581000 Search Results

KMM581000An-8

Contextual Info: DRAM MODULES 581000AN 1 M X 8 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM M 581000AN is a 1M bit X 8 Dynamic RAM high density memory module. The Samsung KM M 581000A N consist of two 4M bit DRAMs KM 44C1000AJ - 1 M X 4 in 20-pin SOJ package

Contextual Info: SAMSUNG ELECTRONICS INC bME » • 7Tfcj4142 D 0 1 4 4 4 4 50b ■ SÎ1G K 581000AN DRAM MODULES 1 M X 8 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM M 581000AN is a 1M bit X 8 Dynamic RAM high density memory module. The Samsung

Contextual Info: JW. i 6 1993 581000A 1MByte 1M x 8 CMOS DRAM Module General Description The SM 581000A is a high performance, 1-megabyte dynamic RAM module organized as 1M words by 8 bits, in a 30-pin, leadless, single-in-line memory module (SIM M ) package. The module utilizes two CMOS 1M x 4 dynamic RAMs

Contextual Info: C XK SONY 131072-word X 581000P / M 1017121715L -1 0 L L /1 2 L U /1 5 L L 8-bit High Speed CMOS Static RAM Description 581000P/M is a general purpose high speed CMOS static RAM organized as 131, 072 words by 8 bits. Operating on a single 5V supply, this

Contextual Info: SAMSUNG ELECTRONICS INC m 42E D 7^4142 581000B GGlüMlö ñ «SPICK DRAM MODULES i'T 'Q U ^ n 1MX8 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM M 581000B Is a 1M bit X 8 Dynamic RAM high density memory module. The Samsung

E9442

Abstract: 39A118 CXK581000AM CXK581000ATM CXK581000AYM P0820
Contextual Info: SO NY 581000ATM/AYM/AM/AP -70LLX/10LLX 131,072-word x 8-bit High-Speed CMOS Static RAM Description The C X K 581000A TM /AY M /A M /A P are high speed CMOS static RAMs organized as 131,072-words-by-8- 581000ATM 581000AYM 32-pin TSOP Plastic 32-pin TSOP (Plastic)

CXK581000M

Abstract: CXK581000P 15L15LL
Contextual Info: 54E D • &3B23&3 000475b TTT I SONY C X K 581000P/M SONY. -10L712U15L -10LLV12LU/15LL 131072-word X 8-bit High Speed CMOS Static RAM SONY C O R P / C O M P O N E N T PRODS Description 581000P/M is a general purpose high speed CMOS static RAM organized as 131, 072 words by 8

CRL4

Abstract: s8100
Contextual Info: HYU N DA I E L E C T R O N I C S 3^E J> • Mb7SGflö G0003flfl 2 « H Y N K 1M X 8-Bit CMOS DRAM MODULI1?”. M431201B-APR91 DESCRIPTION FEATURES T c a - 2 . ?> tRAC tCAC tpc 581000-60 60 20 40 HYM S81000-70 70 20 40 H 581000-80 80 20 45 HYM 581000-10

km44c1000aj

Abstract: KMM581000AN
Contextual Info: 581000AN DRAM MODULES 1 M X 8 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM M 581000AN is a 1M bit X 8 Dynamic RAM high density memory module. The Samsung KMM581 OOOAN consist of two 4M bit DRAMs KM 44C1000AJ - 1 M X 4 in 20-pin SOJ package

SS1000

Abstract: KMM581000B
Contextual Info: 581000B DRAM MODULES 1 M X 8 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM M 581000B is a 1M bit X 8 Dynamic RAM high density memory module. The Samsung KMM581OOOB consist of eight KM41C1OOOBJ DRAMs in 20-pin SOJ package mounted on a 30-pin glass-epoxy

44C10

Contextual Info: DRAM MODULE 1 Mega Byte 581000CN Fast Page Mode 1Mx8 DRAM SIM M , 1K Refresh , 5V G EN E R A L DES C R IPTIO N The Sam sung K M M 581000C N is a 1M bit x 8 FEATURES • Performance Range: D ynam ic RAM high density m em ory module. The S am sung KM M 581000C N consists of tw o CMOS

Contextual Info: - !'l i C- !9Sú 581000ALP 1MByte 1M x 8 CMOS Low Profile DRAM Module General Description Features The SM 581000ALP is a high performance, 1Mbyte dynamic RAM memory module organized as 1M words by 8 bits, in a 30-pin, SIM M package. • • • The m odule utilizes two CM OS 1M x 4 dynamic RAMs

Contextual Info: ï i DRAWING R E V IS IO N S DOCUMENT SYM APP DATE RELEASE TO PRODUCTION PER D.O. 99-1161 PER ECNI 05A267 2,40 [.091 WAS 2.90 [ . I I ] I NATURAL WAS BLACK B 2,40 [.09] 5-19 A.C. OS c r 3, 17 [. 12] T n 03,30 [. 13] r 31,83 [ I .253] ORDER CINCH PART NUMBER

KMM581000N8

Contextual Info: 581000N DRAM MODULES 1 M x 8 D R A M S IM M M em ory M odule FEATURES GENERAL DESCRIPTION • Performance range: The Samsung 581000N is a 1M bit x 8 Dynamic RAM high density memory module. The Samsung 581000N c o n s is t o f tw o 4M b it DRAMs KM44C1000J-1M x 4 in 20-pin SOJ package mounted

