776 L DIODE Search Results

Contextual Info: SKKT 42, SKKT 42B, SKKH 42 SEMIPACK 1 Thyristor / Diode Modules /0.1 /001 /%01 / ;66 7"66 7#66 7466 / 866 7$66 7566 7!66 .<<+ 5$=68 .<<+ 5$=7$ .<<+ 5$=75 .<<+ 5$=7! 7;66 7866 .<<+ 5$=78 SKKT 42B SKKH 42 Features               

thyristor

Contextual Info: SKKT 42, SKKT 42B, SKKH 42 THYRISTOR SEMIPACK 1 Thyristor / Diode Modules /0.1 /001 /%01 / ;66 7"66 7#66 7466 / 866 7$66 7566 7!66 .<<+ 5$=68 .<<+ 5$=7$ .<<+ 5$=75 .<<+ 5$=7! 7;66 7866 .<<+ 5$=78 SKKT 42B SKKH 42 Features         

semikron skkt 41

Contextual Info: SKKT 41, SKKH 41 THYRISTOR BRIDGE,SCR,BRIDGE SEMIPACK 1 Thyristor / Diode Modules SKKT 41 /0.1 /001 /%01 2+01. 3 4# *  ,       / #66 466 =66 7"66 7#66 7466 / 566 !66 866 7$66 7566 7!66 .;+ 57<6! .;+ 57<68 .;+ 57<7$ .;+ 57<75

semikron skkt 42

Abstract: semipack skkt skkh SKKT 42 SKKT
Contextual Info: SKKT 42, SKKT 42B, SKKH 42 SEMIPACK 1 Thyristor / Diode Modules /0.1 /001 /%01 / ;66 7"66 7#66 7466 / 866 7$66 7566 7!66 .<<+ 5$=68 .<<+ 5$=7$ .<<+ 5$=75 .<<+ 5$=7! 7;66 7866 .<<+ 5$=78 SKKT 42B SKKH 42 Features               

semikron thyristor

Contextual Info: SKKT 42, SKKT 42B, SKKH 42 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter SEMIPACK 1 Thyristor / Diode Modules /0.1 /001 /%01 / ;66 7"66 7#66 7466 / 866 7$66 7566 7!66 .<<+ 5$=68

uln2803 to drive 7 segment display

Abstract: working of 5 pen pc technology 4 digit 7 segment LED display AM26L532 AM26L53 ULN2803 MC14499 4-DIGIT 7-SEGMENT LED DISPLAY MC75107 MC14547B
Contextual Info: Microprocessor Bus Interface Motorola offers a spectrum of line drivers and receivers which provide Interlaces to many Industry standard specifications. Many of the devices add key operational features, such as hysteresis, short circuit protection, clamp diode protection, or special control functions,

LT025MD

Abstract: sharp laser diode lt025md ecg 778 ST3040 LT025M sharp laser diode 780 nm
Contextual Info: Laser Diodes LT025MD LT025MD • High Power Laser Diode 780nm-40nnW Features ■ Outline Dimensions (U nit : m m ) (1) H igh po w er (M axim um optical po w er o u tp u t: 40mW) (2) W a v e le n g th : 780nm (3) T ra n sv e rse m o d e ■ Applications (1) O ptical disc eq u ip m en t

Contextual Info: SKKT 42, SKKT 42B, SKKH 42 THYRISTOR SEMIPACK 1 Thyristor / Diode Modules /0.1 /001 /%01 / ;66 7"66 7#66 7466 / 866 7$66 7566 7!66 .<<+ 5$=68 .<<+ 5$=7$ .<<+ 5$=75 .<<+ 5$=7! 7;66 7866 .<<+ 5$=78 SKKT 42B SKKH 42 Features         

LT024MD

Abstract: lt024* sharp LT024PD
Contextual Info: Laser Diodes LT024MD LT024MD • High Power Laser Diode 780nm-30mW Features ■ (1 ) H ig h p o w e r (M a x im u m o p tica l p o w e r o u t p u t : 3 0 m W ) (2 ) W a v e le n g th : 7 8 0 n m (3 ) T ra n sv e rse m od e ■ Applications (1 ) O p tica l d is c e q u ip m e n t

