7C161 Search Results

7cl6

Abstract: D-2501 CY7C161A CY7C162 CY7C162A
Contextual Info: CYPRESS SEMICONDUCTOR 4bE » B SSfl'lbfe.S □ QQbMSb b q c y p 7C161A CY7C162A • - j/ "— = 16,384 x 4 Static RAV RAM Separate I/O SEMICONDUCTOR Features • Automatic power-down when dese­ lected • Transparent write 7C161A • CMOS for optimum speed/power

Contextual Info: mw CYPRESS Features • High speed — 20 ns tAA • CMOS Tor optim um speed/power • T ran sp aren t write 7C161A • Low active power — 550 mW • Low standby power — 220 mW • TTL-com patible inputs and outputs • Automatic power-down when dese­

ID14771

Abstract: C1626 A10C A12C CY7C161 CY7C162 V21 PACKAGE DIAGRAM
Contextual Info: 7C161 CY7C162 16K x 4 Static RAM with Separate I/O CYPRESS Features • High speed — 15-ns • Transparent write 7C161 • CMOS for optimum speed/power • Low active power — 633 mW • Low standby power — 220 mW • TTL compatible inputs and outputs

Contextual Info: 7C161A CY7C162A CYPRESS SEMICONDUCTOR Features • Automatic power-down when dese­ lected • T ransparent write 7C161A • CMOS for optim um speed/power • High speed - 15 ns t* • Low active power - 550 mW • Low standby power - 220 mW • TTL-compatible inputs and outputs

CY7C161

Abstract: CY7C162 CY7C162-25VC
Contextual Info: 7C161 CY7C162 16K x 4 Static RAM with Separate I/O CYPRESS Features • High speed — 15-ns • Transparent write 7C161 • CMOS for optimum speed/power • Low active power — 633 mW • Low standby power — 220 mW • TTL compatible inputs and outputs

Contextual Info: 7C161A CY7C162A CYPRESS SEMICONDUCTOR 16K x 4 Static RAM Separate I/O Features Functional Description • High speed The C Y 7C161A and C Y 7C162A are highperform ance C M O S static R A M s orga­ nizes as 16,384 by 4 bits w ith sep a ra te I/O . Easy m em ory expansion is provided by ac­

cy3341

Abstract: 64K X 4 CACHE SRAM CY7C190 pasic380 cy7c189 palce22v10 programming guide palce16v8 programming algorithm STATIC RAM 6264 vhdl code for 8-bit parity checker 64x18 synchronous sram
Contextual Info: Product Selector Guide Static RAMs Organization/Density Density X1 X4 X4 SIO 7C147 2147 7C123 7C148 7C149 7C150 7C189 7C190 2148 2149 7C122 9122 93422 7C167A 7C168A 7C169A 7C170A 7C171A 7C172A 7C128A 7C187 7C164 7C166 7C161 7C162 7C185 6264 7C182 7C197 7C194

Contextual Info: 7C161A CY7C162A SEMICONDUCTOR Features • Automatic power-down when dese­ lected • Transparent write 7C161A 16,384 x 4 Static R/W RAM Separate I/O • Capable o f withstanding greater than 2001V electrostatic discharge. is written into the memory location speci­

CY7C161A-15DMB

Contextual Info: 7C161A CY7C162A 16K x 4 Static RAM with Separate I/O Functional D escription Features • High speed — 20 nstAA • CMOS for optimum speed/power • Transparent write 7C161A • Low active power — 550 mW • Low standby power — 220 mW • TTL-compatible inputs and outputs

ic tm 1628

Contextual Info: 7C161 CY7C162 CYPRESS SEMICONDUCTOR Features • Automatic power-down when deselected • T ransparent write 7C161 • CMOS for optim um speed/power • High speed - IS ns t*A • Low active power - 633 mW • Low standby power - 220 mW • TTL com patible inputs and outputs

CY7C161A

Abstract: CY7C162A
Contextual Info: CYPRESS SEM IC ONDUCTOR bSE D • ESflTbbS 000^034 40^ « C Y P 7C161A CY7C162A P Y p p trc c ; SEMICONDUCTOR Features Functional Description • High speed — 20 ns tAA • CMOS for optimum speed/power • Transparent write 7C161A • Low active power

Contextual Info: 7C161 CY7C162 CYPRESS SEMICONDUCTOR Features • Automatic power-down when deselected • Transparent write 7C161 • CMOS for optimum speed/power • High speed — 15 ns U a • Low active power — 633 mW • Low standby power — 220 mW • TTL compatible inputs and outputs

