Untitled
Abstract: No abstract text available
Text: Tekmos TK89C668 Microcontroller DS015 V1.3 January 30, 2013 Product Overview Features 64K Flash, 8K RAM, TWI General Description The TK89C668 is based on the 8051microcontroller architecture. With 64Kx8 of Flash memory and 8Kx8 of internal RAM, these parts are
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TK89C668
DS015
8051microcontroller
64Kx8
P89C668
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Untitled
Abstract: No abstract text available
Text: MX27C512 512K-BIT [64Kx8] CMOS EPROM FEATURES • • • • • • 64K x 8 organization Single +5V power supply +12.5V programming voltage Fast access time: 45/55/70/90/100/120/150ns Totally static operation Completely TTL compatible • Operating current: 30mA
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MX27C512
512K-BIT
64Kx8]
45/55/70/90/100/120/150ns
100uA
MX27C512
512K-bit,
MAR/02/2000
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KM68V512ALTE-10L
Abstract: 64Kx8 CMOS RAM KM68U512ALE-L
Text: KM68V512A, KM68U512A Family CMOS SRAM Document Title 64Kx8 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Design target January 17, 1996 Advance 0.1 Initial draft - One datasheet for commercial, extended and industrial product.
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KM68V512A,
KM68U512A
64Kx8
KM68V512A
32-sTSOP
KM68V512ALTE-10L
64Kx8 CMOS RAM
KM68U512ALE-L
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Untitled
Abstract: No abstract text available
Text: S PR512A SP 64Kx8 Bits Bus Flash Preliminary OCT. 01, 2003 Version 0.4 SUNPLUS TECHNOLOGY CO. reserves the right to change this documentation without prior notice. Information provided by SUNPLUS TECHNOLOGY CO. is believed to be accurate and reliable. However, SUNPLUS TECHNOLOGY CO. makes no warranty for any errors which may appear in this document.
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SPR512A
64Kx8
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8512A
Abstract: A12C A15C KM68512A KM68512AL KM68512ALI KM68512ALI-L KM68512AL-L A2ND
Text: KM68512A Family CMOS SRAM 64Kx8 bit Low Power CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • • • • • • The KM 68512A fam ily is fabricated by SAM SUNG'S advanced CM O S process technology. The fam ily can support various operating tem perature ragnges
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KM68512A
64Kx8
32-SOP,
32-TSOP
23b27
8512A
A12C
A15C
KM68512AL
KM68512ALI
KM68512ALI-L
KM68512AL-L
A2ND
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static ram 64kx8
Abstract: No abstract text available
Text: m o EDI8M864C90/100/120/150 i High Performance 512K SRAM Module 64Kx8 Static RAM CMOS, Module Features The EDI8M864C is a 512K bit CMOS Static RAM based on two 32Kx8 Static RAMs in leadless chip carriers mounted on a multi-layered ceramic substrate. The EDI8M864C has an on-board decoder circuit that
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EDI8M864C90/100/120/150
64Kx8
EDI8M864C
32Kx8
MIL-STD-883C,
EDI8M864C90/100/120/150
static ram 64kx8
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6755w
Abstract: No abstract text available
Text: Ju ly 1998 s e m ic o n d u c t o r FM27LV512L 524,288-Bit 64Kx8 Low Voltage, Low Power EPROM General Description • Programming Voltage +12.75V ■ Typical programming time 50|is The FM27LV512 is a low voltage, low-power 512Kbit, 3.3V-only one-time-programmable (OTP) read-only memory (EPROM), or
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FM27LV512L
288-Bit
64Kx8)
FM27LV512
512Kbit,
150ns,
6755w
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Untitled
Abstract: No abstract text available
Text: KM68V512A, KM68U512A Family CMOS SRAM 64Kx8 bit Low Power & Low Vcc CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.6 um CMOS • Organization : 64K x 8 • Power Supply Voltage KM68V512A family : 3.3V +/- 0.3V KM68U512A family : 3.0V +/- 0.3V
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KM68V512A,
KM68U512A
64Kx8
KM68V512A
32-SOP,
32-TSOP
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Untitled
Abstract: No abstract text available
Text: KM68512A Family CMOS SRAM 64Kx8 bit Low Power CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.6 um CMOS The KM68512A family is fabricated by SAMSUNG'S • Organization : 64K x8 advanced CMOS process technology. The family • Power Supply Voltage : Single 5V +/-10%
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KM68512A
64Kx8
32-SOP,
32-TSOP
DG23b27
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Untitled
Abstract: No abstract text available
Text: KM68512A Family CMOS SRAM 64Kx8 bit Low Power CMOS Static RAM FEATURES GENERAL DESCRIPTION •• Process Technology : 0.6» • CMOS Organization : 64Kx8 - Power Supply Voltage : Single 5V • • 10% •• Low Data Retention Voltage : 2V Min ~ Three state output and TTL Compatible
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KM68512A
64Kx8
64Kx8
32-SOP,
32-TSOP
7Tb4142
525mil)
32-THlN
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27C512N
Abstract: No abstract text available
Text: I R C H I L D April 1998 S E M I C O N D U C T O R TM 524,288-Bit 64K FM27C512L 524,288-Bit (64Kx8 Low Power Fast EPROM • Programming V o lta g e +12.75V General Description ■ Typical programm ing time 50|is The FM27C512 is a low -pow er 512Kbit, 5V-only one-tim e-program m able (OTP) read-only m em ory (EPROM), organized into
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FM27C512L
FM27C512L
288-Bit
64Kx8)
FM27C512
512Kbit,
27C512
256Kb
27C512N
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M5M5512FP-70LL
Abstract: SS12R 32P3H- E 1008BP-7QL
Text: Memory Configuration Memoty capacity Max. access time us Function mod» 45 with (SÏ, S2, ÒE) Icc (Power down) = 10 /x A (max) 55 = 0.1 mA (typ) 70 512K 64Kx8 45 i with (SÏ. S2, ÔE) Icc (Power down) = 5 ft A (max) = 0.1 !x 55 A (typ) 70 55 with (SÏ, S2, OË)
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M5MSS12P-45LL
M5M5512FP-45UL
5512VP-45LL
M5M5512RV-45LL
12KV-45LL
S512KR-45LL
M5M5512P-55U.
