittin g d io d e o p tic a lly c o u p le d to a m o n o lith ic s ilic o n p h o to tra n s is to r dete cto r.
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E54915
IEC380/VDE0806,
IEC435
VDE0805,
IEC65/VDE0860,
VDE110b,
IEC204//^
VDE0113,
VDE0160,
VDE0832,
VDE0860
VDE0113
VDE0160
VDE0805
VDE0832
VDE0833
VDE0883
OPTO-ISOLATOR
optoisolator MCT2E
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MOC1005
Abstract: MOC1006 VQE 24 led VDE0113 VDE0160 VDE0832 VDE0833 transistor J5X
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MOC1005 M O C 1006 6-P in D IP O p to is o la to rs Transistor O utput These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector. • • •
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E54915
IEC380/VDE0806,
IEC435/VDE0805,
IEC65/VDE0860,
VDE110b,
IEC204/
VDE0113,
VDE0160,
VDE0832,
VDE0833,
MOC1005
MOC1006
VQE 24 led
VDE0113
VDE0160
VDE0832
VDE0833
transistor J5X
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H11D1
Abstract: H11D3 VDE0113 VDE0160 VDE0832 VDE0833 VDE0883
Text: MOTOROLA SE M IC O N D U C TO R TECHNICAL DATA H11D 1 H 11 D 2 H 11 D 3 H 11D 4 6 -P in D IP O p to is o la to rs Transistor Output . . . co n s is t o f g a lliu m -a rs e n id e in fra re d e m ittin g d io d e s o p tic a lly c o u p le d to h ig h v o lta g e ,
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H11D1
H11D3
E54915
IEC380/VDE0806,
IEC435/VDE0805,
IEC65/VDE0860,
VDE110b,
30A-02
VDE0113
VDE0160
VDE0832
VDE0833
VDE0883
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H11GX
Abstract: GE H11G1 H11G2 H11G1 IEC204 VDE0113 VDE0160 VDE0832
Text: MOTOROLA •i SEMICONDUCTOR TECHNICAL DATA H11G1 H11G2 H11G3 6-Pin DIP O ptoisolators Darlington Output . . . consists of gallium -arsenide IREDs optically coupled to silicon photodarlington detec tors which have integral base-emitter resistors. The on-chip resistors improve higher
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H11G1
H11G2
H11G1,
H11G2,
H11G3
50-VOLT,
H11Gx
H11Gx
GE H11G1
H11G2
H11G1
IEC204
VDE0113
VDE0160
VDE0832
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MQC8100
Abstract: motorola ic 6116 ci 6116 VDE0113 VDE0160 VDE0832 VDE0833 optoisolator IC Opto-isolator
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 6 -P in D IP O p to is o la to r MOC8100 Transistor Output This device co nsists o f a g a lliu m a rsen id e in fra re d e m ittin g d io d e o p tic a lly c o u p le d to a m o n o lith ic silico n p h o to tra n s is to r d ete cto r. It is d e sig n e d fo r a p p lic a tio n s re q u irin g lo w
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E54915
IEC380/VDE0806,
IEC435/VDE0805,
IEC65/VDE0860,
VDE110b,
IEC20lc
30A-02
MQC8100
motorola ic 6116
ci 6116
VDE0113
VDE0160
VDE0832
VDE0833
optoisolator IC
Opto-isolator
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transistor KJJ
Abstract: H11A41 VDE0860 H11A1 VDE0113 VDE0160 VDE0832 VDE0833
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA H11A1 thru H11A5 6-P in D IP O p to is o la to rs Transistor Output These device s co n s is t o f a g a lliu m a rsen id e in fra re d e m ittin g d io d e o p tic a lly c o up le d to a m o n o lith ic s ilic o n p h o to tra n s is to r detector.
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E54915
IEC380/VDE0806,
IEC435/VDE0805,
IEC65/VDE0860,
VDE110b,
IEC204/,
VDE0113,
VDE0160,
VDE0832,
VDE0833,
transistor KJJ
H11A41
VDE0860
H11A1
VDE0113
VDE0160
VDE0832
VDE0833
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MDM-200
Abstract: VDE110b MOTOROLA SCR driver 4N39 MOTOROLA 4n40
Text: MOTOROLA SEM ICONDUCTOR TECHNICAL DATA 4N39 4N40 6-Pin DIP Optoisolators S C R Output These devices consist of a gallium-arsenide infrared emitting diode optically coupled to a photo sensitive silicon controlled rectifier SCR . They are designed for applications
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IEC380/VDE0806,
IEC435/VDE0805,
IEC65/VDE0860,
30A-02
MDM-200
VDE110b
MOTOROLA SCR driver
4N39 MOTOROLA
4n40
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Motorola Application Note AN-780A
Abstract: motorola an780a motorola AN-780A MOC3Q12 AN-780A MOC3011 MQC3011 parallel triac MOC3011 MQC3010 Application Note AN-780A
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 6-Pin DIP Optoisolators Triac Driver Output These devices consist of gallium-arsenide infrared emitting diodes, optically coupled to silicon bilateral switch and are designed for applications requiring isolated triac trig
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IEC380/VDE0806,
IEC435/VDE0805,
IEC65/VDE0860,
VDE110b,
IEC204/Vvx
VDE0113,
VDE0160,
VDE0832,
VDE0833,
MOC3Q12
Motorola Application Note AN-780A
motorola an780a
motorola AN-780A
MOC3Q12
AN-780A MOC3011
MQC3011
parallel triac
MOC3011
MQC3010
Application Note AN-780A
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Untitled
Abstract: No abstract text available
Text: MOTOROLA • i S E M IC O N D U C T O R TECHNICAL DATA 6-P in D IP O p to is o la to r MOC8100 Transistor O utpu t T h is device co nsists o f a g a lliu m arsen id e in fra re d e m ittin g d io d e o p tic a lly c o u p le d to a m o n o lith ic silico n p h o to tra n s is to r detector. It is desig n ed fo r a p p lic a tio n s re q u irin g lo w
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E54915
IEC380/VDE0806,
IEC43n
30A-02
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verin
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA H11C1 H11C2 H11C3 6-P in D IP O p to is o la to rs SCR Output These devices co n s is t o f g a lliu m -a rs e n id e infrare d e m ittin g d io d e s o p tic a lly c o u p le d to p h o to se n sitive s ilic o n c o n tro lle d re ctifie rs SCR . T hey are d e s ig n e d fo r a pp licatio n s
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E54915
30A-02
verin
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