Contextual Info: SONY. C X K 5 8 1 O O O P / •1OLX/12LX/15LX/ 10LLX/12LLX/15LLX M 131072-word X 8-bit High Speed CMOS Static RAM Description The C X K 5 8 1 0 0 0 P /M is a general purpose high speed CMOS sta tic RAM organized as 131072 w o rds by 8 bits. Operating on a single

Contextual Info: SONY 581000P/M - 1 O L X /1 2 L X /1 5 L X / 1 0 L L X /1 2 L L X /1 5 L L X 131072-word x 8-bit High Speed CMOS Static RAM D escription The C X K 5 8 1 0 0 0 P /M is a general purpose high speed CMOS sta tic RAM organized as 131072 w ords by 8 bits. Operating on a single

23C1001

Abstract: KMM5334100 km 23c 4000B KMM5362003C KM681001-25 KM68V257 KM428V256 23c4001 4100C M681000
Contextual Info: FUNCTION GUIDE MEMORY ICs 1. INTRODUCTION 1.1 Dynamic RAM 1Mx1 KM41C1000C-6 KM41C1000CL-6 KM41C1000CSL-6 256Kx4 4Mbit— 4Mx1 KM44C256C-6 KM44C256CL-6 KM44C256CL-7 KM 44C256CL-8 - KM44C256CSL-6 KM44C256CL-7 KM 44C256CL-8 — KM41C4000C-7 — KM41C4000C-8 KM41C4000C-5

KMM581000AN

Abstract: 581000A KMM581000A
Contextual Info: DRAM MODULES 581000AN 1M X 8 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: KMM581 OOOAN- 7 • • • • • • • tR A C tC A C tR C 70ns 20ns 130ns KMM581 OOOAN- 8 80ns 20ns 150ns KMM581 OOOAN-10 100ns 25ns 180ns Fast Page Mode operation

41C1000

Abstract: fujitsu 814100 TC 55464 toshiba HN62304 hn623257 658128 816b 41c464 hn62324 M7202A
Contextual Info: MEM ORY ICs FUNCTION GUIDE 3. C R O S S REFERENCE GUIDE 3.1 DRAM Density Org. Samsung Mode Toshiba Hitachi Fujitsu H M 51 256 M B 81256 NEC Oki 64K X 1 Page K M 416 4 25 6 K X 1 F. Page KM 41C256 TC 51256 Nibble KM 41C257 TC51257 S. C olu m n KM 41C258 TC 51258

CDG4602

Contextual Info: #AirBorn THE CONNECTOR COMPANY 4 * RO W Cable or Board to Crimp Removable . 075" RM4 86 & 110 Contacts .215 CRIMP REM O VABLE CO N TAC TS SIZE P A R T NU M BER 2 0-22 AWG RM4 0 0 - 0 0 0 - 5 7 1 - 0 0 0 0 24-26 AWG R M 4 0 0 -0 0 0 -581-0000 28-5 0 AWG R M 4 0 0 -0 0 0 -591-0000

Sony CMOS

Abstract: CXK581000M CXK581000P CXK581000
Contextual Info: S4E D SONY, Û3Ô53Ô3 00D47b? 7fl5 «SONY C X K 581O O O P / M ÌoLLX/?2LLX^5LLX 131072-word X 8-bit High Speed CMOS Static RAM SONY CORP/COMPONENT PROPS Description The C X K 5 8 1 0 0 0 P /M is a general purpose high speed CMOS static RAM organized as 131072 words by 8 bits. Operating on a single

417-801

Abstract: din 71550 KEMA 02 ATEX 1096 Kema 00 atex 2121 U Kema 00 atex 2013 X aluminium alloy 6067 cenelec hd 538 KEMA 04 ATEX 2098 rz-24 relay D102A056-130
Contextual Info: 1507 Technical portal and online community for Design Engineers - www.element-14.com Connectors - Multipole Page Automotive Specific Connectors . . . . . . . . . . . . Barrier Terminal Blocks . . . . . . . . . . . . . . . . . . . . Circular Multipole . . . . . . . . . . . . . . . . . . . . . . . . . .

fopf

Abstract: ML-7003 triode 3kw machlett x-ray tube air cooler x-ray tube operation ML-7003A Raytheon Company cathode ray xray tube
Contextual Info: PRODUCT DATA ML-7003A A P P L IC A T IO N The M L-7003A is a rug g ed ized shield ed -g rid trio d e capable o f w ith stand ing severe co n d itio n s of shock and vibratio n, w h ile still deliverin g a peak pulse p o w er o u tp u t o f 2.5 m e g a w a tts in s w itch tu b e serv­

Contextual Info: 54E D SONY • 7-^-y £ - J J. CXK581OOOP/M -12LB 1 f l3 f l2 3 fl 3 □ □ □ 4 7 7 b 7 EJfl M S O N Y 2 131072-word x 8-bit High Speed CMOS Static RAM SO N V C O R P / C O M P O N E N T PRODS Description The CXK581 OOOP/M is a general purpose high speed