64K DRAM Search Results

KM428C64

Abstract: "Video RAM" Video RAM
Contextual Info: KM428C64 CMOS VIDEO RAM 64K X 8 Bit CMOS Video RAM FEATURES GENERAL DESCRIPTION Dual port Architecture 64K x 8 bits RAM port 256 x 8 bits SAM port Performance range : . Parameter Speed . RAM access time tR A c RAM access time (tc A c ) The Samsung KM428C64 is a CMOS 64K x 8 bit Dual Port

Contextual Info: MT4C1664/5 64K X 16 D R AM MICRON DRAM 64K x 16 DRAM FAST PAGE MODE • Industry standard xl6 pinouts, timing, functions and packages • High-performance, CMOS silicon-gate process • Single +5V±10% power supply • Low power, 3mW standby; 225mW active, typical

am9064

Abstract: cvp 45 Am90C644
Contextual Info: Am90C644 64K X 4 CMOS DUAL-ARRAY MEMORY ADVANCE INFORMATION 64K x 4 organization High-speed access: tpAC - 1 00 ns Write-per-Bit mask allows separatewrite controls for each of the four DRAM input bits On-chip video shifter with up to 100Megapixel/sec. bandwidth

as42c4064

Abstract: vram dual port Dual Port V-RAM
Contextual Info: AS42C4064 883C 64K x 4 VRAM AUSTIN SEMICONDUCTOR, INC. Limited Supply - Consult Factory 64K x 4 DRAM WITH 256 x 4 SAM VRAM AVAILABLE AS MILITARY SPECIFICATION PIN ASSIGNMENT Top View • MIL-STD-883 24-Pin DIP (D-11) FEATURES • • • • • • •

Contextual Info: AS42C4064 883C 64K X 4 VRAM AUSTIN SEMICONDUCTOR, INC. Limited Supply - Consult Factory VRAM 64K x 4 DRAM WITH 256 x 4 SAM AVAILABLE AS MILITARY SPECIFICATION PIN ASSIGNMENT Top View • M IL-STD-883 24-Pin DIP (D-11) FEATURES Industry standard pinout, tim ing and functions

Contextual Info: MT4C1670/1 L 64K X 16 DRAM |U |IC =R O N 64K x 16 DRAM STATIC COLUMN MODE, LOW POWER, EXTENDED REFRESH FEATURES PIN ASSIGNMENT Top View • Industry standard x l6 pinouts, tim ing, functions and packages • High-perform ance, CM OS silicon-gate process

Contextual Info: AUSTIN SEMICONDUCTOR, INC. DRAM AS4C4067 883C 64K X 4 DRAM 64K x 4 DRAM FAST PAGE MODE AVAILABLE AS MILITARY SPECIFICATION PIN ASSIGNMENT Top View SMD 5962-92132 MEL-STD-883 18-Pin DIP FEATURES Industry standard pinout and timing All inputs, outputs and clocks are fully TTL

Contextual Info: HIGH-SPEED 3.3V 64K x 16 BANK-SWITCHABLE DUAL-PORTED SRAM WITH EXTERNAL BANK SELECTS PRELIMINARY IDT70V7288S/L Features 64K x 16 Bank-Switchable Dual-Ported SRAM Architecture processor communications; interrupt option Interrupt flags with programmable masking

Contextual Info: Integrated D evice Technology, Inc. 64K x 32, 3.3V SYNCHRONOUS SRAM WITH PIPELINED OUTPUTS AND INTERLEAVED/LINEAR BURST COUNTER, SINGLE CYCLE DESELECT PRELIMINARY IDT71V632 FEATURES: DESCRIPTION: • 64K x 32 m em ory configuration • Supports high system speed:

Contextual Info: MT4C1664/5 L 64K X 16 DRAM I^ IIC R O N 64K x 16 DRAM DRAM LOW POWER EXTENDED REFRESH FEATURES • Industry standard x l6 pinouts, timing, functions and packages • High-perform ance, CM OS silicon-gate process • Single +5V ±10% power supply • All device pins are fully TTL compatible

92132

Abstract: 64kx4 AS4C4067 1CP-N15 CSH110
Contextual Info: AUSTIN SEMICONDUCTOR, INC. a s 4C4067 64K X 883C 4 DRAM 64K x 4 DRAM DRAM FAST PAGE MODE AVAILABLE AS MILITARY SPECIFICA TIO N • • PIN ASSIGNMENT Top View S\1D 5962-92132 MIL-STD-883 18-Pin DIP FEATURES • • • • • • • • Industry standard pinout and timing

Contextual Info: MT4C4067 883C 64K x 4 DRAM AUSTIN SEMICONDUCTOR, INC. DRAM 64K x 4 DRAM FAST PAGE MODE AVAILABLE AS MILITARY SPECIFICATION PIN ASSIGNMENT Top View • SMD 5962-92132 • MIL-STD-883 18-Pin DIP (D-6) FEATURES • Industry standard pinout and timing • All inputs, outputs and clocks are fully TTL

