56264B Search Results

56360A

Abstract: TO220 washer rectangular 56264B 56379 56369 56359B 56364 56359C 56295B
Contextual Info: ACCESSORIES _ TYPE NUMBER SUMMARY type number description envelope 56264a mica washer up to 2000 V DO-5, TO-48 56264b insulating bush DO-5, TO-48 56295a mica washer (up to 2000 V) DO-4, TO-64 56295b PTFE ring DO-4, TO-64 56295c

Contextual Info: N AMER P H I L I P S / D I S C R E T E bbS3T31 0011173 a • ObE D BTW 63 SERES y v ^ r - a s - - 17 F i FAST TURN-OFF THYRISTORS Glass-passivated, asymmetrical, fast turn-off, forward blocking thyristors ASC R in TO-48 envelopes, suitable for operation in fast power inverters. For reverse-blocking operation use with a series diode,

nas77

Abstract: BTW63-600R diode t25 4 KO BTW63 56264a 600R 800R IEC134 gate turn-off
Contextual Info: N AMER PHILIPS/DISCRETE ObE J> • _ bbS3T 31 OOi n 7_3 _fl_ BTW63 SERIES 7 FAST TURN-OFF THYRISTORS Glass-passivated, asymmetrical, fast turn-off, forward blocking thyristors ASCR in TO-48 envelopes, suitable for operation in fast power inverters. For reverse-blocking operation use with a series diode,

BYV22

Contextual Info: N ANER P H T L I P S /D IS C R E T E TOD D bb53T31 0010564 r 3 BYV22 SERIES SCHOTTKY-BARRIER RECTIFIER DIODES High-efficiency schottky-barrier rectifier diodes in DO-5 metal envelopes, featuring low forward voltage drop, low capacitance, absence of stored charge and high temperature stability. They are

Contextual Info: N AMER PHILIPS/DISCRETE TOD D bbS3T31 0010540 5 1N3909 to 1N3913 FAST SOFT-RECOVERY RECTIFIER DIODES Silicon diodes in DO—5 metal envelopes, featuring non-snap-off characteristics. They are intended for use in high-frequency power supplies, thyristor inverters and multi-phase power rectifier applications.

PHS803

Abstract: PHS804
Contextual Info: N AMER PHILIPS/DISCRETE OLE D il LL53^31 □01lb71 3 PHS801 SERIES 19 ULTRA FAST RECOVERY RECTIFIER DIODES The PHS801 series devices are glass-passivated, high efficiency silicon rectifier diodes featuring low forward voltage drop, very fast reverse recovery times, very low stored charge and soft recovery.

Contextual Info: N AMER PHILIPS/DISCRETE 90D 10592 1DD D • D T '0 3 - £ . l 00105=12 2 B Y V 23 SERIES SCHOTTKY-BARRIER RECTIFIER DIODES High-efficiency schottky-barrier rectifier diodes in DO—5 metal envelopes, featuring low forward voltage drop, low capacitance, absence o f stored charge and high temperature stability. They are

1N3913

Abstract: thyristor 507 1N3909 1N3910 1N3911 1N3912
Contextual Info: N AMER PHILIP S/D ISCRETE TOD D btS3T31 G010S40 S 1N3909 to 1N3913 FAST SOFT-RECOVERY RECTIFIER DIODES Silicon diodes in DO—5 metal envelopes, featuring non-snap-off characteristics. They are intended for use in high-frequency power supplies, thyristor inverters and multi-phase power rectifier applications.

transistor f6 13003

Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
Contextual Info: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.

BYV22-35

Abstract: m0044 BYV22 35 max3035 BYV22 BYV22-40A RTB 17 D-10587 BYV22-30
Contextual Info: N AMER^PHILIPS/DISCRETE TOD D • bb53131 GOlDSflM 3 BYV22 SERIES J SCHOTTKY-BARRIER RECTIFIER DIODES High-efficiency schottky-barrier rectifier diodes in DO-5 metal envelopes, featuring low forward voltage drop, low capacitance, absence o f stored charge and high temperature stability. They are

1N3913

Abstract: 1N3909 1N3910 1N3911 1N3912
Contextual Info: AMER PH ILI PS/DISCRE TE TOD D • hbS3T31 001054G S 1N3909 to 1N3913 X FAST SOFT-RECOVERY RECTIFIER DIODES Silicon diodes in DO—5 metal envelopes, featuring non-snap-off characteristics. They are intended fo r use in high-frequency power supplies, th yristo r inverters and multi-phase power rectifier applications.

