BDT60AF Search Results

BDT60AF Datasheets (4)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
BDT60AF		Philips Semiconductors	Silicon Darlington Power Transistor		Original	PDF
BDT60AF		Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)		Short Form	PDF
BDT60AF		Unknown	Shortform Data and Cross References (Misc Datasheets)		Short Form	PDF
BDT60AF		Philips Semiconductors	SILICON DARLINGTON POWER TRANSISTORS		Scan	PDF

BDT60AF Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
BDT60AF Abstract: BDT60BF BDT60CF BDT60F Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistors DESCRIPTION •DC Current Gain -hFE = 750 Min @ IC= -1.5A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = -60V(Min)- BDT60F; -80V(Min)- BDT60AF -100V(Min)- BDT60BF; -120V(Min)- BDT60CF	Original	PDF	BDT60F; BDT60AF -100V BDT60BF; -120V BDT60CF BDT61F/61AF/61BF/61CF BDT60F BDT60BF BDT60AF BDT60BF BDT60CF BDT60F
Untitled Abstract: No abstract text available Text: BDT60F; BDT60AF BDT60BF; BDT60CF _z PHILIPS INTERNATIONAL SbE D • 7110flSb 0043212 77fl ■ P H I N SILICON DARLINGTON POWER TRANSISTORS T~3 PNP silicon power transistors in a monolithic Darlington circuit and housed in a SOT186 envelope with an electrically insulated mounting base.	OCR Scan	PDF	BDT60F; BDT60AF BDT60BF; BDT60CF 7110flSb OT186 BDT61F, BDT61AF, BDT61BF BDT61CF.
BF 331 TRANSISTORS Abstract: bdt60bf Text: BDT60F; BDT60AF BDT60BF; BDT60CF SILICON DARLINGTON POWER TRANSISTORS PNP silicon power transistors in a monolithic Darlington circuit and housed in a SOT 186 envelope with an electrically insulated mounting base. They are recommended for applications such as audio output stages and general purpose amplifiers.	OCR Scan	PDF	BDT60F; BDT60AF BDT60BF; BDT60CF BDT61F, BDT61AF, BDT61BF BDT61CF. BDT60F BF 331 TRANSISTORS bdt60bf
60AF Abstract: BDT60AF BDT60BF BDT60F BDT61AF BDT61BF BDT61CF BDT61F Text: BDT60F; BDT60AF J ^BDT60BF; BDT60CF SILICON DARLINGTON POWER TRANSISTORS PNP silicon power transistors in a monolithic Darlington circuit and housed in a SOT186 envelope with an electrically insulated mounting base. They are recommended for applications such as audio output stages and general purpose amplifiers.	OCR Scan	PDF	BDT60F; BDT60AF BDT60BF; BDT60CM OT186 BDT61F, BDT61AF, BDT61BF BDT61CF. BDT60F 60AF BDT60AF BDT60BF BDT61AF BDT61CF BDT61F
BDT60AF Abstract: BDT60BF BDT60CF BDT60F BDT61AF BDT61BF BDT61CF BDT61F 0043E Text: BDT60F; BDT60AF BDT60BF; BDT60CF PHILIPS INT ER NA TI ON AL SbE m D 7110 äEb 0043212 SILICON DARLINGTON POWER TRANSISTORS 77 fl M P H I N T~3 J - J / PNP silicon power transistors in a monolithic Darlington circuit and housed in a SOT186 envelope with an electricaliy insulated mounting base.	OCR Scan	PDF	BDT60F; BDT60AF BDT60BF; BDT60CF 0043E12 OT186 BDT61F, BDT61AF, BDT61BF BDT61CF. BDT60AF BDT60BF BDT60CF BDT60F BDT61AF BDT61CF BDT61F 0043E
BDT61F Abstract: 61AF BDT61BF BDT60AF BDT60BF BDT60CF BDT60F Text: BDT61F; 61AF BDT61BF; 61CF SILICON DARLINGTON POWER TRANSISTORS NPN silicon power transistors in a monolithic Darlington circuit and housed in a SOT186 envelope w ith an electrically insulated mounting base. They are recommended fo r applications such as audio output stages and general purpose amplifiers.	OCR Scan	PDF	BDT61F; BDT61BF; OT186 BDT60F, BDT60AF, BDT60BF BDT60CF. BDT61F GD34b 61AF BDT61BF BDT60AF BDT60CF BDT60F
BPW22A Abstract: cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8 Text: Contents Page Page New product index Combined index and status codes viii x Mullard approved components BS9000, CECC, and D3007 lists CV list Integrated circuits Section index xliii 1 5 Standard functions LOGIC FAMILIES CMOS HE4000B family specifications CMOS HE4000B family survey	OCR Scan	PDF	BS9000, D3007 HE4000B 80RIBUTION BS9000 BPW22A cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8
transistor f6 13003 Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350 Text: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.	OCR Scan	PDF	SC08b transistor f6 13003 equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
61-BF Abstract: No abstract text available Text: BDT61F; 61AF BDT61BF; 61CF ’H I L I P S I N T E R N A T I O N A L 5fc,E D .J. 7110fl5b 0 0 4 3 2 3 D • 7^3 ■ P H I N SILICON DARLINGTON POWER TRANSISTORS NPN silicon power transistors in a monolithic Darlington circuit and housed in a SOT186 envelope	OCR Scan	PDF	7110fl5b BDT61F; BDT61BF; OT186 BDT60F, BDT60AF, BDT60BF BDT60CF. BDT61F 61-BF
BGY41 Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc Text: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.	OCR Scan	PDF	LCD01 BGY41 BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
FET BFW10 Abstract: KP101A FET BFW11 BDX38 KPZ20G CQY58A BFW10 FET RPW100 B0943 OF FET BFW11 Text: INDEX _ INDEX OF TYPE NUM BERS The inclusion of a type number in this publication does not necessarily imply its availability. Type no. book section Type no. book section Type no. book section BA220 BA221 BA223 BA281 BA314 SCOI SCOI SCOI SCOI	OCR Scan	PDF	BA220 BA221 BA223 BA281 BA314 BA315 BA316 BA317 BA318 BA423 FET BFW10 KP101A FET BFW11 BDX38 KPZ20G CQY58A BFW10 FET RPW100 B0943 OF FET BFW11