MC34142

Abstract: UCN5816 7170 MOSFET Interface Circuit - Relay and Lamp - Driver 8 output decoder relay driver
Contextual Info: MOTOROLA MC34142 SEMICONDUCTOR! TECHNICAL DATA Advance Information High Performance Decoder/ Sink Driver The MC34142 is a high performance 4 to 16 multiplexed driver. This integrated circuit features a 4 to 16 decoder, 16 open drain N-channel MOS output devices with clamp diodes. The outputs are controlled by 4 address

42N15

Abstract: 079A 42N20
Contextual Info: I X Y S CORP 10E D I D00D3b4 3 I /_ V -3 Ÿ -/S - □IXYS MegaMOS FETs IXTH42N20, 15 IXTM42N20, 15 MAXIMUM RATINGS Parameter Sym. Drain-Source Voltage 1 Vd Drain-Gate Voltage (Rq s = 1.0MÎ1) (1) Vqqr Gate-Source Voltage Continuous

21N60

Abstract: a 1712 mosfet s300h 21N55 247 AA
Contextual Info: I X Y S C0RP IDE ° 1 MbflbSatj 00D0342 □ IX Y S I IXTH21N60, 55 IXTM21N60, 55 Parameter Sym. IXTH21N55 IXTM21N55 IXTH21N60 IXTM21N60 Unit Drain-Source Voltage 1 Vdss 550 600 Vdc Drain-Gate Voltage (Rqs = 1.0Mfl) (1) Vdgr 550 600 Vdc Gate-Source Voltage Continuous

TL 1074 CT

Abstract: megamos 46 08 09 6 a 1712 mosfet IXTH20N55 25N50 f g megamos
Contextual Info: I X Y S IDE C0RP » 1 4L,âfc,52b 0000344 fl □ IX Y S M e ga M O S’“ FETs IXTH20N60, 55 IXTM20N60, 55 MAXIMUM RATINGS Sym. IXTH20N55 IXTM20N55 IXTH20N60 IXTM20N60 Drain-Source Voltage 1 Vd s s 550 600 Drain-Gate Voltage (R q s = 1-OMfl) (1) Vd g r

IXTH24N45

Contextual Info: I X Y S IDE CORP 0D003S5 » I □ IX Y S IXTH24N50, 45 IXTM24N50, 45 Sym. IXTH24N45 IXTM24N45 IXTH24N50 IXTM24N50 Unit Drain-Source Voltage 1 Vd s s 450 500 Vdc Drain-Gate Voltage (Rq s = 1.0MÎÎ) (1) Vdg r 450 500 Vdc Gate-Source Voltage Continuous Gate-Source Voltage Transient

35N25

Abstract: ixtm35n30 35N30 800v mosfet megamos 46 08 09 6 IXTH35N25
Contextual Info: I X Y S CORP ID E D I 4t.fl b25L. ÜDDOBbO QDOGBtiO b 4t.flt.S5t b | DIXYS MegaMOS'“ FETs IXTH35N30, 25 IXTM35N30, 25 MAXIMUM RATINGS Parameter Sym. Drain-Source Voltage 1 Vdss Vdgr Drain-Gate Voltage (Rq s = 1-OMft) (1) Gate-Source Voltage Continuous

19P20

Abstract: IXTH19P20 Mosfet K 135 To3 ixtm19p20
Contextual Info: IDE D I X Y s CORP □ I Mbôt,E5b IX Y S OODOSba 7 | P-CHANNEL MOSFETS IXTH19P20, 15 IXTM19P20, 15 MAXIMUM RATINGS Parameter Sym. IXTH19P20 IXTM19P20 IXTH19P15 IXTM19P15 Drain-Source Voltage 1 Vdss 200 150 Vdc Drawv-Gate Voltage (Rqs = 1-OMft) (1) Vdgr

ixtm11p20

Abstract: IXTP11P20 11P20 ixtp11p15 mosfet 11P20
Contextual Info: IDE D I m^öbSSti 0 0 0 0 5 7 1 7 | I X Y S CORP _ r - 3 7 - A S □ IX Y S P-CHANNEL MOSFETS MAXIMUM RATINGS IXTP11P15 IXTM11P15 Parameter Sym. IXTP11P20 1XTM11P20 Drain-Source Voltage 1 VDss 200 150 VDGR 200 150 Drain-Gate Voltage (R q s = 1-OMfl) (1)