Contextual Info: GLT41016-10E 64k x 16 Embedded EDO DRAM FEATURES ◆ Logical organization: 64k x 16 bits ◆ Physical organization: 256 x 256 x 16 ◆ Single 3.3V ± 0.3V power supply ◆ 256 cycle refresh in 4 ms ◆ Refresh modes: RAS only, CBR, and Hidden ◆ Dual CAS for Byte Write and Byte Read control

AIC6250

Abstract: AIC-6110
Contextual Info: adaptec A l O - f i l “1 H U I I U Single-Chip SCSI Mass Storage Controller I x IU DATA BUFFER SRAM 64K MAX DRAM 64K MAX I SCSI BUS 8 MB/sec 3.5/2.5 INCH HARD DISK AIC-6110 5 MB/sec MASS STORAGE CONTROLLER 24 Mb/sec DATA SEPARATOR MICROPROCESSOR INTEL 80C196

DALLAS DS80C320

Abstract: DS80C320-QCG T movx 80C32 DS80 DS80C320 DS80C320-FCG DS80C320-FNG DS80C320-QCG QDG775S
Contextual Info: DS80C320 DALLAS SEMICONDUCTOR FEA TU R ES • 80C32-Compatible - Pin-compatible Standard 8051 instruction set - F our8-bit I/O ports Three 16-bit timer/counters 256 bytes scratchpad RAM Multiplexed address/data bus Addresses 64K bytes ROM and 64K bytes RAM

GLT41016-10E

Abstract: GLT44016
Contextual Info: GLT41016-10E 64k x 16 Embedded EDO DRAM FEATURES ◆ Logical organization: 64k x 16 bits ◆ Physical organization: 256 x 256 x 16 ◆ Single 3.3V ± 0.3V power supply ◆ 256 cycle refresh in 4 ms ◆ Refresh modes: RAS only, CBR, and Hidden ◆ Dual CAS for Byte Write and Byte Read control

4264 dram

Contextual Info: MICRON T E C H N O L O G Y INC 55E D • blllS4'ì DDDSb?^ 153 ■ MRN PRELIMINARY W1T4C4264 883C 64K X 1 DRAM | W |! C R Q N MILITARY DRAM 64K X 1 DRAM FAST PAGE MODE AVAILABLE AS MILITARY SPECIFICATIONS PIN ASSIGNMENT Top View • MIL-STD-883, Class B

s89c

Abstract: MT4C4067 64k DRAM
Contextual Info: MICRON TECHNOLOGY INC SSE D 0 0 Q5 7 2 7 7 3 b • MRN b lllS H T PRELIMINARY MT4C4067 883C 64K X 4 DRAM IC R Ü N MILITARY DRAM 64K X 4 DRAM FAST PAGE MODE AVAILABLE AS MILITARY SPECIFICATION PIN ASSIGNMENT Top View • MIL-STD-883, Class B 18-Pin DIP (D -6)

Contextual Info: SAM S UN G E L E C T R O N I C S INC b7E D • 7=11,4145 G O l b S D ? 3T4 H S M ä K KM428C64 CMOS VIDEO RAM 64K X 8 Bit CMOS Video RAM FEATURES ■ Dual port Architecture 64K x 8 bits RAM port 256 x 8 bits SAM port - Performance range : The Samsung KM428C64 is a CMOS 64K x 8 bit Dual Port

A101

Abstract: CY7C1333F CY7C1333F-100AC
Contextual Info: CY7C1333F 2-Mbit 64K x 32 Flow-through SRAM with NoBL Architecture Functional Description[1] Features • Can support up to 117-MHz bus operations with zero wait states. Data is transferred on every clock. The CY7C1333F is a 3.3V, 64K x 32 Synchronous

A101

Abstract: CY7C1333F CY7C1333F-100AC 20306
Contextual Info: CY7C1333F 2-Mbit 64K x 32 Flow-through SRAM with NoBL Architecture Functional Description[1] Features • Can support up to 117-MHz bus operations with zero wait states. Data is transferred on every clock. The CY7C1333F is a 3.3V, 64K x 32 Synchronous

20306

Contextual Info: CY7C1333F 2-Mbit 64K x 32 Flow-through SRAM with NoBL Architecture Functional Description[1] Features • Can support up to 117-MHz bus operations with zero wait states. Data is transferred on every clock. The CY7C1333F is a 3.3V, 64K x 32 Synchronous

Contextual Info: CY7C1333F 2-Mbit 64K x 32 Flow-through SRAM with NoBL Architecture Functional Description[1] Features • Can support up to 117-MHz bus operations with zero wait states. Data is transferred on every clock. The CY7C1333F is a 3.3V, 64K x 32 Synchronous

Contextual Info: CMOS VIDEO RAM ÍM424C64 6 4 K X 4 Bit CMOS VIDEO RAM FEATURES GENERAL DESCRIPTION • Dual Port A rchitecture 64K x 4 bits R AM port The Samsung KM424C64 is a CMOS 64K x 4 bit Dual Port DRAM. It consists of a 6 4 K x 4 dynamic random access memory RAM port and 256 x 4 static serial •