JESD51-9
Abstract: LTM8025 345KHZ 8025 LGA-70
Text: LTM8025 36V, 3A Step-Down µModule Regulator FEATURES DESCRIPTION n The LTM 8025 is a 36VIN, 3A step down Module® converter. Included in the package are the switching controller, power switches, inductor and all support components. Operating over an input voltage range of 3.6V to 36V, the
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LTM8025
36VIN,
LTM8025
200kHz
LTM4604A
LTM4606
LTM8020
200mA,
LTM8022/LTM8023
LTM8027
JESD51-9
345KHZ
8025
LGA-70
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Untitled
Abstract: No abstract text available
Text: LTM8025 36V, 3A Step-Down µModule Regulator FEATURES n n n n n n n n n n DESCRIPTION Complete Step-Down Switch Mode Power Supply Wide Input Voltage Range: 3.6V to 36V Up to 3A Output Current Parallelable for Increased Output Current 0.8V to 24V Output Voltage
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LTM8025
200kHz
LTM8025
LTM8020
200mA,
LTM8022/LTM8023
LTM8027
8025fa
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8025F
Abstract: JESD51-9 LTM8025 18v 1a transformer
Text: LTM8025 36V, 3A Step-Down µModule Converter FEATURES DESCRIPTION n The LTM 8025 is a 36VIN, 3A step down Module® converter. Included in the package are the switching controller, power switches, inductor and all support components. Operating over an input voltage range of 3.6V to 36V, the
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LTM8025
36VIN,
LTM8025
200kHz
LTM4606
LTM8020
200mA,
LTM8022
LTM8023
8025f
8025F
JESD51-9
18v 1a transformer
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Untitled
Abstract: No abstract text available
Text: LTC3261 High Voltage, Low Quiescent Current Inverting Charge Pump DESCRIPTION FEATURES n n n n n n n 4.5V to 32V VIN Range Inverting Charge Pump Generates –VIN 60 A Quiescent Current in Burst Mode Operation Charge Pump Output Current Up to 100mA 50kHz to 500kHz Programmable Oscillator
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LTC3261
100mA
50kHz
500kHz
12-Pin
100mA
LTC3251
500mA
MS10E
LTC3252
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lt0412
Abstract: No abstract text available
Text: LTC3261 High Voltage, Low Quiescent Current Inverting Charge Pump DESCRIPTION FEATURES n n n n n n n 4.5V to 32V VIN Range Inverting Charge Pump Generates –VIN 60 A Quiescent Current in Burst Mode Operation Charge Pump Output Current Up to 100mA 50kHz to 500kHz Programmable Oscillator
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LTC3261
100mA
500kHz
50kHz
12-pin
MS10E
DFN12
lt0412
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Schottky Diode 40V 2A
Abstract: NEC schottky diode product List CRG16GT TEMSVB21c106m8r Schottky Diode B29 capacitor 0.2uf 50v GRM39F103Z50PT TEMSVB21 RK73K1JTD 1a4 capacitor
Text: µ PD72872 Reference Design Document Number: SSG-Z-140 • The information in this document is current as of December, 2000. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or
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PD72872
SSG-Z-140
GRM39F105Z10PT
TEMSVB21A226M8R
TEMSVB21C106M8R
TESVD21A226M12R
GHM1525B472K250
SLF10145T-471MR47
DSX630G24R576MHZ
NFM4516P13C204F
Schottky Diode 40V 2A
NEC schottky diode product List
CRG16GT
TEMSVB21c106m8r
Schottky Diode B29
capacitor 0.2uf 50v
GRM39F103Z50PT
TEMSVB21
RK73K1JTD
1a4 capacitor
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1N4148 SMD PACKAGE
Abstract: 1N4148 equivalent SMD 1N4148 sod123 Diode Equivalent 1n4148 1N4148 DL-35 equivalent for ZENER DIODE 1N4148 1N4148 SMD sot23 PACKAGE 1n4148 smd diode smd 1a 100v diode bridge Panasonic PPS film
Text: HV9906DB3 Off-Line PFC Current Source Controller Introduction Features The Supertex HV9906DB3 demo board is a power factor corrected PFC LED driver using the HV9906 IC. The power converter topology of the demo board consists of an input buck-boost stage and an output
