64K NMOS STATIC RAM Search Results
64K NMOS STATIC RAM Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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DF2B5M4ASL |
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TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-962 (SL2) |
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DF2B5PCT |
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TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-882 (CST2) |
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DF2B6M4ASL |
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TVS Diode (ESD Protection Diode), Bidirectional, +/-5.5 V, SOD-962 (SL2) |
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DF2B7PCT |
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TVS Diode (ESD Protection Diode), Bidirectional, +/-5.5 V, SOD-882 (CST2) |
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DF2B7AFS |
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TVS Diode (ESD Protection Diode), Bidirectional, +/-5.5 V, SOD-923, AEC-Q101 |
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64K NMOS STATIC RAM Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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MB81C84A-35
Abstract: MB81C84 mb81c84a
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MB81C84A-25/-35 256K-BIT MB81C84A MB81C84A-25 MB81C84A-35 24-LE DIP-24P-M MB81C84A-35 MB81C84 | |
NMC4864Contextual Info: , PREVIEW NMC4864 64k Pseudo-Static Byte-Wide RAM NMC4864 NMOSRAMs National Semiconductor Features General Description • The NMC4864 is a single 5V power supply pseudo-static NMOS RAM organized a?;8l92w ords by S ijrtS jT h e c irc u it ■ uses singie -tra nslstor dynam ic sto ra g e 'ce lls w ith inte r |
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NMC4864 NMC4864 8l92w | |
a5 gnd
Abstract: NTE4164 NTE2117 NTE2164 BB 298 NTE2102 64k dynamic RAM 64k nmos static ram NTE2114 NTE2128
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NTE2056 16-Lead NTE2102 350ns NTE2104 200ns NTE2107 22-Lead a5 gnd NTE4164 NTE2117 NTE2164 BB 298 64k dynamic RAM 64k nmos static ram NTE2114 NTE2128 | |
NTE6802
Abstract: NTE6532
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NTE6507 28-Lead NTE6532 40-Lead NTE6508 16-Lead 300ns NTE6802 NTE6532 | |
LM33256
Abstract: LM33256N 64K x 8 BIT DYNAMIC RAM LM33256K sanyo LC3564PL lc3664* sanyo LC324256 4m static ram 8K Static RAM 16k nmos dynamic ram
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0QD75b3 150ns, versionofLC3518B ofLC3518B ofLC3518BL 120ns, LM33256 LM33256N 64K x 8 BIT DYNAMIC RAM LM33256K sanyo LC3564PL lc3664* sanyo LC324256 4m static ram 8K Static RAM 16k nmos dynamic ram | |
IDT71258Contextual Info: CMOS STATIC RAM 256K 64K x 4-BIT ADVANCE INFORMATION IDT71258 Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • High-speed (equal access and cycle time) — Military: 25/35/45/55ns (max.) — Commercial: 20/25/35/45ns (max.) • Low-power operation |
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IDT71258 25/35/45/55ns 20/25/35/45ns IDT71258S 400mW IDT712581Active: 350mW 24-pin, 24-pin 28-pin IDT71258 | |
Contextual Info: MICROPROCESSOR & MEMORY CIRCUITS INCLUDES PERIPHERALS NTE2056 16-Lead DIP, See Diag. 249 8-B it Multiplying D/A Converter Range Control 0 Compensation A6 n 0 A7 0 V ret(-) A 5B ^ A1 Q 0 A8 (LSB) A2 B 0 Data Out a: Q A7 A3 Q Q Data In A 2 g 0 A6 A4 Q j A0 Q |
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NTE2056 16-Lead NTE2102 350ns NTE2104 200ns NTE2107 22-Lead | |
K4505
Abstract: 1601l 4Kx4 SRAM MK48T87B Z30A SRAM 2kx8 sram IMS1630 256KX1 MK41S80
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IMS1203 IMS1203M IMS1223 IMS1223M 16Kx1 IMS1400M IMS1403 IMS1403M/LM K4505 1601l 4Kx4 SRAM MK48T87B Z30A SRAM 2kx8 sram IMS1630 256KX1 MK41S80 | |
PT 1017Contextual Info: CMOS STATIC RAM 256K 64K x 4-BIT ADVANCE INFORMATION IDT71258 Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • High-speed (equal access and cycle time) — Military: 25/35/45/55ns (max.) — Commercial: 20/25/35/45ns (max.) • Low-power operation |
OCR Scan |
IDT71258 25/35/45/55ns 20/25/35/45ns IDT71258S 400mW 400nW IDT712581Active: 350mW 100jiW 24-pin, PT 1017 | |
XDH10
Abstract: S4125
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25/35/45/55/70ns 20/25/35/45/55/ns IDT71258S 400mW IDT712581Active: 350mW 100mW 24-pln, 24-pin 28-pin XDH10 S4125 | |
71282
Abstract: MIL-STD-8831
