56360A
Abstract: TO220 washer rectangular 56264B 56379 56369 56359B 56364 56359C 56295B
Text: ACCESSORIES _ TYPE NUMBER SUMMARY type number description envelope 56264a mica washer up to 2000 V DO-5, TO-48 56264b insulating bush DO-5, TO-48 56295a mica washer (up to 2000 V) DO-4, TO-64 56295b PTFE ring DO-4, TO-64 56295c
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56264a
56264b
56295a
56295b
56295c
56359b
56359c
56359d
56360a
56368b
TO220 washer rectangular
56379
56369
56364
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Untitled
Abstract: No abstract text available
Text: N AMER P H I L I P S / D I S C R E T E bbS3T31 0011173 a • ObE D BTW 63 SERES y v ^ r - a s - - 17 F i FAST TURN-OFF THYRISTORS Glass-passivated, asymmetrical, fast turn-off, forward blocking thyristors ASC R in TO-48 envelopes, suitable for operation in fast power inverters. For reverse-blocking operation use with a series diode,
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bbS3T31
1000R
bbSBT31
BTW63
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nas77
Abstract: BTW63-600R diode t25 4 KO BTW63 56264a 600R 800R IEC134 gate turn-off
Text: N AMER PHILIPS/DISCRETE ObE J> • _ bbS3T 31 OOi n 7_3 _fl_ BTW63 SERIES 7 FAST TURN-OFF THYRISTORS Glass-passivated, asymmetrical, fast turn-off, forward blocking thyristors ASCR in TO-48 envelopes, suitable for operation in fast power inverters. For reverse-blocking operation use with a series diode,
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BTW63
BTW63-600R
1000R
4inx28UNF
14/fis
150ks;
T-05-n
M0152
nas77
diode t25 4 KO
56264a
600R
800R
IEC134
gate turn-off
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BYV22
Abstract: No abstract text available
Text: N ANER P H T L I P S /D IS C R E T E TOD D bb53T31 0010564 r 3 BYV22 SERIES SCHOTTKY-BARRIER RECTIFIER DIODES High-efficiency schottky-barrier rectifier diodes in DO-5 metal envelopes, featuring low forward voltage drop, low capacitance, absence of stored charge and high temperature stability. They are
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bb53T31
BYV22
BYV22â
btiS3T31
00105T1
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE TOD D bbS3T31 0010540 5 1N3909 to 1N3913 FAST SOFT-RECOVERY RECTIFIER DIODES Silicon diodes in DO—5 metal envelopes, featuring non-snap-off characteristics. They are intended for use in high-frequency power supplies, thyristor inverters and multi-phase power rectifier applications.
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bbS3T31
1N3909
1N3913
1N3910
1N3911
1N3912
1N3913.
1N3909
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PHS803
Abstract: PHS804
Text: N AMER PHILIPS/DISCRETE OLE D il LL53^31 □01lb71 3 PHS801 SERIES 19 ULTRA FAST RECOVERY RECTIFIER DIODES The PHS801 series devices are glass-passivated, high efficiency silicon rectifier diodes featuring low forward voltage drop, very fast reverse recovery times, very low stored charge and soft recovery.
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01lb71
PHS801
PHS801,
PHS802,
PHS803
PHS804.
PHS801
PHS804
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE 90D 10592 1DD D • D T '0 3 - £ . l 00105=12 2 B Y V 23 SERIES SCHOTTKY-BARRIER RECTIFIER DIODES High-efficiency schottky-barrier rectifier diodes in DO—5 metal envelopes, featuring low forward voltage drop, low capacitance, absence o f stored charge and high temperature stability. They are
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BYV23â
BYV23-30
BYV23
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1N3913
Abstract: thyristor 507 1N3909 1N3910 1N3911 1N3912
Text: N AMER PHILIP S/D ISCRETE TOD D btS3T31 G010S40 S 1N3909 to 1N3913 FAST SOFT-RECOVERY RECTIFIER DIODES Silicon diodes in DO—5 metal envelopes, featuring non-snap-off characteristics. They are intended for use in high-frequency power supplies, thyristor inverters and multi-phase power rectifier applications.
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bbS3T31
G010S40
1N3909
1N3913
1N3910
1N3911
1N3912
1N3913.
