6427 TRANSISTOR Search Results

6427 darlington transistor

Abstract: Q68000-A8320
Contextual Info: NPN Silicon Darlington Transistor SMBT 6427 For general amplifier applications ● High collector current ● High current gain ● Type Marking Ordering Code tape and reel Pin Configuration 1 2 3 Package1) SMBT 6427 s1V Q68000-A8320 B SOT-23 E C Maximum Ratings

Contextual Info: SIEMENS NPN Silicon Darlington Transistor SMBT 6427 • For general amplifier applications • High collector current • High current gain Type Marking Ordering Code tape and reel PinCContigui ation 1 2 3 Package1) SMBT 6427 s1V Q68000-A8320 B SOT-23 E

6427 darlington transistor

Contextual Info: SIEMENS NPN Silicon Darlington Transistor SMBT 6427 • For general amplifier applications • High collector current • High current gain Type Marking Ordering Code tape and reel PinCtanfigu ration 1 2 3 Package1) S M B T 6427 s1V Q68000-A8320 B SOT-23

Contextual Info: BEE D • ö53b32Q QQ175SS b WÊSIP NPN Silicon Darlington Transistor SMBT 6427 _ SIEMENS/ SPCLi SEMICONDS T-Z'l -X*? _ • For general amplifier applications • High collector current • High current gain Type Marking Ordering code for versions in bulk

2SK784

Contextual Info: 6427 52 5 N E C ELECTRON ICS INC 98D 18928 N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR Tfl • t427S2S 3 I _ _ _ 2SK784 DESCRIPTION The 2SK784 is N-channel MOS Field Effect Power Transistor designed for switching power supplies DC-DC converters. FEA TU R ES

Contextual Info: Central' C M P T 6427 Sem iconductor Corp. NPN SILICON DARLINGTON TRANSISTOR DESCRIPTION: The CENTRAL S E M IC O N D U C T O R CMPT6427 type is a NPN Silicon Darlington Transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for applications

2SJ122

Abstract: 2SJ128-Z 3919
Contextual Info: 642 75 25 N E C N EC ELE CT RONIC S INC 98D 19027 ELECTRONICS INC ~ iß D T'-Jr-/? DE | b427555 001^057 3 y / lELETRGN DEVICE MOS FIELD EFFECT POWER TRANSISTOR . / Ä ^ ^ ^ Ä _ 2 S J 1 2 S - Z FAST SWITCHING P-CHANNE1 SILICON POW ER MOS FzT INDUSTRIAL USE

a42e

Abstract: IC 7410 sot-89 A63 CZT900K npn 2907A 2222a A77 SOT23 2222ae A92E 3906 npn
Contextual Info: Small Signal Transistors Surface Mount Packages Actual Size SOD-923 SOT-923 SOT-953 SOD-523 SOT-523 SOT-563 SOD-323 SOT-323 SOT-363 SOD-123 SOD-123F SOT-23 SOT-23F SOT-143 SOT-26 SOT-28 SOT-89 SOT-223 SOT-228 SMA SMB SMC SOIC-16 HD DIP TLP Tiny Leadless

transistor 2222a

Contextual Info: SERIES TPQ QUAD TRANSISTOR ARRAYS Series TPQ quad transistor arrays are general-purpose silicon transistor arrays consisting of four independent devices. All of these devices are furnished in a 14-pin dual in-line plastic package. The molded package is identical to that used with most

MPS3708

Abstract: 2N5812 2N5813 2N5816 2N5817 2N5818 2N5819 2N5822 2N5823 2N5830
Contextual Info: Small Signal Transistors TO-92 Case Continued TO-92 TY P E NO. FAM ILY LEAD v CBO v CEO h FE v EBO >CBO 48 v CBO « v CE @ lc TO-92-18R V CE(S; VT) 'C C „b *T NF ‘ off CO D E (V ) (V ) •TO-92-18R MIN *V C ES MIN (V ) (nA) MIN *'C E V (V ) (V )

2SK736

Contextual Info: R á 7 7 525 N E C E C ELECTRONICS INC ELE CT RO NI CS INC _ ~Tfl D T-3^ - 98D 18908 »F§m57S2S □□IflTOfl ñ N-CHANNEL M O S FIELD EFFECT POWER TRANSISTOR 2SK736 D ESCRIPTIO N The 2SK736 is N-Channel MOS Field Effect Power Transistor PA C KAG E D IM EN SIO N S