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IDT71281S/L IDT71282S/L IDT71281S/L: IDT71282S/L: 30/35/45/55ns 25/35/45ns IDT71281/2S 400mW IDT71281/2L 350mW 71282 MIL-STD-8831 | |
AK41128
Abstract: AK42064
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OCR Scan |
150ns AK41128 AK42064 | |
Contextual Info: irrteT ADWAN ! OMIFÜKßMTTOOM M51C259HL HIGH PERFORMANCE LOW POWER STATIC COLUMN 64K x 4 CHMOS DYNAMIC RAM Military Maximum Access Time ns) M51C259HL-15 M51C259HL-20 150 200 Maximum Column Address Access Time (ns) 70 90 Maximum CHMOS Standby Current (mA) |
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M51C259HL M51C259HL-15 M51C259HL-20 M51C259HL | |
s4141
Abstract: 2L20 S4140 2S20 DSC1018
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IDT71281S/L: T71282S/L: T71281/2S T71281/2L MIL-STD-883, S4-142 s4141 2L20 S4140 2S20 DSC1018 | |
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KM424C256Z
Abstract: SIMM 30-pin 30-pin SIMM RAM KM41C256P KM44C256bp KM41C1000BJ 257J KM44C256BZ 1K x4 static ram 30-pin simm memory "16m x 8"
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KM4164BP KM41C256P KM41C256J KM41C256Z KM41C257P KM41C257J KM41C257Z KM41C258P KM41C258J KM41C258Z KM424C256Z SIMM 30-pin 30-pin SIMM RAM KM44C256bp KM41C1000BJ 257J KM44C256BZ 1K x4 static ram 30-pin simm memory "16m x 8" | |
Contextual Info: CM O S RESETTABLE RAM W ITH C M O S I/O LEVELS 6 4 K 8K x 8-BIT IDT 71C65S IDT 71C65L FEATURES: DESCRIPTION: • Input and output directly CMOS-compatible The IDT71C65 is a 65,536-bit high-speed static RAM organized as 8 K x 8 . Inputs and outputs are com patible with industry stan |
OCR Scan |
71C65S 71C65L IDT71C65 536-bit 250mW. MIL-STD-883, 71C65 S4-180 | |
samsung 64k nmos static ramContextual Info: MEMORY ICs FUNCTION GUIDE 4. ORDERING INFORMATION 4.1 COMPONENT KM XX X C DEVICE TYPE •4 •42 •6 •23 •28 •93 •75 •65 DRAM VIDEO MEMORY SRAM MASK ROM STANDARD EEPROM Serial EEPROM FIFO PSEUDO ORGANIZATION • 1 : X1 •4 : X4 •8 : X8 •9 : X9 |
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100ns 120ns 200ns 100ns 120ns 150ns 200ns 75CXXA samsung 64k nmos static ram | |
Contextual Info: MEMORY ICs FUNCTION GUIDE 4. ORDERING INFORMATION 4.1 COM PONENT KM XX X C XXXX X X X X - XX DEVICE TYPE SPEED •4 : •42: •6 : •23: •28: •93: •75: •65: •6: 60ns •7: 70ns •8: 80ns •10: 100ns •12: 120ns •20: 200ns DRAM VIDEO MEMORY |
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100ns 120ns 200ns 100ns 120ns 150ns 200ns 75CXXA | |
DS1248VContextual Info: APPLICATION NO TE 52 PALLAS s e m ic o n d u c to r Application Note 52 Using the Dallas Phantom Real Time Clocks DESCRIPTION DS1216: The Dallas Phantom Real Time Clocks are a family of devices that offer the combination of a transparent CMOS timekeeper and a nonvolatile static RAM meet |
OCR Scan |
64-bit DS1248V | |
interfacing of ROM with 8051
Abstract: microcontroller 8051 7 segment alarm clock
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64-bit interfacing of ROM with 8051 microcontroller 8051 7 segment alarm clock | |
Water level indicator using 8051
Abstract: Water Level Indicator 8051 DS1216 equivalent DS1216B equivalent ds1243 DS1216 DS1216B DS1216C DS1216D DS1243 DS1244
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Contextual Info: CM OS STATIC RAMS 256K 64K x 4-BIT ' , S ep a ra te Data Inputs an d O u tp u ts pr e lim in a r y IDT71281S/L IDT71282S L FEATURES: DESCRIPTION: • • • • The IDT71281/IDT71282 are 262,144-bit high-speed static RAMs organized as 64K x 4. They are fabricated using IDT’s highperformance, high-reliability technology—CEMOS. This state-ofthe-art technology, combined with innovative circuit design |
OCR Scan |
IDT71281S/L IDT71282S IDT71281/IDT71282 144-bit 350mW. IDT71281 IDT71282 IL-STD-883, | |
bubble memory
Abstract: Non-Volatile Random Access Memory nvrams magnetic bubble memories
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OCR Scan |
AR-468 16-bit bubble memory Non-Volatile Random Access Memory nvrams magnetic bubble memories | |
DS1216 equivalent
Abstract: DS124X Water Level Indicator 8051 ds1216 Water level indicator using 8051 Daiwa Associate Holdings DS1215 DS1215 equivalent DS1216C DS1216D
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DS1216: DS1216 equivalent DS124X Water Level Indicator 8051 ds1216 Water level indicator using 8051 Daiwa Associate Holdings DS1215 DS1215 equivalent DS1216C DS1216D |