6161002 Search Results

KM6161002J-15

Abstract: KM6161002J15 KM6161002J-20 KM6161002J KM6161002J-17
Contextual Info: CMOS SRAM 6161002 64K x 16 Bit High-Speed CMOS Static RAM GENERAL DESCRIPTION FEATURES • Fast Access Time 15,17,20 ns Max. • Low Power Dissipation Standby (TTL) : 40 mA(Max.) (CMOS): 10 mA(Max.) Operating 6161002J-15 : 230 mA(Max.) K M 6161002J-17: 220 mA(Max.)

intel 29F

Abstract: T7164 28F Intel LV6416 4c4007 5B810 32kxS 62832 dram cross reference T5C2568
Contextual Info: A Fast SRAM cross reference Vendor Cypress Hitachi Code ASCCode Description Code ASC Code CY 7C 185 A S7C 164 81x8 M C M 6264C AS7C164 8Kx8 CY 7C 199 A 57C 256 32K x8 M C M 6206D A S7C2S6 32K x8 C Y 7 C J3 9 9 A S7C 32S6 3 2 K * 8 3V M CM 62V06D A S7C 3256

Contextual Info: PRELIMINARY 6161002A CMOS SRAM 64 K x 16 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 12,15,17,20 ns Max. • Low Power Dissipation Standby (TTL) : 30 mA(Max.) (CMOS): 10 mA(Max.) Operating 6161002A-12 : 220 mA(Max.)

ATPA

Abstract: 7130SA100P 24l01 7C263/4-35C 7164S15Y cy9122-25 7133SA35J 7142sa55 7130sa55p cy2149-45c
Contextual Info: Product Line Cross Reference CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS CY2147-35C CY7C147-35C CY7C147-45C CY7C147-35C CY91L22-35C CY7C122-35C CY2147-45C CY2147-35C CY7C148-35C CY7C148-25C+ CY91L22-45C CY93L422AC CY2147-45C CY7C147-45C CY7C148-45C CY7C148-35C

Contextual Info: CMOS SRAM 6161002C/CL, 6161002CI/CLI lin û iû t TB’f I o 64Kx16 Bit High-Speed CMOS Static RAM 5.0V Operating Operated at Commercial and Industrial Temperature Range. Revision History Rev. No. History Rev. 0.0 Initial Draft Rev. 1.0 Relex DC characteristics

Contextual Info: 6161002 CMOS SRAM ELECTR O NICS 6 4 K x 1 6 B H High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 15,17,20 ns Max • Low Power Dissipation Standby (TTL) : 40 mA(Max.) (CMOS): 10 mA(Max.) Operating 6161002-15 : 230 mA(Max.)

EPM5128LC

Abstract: IDT CYPRESS CROSS REFERENCE clocks epm5064lc-1 EPM5128LC-1 EPM5064LC EPM5128LC-2 EPM5128GI EPM5128JC-1 8464c 5962-8871309
Contextual Info: Product Line Cross Reference CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS CY2148-35C CY21L48-35C CY7C168A-35C CY7C168A-25C 5962-8871309XX 5962-89839112X CY2148-35C CY7C148-35C CY7C168A-45M CY7C168A-35M+ 5962-8871310RX 5962-8983913RX CY2148-35M CY7C148-35M CY7C169A-35C

23C1001

Abstract: KMM5334100 km 23c 4000B KMM5362003C KM681001-25 KM68V257 KM428V256 23c4001 4100C M681000
Contextual Info: FUNCTION GUIDE MEMORY ICs 1. INTRODUCTION 1.1 Dynamic RAM 1Mx1 KM41C1000C-6 KM41C1000CL-6 KM41C1000CSL-6 256Kx4 4Mbit— 4Mx1 KM44C256C-6 KM44C256CL-6 KM44C256CL-7 KM 44C256CL-8 - KM44C256CSL-6 KM44C256CL-7 KM 44C256CL-8 — KM41C4000C-7 — KM41C4000C-8 KM41C4000C-5

Contextual Info: PRELIMINARY CMOS SRAM 6161002C/CL, 6161002CI/CLI iin c k n t T b’f I o 64Kx16 Bit High-Speed CMOS Static RAM 5.0V Operating Operated at Commercial and Industrial Temperature Range. Revision History Rev. No. History Rev. 0.0 Initial Draft Rev. 1.0 Relex DC characteristics

KXJ b1

Abstract: KM6161002C KM6161002CJ KM6161002CT 44so
Contextual Info: CMOS SRAM 6161002C/CL, 6161002CI/CLI Document Title 64Kx16 Bit High-Speed CMOS Static RAM 5.0V Operating Operated at Commercial and Industrial Temperature Range. Revision History Rev. No. History Rev. 0.0 Initial Draft Rev. 1.0 Relex DC characteristics

Contextual Info: CMOS SRAM 6161002 64K x 16 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 15,17,20 ns Max. • Low Power Dissipation S tandby (TTL) : 40 mA(Max.) (CMOS): 10 mA(Max.) Operating 6161002J-15 : 230 K M 61 6100 2J-1 7: 220

Contextual Info: 6161002A, 6161002AI CMOS SRAM Document Title 64Kx16 Bit High Speed Static RAM 5V Operating , Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range. Revision History Draft Data Remark Rev. No. History Rev. 0.0 Initial release with Preliminary.