Contextual Info: 7C161A CY7C162A " ’V P P T T C C SEMICONDUCTOR Features • Automatic power-down when dese­ lected • T ransparent write (7C161A • CMOS for optimum speed/power • High speed - 15 ns Ua • Low active power - 550 mW • Low standby power - 220 mW

tm l54

Abstract: CY7C161A CY7C162A 0CE12
Contextual Info: 7C161A CY7C162A 16K x 4 Static RAM with Separate I/O CYPRESS Functional Description Features • High speed — 20 ns t^ A • CMOS for optimum speed/power • Transparent write 7C161A • Low active power — 55« mW • Low standby power — 22« mW

Contextual Info: 7C161 _ CY7C162 16K x 4 Static RAM Separate I/O into the memory location specified on the address pins A q through A 1 3 . Features Functional Description • High speed — 15-ns • Transparent write (7C161) • CMOS for optimum speed/power

CY7C161

Abstract: CY7C162 C1624
Contextual Info: 7C161 CY7C162 16K x 4 Static RAM with Separate I/O Features Easy memory expansion is provided by active LOW chip enables CE1, CE2 and three-state drivers. They have an automatic power-down feature, reducing the power consumption by 65% when deselected.

C1623

Abstract: C1624 c162 c1627 C1622 CY7C161 CY7C162 C1628 C1625
Contextual Info: 1CY 7C16 2 7C161 CY7C162 16K x 4 Static RAM with Separate I/O Features Easy memory expansion is provided by active LOW chip enables CE1, CE2 and three-state drivers. They have an automatic power-down feature, reducing the power consumption by 65% when deselected.

Contextual Info: 7C161 CY7C162 16Kx 4 Static RAM with Separate I/O Features into the memory location specified on the address pins Ao through A13 . Reading the device is accomplished by tak­ ing the chip enables (CEi, CE2) LOW while write enable (WE) remains HIGH. Under these conditions the contents of the

cmos SRAM 35ns 8k X 8 dip

Abstract: 7C166 CY7C161 CY7C162 CY7C164 CY7C166 CY7C185 CY7C186 CY7C187 7C164
Contextual Info: Qualification Report January 1992 QTP 91094 64K SRAM FAMILY MARKETIN G DEVICE PART NBR DESCRIPTION 7C161 16K x 4 SIO CY7C162 16K x 4 (SIO) CY7C164 16K x 4 CY7C166 (OE) CY7C185 8K x 8 CY7C186 8K x 8 (.6 DIP) CY7C187 64K x 1 Version 1.2 PRODUCT DESCRIPTION (for qualification)

CY7C161A

Abstract: CY7C162A A5624 cy7c161a-35dmb
Contextual Info: 7C161A CY7C162A 16KĂxĂ4 Static RAM with Separate I/O into the memory location specified on the Features Functional Description D The 7C161A and CY7C162A are highĆ performance CMOS static RAMs orgaĆ nizes as 16,384 by 4 bits with separate I/O. Easy memory expansion is provided by acĆ

81c78

Abstract: 7C291 5962-8515505RX 27PC256-12 PAL164A 8464C 5C6408 72018 39C10B MACH110 cross reference
Contextual Info: Product Line Cross Reference CYPRESS 2147-35C 2147-45C 2147-45C 2147-45M+ 2147-55C 2147-55M 2148-35C 2148-35C 2148-35M 2148-45C 2148-45C 2148-45M 2148-45M+ 2148-55C 2148-55C 2148-55M 2149-35C 2149-35C 2149-35M 2149-45C 2149-45M 2149-45M 2149-55C 2149-55C 2149-55M

C1623

Abstract: C1624 C1627 C1622 c1628 C162 CY7C161 CY7C162 7C162 C1625
Contextual Info: 7C161 CY7C162 16KĂxĂ4 Static RAM with Separate I/O Features Functional Description D The 7C161 and CY7C162 are highĆperĆ formance CMOS static RAMs organized as 16,384 by 4 bits with separate I/O. Easy memory expansion is provided by active LOW chip enables CE1, CE2 and threeĆ

Contextual Info: 7C161A CY7C162A CYPRESS SEMICONDUCTOR Features Functional Description • High speed The 7C161A and CY7C162A are highperformance CMOS static RAMs orga­ nizes as 16,384 by 4 bits with separate I/O. Easy memory expansion is provided by ac­ tive LOW chip enables C E i, CE2 and

MSM 6290

Abstract: msm 5562 27c256 intel 62c512 AP 2068 27C512 microchip 62256 57C256 27C512 SGS-THOMSON 27C512-150
Contextual Info: Product Line Cross Reference CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS 2147-35C 7C147-35C 27S03M 54S189M 7C170A-45M 7C170A-35M 2147-45C 2147-35C 27S07AC 7C190-25C 7C171A-35C 7C171A-25C 2147-45C 7C147-45C 27S07AM 7C190-25M 7C171A-45M 7C171A-35M+ 2147-45M+