50W RF POWER TRANSISTOR Search Results

Contextual Info: NPTB00050 Not recommended for new designs Contact applications@nitronex.com for questions or support Gallium Nitride 28V, 50W RF Power Transistor Not Recommended for New Designs FEATURES • Optimized for broadband operation from DC - 4000MHz • 50W P3dB CW narrowband power

NPTB00050B

Contextual Info: NPTB00050 Not recommended for new designs Contact applications@nitronex.com for questions or support Gallium Nitride 28V, 50W RF Power Transistor Not Recommended for New Designs FEATURES • Optimized for broadband operation from DC - 4000MHz • 50W P3dB CW narrowband power

NPTB00050

Abstract: NPTB00050B Gan on silicon substrate EAR99 ELXY ELXY630ELL271MK25S 12061C103KAT2A nds 40 JESD22-A114 JESD22-A115
Contextual Info: NPTB00050 Datasheet Gallium Nitride 28V, 50W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for broadband operation from DC - 4000MHz • 50W P3dB CW narrowband power • 25W P3dB CW broadband power from

NTE325

Contextual Info: NTE325 Silicon NPN RF Power Transistor 50W @ 30MHz Description: The NTE325 is a silicon NPN RF power transistor in a T72H type package designed for power amplifier applications in industrial, commercial, and amateur radio equipment to 30MHz. Features: D Specified 12.5V, 30MHz Characteristics:

RD70HVF1

Abstract: uhf power transistor 50W RD70HVF RD70HVF1-101 High frequency P MOS FET transistor 010PF 175MHz70W 071J RF Transistor Selection 100OHM
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD70HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz70W 520MHz,50W OUTLINE DESCRIPTION DRAWING 25.0+/-0.3 RD70HVF1 is a MOS FET type transistor specifically

RD70HVF

Abstract: rd70 RD70HVF1 RD70HVF1-101 100OHM 071J 1695 GP 1
Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD70HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz70W 520MHz,50W DESCRIPTION OUTLINE RD70HVF1 is a MOS FET type transistor specifically designed for VHF/UHF High power amplifiers

RD70HVF

Contextual Info: < Silicon RF Power MOS FET Discrete > RD70HVF1 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz70W 520MHz,50W DESCRIPTION OUTLINE RD70HVF1 is a MOS FET type transistor specifically designed for VHF/UHF High power amplifiers DRAWING 25.0+/-0.3 applications.

RD70HVF1

Abstract: RD70HVF1-101 RD70HVF vhf power transistor 50W uhf power transistor 50W MITSUBISHI RF POWER MOS FET S 170 MOSFET TRANSISTOR RF Transistor s-parameter vhf 100OHM Rf power transistor mosfet
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD70HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz70W 520MHz,50W OUTLINE DESCRIPTION DRAWING 25.0+/-0.3 RD70HVF1 is a MOS FET type transistor specifically

RD70HVF1-101

Abstract: RD70HVF1 RD70HVF 70w power amplifier rd70hvf1 60W VHF circuit RF amplifier
Contextual Info: < Silicon RF Power MOS FET Discrete > RD70HVF1 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz70W 520MHz,50W DESCRIPTION OUTLINE RD70HVF1 is a MOS FET type transistor specifically designed for VHF/UHF High power amplifiers DRAWING 25.0+/-0.3 applications.

RD70HVF

Abstract: RD70HV vhf power transistor 50W 175MHz70W MOSFET 2095 transistor 50w rf power transistor 520-MHz
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD70HVF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor, 175MHz70W 520MHz,50W OUTLINE DRAWING DESCRIPTION 25.0+/-0.3 RD70HVF1 is a MOS FET type transistor specifically designed for VHF/UHF High power amplifiers

T1P3005028-SP

Abstract: 50w transistor RF power transistor
Contextual Info: TriQuint It TM PO W ER B A N D SEMICONDUCTOR T1P3005028-SP 50W, 28V, 500 MHz-2 GHz, Pulsed, Powerband pHEMT RF Power Transistor Introduction Table 1. M axim um Ratings Sym The T1P3005028-SP is a POWERBAND™ discrete pHEMT, depletion mode RF Power Transistor designed

RD70HVF1

Abstract: RD70HVF transistor d 1710 S 170 MOSFET TRANSISTOR vhf power transistor 50W 100OHM 50w rf power transistor d 2095 transistor MOSFET 2095 transistor
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD70HVF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor, 175MHz70W 520MHz,50W OUTLINE DESCRIPTION DRAWING 25.0+/-0.3 RD70HVF1 is a MOS FET type transistor specifically designed for VHF/UHF High power amplifiers