KM616V4002A

Abstract: 6161002 ER255 KM732V589
Contextual Info: TABLE OF CONTENTS I. FUNCTION GUIDE 1. Product Guide. 11 2. Ordering Inform ation. 15

Contextual Info: 6161002A CMOS SRAM 64K x 16 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 12.15,17,20 r>s Max. • Low Power Dissipation Standby (TTL) : 30 mA(Max.) (CMOS): 10 mA(Max.) Operating 6161002A-12 : 220 mA(Max.) 6161002A-15 : 210 mA(Max.)

71h4

Abstract: KM6161002A KM6161002A-12 KM6161002A-15 KM6161002A-20 KM6161002AJ
Contextual Info: 6161002A CMOS SRAM 64 K x 16 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Tim e 1 2 ,1 5 ,1 7 ,2 0 ns M ax. • Low Pow er Dissipation Standby (TT L) : 3 0 m A(M ax.) (C M O S ): 10 m A(M ax.) Operating K M 6 1 6 1 00 2 A -1 2 : 2 2 0 m A(M ax.)

KM6161002A-12

Abstract: KM6161002AJ KM6161002A KM6161002A-15 KM6161002A-20 KM6161002AT
Contextual Info: Advanced Information CM O S SRAM 6161002A 65,536 WORDx16 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time : 12, 15, 17, 20ns max. • Low Power Dissipation Standby (TTL) : 30mA (max.) (CMOS) : 3mA (max.) . Operating : 6161002A-12 : 250mA (max.)

7414e

Contextual Info: Prelibine:”/ CMOS SRAM 6161002B/BL, 6161002BI/BLI 64K x 16 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION •• Fast Access Time 8,10,12» « Max. - Low Power Dissipation Standby (TTL) : 30* • (Max.) The 6161002B/BL is a 1,048,576-bit high-speed Static Ran­

TS 4142

Abstract: KM6161002A KM6161002A-12 KM6161002A-15 KM6161002A-20 KM6161002AJ utow
Contextual Info: PRELIMINARY 6161002A CMOS SRAM 64 K x 16 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 12,15,17,20 ns Max. • Low Power Dissipation Standby (TTL) : 30 mA(Max.) (CMOS): 10 mA(Max.) Operating 6161002A-12 : 220 mA{Max.)

KM616U1000BL-L

Contextual Info: MEMORY ICs FUNCTION GUIDE 1. Low Power SRAM 5V Operation Den. 256K Org. 32K X 8 Op. Temp Speed KM62256CL KM62256CL-L 0 -7 0 ’ C 4 5/55/70 KM62256CLE -2 5 -8 5 =C KM62256CLI KM62256CLI-L -4 0 -8 5 °C 1M 64K X 8 KM68512CL KM68512CL-L 0 -7 0 ‘ C KM68512CLI

EPM5128LC

Abstract: EPM5128GC epm5064lc-1 EPM5128LC1 59628867809r 5962-8984106LX EPM5128GI 7C19945DMB EPM5130GC-1 5962-8867812rx
Contextual Info: Product Line Cross Reference CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS 5962-8753903LX 5962-8753902LX CY21L49-55C CY21L49-45C CY7C281 CY7C281A 5962-8863701LX 5962-8753902LX CY6116A-45C CY6116A-35C CY7C286 CY27H512 5962-8867003LX 5962-8867002LX CY6116A-55C CY6116A-45C

Contextual Info: R r e fi^ in & r / 6161002B/BL, 6161002BI/BLI CMOS SRAM 6 4 K x 16 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION Fast Access Time 8,10,12*‘ Max. •• Low Power Dissipation The 6161002B/BL is a 1,048,576-bit high-speed Static Ran­

Contextual Info: KM68V1002A, KM68V1002AI CMOS SRAM Document Title 128Kx8 High Speed Static RAM 3.3V Operating , Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range. Revision History Rev. No. History Rev. 0.0 Initial release with Design Target. Jan. 18th, 1995

Contextual Info: KM68V1002A/AL, KM68V1002AI/ALI CMOS SRAM Document Title 128Kx8 High Speed Static RAM 3.3V Operating , Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range. Revision History Rev. No. History Rev. 0.0 Initial release with Design Target.