U15 transformer

Abstract: horizontal deflection circuit Horizontal-Deflection Output transformer CD 7640 1200 w 45 khz transformer IC 3263 datasheet 6 pins IC cbe CU15/35 philips 1n4148 1N4148
Contextual Info: Crop here for Mid-Atlantic paper size DISCRETE SEMICONDUCTORS FACT SHEET 078 Horizontal deflection transistors for 17", 70 kHz monitors Using Philips’ CU15/35 drive transformer and BU4525AF/AX transistor Most 17" monitor designs for PCs are required to operate up

CD 7640

Abstract: U15 transformer horizontal deflection circuit nf 817 1N4148 BC337A BY359X-1500S BYV28-50 BZX79C6V8 philips BC
Contextual Info: Crop here for Mid-Atlantic paper size DISCRETE SEMICONDUCTORS FACT SHEET 078 Horizontal deflection transistors for 17", 70 kHz monitors Using Philips’ CU15/35 drive transformer and BU4525AF/AX transistor Most 17" monitor designs for PCs are required to operate up

DM74LS365A

Abstract: DM74LS365AN 54LS365A 54LS365ADMQB 54LS365AFMQB 54LS365ALMQB DM54LS365A DM54LS365AJ DM54LS365AW DM74LS265AM
Contextual Info: 54LS365A DM54LS365A DM74LS365A Hex TRI-STATE Buffers General Description This device contains six independent gates each of which performs a non-inverting buffer function The outputs have the TRI-STATE feature When enabled the outputs exhibit the low impedance characteristics of a standard LS output

Contextual Info: Philips Semiconductors’ new SiliconMAXTM power MOSFET range - a next generation development of the company’s advanced TrenchMOS technology - brings the benefits of ultra-low RDS on and high-speed switching to applications requiring transistors with voltage

AN 6752

Abstract: msc925 AN 6752 japan
Contextual Info: Crop here for Mid-Atlantic paper size DISCRETE SEMICONDUCTORS FACT SHEET NIJ004 Double Polysilicon – the technology behind silicon MMICs, RF transistors & PA modules Higher frequencies and greater levels of integration for mobile communications emitter base

STR 6707

Abstract: bf872
Contextual Info: DISCRETE SEMICONDUCTORS BF872 PNP high-voltage transistor 1999 Apr 21 Product specification Supersedes data of 1998 Sep 21 Philips Semiconductors PHILIPS PHILIPS Philips Semiconductors Product specification PNP high-voltage transistor BF872 FEATURES • Low feedback capacitance.

philips e3

Abstract: BP317 BU506 BU506D BU508D
Contextual Info: DISCRETE SEMICONDUCTORS Philips Semiconductors Product specification Silicon diffused power transistors BU506; BU506D DESCRIPTION High-voltage, high-speed, switching NPN power transistor in a TO-220AB package. The BU506D has an integrated efficiency diode.

2108 npn transistor

Abstract: TRANSISTOR D 471 2PC945P
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET ndbook, halfpage M3D186 2PC945 NPN general purpose transistor Product specification Supersedes data of 1997 Mar 26 1999 May 28 Philips Semiconductors Product specification NPN general purpose transistor 2PC945 FEATURES PINNING

bc516

Abstract: bc517 BC517 data sheet
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC516 PNP Darlington transistor Product specification Supersedes data of 1997 Apr 16 1999 Apr 23 Philips Semiconductors Product specification PNP Darlington transistor BC516 FEATURES PINNING • High current max. 500 mA

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D187 2PD1820A NPN general purpose transistor Product specification Supersedes data of 1997 May 22 1999 Apr 12 Philips Semiconductors Product specification NPN general purpose transistor 2PD1820A FEATURES

2108 npn transistor

Abstract: 2PC1815 TRANSISTOR D 471
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2PC1815 NPN general purpose transistor Product specification Supersedes data of 1997 Mar 28 1999 May 28 Philips Semiconductors Product specification NPN general purpose transistor 2PC1815 PINNING FEATURES

bc517

Abstract: StR 40000 or transistor transistor BC517
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC517 NPN Darlington transistor Product specification Supersedes data of 1997 Apr 23 1999 Apr 23 Philips Semiconductors Product specification NPN Darlington transistor BC517 FEATURES PINNING • High current max. 500 mA

marking code IC .ztz

Abstract: ZtZ MARKING PUMX1 marking ztz sot363
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage MBD128 PUMX1 NPN general purpose double transistor Preliminary specification Supersedes data of 1997 Jul 09 1999 Apr 14 Philips Semiconductors Preliminary specification NPN general purpose double transistor