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HV9906DB3
HV9906DB3
HV9906
SMD1206
SMD0805
1N4148 SMD PACKAGE
1N4148 equivalent SMD
1N4148 sod123
Diode Equivalent 1n4148
1N4148 DL-35
equivalent for ZENER DIODE 1N4148
1N4148 SMD sot23 PACKAGE
1n4148 smd diode
smd 1a 100v diode bridge
Panasonic PPS film
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1N4148 sod123
Abstract: 1N4148 equivalent SMD Diode Equivalent 1n4148 1N4148 SMD PACKAGE DL-41 package equivalent for ZENER DIODE 1N4148 Diode Equivalent 1n4148 bridge diode 1N4148 SMD 1N4148 DL-35 Panasonic PPS film
Text: HV9906DB3 Off-Line PFC Current Source Controller Introduction Features The Supertex HV9906DB3 demo board is a power factor corrected PFC LED driver using the HV9906 IC. A power converter of the demo board consists of an input buck-boost stage and an output buck stage.
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HV9906DB3
HV9906DB3
HV9906
HV9906
SMD1206
SMD0805
1N4148 sod123
1N4148 equivalent SMD
Diode Equivalent 1n4148
1N4148 SMD PACKAGE
DL-41 package
equivalent for ZENER DIODE 1N4148
Diode Equivalent 1n4148 bridge
diode 1N4148 SMD
1N4148 DL-35
Panasonic PPS film
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MOSFET 50V 100A TO-220
Abstract: UF840 UF840L-TA3-T UF840-TA3-T UF840-TF3-T
Text: UNISONIC TECHNOLOGIES CO., LTD UF840 MOSFET 8A, 500V, 0.85Ω, N-CHANNEL POWER MOSFET 1 DESCRIPTION TO-220 The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters,
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UF840
O-220
O-220F
UF840L
UF840-TA3-T
UF840L-TA3-T
QW-R502-047
MOSFET 50V 100A TO-220
UF840
UF840L-TA3-T
UF840-TA3-T
UF840-TF3-T
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 7N60 MOSFET 7.4 Amps, 600/650 Volts N-CHANNEL MOSFET 1 DESCRIPTION The UTC 7N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche
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O-220
O-220F
7N60L
QW-R502-076
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7N60
Abstract: OF 7N60 7n60 mosfet 7N60L 7N60L-TA3-T 7N60-TA3-T 7N60-TF3-T
Text: UNISONIC TECHNOLOGIES CO., LTD 7N60 Power MOSFET 7.4 Amps, 600 Volts N-CHANNEL MOSFET 1 DESCRIPTION The UTC 7N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche
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O-220
O-220F
7N60L
QW-R502-076
7N60
OF 7N60
7n60 mosfet
7N60L
7N60L-TA3-T
7N60-TA3-T
7N60-TF3-T
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2n60
Abstract: 2N60 TO-251 UTC 2n60 equivalent 2n60 MOSFEt 2N60-TA3-T 2N60L utc 2n60l 2N60-TF3-T 2N60-TM3-T 2N60-TA
Text: UNISONIC TECHNOLOGIES CO., LTD 2N60 Power MOSFET 2 Amps, 600 Volts N-CHANNEL MOSFET 1 TO- 251 1 DESCRIPTION The UTC 2N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged
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O-220
QW-R502-053
2n60
2N60 TO-251 UTC
2n60 equivalent
2n60 MOSFEt
2N60-TA3-T
2N60L
utc 2n60l
2N60-TF3-T
2N60-TM3-T
2N60-TA
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2N60B
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 2N60 MOSFET 2Amps, 600/650 Volts N-CHANNEL MOSFET 1 TO- 251 1 DESCRIPTION The UTC 2N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged
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O-220
QW-R502-053
2N60B
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 2N60 MOSFET 2Amps, 600/650 Volts N-CHANNEL MOSFET 1 TO- 251 1 DESCRIPTION The UTC 2N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged
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O-220
QW-R502-053
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1N60 MOSfet
Abstract: 1N60 diode 1N60-TM3-T 1N60 diode 1n60 1N60-TA3-T c25 diode to220 c25 mosfet 1N60L-TF3-T 1N60L
Text: UNISONIC TECHNOLOGIES CO., LTD 1N60 Power MOSFET 1.2 Amps, 600 Volts N-CHANNEL MOSFET 1 TO- 251 1 DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche
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O-220
QW-R502-052
1N60 MOSfet
1N60 diode
1N60-TM3-T
1N60
diode 1n60
1N60-TA3-T
c25 diode to220
c25 mosfet
1N60L-TF3-T
1N60L
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 12N60K-MT Power MOSFET 12A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 12N60K-MT are N-Channel enhancement mode power field effect transistors MOSFET which are produced using UTC’s proprietary, planar stripe, DMOS technology.
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12N60K-MT
12N60K-MT
QW-R502-B06
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 12N60K-MT Preliminary Power MOSFET 12A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 12N60K-MT are N-Channel enhancement mode power field effect transistors MOSFET which are produced using UTC’s proprietary, planar stripe, DMOS technology.
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12N60K-MT
12N60K-MT
O-220F2
QW-R502-B06
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 12N70K-MT Power MOSFET 12A, 700V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 12N70K-MT are N-Channel enhancement mode power MOSFET which are produced using UTC’s proprietary, planar stripe, DMOS technology. These devices are suited for high efficiency switch mode power
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12N70K-MT
12N70K-MT
QW-R205-028
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 3N70K-MK Power MOSFET Preliminary 3A, 700V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 3N70K-MK is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a
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3N70K-MK
3N70K-MK
QW-R205-012
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 12N90 Power MOSFET 12A, 900V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 12N90 is an N-channel enhancement mode power MOSFET useing UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is specialized in
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12N90
12N90
QW-R5020-593.
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 12N60 Power MOSFET 12A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 12N60 are N-Channel enhancement mode power field effect transistors MOSFET which are produced using UTC’s proprietary, planar stripe, DMOS technology.
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12N60
12N60
QW-R502-170
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 10N75 Preliminary Power MOSFET 10A, 750V N-CHANNEL POWER MOSFET 1 TO-220 DESCRIPTION The UTC 10N75 is a N-channel mode power MOSFET using UTC’s advanced technology to provide costomers with planar stripe and DMOS technology. This technology specialized in allowing a
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10N75
O-220
10N75
O-220F
O-220F1
QW-R502-501
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12N60L
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 12N60 Power MOSFET 12A, 600V N-CHANNEL POWER MOSFET 1 DESCRIPTION The UTC 12N60 are N-Channel enhancement mode power field effect transistors MOSFET which are produced using UTC’s proprietary, planar stripe, DMOS technology.
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12N60
O-220
12N60
O-220F
O-220F1
QW-R502-170
12N60L
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12N60G
Abstract: 12N60
Text: UNISONIC TECHNOLOGIES CO., LTD 12N60 Power MOSFET 12A, 600V N-CHANNEL POWER MOSFET 1 1 TO-220F TO-220F1 FEATURES * RDS ON = 0.8Ω @VGS = 10 V * Ultra low gate charge ( typical 42 nC ) * Low reverse transfer capacitance ( CRSS = typical 25 pF ) * Fast switching capability
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12N60
O-220F
O-220
12N60
O-220F1
O-262
QW-R502-170
12N60G
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