M5M5512VP-55LL
M5MS512RV-55UM5M55I2KV-55LL
12KR-5SLL
M5M5512FP-70LL
SS12R
32P3H- E
1008BP-7QL
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CAT71C256L-85
Abstract: cat22c12 CAT27HC256 cerdip z PACKAGE lb2f 64KX16 CAT27C210 CAT28F010 CAT28F512 4Q91
Text: CATALYST SEMICONDUCTOR 1 Device fl CAT28F010 Temp Range » • OOOIB'ÌS Access Time ns Size (Organization) CS T Pkg Types # Pins (Max/Standby) 1 ■ T-90-30 Availability C 1MBit 120/150/200 30mA/100nA 32 P,N 4Q91 CAT28F512 C 512KBit <64Kx8) 200/250 50mA/500pA
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T-90-30
CAT28F010
12SKx8)
30mA/100
CAT28F512
512KBit
64Kx8)
50mA/500pA
CAT28F512V5
CAT71C256L-85
cat22c12
CAT27HC256
cerdip z PACKAGE
lb2f
64KX16
CAT27C210
4Q91
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S634000
Abstract: S63512 S63256
Text: Static CMOS Family ol ROMs AIM!•Semiconductors March 1992 Table 1 continued : AMI LOW DENSITY FAMILY OF ROMS S63256 S63512 S631000/S631001 S632000 S634000 Process CMOS CMOS CMOS CMOS CMOS Capacity 256K/128K 512K 1 Meg 2 Meg 4 Meg Organization 32Kx8 64Kx8
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S63256
256K/128K
32Kx8
S63512
64Kx8
S631000/S631001
S632000
S634000
512Kx8
0014GS4
S634000
S63512
S63256
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AS7C512-20JC
Abstract: AS7C512-15pc AS7C512 10n12 AS7C512-12JC 7C256 AS7C512L AS7CS12 Static Random Access Memory SRAM 7CS12-20
Text: High-Performance p i AS7C512 : AS7C512L CMOS SRAM 64Kx8 CMOS SRAM Common I/O FEATURES Organization; 65,536 words x 8 bits Equal access and cycle times High speed Easy memory expansion with CE1, CE2, OE inputs - 12/15/20/25/35 ns address access time TTL-compatible, three-state I/O
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AS7C512
AS7C512L
64Kx8
32-pin
7C256
7C1024
AS7C512-20JC
AS7C512-15pc
AS7C512
10n12
AS7C512-12JC
AS7C512L
AS7CS12
Static Random Access Memory SRAM
7CS12-20
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1N914
Abstract: A14C N28B NM27C512 VA32A
Text: Ju ly 1998 S E M IC O N D U C TD R tm FM27LV512L 524,288-Bit 64Kx8 Low Voltage, Low Power EPROM General Description • Program ming Voltage +12.75V ■ Typical programm ing tim e 50ns The FM27LV512 is a low voltage, low-power 512Kbit, 3.3V-only one-tim e-program m able (OTP) read-only memory (EPROM), or
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FM27LV512L
288-Bit
64Kx8)
FM27LV512
512Kbit,
150ns,
512Kb
150ns
1N914
A14C
N28B
NM27C512
VA32A
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27C512N
Abstract: No abstract text available
Text: PRELIMINARY S E M I C O N D U C T O R TM FM27C512L 524,288-Bit 64Kx8 Low Power Fast EPROM General Description FM27C512L P A .P C H .L D • Programming Voltage +12.75V ■ Typical programming time 50ns The FM27C512 is a low-power 512Kbit, 5V-only one-time-programmable (OTP) read-only memory (EPROM), organized into
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FM27C512L
FM27C512L
288-Bit
64Kx8)
FM27C512
512Kbit,
256Kb
27C512N
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KM68U512ALE-L
Abstract: KM68V512ALTE-10L KM68V512ALE-L 85FV 32-STSOP
Text: KM68V512A, KM68U512A Family CMOS SRAM 64Kx8 bit Low Power and Low Voltage CMOS Static RAM FEATURES GENERAL DESCRIPTION • Process Technology : 0.6pm CMOS • Organization : 64Kx8 • Power Supply Voltage KM60V512A family : 3.3VKJ.3V KM68U512A family : 3.0V±0.3V
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KM68V512A,
KM68U512A
64Kx8
64Kx8
KM60V512A
32-SOP-525,
32-T30P1-0820F,
32-TSOP1-Q813
