6 PIN FET SMD Search Results

UL1577

Abstract: G3VM-VF
Contextual Info: Back G3VM-V MOS FET Relay G3VM Low-cost Series with 6-pin Construction Ideal for minute-signal scanning circuits and subscriber circuits of digital exchange systems. Both DIP and SMD constructions available. Approved Standards: UL1577 Ordering Information

bt 1696

Abstract: transistor z14 smd transistor z15 smd z14 smd Z25 SMD MGF0805A BT 1610 circuit smd z13 fet smd transistor SMD Z27
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF0805A L & S Band GaAs FET [ SMD non-matched ] DESCRIPTION Gate Mark Round Corner The MGF0805A, GaAs FET with an N-channel schottky Gate, is designed for MMDS/UMTS/WiMAX applications. FEATURES 4.2 mm • High output power : Po = 36.5 dBm typ.

smd z13

Abstract: of bt 1696 Z12 SMD
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF0805A L & S Band GaAs FET [ SMD non-matched ] DESCRIPTION Gate Mark Round Corner The MGF0805A, GaAs FET with an N-channel schottky Gate, is designed for MMDS/UMTS/WiMAX applications. FEATURES 4.2 mm • High output power : Po = 36.5 dBm typ.

s band

Contextual Info: < High-power GaAs FET small signal gain stage > MGF0952P L & S BAND / 4.5W SMD / Plastic Mold non - matched DESCRIPTION The MGF0952P GaAs FET with an N-channel schottky Gate, is designed for use L/S band amplifiers. FEATURES • High output power Po=36.5dBm(TYP.) @f=2.15GHz,Pin=25dBm

12W SMD

Contextual Info: < High-power GaAs FET small signal gain stage > MGF0951P L & S BAND / 1.2W SMD / Plastic Mold non - matched DESCRIPTION The MGF0951P GaAs FET with an N-channel schottky Gate, is designed for use L/S band amplifiers. FEATURES • High output power Po=31dBm(TYP.) @f=2.15GHz,Pin=20dBm

uhf 1kw amplifier

Abstract: MGF0916A
Contextual Info: MITSUBISHI SEMICONDUCTOR<GaAs FET> Preliminary MGF0916A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION OUTLINE DRAWING Unit:mm The MGF0916A GaAs FET with an N-channel schtokky Gate, is designed for use UHF band amplifiers. Gate Mark Round corner FEATURES

HS4424B

Abstract: 5962f0052101qxc IS1715 Rad Hard in MOSFET 9v smd transistor
Contextual Info: IS-1715ARH TM Data Sheet August 2000 Radiation Hardened Complementary Switch FET Driver File Number 4875 Features • Electrically Screened to SMD # 5962-00521 The Radiation Hardened IS1715ARH is a high speed, high current complementary power FET driver designed for use in

Contextual Info: < High-power GaAs FET small signal gain stage > MGF0919A L & S BAND / 1W SMD non - matched DESCRIPTION The MGF0919A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=30dBm(TYP.) @f=1.9GHz,Pin=12dBm

Contextual Info: < High-power GaAs FET small signal gain stage > MGF0919A L & S BAND / 1W SMD non - matched DESCRIPTION The MGF0919A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=30dBm(TYP.) @f=1.9GHz,Pin=12dBm

KGF2236

Abstract: k2236 J0124 16PSSOP TA 8644 12943
Contextual Info: This version: Jul. 1998 Previous version: — E2Q0056-18-73 ¡ electronic components KGF2236 ¡ electronic components KGF2236 Dual Monolithic GaAs Power FET GENERAL DESCRIPTION The KGF2236, housed in a SMD-type plastic package, is a dual monolithic GaAs power FET that

nxp pmgd780sn

Abstract: PMGD780SN
Contextual Info: PMGD780SN Dual N-channel TrenchMOS standard level FET Rev. 02 — 19 April 2010 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode field-effect transistor in a small SOT363 SC-88 Surface-Mounted Device (SMD) plastic package using TrenchMOS technology.

26mhz 6pin

Abstract: FET probe
Contextual Info: Temperature Compensated Crystal Oscillators Dual Output TCXO Surface Mount Type TCXO (LSI Type) KT2016M Series 2.0x1.6mm Features RoHS Compliant • Miniature SMD type (2.0×1.6×0.8mm) • Reflow compatible • AFC function available • 1.68 to 3.45V drive available

MGF0805A

Abstract: MITSUBISHI example s band
Contextual Info: < High-power GaAs FET small signal gain stage > MGF0805A L & S BAND / 4.5W SMD non - matched DESCRIPTION The MGF0805A, GaAs FET with an N-channel schottky gate, is designed for MMDS/UMTS/WiMAX applications. FEATURES • High output power Po=36.5dBm(TYP.)

MGF0919A

Contextual Info: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0919A L & S BAND GaAs FET [ SMD non – matched ] DESCRIPTION The MGF0919A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=30dBm TYP. @f=1.9GHz,Pin=12dBm

MGF0919A

Contextual Info: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0919A L & S BAND GaAs FET [ SMD non – matched ] DESCRIPTION The MGF0919A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=30dBm TYP. @f=1.9GHz,Pin=12dBm

mitsubishi 7805

Abstract: MGF0918A 14007
Contextual Info: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0918A L & S BAND GaAs FET [ SMD non – matched ] DESCRIPTION The MGF0918A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=27dBm TYP. @f=1.9GHz,Pin=8dBm

MGF0917A

Contextual Info: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0917A L & S BAND GaAs FET [ SMD non – matched ] DESCRIPTION The MGF0917A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=24dBm TYP. @f=1.9GHz,Pin=4dBm

MGF0920A

Contextual Info: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0920A L & S BAND GaAs FET [ SMD non – matched ] DESCRIPTION The MGF0920A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=32dBm TYP. @f=1.9GHz,Pin=15dBm

MGF0914A

Abstract: fet 4901 0648
Contextual Info: MITSUBISHI SEMICONDUCTOR<GaAs FET> Preliminary MGF0914A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION OUTLINE DRAWING Unit:mm The MGF0914A GaAs FET with an N-channel schtokky Gate, is designed for use UHF band amplifiers. Gate Mark Round corner FEATURES

MGF0913A

Contextual Info: MITSUBISHI SEMICONDUCTOR<GaAs FET> Preliminary MGF0913A L & S BAND GaAs FET [ SMD non - matched ] OUTLINE DRAWING DESCRIPTION Unit:mm Gate Mark Round corner The MGF0913A GaAs FET with an N-channel schtokky Gate, is designed for use UHF band amplifiers. FEATURES

Contextual Info: MITSUBISHI SEMICONDUCTOFkGaAs FET> Preliminary MGF0918A L & S BAND G a As FET [ SMD non - matched ] DESCRIPTION The MGF0918A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES High output power Po=27dBm TYP. @ f=1.9GHz,Pin=8dBm

Contextual Info: < High-power GaAs FET small signal gain stage > MGF0916A L & S BAND / 0.2W SMD non - matched DESCRIPTION The MGF0916A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=23dBm(TYP.) @f=1.9GHz,Pin=5dBm

Contextual Info: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0915A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION The MGF0915A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=36.5 dBm TYP. @f=1.9GHz,Pin=23dBm

9452 smd

Contextual Info: < High-power GaAs FET small signal gain stage > MGF0916A L & S BAND / 0.2W SMD non - matched DESCRIPTION The MGF0916A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=23dBm(TYP.) @f=1.9GHz,Pin=5dBm