512W Search Results

ITL 9

Abstract: W6106
Contextual Info: - 386- 2 M 2 5 6 K X 8 v ;U 5 1» * °- h 5Ü £ 'J «P D 4 8 2 2 3 4 - 7 0 / - 8 0 //PD 4 82 23 5 -70 /-8 0 N EC - 2 5 6 k W X 8 + 512W x 8 - 'S 5 V± 10% - U K W « * / (R A M , S A M ) (m W I X X ÍM fr $ S ü f c (m A ) ( S A M X ? > '< 4 , T 7 t -i •/)

how to reset 24C04

Abstract: pin configurations of 24c04 1 24C04 wp eeprom 24c04 pin configuration "Ferroelectric RAM" 24C04 xicor FM24C04 24c04 reset 24C04 X24C04
Contextual Info: FM24C04 FRAM Serial Memory Product Specification Features 4,096-Bit Nonvolatile Ferroelectric RAM Organized as 512w x 8b • Very Low Power CMOS Technology - 100µA Active Read or Write - 25µA Standby Over Commercial Temperature Range ■ Reliable Thin Film Ferroelectric Technology

SML-51

Abstract: SML-511DW SML-511UW SML-511WW SML-512DW SML-512MW SML-512UW SML-512WW SML-512VWA SML-512PWA
Contextual Info: 0603<1.6 0.8 t=0.55mm> High Brightness Type SML-51 Series Green Yellowish Green Emitting Color Yellow Orange Red AlGaInP on GaAs Material Package Size(mm) 1608(0603) 1.6x0.8(t=0.55) SML-512PW(A) SML-512MW SML-511WW SML-512WW SML-511DW SML-512DW SML-512CW(A) SML-511UW

PJ 0416 1v

Abstract: til 3010 1208FRAM 7S5SG15
Contextual Info: RAMTRON 4SE CORP D 7SSSG15 GGÜÜO^b 12D I RAH F M 1 2 0 8 F R A M M e m o ry r ^ lM T R O 4,096-Bit Nonvolatile Ferroelectric RAM Product Preview N Features • 4,096-Bit Nonvolatile Ferroelectric RAM Organized as 512wx 8b ■ CMOS Technology with Integrated Ferroelectric

Contextual Info: SML-512WW Data Sheet SML-51 Series 1608（0603） 1.6x0.8mm（t=0.55mm） Features ・Original device technology enables high brightness and high reliability Color Type ・High reliability due to the wide operation temperature -40℃ to +100℃ (SML-512(A) Series)

Ferroelectric RAM

Abstract: micron sram 5v 512*8
Contextual Info: 2 4 19W F M 1 2 0 8 F R A M F ^ M M e m o ry 4,096-Bit Nonvolatile Ferroelectric RAM Product Preview T R O I M Features • 4,096-Bit Nonvolatile Ferroelectric RAM Organized as 512wx 8b ■ CMOS Technology with Integrated Ferroelectric Storage Cells ■ Fully Synchronous Symmetrical Operation with Two

FM24CO4

Abstract: 24C04P FMZ4C04 24G04 24C04 xicor pin configurations of 24c04 1 FM24C04P
Contextual Info: I FM24C04 FRAM Serial Memory 9 r ^ M T R Q N Product Preview Features • 4 ,096-Bit Nonvolatile Ferroelectric RAM Organized as 512wx8b ■ Very Low Power CMOS Technology - 100 JA Active (Read or Write - 25.uA Standby ■ Reliable Thin Film Ferroelectric Technology

transistor A4t

Abstract: transistor A4t 45 transistor A4t 35 transistor A4t 16
Contextual Info: ï éoJm RAfITRON CORP 33E D 755SD15 aGOQG71 □ FMx 1208FRAM Memory r ^ M 4,096-Bit Nonvolatile Ferroelectric RAM Engineering Evaluation Unit* T R ü N v Features • 4,096-Bit Nonvolatile Ferroelectric RAM Organized as 512w x 8b ■ CMOS Technology with Integrated Ferroelectric

MSM514252RS-10

Abstract: c5242 LM 385 N 256KX4 MSM514252ZS-10 MN50000
Contextual Info: — 382 — 1M 2 5 6 K X 4 5' £ D lim S A (RAM /SAM ) (mW) h • ¿^E'J M R fiin w i-in -19 -i=; iWRsnr/i w - i n -19 -1^ s± ü 256KW X 4bit/512W x 4bit 5 V ±10% 330, 302.5, 247.5/ 450, 400, 350/ 330, 280, 250(max) 220, 165, 137. W , 16.5(max> 22(max)

xicor X24C04

Contextual Info: FM24C04 FRAM Serial Memory r ^ M T R O N Product Specification Features • 4,096-Bit Nonvolatile Ferroelectric RAM Organized as 512wx 8b ■ Very Low Power CMOS Technology - lOOpA Active Read or Write - 25pA Standby Over Commercial Temperature Range ■ Reliable Thin Film Ferroelectric Technology

pin configurations of 24c04 1

Abstract: 24C04 xicor FM24C04 LSBP
Contextual Info: FM24C04 FRAM Serial Memory F ^ M T R O IM Product Specification Features • 4,096-Bit Nonvolatile Ferroelectric RAM Organized as 512wx 8b ■ Very Low Power CMOS Technology - lOOpA Active Read or Write - 25]iA Standby Over Commercial Temperature Range