A1933

Abstract: amplifier 50 50W
Contextual Info: RF3931D Proposed 30W GAN ON SIC POWER AMPLIFIER DIE Package: Die Features     Broadband Operation DC4GHz Advanced GaN HEMT Technology Packaged Small Signal Gain=14dB at 2GHz 48V Typical Packaged Performance RF OUT VD RF IN VG •Output Power 50W at P3dB

Contextual Info: RF3931D 30W GaN ON SiC POWER AMPLIFIER DIE Package: Die Features     Broadband Operation DC4GHz Advanced GaN HEMT Technology Packaged Small Signal Gain=14dB at 2GHz 48V Typical Packaged Performance RF OUT VD RF IN VG •Output Power 50W at P3dB

MRF450A

Contextual Info: MRF450A NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRF450A is Designed for 12.5 Volt Power Amplifier Applications up to 30 MHz. PACKAGE STYLE .500" 4L STUD FEATURES INCLUDE: 45° A 1 • POUT = 50 W • PG = 11 dB Min. @ 30MHz & 50W • Efficiency 50%

smd Transistor 1117

Abstract: PD85050S smd Transistor 1116 J0363
Contextual Info: PD85050S RF power transistor from the LdmoST family of N-channel enhancement-mode lateral MOSFETs Datasheet −preliminary data Features • Operating frequencies from 1 MHz to 1000 MHz ■ POUT > 50W with 12dB gain @ 870 MHz / 13.6V ■ Unmatched device for wideband operation

Contextual Info: Part Number: Integra ILD0912M400HV TECHNOLOGIES, INC. Avionics TACAN RF Power LDMOS FET Silicon LDMOS FET  High Power Gain  Superior thermal stability The high power transistor part number ILD0912M400HV is designed for Avionics TACAN systems operating at 960-1215MHz.

Contextual Info: Part Number: Integra IB1011L470 TECHNOLOGIES, INC. L-Band Avionics Transistor Silicon Bipolar − Ultra-high fT The high power pulsed avionics transistor part number IB1011L470 is designed for L-Band avionics systems operating at 1030 and 1090 MHz. While operating in class C mode under Mode S-ELM pulse burst

Contextual Info: Part Number: Integra IB1012S500 TECHNOLOGIES, INC. L-Band TACAN Transistor Silicon Bipolar − Ultra-high fT The high power pulsed transistor device part number IB1012S500 is designed for systems operating over the instantaneous bandwidth of 1025-1150 MHz. While operating in class C mode under DME pulsing

J464

Abstract: SL-5020 j196 Transistor J182
Contextual Info: Advance Data Sheet Product Description SL-5020 The SL-5020 is Stanford Microdevices’ high-linearity 50W PEP LDMOS transistor designed for base station applications up to 2000 MHz. Rated for minimum peak envelope power of 50W, it is ideal for CDMA Single or Multi-Carrier Power Amplifiers in

transistor C 245 b

Contextual Info: MPSH11 / MMBTH11 MPSH11 MMBTH11 C C B E TO-92 B SOT-23 E Mark: 3G NPN RF Transistor This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100 mA to 10 mA range to 300 MHz, and low frequency drift commonbase VHF oscillator applications with high output levels for

MPS-H20

Abstract: npn, transistor, sc 107 b MV400 3 w RF POWER TRANSISTOR NPN
Contextual Info: MPSH20 / MMBTH20 MPSH20 MMBTH20 C C B E TO-92 B SOT-23 E Mark: 3L NPN RF Transistor This device is designed for general RF amplifier and mixer applications to 250 MHz with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 49. Absolute Maximum Ratings*

332MCP

Abstract: NTE307 27MHz rf transmitter NTE332 T0202 NTE297 NTE300 T072 T092 297MP
Contextual Info: Bt-POLAR TRANSISTORS NTE Type Number Polarity and Material 297MP NPN-Si 298 PNP-Si Description and Application Matched Pair of NTE297 : » Audio Amp, Driver Compì to NTE297 Collector to Base (Volts) Collector to Emitter (Volts) Emitter Case Style Diag.

2 x 50W amplifier

Abstract: UHF TRANSISTOR 2SC3218B 50w transistor
Contextual Info: GAE GREAT AMERICAN ELECTROINCS 2SC3218B Silicon NPN power UHF transistor 2SC3218B permits the design of a Class AB Push-Pull broadband amplifier having a good degree of linearity. Output Power: Frequency Range: Voltage: Package Type: Common Emitter Configuration