1N3913
thyristor 507
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transistor f6 13003
Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
Text: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.
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SC08b
transistor f6 13003
equivalent transistor bj 131-6
transistor Eb 13003 BM
BB112
smd TRANSISTOR code marking 2F 6n
a1211 lg
CQY58
BU705
TRANSISTOR 131-6 BJ 026
philips om350
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BYV22-35
Abstract: m0044 BYV22 35 max3035 BYV22 BYV22-40A RTB 17 D-10587 BYV22-30
Text: N AMER^PHILIPS/DISCRETE TOD D • bb53131 GOlDSflM 3 BYV22 SERIES J SCHOTTKY-BARRIER RECTIFIER DIODES High-efficiency schottky-barrier rectifier diodes in DO-5 metal envelopes, featuring low forward voltage drop, low capacitance, absence o f stored charge and high temperature stability. They are
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bbS3131
BYV22
BYV22-40A,
BYV22â
m2717
m80-1364m
bbS3T31
m80-1364/5
BYV22-35
m0044
BYV22 35
max3035
BYV22-40A
RTB 17
D-10587
BYV22-30
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1N3913
Abstract: 1N3909 1N3910 1N3911 1N3912
Text: AMER PH ILI PS/DISCRE TE TOD D • hbS3T31 001054G S 1N3909 to 1N3913 X FAST SOFT-RECOVERY RECTIFIER DIODES Silicon diodes in DO—5 metal envelopes, featuring non-snap-off characteristics. They are intended fo r use in high-frequency power supplies, th yristo r inverters and multi-phase power rectifier applications.
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001054G
1N3909
1N3913
1N3910
1N3911
1N3912
1N3913.
DD1D54S
1N3913
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PHS803
Abstract: rectifier 802 D8755 IEC134 PHS801 PHS802 PHS804 ultra fast pulse generator Philips FA 153
Text: N A UE R PHILIPS/DISCRETE ObE D • ^ 5 3 = 1 3 1 ' 00111=71 3 ■ PHS801 SERIES H t - 0 3 - I 9 ULTRA FAST RECOVERY RECTIFIER DIODES The PHS801 series devices are glass-passivated, high efficiency silicon rectifier diodes featuring low
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PHS801
PHS801,
PHS802,
PHS803
PHS804.
M1572
rectifier 802
D8755
IEC134
PHS802
PHS804
ultra fast pulse generator
Philips FA 153
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56360A
Abstract: 56359D
Text: MOUNTING INSTRUCTIONS TO-220 MOUNTING INSTRUCTIONS FOR TO-220 ENVELOPES GENERAL DATA AND INSTRUCTIONS General rules 1. 2. 3. 4. First fasten the device to the heatsink before soldering the leads. Avoid axial stress to the leads. Keep mounting tool e.g. screwdriver clear o f the plastic body.
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O-220
O-220
56264a
56264b
56264a.
56264a
56264b
56360A
56359D
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Untitled
Abstract: No abstract text available
Text: I N AMER PH ILIPS/D ISCR ETE DEVELOPMENT DATA TDD • D 90D bb53131 OOlOSEb T ■ 10226 D BYP59 SERIES This data sheet contains advance in form atio n and specifications are subject to change w ith o u t notice. J ULTRA FAST RECOVERY RECTIFIER DIODES FEATURING LOW REVERSE LEAKAGE
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bb53131
BYP59
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m2131
Abstract: BYV92-300 M2291 M2132 BYV92-500U BYV92 M2135 philips vr 468
Text: I I N AMER P H I L I P S / D I S C R E T E MAINTENANCE TYPE 5SE D G022bbl □ • BYV92 îàbHlhb ^ 5 3 1 3 1 V T ^ O Z - l 0! ULTRA FA ST R E C O V E R Y R E C T IF IE R D IO D E S Glass-passivated, high-efficiency epitaxial rectifier diodes in DO-5 metal envelopes, featuring low
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BYV92-300
M2134
M2135
m2136
m2131
M2291
M2132
BYV92-500U
BYV92
M2135
philips vr 468
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56264b
Abstract: 56264a BYP59-300M BYP59-300U 10226D m1247