IXTH26N50

Abstract: IXTH26N45 ixtm26n50 TL 1074 CT
Contextual Info: I X Y S IDE CORP 1 ° Mbflb52b 000D350 3 I -' □ IX Y S MegaNIOS FETs IXTH26N50, 45 IXTM26N50, 45 MAXIMUM RATINGS Parameter Sym. IXTH26N45 IXTM26N45 IXTH26N50 IXTM26N50 Unit Drain-Source Voltage 1 Vdss 450 500 Vdc V dgr 450

a 1712 mosfet

Abstract: ixth67n10 ID 48 Megamos K 1120 megamos 46 08 09 6
Contextual Info: IDE D I X Y S CORP DIXYS MegaMOS FETs IXTH67N10, 08 IXTM67N10, 08 MAXIMUM RATINGS Sym. IXTH67N08 IXTM67N08 IXTH67N10 IXTM67N10 Unit Drain-Source Voltage 1 V d SS 80 100 Vdc Drain-Gate Voltage (RGs = 1.0MQ) (1) VDGR 80 100 Vdc Parameter Gate-Source Voltage Continuous

BSC 031 N 06 NS 3

Abstract: 21N50 ixth21n50 IXTM21N50
Contextual Info: I X □ I X Y S CORP IDE D | 4t.flL,22b 000Q3S4 T 7 - 3 Y S ? | - /S ' MegaMOS FETs IXTH21N50, 45 IXTM21N50, 45 R A T IN G S Parameter Drain-Source Voltage 1 1-OMfl) (1) Gate-Source Voltage Continuous IXTH21N50 IXTM21N50 Unit Voss 450 500 Vdc Vdgr 450

ID 48 Megamos

Abstract: 35N25 IXTM35N25 ixtm35n30
Contextual Info: I X Y S CORP IDE D I 4t . fl b25 L. ÜDDOBbO QDOGBtiO b | 4t.flt.S5t DIXYS MegaMOS'“ FETs IXTH35N30, 25 IXTM35N30, 25 MAXIMUM RATINGS Parameter Sym. Drain-Source Voltage 1 Vdss Vdgr Drain-Gate Voltage (Rq s = 1-OMft) (1) Gate-Source Voltage Continuous

AX 1668 F 24 pin

Abstract: AX 1668 F IXTH17P25 ixtm17p25
Contextual Info: I Î O E D 1 4bflhS2b GOODatiO 5 | X Y S CORP P-CHANNEL MOSFETS □ IX Y S IXTH17P25 IXTM17P25 ' MAXIMUM RATINGS Parameter Sym. IXTH17P25 IXTM17P25 * Unit Drain-Source Voltage 1 VDss 250 Vdc Drain-Gate Voltage (Rqs = 1.0MÎ1) (1) Vdgr 250 Vdc Vqs ± 20 Vcjc

75n08

Abstract: megamos 46 08 09 6 TL 1074 CT Mosfet K 135 To3 p 75n08 k 1120 P-Channel MOSFET 800v f g megamos
Contextual Info: I X Y S IDE CORP D I 4böbS?b D OOG a b b T □IXYS I 't f - l Ç MegaMOS FETs IXTH75N10, 08 IXTM75N10, 08 MAXIMUM RATINGS Sym. IXTH75N08 IXTM75N08 IXTH75N10 IXTM75N10 Unit Drain-Source Voltage 1 Vd s s 80 100 Vdc Drain-Gate Voltage (Rq s = 1-OMfl) (1)

15N60

Abstract: IXTM15N60
Contextual Info: I X Y S IDE CORP D I 4bflb22b D00034Ö /S' □IX Y S MegaMOS'" FETs IXTH15N60, 55 IXTM15N60, 55 M A X IM U M R ATIN G S Sym. IXTH15N55 IXTM15N55 IXTH15N60 IXTM15N60 U nit Drain-Source Voltage 1 Vdss 550 600 Vdc Drain-Gate Voltage (R q s = 1.0MÜ) (1) Vd g r