KM68V512A
KM68U512ALE-L
KM68V512ALTE-10L
KM68V512ALE-L
85FV
32-STSOP
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ELL04
Abstract: No abstract text available
Text: Advance K M 6 8 V 5 1 2 B , K M 6 8 U 5 1 2 B Fami l y D o c u m e n t CMOS SRAM liti 64Kx8 bit Low Power and Low Voltage C M O S Static RAM R evisio n No. H is to ry D raft Data D esign ta rg e t N o ve m b e r 25th 1997 Remark A dvance T h e attached da ta she ets are prepared and a p p ro ve d by S A M S U N G E lectronics. S A M S U N G E lectro nics C O ., LTD. re se rve the
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64Kx8
68V512B
ELL04
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KM736V789T-60
Abstract: 8AEL 65z7 KM68U512ALE-L KM736V689T-8 KM732V595AT KMB16 36SOJ KM68U4000A KM68V2000L-8L
Text: MEMORY tCs FUNCTION GUIDE 1. SRAM PRODUCT TREE 1.1.1. Low Power 5.0V Operation SRAM 256Kb» 32KX8 KM62256CI-5/5L KM622S6CL-7/7L KM62256CLE -7/71 KM62256CLI-7/7L KM62256DL-5/5L KM62256DL-7/7L KM62256DLI-7/7L 512Kb» KM68512AL-5/5L 64Kx8 KM88512AL-7/7L KM68S»2ALf-7/7L
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256Kb»
32KX8
KM62256CI-5/5L
KM62256CLE
KM62256CLI-7/7L
KM62256DL-5/5L
KM62256DLI-7/7L
512Kb»
64Kx8
KM68512AL-5/5L
KM736V789T-60
8AEL
65z7
KM68U512ALE-L
KM736V689T-8
KM732V595AT
KMB16
36SOJ
KM68U4000A
KM68V2000L-8L
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D28F512
Abstract: flash eeprom D28F010
Text: SEEQ TECHNOLOGY FLASH EEPROM ALTERNATE SOURCE DIRECTORY Alternate Manufacturer INTEL INTEL NATIONAL NATIONAL Functionally Configuration Part# 6 4KX8 128K X 8 64KX8 128K X 8 D28F512 D28F010 MC48F512 MC48F010 1024K Flash EEPROM Technology, Incorporated 2-1 Equivalent
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D28F512
D28F010
MC48F512
MC48F010
64KX8
48F512
48F010
48F010
1024K
flash eeprom
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Untitled
Abstract: No abstract text available
Text: KM68512A Family CMOS SRAM 64Kx8 bit Low Power CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • P ro ces s T e c h n o lo g y : 0 .6 um C M O S T h e K M 6 8 5 1 2 A fa m ily is fa b ric a te d by S A M S U N G 'S • O rg a n iz a tio n : 6 4 K x 8
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KM68512A
64Kx8
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KM23C512
Abstract: No abstract text available
Text: KM23C512 G CMOS MASK ROM 512K-Bit (64Kx8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • KM23C512: 28 pln DIP (Polarity programmable chip enable pin and output enable pin) • KM23C512G: 32-pln SOP (Polarity programmable chip enable pin and output enable pin)
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KM23C512
512K-Bit
64Kx8)
KM23C512:
KM23C512G:
32-pln
120ns
100pA
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uPD23C4000
Abstract: 93c46 atmel sony Cross Reference atmel 93c66 HN62404P 93C46L rom at29c010 Hitachi SRAM cross reference x2864a UPD23C2000
Text: MEMORY ICs CROSS REFERENCE GUIDE 3. C R O S S REFEREN CE GUIDE 3.1 Video RAM Density 256K 512K Feature Minimum Organization 64Kx4 Samsung KM424C64 Minimum 64Kx8 KM428C64 Minimum 256KX4 KM424C256 Micron Hitachi Ti HM53461 2 TMS4461 HM534251 TM S44C250 TC524256A
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64Kx4
KM424C64
MT42C4064
uPD41264
uPD42264
HM53461
TMS4461
64Kx8
256KX4
KM428C64
uPD23C4000
93c46 atmel
sony Cross Reference
atmel 93c66
HN62404P
93C46L
rom at29c010
Hitachi SRAM cross reference
x2864a
UPD23C2000
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