Text: bbSBTBl OOlOSSb T TGD D N AMER PHILIPS/DISCRETE 90D 1 0 2 2 6 DEVELOPMENT DATA D ^ BYP59 SERIES This data sheet contains advance information and specifications are subject to change without notice. ULTRA FAST RECOVERY RECTIFIER DIODES FEATURING LOW REVERSE LEAKAGE
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00102Sb
BYP59
M1247
56264b
56264a
BYP59-300M
BYP59-300U
10226D
m1247
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m2131
Abstract: BYV92 100 BYV92 BYV92-300 BYV92-500U T0319 M2132 350AT m2136
Text: BYV92 SERIES M A IN T E N A N C E T Y P E LIPS INTERNATIONAL SbE D • J V 711Dâ2b □□414bb S2b ■ P H I N T - O Z - l l ULTRA FAST RECOVERY RECTIFIER DIODES Glass-passivated, high-efficiency epitaxial rectifier diodes in DO-5 metal envelopes, featuring low
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BYV92
BYV92-300
f-10au
T-03-19
711002b
Q0mM73
M2135
M2136
m2131
BYV92 100
BYV92-500U
T0319
M2132
350AT
m2136
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BYV23
Abstract: byv23 philips BYV23-30 BYV23-30M BYV23-35 BYV23-40A M2736
Text: N AMER P H I L I P S / D I S C R E T E 90D TDD D 10592 D • b t i5 3 Ì 31 00105=12 T ‘ 0 3 - <Z f BYV23 SERIES SCHOTTKY-BARRIER RECTIFIER DIODES ^ £ ^ ien°V schottky-barrier rectifier diodes in D O -5 metal envelopes, featuring low forward '0W c,apacitance' absence o f stored charge and high temperature stability. They are
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BYV23
BYV23-40A,
BYV23-30
M2736
M1246
byv23 philips
BYV23-30M
BYV23-35
BYV23-40A
M2736
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BGY41
Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
Text: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.
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LCD01
BGY41
BFW10 FET transistor
CQY58
germanium
RX101
equivalent components FET BFW10
bd643
bf199
283 to92 600a transistor
zener phc
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FET BFW10
Abstract: KP101A FET BFW11 BDX38 KPZ20G CQY58A BFW10 FET RPW100 B0943 OF FET BFW11
Text: INDEX _ INDEX OF TYPE NUM BERS The inclusion of a type number in this publication does not necessarily imply its availability. Type no. book section Type no. book section Type no. book section BA220 BA221 BA223 BA281 BA314 SCOI SCOI SCOI SCOI
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BA220
BA221
BA223
BA281
BA314
BA315
BA316
BA317
BA318
BA423
FET BFW10
KP101A
FET BFW11
BDX38
KPZ20G
CQY58A
BFW10 FET
RPW100
B0943
OF FET BFW11
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BYV92-500M
Abstract: No abstract text available
Text: ii N AMER PHILIPS/DISCRETE MAINTENANCE TYPE 2SE D LL53T31 0 0 2 2 b b l 0 • B Y V 9 2 tjh H Ib b 7 -0 2 -1 ULTRA FAST RECOVERY RECTIFIER DIODES Glass-passivated, high-efficiency epitaxial rectifier diodes in DO-5 metal envelopes, featuring low forward voltage drop,ultra fast reverse recovery times, very low stored charge and soft recovery
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LL53T31
BYV92-300
30issible
bhS3T31
BYV92
T-03-19
bbS3T31
QD22bb7
BYV92-500M
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D8757A
Abstract: Philips fr 153 30 IEC134 PHS801 PHS802 PHS803 PHS804 56264b D8755
Text: N AMER PHILIPS/DISCRETE OLE D • ^53=131 QQllt7l 3 PHS801 SERIES r ~ 0 2 > -l< ? ULTRA FAST RECOVERY RECTIFIER DIODES The PHS801 series devices are glass-passivated, high efficiency silicon rectifier diodes featuring low forward voltage drop, very fast reverse recovery times, very low stored charge and soft recovery.
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PHS801
PHS801,
PHS802,
PHS803
PHS804.
M1572
D8757A
Philips fr 153 30
IEC134
PHS802
PHS804
56264b
D8755
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