SML-512MW

Abstract: SML-511DW SML-511UW SML-511WW SML-512DW SML-512UW SML-512WW Mini-Mold IR630
Contextual Info: SURFACE MOUNT LED LAMPS High Brightness Type Mini-molded chip LEDs SML-51＊ Series Green Package Size （mm） Yellow Orange Red 611nm 630nm AlGaInP on GaAs 570nm 590nm 1608 0603 1.6x0.8 t=0.55 SML-511WW SML-512WW SML-511DW • Absolute Maximum Ratings（Ta=25℃）

Contextual Info: 2 4 19W FM 1208FRAM Memory r^ M T R O N 4,096-Bit Nonvolatile Ferroelectric RAM Product Preview Features • 4,096-Bit Nonvolatile Ferroelectric RAM Organized as 512wx 8b ■ CMOS Technology with Integrated Ferroelectric Storage Cells ■ Fully Synchronous Symmetrical Operation with Two

TC160G

Abstract: toshiba LGA Nand TC170C14 TC26SC TC170C1 TC170C29
Contextual Info: TOSHIBA TC170C CMOS Standard Cell 0.7\xm , 5.0V ASICs The 0.7nm, 5V TC170C allows higher area efficiency, system performance and device integration with lower power than previous generation 5V standard cell products Benefits • Advanced 0.7 micron CMOS process with fast 250ps gate

SF229

Abstract: toshiba s105
Contextual Info: TOSHIBA TC528257 t a r g e t s il ic o n g a t e c m o s s p e c 262,144WORDS X 8BITS MULTIPORT DRAM DESCRIPTION T h e T C 5 2 8 2 5 7 is a 2M b it C M O S m u ltip o rt m e m o ry eq u ip p e d w ith a 2 6 2 ,1 4 4 -w o rd s b y ra n d o m a ccess m e m o ry R A M p o rt a n d a 5 1 2 -w o rd s by

Contextual Info: SN74ACT7201A-25, SN74ACT7201A-35, SN74ACT7201A-50 512 x 9 ASYNCHRONOUS FIRST-IN FIRST-OUT MEMORY D3101. MARCH 1988 • Asynchronous Operation S N 74A C T72 01A . . . N PACKAGE TOP VIEW • Lower Power Consumption Active . . . 400 mW Power Down . . . 3 mW

Contextual Info: TLC1542C, TLC1542I, TLC1542M, TLC1542Q, TLC1543C, TLC1543I, TLC1543Q 10-BIT ANALOG-TO-DIGITAL CONVERTERS WITH SERIAL CONTROL AND 11 ANALOG INPUTS SLAS052E – MARCH 1992 – OCTOBER 1998 10-Bit Resolution A/D Converter 11 Analog Input Channels Three Built-In Self-Test Modes

Contextual Info: TLV1543C, TLV1543I, TLV1543M 3.3-V 10-BIT ANALOG-TO-DIGITAL CONVERTERS WITH SERIAL CONTROL AND 11 ANALOG INPUTS SLAS072D – DECEMBER 1992 – REVISED JULY 2000 D D D D D D D D D D 3.3-V Supply Operation 10-Bit-Resolution A/D Converter 11 Analog Input Channels

8251a usart interface from z80

Abstract: UDL TM 500 f922 verilog code for 8254 timer l912 256x32 POWER MODULE TM 31 udl 500 78K3 F5S4
Contextual Info: L4E75BS DÜHBÖGb 3ÔÔ B I N E C E CB-C7, 5-VOLT 0.8-M ICRON CELL-BASED CMOS ASIC NEC NEC Electronics Inc. August 1993 Description Figure 1. Integrated HDD Solution with CBC7 Cell-Based ASIC with Embedded 78K3 MPU, Compiled SRAMs and A/D Converters CB-C7 cell-based product family is a 0.8-micron drawn

Contextual Info: TLV1549C, TLV1549I, TLV1549M 10-BIT ANALOG-TO-DIGITAL CONVERTERS WITH SERIAL CONTROL SLAS071C – JANUARY 1993 – REVISED MARCH 1995 3.3-V Supply Operation 10-Bit-Resolution Analog-to-Digital Converter ADC Inherent Sample and Hold Function Total Unadjusted Error . . . ± 1 LSB Max

C4558

Abstract: C4554 C4557 c455 CY7C455-14JI CY7C455 CY7C456 CY7C457 CY7C447
Contextual Info: CY7C455 CY7C456 CY7C457 512 x 18, 1K x 18, and 2K x 18 Cascadable Clocked FIFOs with Programmable Flags • Depth Expansion Capability • 52-pin PLCC and 52-pin PQFP Features • High-speed, low-power, first-in first-out FIFO memories • 512 x 18 (CY7C455)

Contextual Info: * Ordering number:ENN 2928A CMOS IC LC66E516 4-bit Single Chip Microcontroller with EPROM Preliminary Overview The LC66E516 is a 4-bit single-chip microcontroller with an EPROM on-chip, and can be used for developing and evaluating application programs for the LC665XX series

TC524258

Abstract: TC524259BJ C69 WML dsf03
Contextual Info: TOSHIBA TC524259B s il ic o n g a t e c m o s 262, 144WORDS X 4BITS MULTIPORT DRAM target DESCRIPTION The TC524259B is a CMOS multiport memory equipped with a 262,144-words by 4-bits dynamic random access memory RAM port and a 512-words by 4-bits static serial access memory (SAM) port. The TC524259B

Contextual Info: TMS320C5x, TMS320LC5x DIGITAL SIGNAL PROCESSORS SPRS030A – APRIL 1995 – REVISED APRIL 1996 D D D D D D D D D D D D D D D Powerful 16-Bit TMS320C5x CPU 20-, 25-, 35-, and 50-ns Single-Cycle Instruction Execution Time for 5-V Operation 25-, 40-, and 50-ns Single-Cycle Instruction