PHS803

Abstract: rectifier 802 D8755 IEC134 PHS801 PHS802 PHS804 ultra fast pulse generator Philips FA 153
Contextual Info: N A UE R PHILIPS/DISCRETE ObE D • ^ 5 3 = 1 3 1 ' 00111=71 3 ■ PHS801 SERIES H t - 0 3 - I 9 ULTRA FAST RECOVERY RECTIFIER DIODES The PHS801 series devices are glass-passivated, high efficiency silicon rectifier diodes featuring low

56360A

Abstract: 56359D
Contextual Info: MOUNTING INSTRUCTIONS TO-220 MOUNTING INSTRUCTIONS FOR TO-220 ENVELOPES GENERAL DATA AND INSTRUCTIONS General rules 1. 2. 3. 4. First fasten the device to the heatsink before soldering the leads. Avoid axial stress to the leads. Keep mounting tool e.g. screwdriver clear o f the plastic body.

Contextual Info: I N AMER PH ILIPS/D ISCR ETE DEVELOPMENT DATA TDD • D 90D bb53131 OOlOSEb T ■ 10226 D BYP59 SERIES This data sheet contains advance in form atio n and specifications are subject to change w ith o u t notice. J ULTRA FAST RECOVERY RECTIFIER DIODES FEATURING LOW REVERSE LEAKAGE

m2131

Abstract: BYV92-300 M2291 M2132 BYV92-500U BYV92 M2135 philips vr 468
Contextual Info: I I N AMER P H I L I P S / D I S C R E T E MAINTENANCE TYPE 5SE D G022bbl □ • BYV92 îàbHlhb ^ 5 3 1 3 1 V T ^ O Z - l 0! ULTRA FA ST R E C O V E R Y R E C T IF IE R D IO D E S Glass-passivated, high-efficiency epitaxial rectifier diodes in DO-5 metal envelopes, featuring low

56264b

Abstract: 56264a BYP59-300M BYP59-300U 10226D m1247
Contextual Info: bbSBTBl OOlOSSb T TGD D N AMER PHILIPS/DISCRETE 90D 1 0 2 2 6 DEVELOPMENT DATA D ^ BYP59 SERIES This data sheet contains advance information and specifications are subject to change without notice. ULTRA FAST RECOVERY RECTIFIER DIODES FEATURING LOW REVERSE LEAKAGE

m2131

Abstract: BYV92 100 BYV92 BYV92-300 BYV92-500U T0319 M2132 350AT m2136
Contextual Info: BYV92 SERIES M A IN T E N A N C E T Y P E LIPS INTERNATIONAL SbE D • J V 711Dâ2b □□414bb S2b ■ P H I N T - O Z - l l ULTRA FAST RECOVERY RECTIFIER DIODES Glass-passivated, high-efficiency epitaxial rectifier diodes in DO-5 metal envelopes, featuring low

BYV23

Abstract: byv23 philips BYV23-30 BYV23-30M BYV23-35 BYV23-40A M2736
Contextual Info: N AMER P H I L I P S / D I S C R E T E 90D TDD D 10592 D • b t i5 3 Ì 31 00105=12 T ‘ 0 3 - <Z f BYV23 SERIES SCHOTTKY-BARRIER RECTIFIER DIODES ^ £ ^ ien°V schottky-barrier rectifier diodes in D O -5 metal envelopes, featuring low forward '0W c,apacitance' absence o f stored charge and high temperature stability. They are

BGY41

Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
Contextual Info: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.

FET BFW10

Abstract: KP101A FET BFW11 BDX38 KPZ20G CQY58A BFW10 FET RPW100 B0943 OF FET BFW11
Contextual Info: INDEX _ INDEX OF TYPE NUM BERS The inclusion of a type number in this publication does not necessarily imply its availability. Type no. book section Type no. book section Type no. book section BA220 BA221 BA223 BA281 BA314 SCOI SCOI SCOI SCOI

BYV92-500M

Contextual Info: ii N AMER PHILIPS/DISCRETE MAINTENANCE TYPE 2SE D LL53T31 0 0 2 2 b b l 0 • B Y V 9 2 tjh H Ib b 7 -0 2 -1 ULTRA FAST RECOVERY RECTIFIER DIODES Glass-passivated, high-efficiency epitaxial rectifier diodes in DO-5 metal envelopes, featuring low forward voltage drop,ultra fast reverse recovery times, very low stored charge and soft recovery

D8757A

Abstract: Philips fr 153 30 IEC134 PHS801 PHS802 PHS803 PHS804 56264b D8755
Contextual Info: N AMER PHILIPS/DISCRETE OLE D • ^53=131 QQllt7l 3 PHS801 SERIES r ~ 0 2 > -l< ? ULTRA FAST RECOVERY RECTIFIER DIODES The PHS801 series devices are glass-passivated, high efficiency silicon rectifier diodes featuring low forward voltage drop, very fast reverse recovery times, very low stored charge and soft recovery.